• 대한전자공학회논문지
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• 제23권6호
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• pp.814-819
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• 1986

In this work the electrical conduction and breakdown properties of thermal oxides grown on phosphorus-doped polysilicon have been investigated by using ramped I-V measurements. The oxide films, grown from phosphorus-doped polysilicon deposited at 560\ulcorner, have higher breakdown field(6.8MV/cm) and lower leakage current than those deposited at 625\ulcorner. Also the effective energy barrier height(\ulcorner)calculated from the Fowler-Nordheim curve of polyoxide was 0.76eV for 560\ulcorner deposited film and 0.64eV for 625\ulcorner deposited film.

• Journal of Korean Neurosurgical Society
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• 제42권5호
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• pp.363-366
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• 2007

Objective : Kyphoplasty performed in the middle thoracic spine presents technical challenges that differ from those in the lower thoracic or lumbar region due to small pedicle size and angular severity for thoracic kyphosis. The purpose of this study was to evaluate the efficacy of balloon kyphoplasty through extrapedicular approach for the treatment of intractable osteoporotic compression fractures in the middle thoracic spine. Methods : The patients who were performed with one level balloon kyphoplasty through extrapedicular approach due to painful osteoporotic compression fractures at T5-T8 from June 2003 to July 2005 were retrospectively analyzed. Imaging and clinical features were analyzed including involved vertebrae level, vertebral height, Injected cement volume, clinical outcome and complications. Results : Eighteen female patients (age ranged from 60 to 77 years old) were included in this study. The average amount of the implanted cement was $4.2{\pm}1.5\;cc$. The mean cobb angle and compression rate were improved from $12.1{\pm}6.5^{\circ}$ to $8.5{\pm}7.2^{\circ}$ and from 30% to 15%, respectively. The mean pain score (visual analogue scale) prior to kyphoplasty was 7.9 and it decreased to 3.0 after the procedure. Cement leakage to the adjacent disc (2 cases) and paravertebral soft tissues (1 case) were seen but there were no major complications such as pneumothorax, segmental arte 이 Injury, pulmonary embolism, or epidural leakage. Conclusion : Balloon kyphoplasty through extrapedicular approach is considered as a safe and effective in treating the middle thoracic regions with low complication rate.

• 제어로봇시스템학회논문지
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• 제11권7호
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• pp.578-586
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• 2005

Air mattress is now used widely to prevent the pressure ulcer by reducing the localized pressure peaks. The pressure control method based on the anthrophometric model of an air-cell mattress developed in this study is presented. The air-cell mattress has 18 cylindrical air cells made of porous material allowing air leakage. Even though the air leakage can contribute to reducing the development of pressure ulcer by lowering the pressure peak, temperature and humidity, the air pressure changes with time and the desired air-cell pressure has to be determined as an optimal value for each user. To select the desired air-cell pressure, we first divide the parts of the body into four sections such as head, trunk, hip, and leg. Then, the pressure of each section grouped with air-cells is calculated from the weight of each part estimated from the individual height and body weight. Air supply system for the air-cell mattress is implemented by using four electronic solenoid valves and an air compressor, and it is driven by a real-time microcontroller. We experimented with five subjects of the contact pressure on skin. The experimental results show that the proposed air-cell mattress is effective for the prevention of the pressure ulcer.

• The Korean Journal of Pain
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• 제19권2호
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• pp.261-265
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• 2006

A vertebral compression fracture can cause chronic back pain, and may also result in progressive kyphosis. The traditional treatments of a vertebral compression fracture include bed rest, analgesics and bracing. Balloon kyphoplasty can restore the vertebral height and allow safe bone cement injection into the cavity made by the balloon, which significantly reduces the risk of cement leakage compared to vertebroplasty. An 82-year-old female patient suffered from severe low back pain. Due to the intractable pain and immobility, which could not be relieved by conventional care, as well as the empty vertebral body associated with communicated fractures of the vertebral surfaces, balloon kyphoplasty, with a thicker bone cement injection than usual with balloon kyphoplasty, was chosen. The preoperative intractable pain and immobility were dramatically relieved soon after the procedure, without any complications.

• 한국작물학회지
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• 제43권3호
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• pp.147-151
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• 1998

The conductivity test is a measure of electrolytes leakage from plant tissue. The shorter the maturation period after heading was the greater electrical conductivity (EC) of rice seed. The polymer-coated seed was not different in EC compared with non-coated seed. As soaking time of rice seed increased, EC increased gradually. The EC varied from 9.9 to 20.7$\mu$S $cm^{-1}g^{-l}$ for control plots and from 21.3 to 41.7$\mu$S $cm^{-1}g^{-l}$ for heat-killed seeds which were produced by autoclaving seeds at 121$^{\circ}C$ for 20 minutes. The germination speed (the rate of 5th day) of rice seed was 94% at control plot, 83% at low temperature and 20% at high temperature. Besides, germination percentage was 95% for the control, 92% for the low temperature treatment and 39% for the high temperature treatment. The EC was negatively correlated (r=-0.771$^{**}$) with germination percentage at low temperature. Water uptake in seeds of 30, 40, 50 days after heading (DAH) was greater than that of 20 DAH. Plant height of seedlings was 9.84 cm for the control but 4.32 cm for the high temperature treatment, and the tallest for polymer-coated seed. Dry weight of seedlings was 0.841 g for the control and 0.287 g at high temperature. Besides, the polymer-coated seed was heavier than non-coated seed. The number of roots was largest from 40 to 50 DAH and polymer-coated seed, but was decreased from 20 to 30 DAH. The length of roots was 20.52 cm at control plot and 19.89 cm polymer-coated seed but 8.68 cm for the low temperature treatment and 7.28 cm for the high temperature treatment.

• 한국결정학회:학술대회논문집
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• 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
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• pp.42-43
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• 2002

반도체 디바이스의 발전은 높은 직접화 및 동작 속도를 추구하고 있으며, 이를 위해서 MOSFET의 scale down시 발생되는 문제를 해결해야만 한다. 특히, Channel이 짧아짐으로써 발생하는 device의 열화현상으로 동작전압의 조절이 어려워 짐을 해결해야만 하며, gate oxide 두께를 줄임으로써 억제할 수 있다고 알려져 왔다. 현재, gate oxide으로 사용되고 있는 SiO2박막은 비정질로써 ～8.7 eV의 높은 band gap과 Si기판 위에서 성장이 용이하며 안정하다는 장점이 있으나, 두께가 1.6 nm 이하로 얇아질 경우 전자의 direct Tunneling에 의한 leakage current 증가와 gate impurity인 Boron의 channel로의 확산, 그리고 poly Si gate의 depletion effect[1,2] 등의 문제점으로 더 이상 사용할 수 없게 된다. 2001년 ITRS에 의하면 ASIC제품의 경우 2004년부터 0.9～l.4 nm 이하의 EOT가 요구된다고 발표하였다. 따라서, gate oxide의 물리적인 두께를 증가시켜 전자의 Tunneling을 억제하는 동시에 유전막에 걸리는 capacitance를 크게 할 수 있다는 측면에서 high-k 재료를 적용하기 위한 연구가 진행되고 있다[3]. High-k 재료로 가능성 있는 절연체들로는 A1₂O₃, Y₂O₃, CeO₂, Ta₂O, TiO₂, HfO₂, ZrO₂,STO 그리고 BST등이 있으며, 이들 재료 중 gate oxide에 적용하기 위해 크게 두 가지 측면에서 고려해야 하는데, 첫째, Si과 열역학적으로 안정하여 후속 열처리 공정에서 계면층 형성을 배제하여야 하며 둘째, 일반적으로 high-k 재료들은 유전상수에 반비례하는 band gap을 갖는 것으로 알려줘 있는데 이 Barrier Height에 지수적으로 의존하는 leakage current때문에 절연체의 band gap이 낮아서는 안 된다는 점이다. 최근 20이상의 유전상수와 ～5 eV 이상의 Band Gap을 가지며 Si기판과 열역학적으로 안정한 ZrO₂[4], HfiO₂[5]가 관심을 끌고 있다. HfO₂은 ～30의 고유전상수, ～5.7 eV의 높은 band gap, 실리콘 기판과의 열역학적 안전성 그리고 poly-Si와 호환성등의 장점으로 최근 많이 연구가 진행되고 있다. 또한, Hf은 SiO₂를 환원시켜 HfO₂가 될 수 있으며, 다른 silicide와 다르게 Hf silicide는 쉽게 산화될 수 있는 점이 보고되고 있다.

• 한국화재소방학회논문지
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• 제33권4호
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• pp.121-129
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• 2019

정부는 2015년 보다 체계적이고 안전하게 화학물질을 관리하고 취급 할 수 있도록 법 제명 변경과 함께 「화학물질관리법」을 전부개정 하였으며, 특히 유해화학물질을 제조·저장·보관하는 취급시설의 설치 및 관리 기준을 대폭 강화하였다. 하지만, 일부 취급시설 기준의 경우 물리적인 공간부족과 시설개선과정 중 사고발생우려 등의 이유로 강화된 기준을 이행하기 어려운 상황이 생김에 따라 이러한 시설에 대해 2018년부터 "안전성평가"라는 특례를 운영하고 있다. 본 연구에서는 유해화학물질 누출궤적 평가모듈 개발을 통해 현장에 설치된 염산과 황산 저장탱크의 방류벽 높이 적정성을 검증하고 이격거리에 따른 방류벽 높이를 제시하였다. 이를 활용하여 산업현장에서는 보다 손쉽게 해당 취급시설의 안전성 평가 특례신청이 가능할 것으로 판단된다. 또한, 본 연구의 결과는 유해화학물질 취급시설의 설계에도 활용하여 유해화학물질 취급시설의 안전성 향상에 기여할 것으로 기대된다.

• 대한기계학회논문집B
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• 제29권4호
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• pp.495-503
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• 2005

Experiments were conducted in a low speed stationary annular cascade to investigate local heat transfer characteristics on the tip and shroud and the effect of inlet Reynolds number on the tip and shroud heat transfer. Detailed mass transfer coefficients on the blade tip and the shroud were obtained using a naphthalene sublimation technique. The turbine test section has a single stage composed of sixteen guide vanes and blades. The chord length and the height of the tested blade are 150 mm and about 125 mm, respectively. The blade has flat tip geometry and the mean tip clearance is about $2.5{\%}$of the blade chord. The inlet flow Reynolds number based on chord length and incoming flow velocity is changed from $1.0{\times}10^{5}\;to\;2.3{\times}10^{5}.$ to investigate the effect of Reynolds number. Flow reattachment after the recirculation near the pressure side edge dominates the heat transfer on the tip surface. Shroud surface has very intricate heat/mass transfer distributions due to complex flow patterns such as acceleration, relaminarization, transition to turbulent flow and tip leakage vortex. Heat/mass transfer coefficient on the blade tip is about 1.7 times as high as that on the shroud or blade surface. Overall averaged heat/mass transfer coefficients on the tip and shroud are proportional to $Re_{c}^{0.65}\;and\;Re_{c}^{0.71},$ respectively.

• 한국재료학회지
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• 제29권8호
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• pp.463-468
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• 2019

The electrical and interfacial properties of $HfO_2/Al_2O_3$ and $Al_2O_3/HfO_2$ dielectrics on AlN/p-Ge interface prepared by thermal atomic layer deposition are investigated by capacitance-voltage(C-V) and current-voltage(I-V) measurements. In the C-V measurements, humps related to mid-gap states are observed when the ac frequency is below 100 kHz, revealing lower mid-gap states for the $HfO_2/Al_2O_3$ sample. Higher frequency dispersion in the inversion region is observed for the $Al_2O_3/HfO_2$ sample, indicating the presence of slow interface states A higher interface trap density calculated from the high-low frequency method is observed for the $Al_2O_3/HfO_2$ sample. The parallel conductance method, applied to the accumulation region, shows border traps at 0.3~0.32 eV for the $Al_2O_3/HfO_2$ sample, which are not observed for the $Al_2O_3/HfO_2$ sample. I-V measurements show a reduction of leakage current of about three orders of magnitude for the $HfO_2/Al_2O_3$ sample. Using the Fowler-Nordheim emission, the barrier height is calculated and found to be about 1.08 eV for the $HfO_2/Al_2O_3$ sample. Based on these results, it is suggested that $HfO_2/Al_2O_3$ is a better dielectric stack than $Al_2O_3/HfO_2$ on AlN/p-Ge interface.

• 전자공학회논문지D
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• 제35D권11호
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• pp.70-77
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• 1998

본 논문에서는 nickel/silicon carbide(Ni/SiC) 접합에 의한 Schottky 다이오드를 제작하고, 그 전기적 특성을 조사하였다. Ni/4H-SiC의 경우, 산화막 모서리 단락을 하였을 때 상온에서 973V의 역방향 항복전압이 측정되었으며 이는 모서리 단락되지 않은 Schottky 다이오드의 역방향 항복전압 430V에 비해 매우 높았다. Ni/6H-SiC Schottky 다이오드의 경우, 산화막으로 모서리 단락시켰을 때와 시키지 않았을 때의 역방향 항복전압은 각각, 920V와 160V 였다. 고온에서의 소자 특성도 매우 좋아서 Ni/4H-SiC Schottky 다이오드와 Ni/6H-SiC Schottky 다이오드 모두 300℃까지 전류 특성의 변화가 거의 없었으며 550℃에서도 양호한 정류 특성을 보였다. 상온에서의 Schottky barrier height와 이상인자(ideality factor) 및 specific on-resistance는 Ni/4H-SiC의 경우는 1.55eV, 1.3, 3.6×10/sup -2/Ω·㎠이었으며 Ni/6H-SiC Schottky 다이오드의 경우에 1.24eV, 1.2, 2.6×10/sup -2Ω·㎠/로 나타났다. 실험 결과 Ni/4H-SiC 및 Ni/6H-SiC Schottky 다이오드 모두 고온, 고전압 소자로서 우수한 특성을 나타냄이 입증되었다.