• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.31-35
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• 2014

The thickness dependent electrical, structural, and optical properties of ZnO films grown by atomic layer deposition (ALD) at various growth temperatures were investigated. In order to deposit ZnO films, diethylzinc and deionized water were used as metal precursor and reactant, respectively. ALD process window was found at the growth temperature range from $150^{\circ}C$ to $250^{\circ}C$ with a growth rate of about $1.7{\AA}/cycle$. The electrical properties were studied by using van der Pauw method with Hall effect measurement. The structural and optical properties of ZnO films were analyzed by using X-ray diffraction, field emission scanning electron microscopy, and UV-visible spectrometry as a function of thickness values of ZnO films, which were selected by the lowest electrical resistivity. Finally, the figure of merit of ZnO films could be estimated as a function of the film thickness. As a result, this investigation of thickness dependent electrical, structural, and optical properties of ZnO films can provide proper information when applying to optoelectronic devices, such as organic light-emitting diodes and solar cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.61-69
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• 2014

In this paper, we have researched semiconductor optical filters to solve the problem of the high failure rate that are recognize bad of financial account, jam of financial account and the ATM service interruption due to failure of accurate location information among the operation of the ATM (automatic teller machine) systems. A semiconductor optical filters that have high resolution and less diffuse, high transmittance are able to detect the information of financial account surface accurately. Therefore, it is a stable filter that is able to minimize the incidence of disability. In this paper, we drew the determinants by element for implement an excellent semiconductor optical filters. Based on this, we had to be able to implement the semiconductor optical filter that is able to be mounted on the actual ATM system through future studies.

• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.1-5
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• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Thin layer of encapsulation film is required to preserve transparency yet protecting materials in it. Atomic layer deposition(ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. $Al_2O_3$ or $Al_2O_3/TiO_2/Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films. $Al_2O_3/TiO_2/Al_2O_3$ multilayer and 1.5 dyad layer of $Al_2O_3/polymer/Al_2O_3$ deposited by ALD was measured to have water vapor transmittance rate(WVTR) well below the detection limit($5.0{\times}10^{-5}g/m^2day$) of MOCON Aquatran 2 equipment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.159-159
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• 2008

Indium-tin oxides (ITO) films have been widely used as transparent electrodes for optoelectronic devices such as organic light emitting diodes (OLEDs), photovoltaics, touch screen devices, and flat-paneldisplay. In particular, to improve hole injection efficiency in OLEDs, transparent electrodes should have high work-function besides their transparency and low resistivity. Nevertheless, few studies have been made on engineering the work function of ITO for use as an efficient anode. In this study, the effects of a wide range of Nb or Zn doping rate on the changes in work functions of ITO anode were investigated. The Nb or Zn doped ITO films were fabricated on glass substrates using combinatorial sputtering system which yields a linear composition spread of Nb or Zn concentration in ITO films in a controlled manner by co-sputtering two targets of ITO and Nb2O5 or ITO and ZnO. We have also examined the resistivity, transmittance, and other structural properties of the Nb or Zn-doped ITO films. Furthermore, OLEDs employing Nb or Zn-doped ITO anodes were fabricated and the device performances were investigated concerned with the work function changes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.425-425
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• 2008

The transparent conducting oxides(TCOs) are widely used as electrodes for most flat panel display devices(FPDs), electrodes in solar cells and organic light emitting diodes(OLED). Among them, indium oxide materials are mostly used due to its high electrical conductivity and a high transmittance in the visible spectrum. The present study reports on a study of the electrical and optical properties of IGZO thin films prepared on glass and PET substrates by the combinational magnetron sputtering. We use the targets of IZO and Ga2O3 for the deposition process. In some case the deposition process is coupled with the End-Hall ion-beam treatment onto the substrates before the sputtering. In addition we control the deposition rate to optimize the film quality and to minimize the surface roughness. Then we investigate the effects of the Ar gas pressure and RF power during the sputtering process upon the electrical, optical and morphological properties of thin films. The properties of prepared IGZO thin films have been analyzed by using the XRD, AFM, a-step, 4-point probe, and UV spectrophotometer.

• Proceedings of the Korean Society of Crop Science Conference
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• 2022.10a
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• pp.50-50
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• 2022

Recently, the use of mulching film has increased in soybean cultivation. Polyethylene (PE) films and biodegradable films (BF) have the advantages of improving soil moisture retention, geothermal maintenance, and CO2 maintenance as well providing weed control. Furthermore, BFs are a material that can compensate for the shortcomings of PE because it has the ability to decompose naturally by soil microorganisms, sunlight, and geothermal heat. Many researches have been carrying out studies regarding the development of BFs for these very reasons. This study was conducted better understand which films are optimal for soybean cultivation after evaluations of soybean growth and film characteristics of various BFs. BFs Farmsbio (Farm Hannong), Heulgro Film (Sejin Bio), Vonto Film (Eco-Hansung), two unnamed biodegradable films (Seojin Bio and Taesung), and a PE film were used in this study. For the control plots, no mulching was used. Experimental fields were fertilized according to conventional cultivation methods, tilled, and then covered with either BFs or PE films. After 1 week, soybean (cv. Daechan) seeds were seeded. Germination rate and plant height were measured at weekly intervals after seeding. In addition, pH, EC, and decomposition and light transmittance levels of films were measured during the experimental period. Daily average temperatures and relative humidity in soils was measured during the experimental period. There was no significant difference in germination rates and plant height in both crops grown with BFs and PE films, but crops grown in the control plot had significantly lower germination rates and growth. Soil pH was not significantly different regardless of treatments (BF, PE, and non-mulching) at 14, 28, and 42 days after seeding. In general, the EC contents in the control plots was lower than in crops grown using BFs and PE films. With the exception of some BFs, light transmittance and decomposition levels of films did not, in general, increase up to 70 days after soybean seeding. Since this study is ongoing, we are continually investigating these parameters. The average daily moisture in soil was higher in crops grown with BFs and PE films than in the control plot. However, the daily average soil temperature was not consistent regardless of treatments. Therefore, the BFs used in this study can be used without negative impacts on soybean growth.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1028-1032
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• 2009

In this study, the influences of silicon-based gas barrier films fabricated by using a facing target sputtering(FTS) system on the gas permeability for flexible displays have been investigated. Under these optimum conditions on the $SiO_x$ film with oxygen concentration($O_2/Ar+O_2$) of 3.3% and the $SiO_xN_y$ film with nitrogen concentration($N_2/Ar+O_2+N_2$) of 30% deposited by the FTS system, it was found that the films were grown about 4 times higher deposition rate than that of the conventional sputtering system and showed high transmittance about 85% in the visible light range. Particularly, the polyethylene naphthalate(PEN) substrates with the $SiO_x$ and/or $SiO_xN_y$ films showed the enhanced properties of decreased water vapor transmission rate (WVTR) over $10^{-1}\;g/m^2{\cdot}day$ compared with the PEN substrate without any gas barrier films, which was due to high packing density in the Si-based films with high plasma density by FTS process and/or the denser chemical structure of Si-N bond in the $SiO_xN_y$ film.

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.39-44
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• 2011

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under oxygen ambient gases (Ar, $Ar+O_2$) at room temperature. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $O_2$ under $Ar+O_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/a-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.148-154
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• 2010

We have fabricated $SiO_2$ oxidation thin films by TCP-CVD (transformer coupled plasma chemical vapor deposition) method for passivation layer of OLED (organic light emitting diode). The purpose of this paper is to control and estimate the deposition rate and refracive index characteristics with process parameters. They are power, gas condition, distance of source and substrate and process temperature. The results show that transmittance of thin films is over 90%, rapid deposition rate and stable reflective index from 1.4 to 1.5 at controled process conditions. They are $SiH_4$ : $O_2$ = 30 : 60 [sccm] gas condition, 70 [mm] distance of source and substrate, no-biased substrate and under 80 [$^{\circ}C$] process temperature.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.7
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• pp.58-62
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• 2017

In this study, the design conditions for the Korean-style glass greenhouse structure has been reduced to achieve the most efficient use of natural light. The AGI program was simulated for the optimal conditions of daylight in a glass greenhouse. From the results of daylight simulation, the axis position of the glass greenhouse's roof was not an important factor in the daylight effects regarding illumination and uniformity. In summer, there were long periods of daylight and high illumination levels. The illumination value of daylighting increased with increasing glass transparency value, and the illumination value was greatest at 14:00 hours. At this time, the rate of light variation according to the glass transparency was 89 [lux/%]. In addition, the optimal design conditions for the glass greenhouse were established, which were a $30[^{\circ}]$ or $150[^{\circ}]$ installation angle and higher transmittance of glass.