• Journal of Information Display
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• v.8 no.3
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• pp.5-10
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• 2007

Twin target sputtering (TTS) system with a configuration of vertically parallel facing Al targets and a substrate holder perpendicular to the Al target plane has been designed to realize a direct Al cathode sputtering on organic light emitting diodes (OLEDs). The TTS system has a linear twin target gun with ladder type magnet array for effective and uniform confinement of high density plasma. It is shown that OLEDs with Al cathode deposited by the TTS show a relatvely lower leakage current density $({\sim}1{\times}10^{-5}mA/cm^2)$ at reverse bias of -6V, compared to that ($1{\times}10^{-2}{\sim}10^{-3}$ $mA/cm^2$ at -6V) of OLEDs with Al cathodes grown by conventional DC magnetron sputtering. In addition, it was found that Al cathode films prepared by TTS were amorphous structure with nanocrystallines due to low substrate temperature. This demonstrates that there is no plasma damage caused by the bombardment of energetic particles. This indicates that the TTS system with ladder type magnet array could be useful plasma damage free deposition technique for direct Al cathode sputtering on OLEDs or flexible OLEDs.

• Proceedings of the KACD Conference
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• 2001.11a
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• pp.578.1-578
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• 2001

The aim of this study was to evaluate the efficiency of the recently introduced light curing units to polymerize a light curing resin composite. Four light curing units XL 3000, Optilux 500 for halogen light source, Apollo 95E for plasma arc and Easy cure for LED (blue-light Emitting Diode) were evaluated. Radiometer was used for measure the light intensity.(omitted)

• Korean Journal of Medicinal Crop Science
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• v.25 no.1
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• pp.37-44
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• 2017

Background: The light emitting plasma (LEP) has recently attracted attention as a novel artificial light source for plant growth and functional component enhancement. We investigated the effects of LEP on whitening and antioxidant activities of the plant parts of perilla. Methods and Results: Previously germianted seeds of perilla were cultivated under different light conditions (fluoresce lamp, LED red, blue, white, green, and LEP) in a culture room for 2 months. Parts of perilla were harvested and extracted in 70% EtOH. The extracts were used to detect total phenolic contents, total flavonoid contents, 2,2-diphenyl-1-picrylhydrazyl (DPPH), 2,2'-azino-bis-3-ethylbenzothiazoline-6-sulfonic acid (ABTS), reducing power and tyrosinase inhibition activity as indicators of biological activity. Biological activity was highest in seedlings grown under LEP. The total phenolic content was highest in the stems and the total flavonoid content was highest in the roots of perilla exposed to LEP. The DPPH and ABTS radical activity in all the parts of perilla exposed to LEP were higher by approximately three-fold compared to that in the control (fluoresce lamp). The reducing power values of perilla significantly increased after treatment with LEP. In addition, all the extract of perilla plants exposed to LEP promoted the tyrosinase inhibitory activity. These results suggest that LEP can be an important artificial light source for enhancement of biological activity. Conclusions: LEP could promote whitening and antioxidant activity of perilla.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2005.11a
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• pp.173-174
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• 2005

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.910-915
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• 2012

We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. The best blue emitting OLED and red emitting OLED characteristics were obtained at a concentration of 12 vol.% FIrpic and 1 vol.% $Bt_2Ir$(acac) in UGH3, respectively. And the optimum thickness of the total emitting layer was 25 nm. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with red/blue/red, blue/red, red/blue and co-doping emitting layer structures were fabricated using a host-dopant system. In case of white PHOLEDs with co-doping structure, the best efficiency was obtained at a structure UGH3: 12 vol. % FIrpic: 1 vol.% $Bt_2Ir$(acac) (25 nm). The maximum brightness, current efficiency, power efficiency, external quantum efficiency, and CIE (x, y) coordinate were 13,430 $cd/m^2$, 40.5 cd/A, 25.3 lm/W, 17 % and (0.49, 0.47) at 1,000 $cd/m^2$, respectively.

• Journal of the korean academy of Pediatric Dentistry
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• v.30 no.2
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• pp.229-237
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• 2003

The purpose of this study was to compare the effect of exposure time on the polymerization of surface and 2 mm below the surface of light-cured restorative materials cured with three different light sources; conventional halogen light curing unit(XL 3000, 3M, U.S.A.), plasma arc light curing unit(Flipo, LOKKI, France) and light emitting diode(LED) light curing unit(Elipar Free light, 3M, U.S.A.) and compare the uniformity of polymerization from the center to the periphery of resin surfaces according to polymerization diameter cure with three different light sources. From the experiment, the following results were obtained. 1. In Z-100, Plasma arc light exposure time of 6 to 9 seconds and LED light exposure time of 40 to 60 seconds produced microhardness values similar to those produced with 40 second exposure to a conventional halogen light(p>0.05). 2. In Tetric Flow, Plasma arc light exposure time of 9 seconds and LED light exposure time of 40 to 60 seconds produced microhardness values similar to those produced with 40 second exposure to a conventional halogen light(p>0.05). 3. In Dyract AP, Plasma arc light exposure time of 6 to 9 seconds and LED light exposure time of 20 to 40 seconds produced microhardness values similar to those produced with 40second exposure to a conventional halogen light(p>0.05). 4. In Fuji II LC, Plasma arc light exposure time of 9 seconds and LED light exposure time of 20 to 60 seconds produced microhardness values similar to those produced with 40second exposure to a conventional halogen light(p>0.05). 5. Except Fuji II LC, microhardness was decreased from the center to the periphery in all light sources(p<0.05).

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1281-1282
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• 2008

Low cost TCO(Transparent Conductive oxide) thin films were prepared by 3" DC/RF magnetron sputtering systems. For the AZO preparation processes a 99.99% AZO target (Zn: 98 wt.%, $Al_2O_3$: 2 wt.%) was used. In order to verify feasibility of the AZO thin films to organic light emitting device (OLED) application, test organic light emitting device was fabricated based on AZO as TCO, TPD as hole transporting layer (HTL), Alq3 as both emitting layer (EML) and electron transporting layer (ETL), and aluminium as cathode, where the both ITO and AZO surfaces were treated using $O_2$ RF plasma. The I-V characteristics of the AZO/TPD/Alq3/Al OLEDs were evaluated. As the results, the performance of the OLEDs with AZO as transparent conducting anode could be useable.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.93-97
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• 2006

Polymer light emitting diodes (PLEDs) are expected to be commercialized as next generation displays by advantages of the fast response time, low driving voltage and easy manufacturing process for large sized flexible display. Generally, the electrical and optical properties of PLEDs are affected by the surface conditions of transparent electrode. The PLED devices with ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structures were prepared by using the spin coating method. For this, PEDOT:PSS(poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)) Al 4083 and PVK(N-vinylcabozole) were used as hole injection and transport layers. The PFO-poss(poly(9,9-dioctylfluorene)) was used as the emitting layer. The dependence of $O_2$ plasma treatment of ITO electrode on the electrical and optical properties of PLEDs were investigated. The sheet resistances increased slightly with an improved surface roughness of ITO electrode as the RF power increased during $O_2$ plasma treatment. The PLED devices prepared on the ITO/Glass substrates, which were plasma-treated at 40 watt in RF power for 30 seconds under 40 mtorr $O_2$ pressure, showed the maximum external emission efficiency of 0.86 lm/W and the maximum luminance of $250\;cd/m^2$, respectively. The CIE color coordinates are ranged $X\;=\;0.13{\sim}0.18$ and $Y\;=\;0.10{\sim}0.16$, showing blue color. emission.

• Journal of the Semiconductor & Display Technology
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• v.7 no.2
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• pp.59-62
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• 2008

The Lifetime of OLEDs by ITO/glass substrates cleaning method and cathode deposition method were investigated in the fabrication of green light emitting OLEDs with $Alq_3$-C545T fluorescent system. In our experiments, the optimum cleaning method was obtained at last processing of boiling IPA(isopropyl alcohol). And the optimum deposition methode was obtained at 3 steps deposition rate of Al. The deposition rate of 3 steps progressed changing from $0.5\AA$/sec to $3\AA$/ sec. The green light emitting OLED with plasma treatment at 150W for 2 minutes showed the highest luminance and efficiency of 20000 cd/$m^2$ and 16 lm/W. On the contrary, the OLED device without plasma treatment showed much lower performance with the luminance and efficiency of 3500 cd/$m^2$ and 2 lm/W.

• Korean Journal of Materials Research
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• v.19 no.6
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• pp.313-318
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• 2009

Polymer Light Emitting Diodes (PLEDs) with an ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structure were prepared on plasma-treated ITO/glass substrates using spin-coating and thermal evaporation methods. The annealing effects of the PFO-poss film when it acts as the emission layer were investigated by using electrical and optical property measurements. The annealing conditions of the PFO-poss emission film were 100 and $200^{\circ}C$ for 1, 2 and 3 hours, respectively. The luminance increased and the turn-on voltage decreased when the annealing temperature and treatment time increased. After examining the Luminance-Voltage (L-V) properties of the PLED, the maximum luminance was found to be 1497 cd/$m^2$ at 11 V for the device when it was annealed at $200^{\circ}C$ for 3 hours. The peak intensity of the PLED emission spectra at approximately 525 nm in wavelength increased when the annealing temperature and time of the PFO-poss film increased. These results suggest that the light emission color shifted from blue to green.