• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.802-807
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• 2015

This paper describes the development of a piezoelectric level switch, which aims to effectively monitor the level status in high ambient temperatures. In order to adjust the impedance near the resonant frequency and temperature characteristics, the effect of the case and backing layer materials on its performance was analyzed using the finite element method (FEM). The suggested prototype new level switch has three heat-sink plates attached to SUS bar of 230 mm long, and case of PEEK which contains PZT sensing part. To illustrate the validity of this level switch, 10 samples are prepared and investigated the sensing performance through the high and low temperature ambient.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.5
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• pp.1-12
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• 1999

A new algorithm of constructing binary decision diagram(BDD) for design verification of switch-level circuits is proposed in this paper. In the switch-level circuit, functions are characterized by serial and parallel connections of switches and the final logic values may have high-impedance and unstable states in addition to the logic values of 0 and 1. We extend the BDD to represent functions of switch-level circuits as acyclic graphs so called switch-level binary decision diagram (SLBDD). The function representation of the graph is in the worst case, exponential to the number of inputs. Thus, the ordering of decision variables plays a major role in graph sizes. Under the existence of pass-transistors and domino-logic of precharging circuitry, we also propose an input ordering algorithm for the efficiency in graph sizes. We conducted several experiments on various benchmark circuits and the results show that our algorithm is efficient enough to apply to functional simulation, power estimation, and fault-simulation of switch-level design.

• The Transactions of the Korea Information Processing Society
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• v.4 no.2
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• pp.628-638
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• 1997

This paper describes an implementation of fault simulator that can switch level fault models such as transistor stuck-open and stuck-closed faults as well as stuck-at faults. It overcomes the limitation when only stuck-at faults are used in VLSI circuits. Signal flow of a transistor switch is bidirectional in its nature, but most of signal flows in a switch level circuits, about 95%, are in one direction. This fault simulator focuses on the way which changes a switch level circuit into a graph model with two directed edges. Two paths from Vdd to ground and from ground to directions. Logic simulation is performed along dominant signal flows. The switch level fault simulation estimates the dominant path by injecting switch-level fualts, and pattern vectors are used for faults simulation. Experimental results are shown to demonstrate correctness of the fault simulator.

• Journal of Sensor Science and Technology
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• v.20 no.1
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• pp.58-63
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• 2011

A low loss radio frequency(RF) micro electro mechanical systems(MEMS) switch driven by a low actuation voltage was designed for the development of a new RF MEMS switch. The RF MEMS switch should be encapsulated. The glass cap and fabricated RF MEMS switch were assembled by the Au/Sn eutectic bonding principle for wafer-level packaging. The through-vias on the glass substrate was made by the glass dry etching and Au electroplating process. The packaged RF MEMS switch had an actuation voltage of 12.5 V, an insertion loss below 0.25 dB, a return loss above 16.6 dB, and an isolation value above 41.4 dB at 6 GHz.

• Journal of electromagnetic engineering and science
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• v.14 no.4
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• pp.411-414
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• 2014

A switch is one of the most useful circuits for controlling the path of signal transmission. It can be added to digital circuits to create a kind of gate-level device and it can also save information into memory. In RF subsystems, a switch is used in a different way than its general role in digital circuits. The most important characteristic to consider when designing an RF switch is keeping the isolation as high as possible while also keeping insertion loss as low as possible. For high isolation, we propose leakage signal cancellation and inductive switching for designing a singlepole double-throw (SPDT) RF switch. By using the proposed method, an isolation level of more than 23 dB can be achieved. Furthermore, the heterojunction bipolar transistor (HBT) process is used in the RF switch design to keep the insertion loss low. It is demonstrated that the proposed RF switch has an insertion loss of less than 2 dB. The RF switch operates from 1 to 8 GHz based on the $0.18-{\mu}m$ SiGe HBT process, taking up an area of $0.3mm^2$.

• The Transactions of the Korea Information Processing Society
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• v.4 no.1
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• pp.311-323
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• 1997

This paper presents a fast fault simulation system for detecting stuck-at faults in mixed-level combinational logic circuits with gale level and switch -level primitives. For a practical fault simulator, the types are not restricted to static switch-level and/or gate-level circuits, but include dynamic switch-level circuits. To efficiently handle the multiple signal contention problems at wired logic elements, we propose a six-valued logic system and its logic calculus which are used together with signal strength information. As a basic algorithm for the fault simulation process, a well -known gate-level parallel pattern single fault propagation(PPSFP) technique is extended to switch-level circuits in order to handle pass-transistor circuits and precharged logic circuits as well as static CMOS circuits. Finally, we demonstrate the efficiency of our system through the experimental results for switch-level ISCAS85 benchmark combinational circuits and various industrial mixed-level circuits.

• The Transactions of the Korean Institute of Power Electronics
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• v.23 no.3
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• pp.153-160
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• 2018

Recent trends in high-power-density applications have highlighted the importance of designing power converters with high-frequency operation. However, conventional LLC resonant converters present limitations in terms of high-frequency driving due to switching losses during the turn-off period. Switching losses are caused by the overlap of the voltage and current during this period, and can be decreased by reducing the switch voltage. In turn, the switch voltage can be reduced through a series connection of four switches, and additional circuitry is essential for balancing the voltage of each switch. In this work, a three-level LLC resonant converter that can operate at high frequency is proposed by reducing switch losses and balancing the voltages of all switches with only one capacitor. The voltage-balancing principle of the proposed circuit can be extended to n-level converters, which further reduces the switch voltage stress. As a result, the proposed circuit is applicable to high-input applications. To confirm the validity of the proposed circuit, theoretical analysis and experimental verification results from a 350 W-rated prototype are presented.

• International Commerce and Information Review
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• v.6 no.1
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• pp.157-189
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• 2004

Recently, Digital Switch has risen as one of the important issues on which academic and industrial world focus in order to bring organizational transformation to a company that wants to adapt itself to the rapidly changing business environment. However, the discussion in the Digital Switch has been so much concentrated in the study of each static system, model of their performance and the development of monitoring each of them, that only few theoretical research has been carried out on the dynamic process of how each system in the organization experienced the change in terms of the level of digital transformation that can occur in the whole organization facing the change of digital environment. Therefore this thesis aims to develop a new model & strategy of switching to global digital by OEM companies in Jeonlabuk-do that enables us to check out and predict the Digital Switch progress. This model is the first Digital Switch process evaluation intended for empirical study, especially by integrating the many indices that have not been examined empirically by the existing studies. We expect that the results from this research will help corporate e-business strategy planners to devise and analyze the Digital Switch strategies effectively by recognizing the companies' current situation in comparison with their previous and other firms' level, respectively.

• Journal of Power Electronics
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• v.16 no.2
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• pp.490-497
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• 2016

The analysis of the switch status of each unit module of a cascaded multi-level inverter reveals that the working condition of the switch of a chopper arm causes unnecessary switching under the conventional unipolar sinusoidal pulse width modulation (SPWM). With an increase in the number of cascaded multilevel inverters, the superposition of unnecessary switching gradually occurs. In this work, we propose an improved SPWM strategy to reduce switching in cascaded multilevel inverters. Specifically, we analyze the switch state of the switch tube of a chopper arm of an H-bridge unit. The redundant switch is then removed, thereby reducing the switching frequency. Unlike the conventional unipolar SPWM technique, the improved SPWM method greatly reduces switching without altering the output quality of inverters. The conventional unipolar SPWM technique and the proposed method are applied to a five-level inverter. Simulation results show the superiority of the proposed strategy. Finally, a prototype is built in the laboratory. Experimental results verify the correctness of the proposed modulation strategy.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.1
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• pp.180-184
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• 2013

In this paper, a low power antenna switch controller IC is designed using a silicon-on-insulator (SOI) CMOS technology. To improve power handling capability and harmonic distortion performance of the antenna switch, the proposed antenna switch controller provides 3-state logic level such as +VDD, GND, and -VDD for the gate and body of switch of FETs according to decoder signal. By employing input-coupled current ring oscillator and hardware efficient level shifter, the proposed controller greatly reduces power consumption and hardware complexity. It consumes 135 ${\mu}A$ at a 2.5 V supply voltage in active mode, and occupies $1.3mm{\times}0.5mm$ in area. In addition, it shows fast start-up time of 10 ${\mu}s$.