• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.05a
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• pp.445-447
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• 2016

Performance comparison between Tunneling Field-Effect Transistors (TFETs) was examined when three types of device parameter of double-gate TFET (DG-TFET) and single-gate TFET (SG-TFET) are varied. When the channel length is over 30 nm, silicon thickness is below 20 nm, and a gate insulator thickness decreases, the performance of $I_{on}$ and SS in SG-TFETs and DG-TFETs enhances. It shows that the performance of the DG-TFETs is improved than that of SG-TFETs at three types of device parameter.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.758-765
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• 1986

The design, fabrication and performance of vertical double diffused power MOSFET (VDMOS) were described. On the antimony (Sb) doped (~7x10**17 cm**-3) silicon substrate (N+), epitaxial layer(N-) was grown. The thickness and the resistivity of this layer were 32\ulcorner and about 12\ulcorner-cm, respectively. The P- channel length which was controlled by sequential P-/N+ double diffuison method was about 1~2 \ulcorner, and was processed with the self alignment of 21 \ulcorner width poly silicon. To improve the breakdown voltage with constant on-resistance (Ron) about 1\ulcorner, three P+ guard rings were laid out around main pattern. With chip size of 4800\ulcorner x4840 \ulcorner, the VDMOS has shown breakdown voltage of 410~440V, on-resistance within 1.0~1.2\ulcornerand the current capablity of more than 5A.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.10
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• pp.522-531
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• 2001

A large dispersion value in optical fiber cable should be maintained to suppress the nonlinear effect induced distortion for the narrow channel spaced DWDM system while small value of dispersion is needed for high bit rate transmission. To meet these two requirement simultaneously, dispersion distribution control method during the cabling process was exploited. And dispersion distribution cable was fabricated by the way of designing alternation sections in single cable piece with standard single mode fiber(SSMF) and newly developed negative dispersion fiber(NDF). It is shown that the discretely dispersion varying cable along the axis keep the same average dispersion value of an entire cable length as that of nonzero dispersion shifted fiber(NZDSF) with 3.6 ps/km/nm while the local dispersion is around 17 ps/km/nm of absolute value. Moreover, the developed cable had good optical and mechanical properties and the feasibility of this cable for practical use was confirmed.

• Journal of the Korean Institute of Intelligent Systems
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• v.14 no.5
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• pp.583-586
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• 2004

Transition jitter noise is one of major sources of detection errors in high density recording channels. Implementation complexity of the optimal detector for such channels is high due to the data dependency and correlated nature of the jitter noise. In this paper, two types of hardware efficient sub-optimal detectors are derived by modifying branch metric of Viterbi algorithm and applied to partial response (PR) channels combined with run length limited modulation coding. The additional complexity over the conventional Viterbi algorithm to incorporate the modified branch metric is either a multiplication or an addition for each branch metric in the Viterbi trellis.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.446-448
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• 2000

Organic semiconductors based on vacuum-deposited films of fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, pentacene thin films and electrode materials were deposited by Organic Molecular Beam Deposition (OMBD) and vacuum evaporation respectively. For the gate dielectric layer, OPTMER PC403 photo acryl (JSR Coporation.) was spin-coated and cured at $220^{\circ}C$. Electrical characteristics of the devices were investigated, where the channel length and width was $50{\mu}m$ and 5 mm. It was found that field effect mobility was $0.039\;cm^2V^{-1}s^{-1}$, threshold voltage was -7 V, and on/off current ratio was $10^6$.

• Journal of the Korean Applied Science and Technology
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• v.18 no.3
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• pp.191-196
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• 2001

Organic semiconductors based on vacuum-deposited films of fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, pentacene thin films and electrode materials were deposited by Organic Molecular Beam Deposition (OMBD) and vacuum evaporation respectively. For the gate dielectric layer, photoacryl (OPTMER PC403 from JSR Co.) was spin-coated and cured at $220^{\circ}C$. Electrical characteristics of the device were investigated, where the channel length and width was 50 ${\mu}m$ and 5 mm. It was found that field effect mobility was 0.039 $cm^{2}V^{-1}s^{-1}$, threshold voltage was -8 V, and on/off current ratio was $10^{6}$. Further details will be discussed.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.102-107
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• 1999

In this paper, to develop the fiber optic hydrophone for the use of low frequency applications, two channels TDM(Time Division Multiplexing) fiber-optic hydrophone array was fabricated and their acoustic charateristics were investigated in the acoustic water tank. A fiber length of the order of 150m is wounded at the hollow cylinder type aluminum mandrel and the fundamental natural frequency of the mandrel maintained above 10kHz. An unbalanced interferometer (discrete Mach-Zehnder type) was used. Sound detection performance is tested in the underwater tank with 3kHz continuous sound source. Finally, it is shown that two channels TDM fiber-optic hydrophone array can detect 3kHz sound stably. This results can also applicable for the development of multi-channel fiber optic hydrophone array.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.1-6
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• 2004

Effective gate resistance, extracted by direct extraction method, is analyzed among various gate length, in nanoscale MOSFET for RFIC. Extracted effective gate resistance is compared to measured data and verified with simplified model. Extracted parameters are accurate to 10GHz. In the same process technology effect has a different kind of gate voltage dependency and frequency dependency compared with general effective gate resistance. Particularly, the characteristic of effective gate resistance before and after threshold voltage is noticeable. When gate voltage is about threshold voltage, effective gate resistance is abnormally high. This characteristic will be an important reference for RF MOSFET modeling using direct extraction method.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.12
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• pp.1765-1767
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• 2016

Non-coherent UWB receivers are promising due to the low hardware complexity while the coherent receiver such as the rake receiver requires the complex hardware to estimate channel characteristics and get the synchronization. In this letter, the block coded modulation scheme as one of the most promising method is enhanced in terms of the performance. The performance enhancement is carried out by the modification of the block structure with unequal frame length for each pulse. Simulation results show that the proposed method has the performance enhancement by the transmission rate or bit error rate.

• The Bulletin of The Korean Astronomical Society
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• v.43 no.1
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• pp.53.3-54
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• 2018

Solar Proton Events (SPEs) are the energetic phenomena related particle acceleration occurred in solar corona. Conventionally, they have been classified into two groups as the impulsive and gradual cases caused by reconnection in the flaring site and by shock generated by CME, respectively. In the previous studies, we classified these into four groups by analyzing the proton acceleration patterns in multi-energy channel observation. This showed that acceleration due to the magnetic reconnection may occur in the corona region relatively higher than the flaring site. In this study, we analyzes 54 SPEs observed in the energy band over 25 MeV from 2009 to 2013, where STEREO observations as well as SOHO can be utilized. From the multi-positional observation, we determine the exact time at which the Sun-Earth magnetic field line meets the CME shock structure by considering 3-dimensional structure of CME. Also, we determine the path length by considering the solar wind velocity for each event, so that the SPE onset time near the sun is obtained more accurately. Based on this study, we can get a more understanding of the correlation between CME progression and proton acceleration in the solar coronal region.