• Journal of Convergence for Information Technology
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• v.10 no.7
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• pp.7-13
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• 2020

IoT which is the core IT of the 4^th industrial revolution, is providing various services from users in the conversion with other industries. The IoT convergence technology is leading the communication paradigm of communication environment in accordance with the increase of convenience for users. However, it is urgently needed to establish the security measures for the rapidly-developing IoT convergence technology. As IoT is closely related to digital ethics and personal information protection, other industries should establish the measures for coping with threatening elements in accordance with the introduction of IoT. In case when security incidents occur, there could be diverse problems such as information leakage, damage to image, monetary loss, and casualty. Thus, this paper suggests a certificate management technique for safe control over access in IoT-based Cloud convergence environment. This thesis designed the device/user registration, message communication protocol, and device renewal/management technique. On top of performing the analysis on safety in accordance with attack technique and vulnerability, in the results of conducting the evaluation of efficiency compared to the existing PKI-based certificate management technique, it showed about 32% decreased value.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.777-788
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• 2014

This paper presents a wide output range, high power efficiency reconfigurable charge pump for driving touch panels with the high resistances. The charge pump is composed of 4-stages and its configuration automatically changes based on the required output voltage level. In order to keep the power efficiency over the wide output voltage range, internal blocks are automatically activated or deactivated by the clock driver in the reconfigurable charge pump minimizing the switching power loss due to the On and Off operations of MOSFET. In addition, the leakage current paths in each mode are blocked to compensate for the variation of power efficiency with respect to the wide output voltage range. This chip is fabricated using $0.18{\mu}m$ BCD process with high power MOSFET options, and the die area is $1870{\mu}m{\times}1430{\mu}m$. The power consumption of the charge pump itself is 79.13 mW when the output power is 415.45 mW at the high voltage mode, while it is 20.097 mW when the output power is 89.903 mW at the low voltage mode. The measured maximum power efficiency is 84.01 %, when the output voltage is from 7.43 V to 12.23 V.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.784-787
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• 2002

We prepared the PLT(28) thin film by using sol-gel method and investigated the structure and electrical properties of the film. With the XRD and AFM analyses, it is found that PLT(28) thin film annealed at 6sot has a complete perovskite structure and its surface roughness is about 22$\AA$. We prepared PLT(28) thin film on the Pt/TiO$_{x}$SiO$_2$/Si substrate, in which the specimen has a planar capacitor structure, and analyzed the electrical properties of PLT(28) thin film. In result, PLT(28) thin film has a paraelectric phase and its dielectric constant and loss tangent at 10kHz are 761 and 0.024, respectively. Also, the storage charge density and leakage current density of PLT(28) thin film at W are 134fC/$\mu$m2 and 1.01 $\mu$A/cm2, respectively. As a result of this, we concluded that the PLT(28) thin film is a promising material to be used as a capacitor dielectrics for next generation DRAM.M.

• Journal of IKEEE
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• v.21 no.1
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• pp.73-76
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• 2017

SiC devices have drawn much attentions for its wide band gap material properties. Especially 4H-SiC Schottky barrier diode is widely used for its rapid switching speed and low forward voltage drop. However, the low reliability of Schottky barrier diode has many problems that Super Barrier Rectifier(SBR) was researched for alternative. makes 4H-SiC trench-type accumulation super barrier rectifier(TASBR) is analyzed and proposed in this paper. We could verified that forward voltage drop was improved 21.06% without severe degradation of reverse breakdown voltage and leakage current based on the results from 2-D numerical simulations. With this novel rectifier structure, we can expect application with less power loss.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.5
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• pp.9-15
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• 2000

The 3 ${\mu}{\textrm}{m}$-thick PVDF (polyvinylidene fluoride) thin film have been prepared using physical vapor deposition with electric field, and its FT-IR spectrum, dielectric property and electric conduction phenomenon have been investigated. Since the characteristic peaks are detected at 509.45 ［$cm^{-1}$ /］ and 1273.6 ［$cm^{-1}$ /］in the FT-IR spectrum, we are confirmed that the $\beta$ -phase is dominant in the PVDF thin film. In the results of dielectric properties, the PVDF thin film shows anomalous dispersion, i.e. gradual decrease of dielectric constant with increase of frequency, and also that the dielectric absorption point changes from 200 Hz to 7000 Hz with increasing temperature of thin film, which is consistent with the Debye's theory. The activation energy ( $\Delta$H) obtained from temperature dependence of dielectric loss is 21.64 ㎉/mole. We confirm that the electric conduction mechanism of PVDF thin film is dominated by ionic conduction by investigating the dependence of the leakage current of the thin film on the temperature and the electric field.

• Journal of the Korea Safety Management & Science
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• v.20 no.3
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• pp.27-36
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• 2018

The steel pipe manufacturing industry deals with facilities and materials. Especially thermal facilities are close to vapor cloud explosion (VCE) and may cause secondary damage to facilities because they deal with corrosive substances such as hydrofluoric acid, sulfuric acid and acid, fire, explosion, leakage etc. It is in danger. In this study, hazard identification method was conducted using HAZOP techniques and quantitative risk analysis was conducted using e-CA, a program that supports accident impact analysis. Equipment in the influence range of ERPG - 3 was determined to be a facility requiring replacement. It was decided that neutralization is necessary using slaked lime. Based on the cost of loss, We presented the proper replacement which is the timing of the dangerous facility. As a result, It was ideal to replace the facilities with 20 years of heat treatment facilities, one year of hydrofluoric acid storage tank, 20 years of sulfuric acid storage tank, and 5 years of hydrochloric acid storage tank.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.715-723
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• 2006

Perovskite oxide materials are very important for the electronics industry, because they exhibit promising properties. With an interest in the obvious applications, significant effort has been invested in the growth of highly crystalline epitaxial perovskite oxide thin films in our laboratory. And the desired structure of films was formed to achieve excellent properties. $Y_1Ba_2Cu_3O_{7-x}$ (YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputtering. Values of microwave surface resistance R$_2$ (75 K, 145 GHz, 0 T) smaller than 100 m$\Omega$ were reached over the whole area of YBCO thin films by pre-seeded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layer structured SrTiO$_3$ (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve a large relative capacitance change and a small dielectric loss. Highly a-axis textured $Ba_{0.65}Sr_{0.35}TiO_3$ (BST65/35) thin films was grown on Pt/Ti/SiO$_2$/Si substrate for monolithic bolometers by introducing $Ba_{0.65}Sr_{0.35}RuO_3$ (BSR65/35) thin films as buffer layer. With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of $7.6\times10_{-7}$ C $cm^{-2}$ $K^{-1}$ was achieved at 6 V/$\mu$m bias and room temperature.

• Journal of the Korean Institute of Gas
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• v.23 no.5
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• pp.35-43
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• 2019

The safety of industrial valves, which are the core parts of plant facilities, are managed by manpower and there are difficulties because of side area for inspection and limited accessibility due to the nature of facilities. The industrial valves used in plant facilities cause problems such as interrupted production; a loss of life due to leak or explosion of poisonous material and flammable gases, and difficulty in locating accident positions in the event of leakage or failure. Therefore, safety management and control systems based on IoT technology are needed. This study is about the development of risk factor prediction technique among the safety management of industrial valves through IoT- based wireless communication and the development of actuator control system. We have developed IoT-based industrial valve safety management techniques to prevent accidents caused by main risk factors by conducting an analysis of the structural characteristics of valves and an analysis of the causes of main risk factors through review of failure data and literature and an analysis of accident scenarios.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.2
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• pp.64-70
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• 2007

A voltage drop in the electrical circuit must be unavoidable. The voltage drop in the electrical circuit means a loss of heat. The heat lost would change the characteristics of the insulator and thus, the insulating performance would be towered resulting in electric leakage, electric shock, power failure, fire and other accidents. Hence, an optimized design against the voltage drop in the electrical circuit must be an important factor determining safety and economy of electrical facilities. This study analyzed the effects of voltage drop on the electrical circuit for such low-voltage electrical facilities requiring the public safety foremost and subject to multi-distributed random loads as street lamps, buildings and subway stations, and thereupon, developed an optimized voltage drop computation program to enhance safety and economy of those electrical facilities.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.12
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• pp.1724-1729
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• 2015

Chlorosulfonated polyethylene (CSPE) was not flooded seawater and flooded seawater & freshwater for 5 days, respectively, and these samples are referred to as BSF(before seawater flooding) and ASFF(after seawater & freshwater flooding), respectively. The apparent density, dissipation factor, relative permittivity, melting temperature, dielectric breakdown time and increased time of applied voltage are higher than those of BSF, but the insulating resistance, dielectric strength, percent elongation and glass transition temperature of ASFF are lower than those of BSF. The differential temperature of those is $0.026{\sim}0.028(^{\circ}C)$ after AC and DC voltage is applied to ASFF, respectively, and the differential temperature of those is $0.013{\sim}0.037(^{\circ}C)$ after AC and DC voltage is applied to BSF, respectively. In the case AC and DC voltage is applied to ASFF as well as BSF, the variations in temperature of AC voltage are higher than those of DC voltage. It is investigated that dielectric loss due to dissipation factor ($tan{\delta}$) is related to electric dipole conduction current. It is certain that the ionic (electron or hole) leakage current was increased by conducting ions such as $Na^+$, $Cl^-$, $Mg^{2+}$, $SO_4^{2-}$, $Ca^{2+}$ and $K^+$, those are related to cured atoms of O and S that relatively increased after seawater flooding.