• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.801-802
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• 1992

Poly Si TFTs have been fabricated from low temperature annealed a-Si films. I-V and C-V characteristics in the off-state region were measured. Analytical model for the leakage current in the off-state was suggested. In the measurement, capacitance increased abruptly with Increasing gate and drain voltage. This phenomena is attributed to the leakage current.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1705-1708
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• 2006

Nanocrystalline silicon (nc-Si) based TFTs were developed using a conventional PECVD production system. Devices exhibit very interesting characteristics, in particular when using a bi-layer structure which reduces leakage current and improves subthreshold area. Good stability and low leakage current make these devices suitable for the fabrication of low-cost and high performance AMOLED displays.

• Proceedings of the KIEE Conference
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• 2003.07e
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• pp.24-27
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• 2003

In this paper, We make experiment on two methode for GaAs MESFET with temperature variation. One method, we mesure gate leakage current at open source electrode. another we mesure gate leakage current at short source electrode. The difference of two current has been tested and provide that the existence of another source to Schottky barrier height against the image force lowering effect.

• Journal of IKEEE
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• v.16 no.3
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• pp.265-273
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• 2012

Data stability and leakage power dissipation have become a critical issue in scaled SRAM design. In this paper, an advanced 8T SRAM cell improving the read and write stability of data storage elements as well as reducing the leakage current in the idle mode is presented. During the read operation, the bit-cell keeps the noise-vulnerable data 'low' node voltage close to the ground level, and thus producing near-ideal voltage transfer characteristics essential for robust read functionality. In the write operation, a negative bias on the cell facilitates to change the contents of the bit. Unlike the conventional 6T cell, there is no conflicting read and write requirement on sizing the transistors. In the standby mode, the built-in stacked device in the 8T cell reduces the leakage current significantly. The 8T SRAM cell implemented in a 130 nm CMOS technology demonstrates almost 100 % higher read stability while bearing 20 % better write-ability at 1.2 V typical condition, and a reduction by 45 % in leakage power consumption compared to the standard 6T cell. The stability enhancement and leakage power reduction provided with the proposed bit-cell are confirmed under process, voltage and temperature variations.

• The KSFM Journal of Fluid Machinery
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• v.7 no.1 s.22
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• pp.36-44
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• 2004

Three-dimensional vortical flow and separated flow topology near the casing wall in an axial flow fan having two different tip clearances have been investigated by a Reynolds-averaged Navier-Stokes (RANS) flow simulation. The simulation shows that the tip leakage vortex formed close to the leading edge of the blade tip on suction side grows in the streamwise direction. On the casing wall, a separation line is formed upstream of the leakage vortex center due to the interference between the leakage vortex and main flow. The reverse flow is observed between the separation line and the attachment line generated downstream of the trailing edge, and increased with enlarging tip clearance. The patterns of a leakage velocity vector including a leakage flow rate are also analyzed according to two tip clearances. It is noted that the understanding of the distribution of a limiting streamline on the casing wall is very important to grasp the characteristics of the vortical flow in the axial flow fan.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.207-210
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• 1998

Surface electrical conduction in insulator is most important factor to assess the insulation performances of outdoor insulating materials. In this paper, contamination performance of the widely used materials for outdoor insulator - porcelain, EPDM, Silicone rubber - were discussed by measuring properties of average leakage current and scintillation discharge pulses under artificial contamination conditions. The artificial contaminations used were deionized distilled water fog, 0.5wt% NaCl salt fog of light pollution and 2wt% NaCl salt fog of medium pollution. The average leakage current was appeared linearly with applied voltage at dry and clean surface condition. The magnitude of leakage current was almost same at different kinds of samples. In case of deionized distilled water fog, the characteristics of leakage current and applied voltage was most different to that in case of dry and clean condition. In case of salt fog pollution condition. The leakage current was increased above critical voltage. The scintillation discharges were also activated at the level the leakage current and scintillation discharges were increased with increasing pollution degree. The resistance to pollution properties of silicone rubber appeared excellent among them.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.758-762
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• 1998

Electrical conduction property of insulator surface is most important factor to assess the insulation performances of outdoor insulating materials. In this paper, contamination performance of the materials to be used for outdoor insulator such as porcelain, EPDM, silicone rubber was discussed by measuring properties of average leakage current and scintillation discharge pulses under salt fog conditions. The fog was applied by nozzle in chamber and fogging fluids were deionized distilled water, 0.5wt% NaCI solution and 2wt% NaCl solution. The average leakage current showed linearly with applied voltage at dry and clean surface condition. The magnitude of leakage current was almost same at different kinds of samples. In case of deionized distilled water fog, the characteristics of leakage current and applied voltage were much different to those in case of dry and clean condition with 2wt% salt fog. In case of slat fog pollution condition, the leakage current was increased above critical voltage. the scintillation discharges were also activated at the level. The leakage current and scintillation discharges were increased with increasing pollution degree. The resistance to pollution properties of silicone rubber appeared excellent among them.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.3
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• pp.131-137
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• 2005

This paper describes a new approach to the algorithm and fundamental characteristics of the device for monitoring the leakage currents flowing through zinc oxide (ZnO) surge arresters. In order to obtain a technique for a new on-line monitoring device that can be used in the deterioration diagnosis of ZnO surge arresters, the new algorithm and on-line leakage current detection device for extracting the resistive and capacitive currents using the phase shift addition method were proposed. The computer-based on-line monitoring device can sense accurately the power frequency leakage currents flowing through ZnO surge arresters. The on-line leakage current monitoring device of ZnO surge arresters proposed in this work has the high sensitivity compared to the third harmonic leakage current detection devices. As a consequence, it was found that the proposed leakage current monitoring device would be useful for forecasting the defects and degradation of ZnO surge arresters.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.3
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• pp.79-86
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• 2013

In order to analyze the electrical performance of ZnO surge arresters stressed by the combined DC and AC voltages that are generated in DC/AC converter systems, the leakage current properties of ZnO surge arrester blocks deteriorated by impulse currents were investigated. The test specimens were deteriorated by the 8/$20{\mu}s$ impulse current of 2.5kA and the leakage currents flowing into the deteriorated zinc oxide(ZnO) arrester blocks subjected to the combined DC and power frequency AC voltages are measured. As a result, the leakage currents flowing through deteriorated ZnO surge arrester blocks were higher than those flowing through the fine ZnO surge arrester blocks and the larger the injection number of 8/$20{\mu}s$ impulse current of 2.5kA is, the greater the leakage current is. The leakage current-voltage curves(I-V curves) of the fine and deteriorated ZnO surge arrester blocks stressed by the combined DC and AC voltages show significant difference in the low conduction region. Also the cross-over phenomenon is observed at the voltage close to the knee of conduction on plots of I-V curves.

• The Transactions of the Korean Institute of Power Electronics
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• v.27 no.6
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• pp.507-514
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• 2022

This study proposes an optimal design process for a high-frequency transformer that has a large leakage inductance for dual-active-bridge converters. Notably, conventional design processes have large errors in designing leakage transformers because mathematically modeling the leakage inductance of such transformers is difficult. In this work, the geometric parameters of a shell-type transformer are identified, and finite element analysis(FEA) simulation is performed to determine the magnetization inductance, leakage inductance, and copper loss of various shapes of shell-type transformers. Regression models for magnetization and leakage inductances and copper loss are established using the simulation results and the machine learning technique. In addition, to improve the regression models' performance, the regression models are tuned by adding featured parameters that consider the physical characteristics of the transformer. With the regression models, optimal high-frequency transformer designs and the Pareto front (in terms of volume and loss) are determined using NSGA-II. In the Pareto front, a desirable optimal design is selected and verified by FEA simulation and experimentation. The simulated and measured leakage inductances of the selected design match well, and this result shows the validity of the proposed design process.