• Title/Summary/Keyword: Lead zirconate titanate

Search Result 127, Processing Time 0.022 seconds

Temperature Effect on Impedance-based Damage Monitoring of Steel-Bolt Connection using Wireless Impedance Sensor Node (무선 임피던스 센서노드를 이용한 강-볼트 접합부의 임피던스기반 손상모니터링에 미치는 온도 영향)

  • Hong, Dong-Soo;Kim, Jeong-Tae
    • Journal of Ocean Engineering and Technology
    • /
    • v.26 no.1
    • /
    • pp.27-33
    • /
    • 2012
  • This paper presents the effect of temperature on the impedance-based damage monitoring of steel-bolt connections using wireless impedance sensor nodes. In order to achieve the objective, the following approaches are implemented. First, a temperature-compensated damage monitoring scheme that includes a temperature compensation model and damage detection method is described. The temperature compensation model is designed by analyzing the linear regressions between the temperatures and impedance signatures. The correlation coefficient of the impedance signatures is selected as the damage index to monitor the damage occurrence in the target structures. Second, a wireless impedance sensor node is described for the design of the hardware components and embedded software. Finally, the performance of the temperature-compensated impedance-based damage monitoring scheme is evaluated for detecting a loose bolt in the steel-bolt connections on a lab-scale steel girder under various temperatures.

Preparation and Electrical Properties of Lead Zirconate Titanate Thick Films Fabricated by Screen-Printing Method (스크린 프린팅으로 제작된 $Pb(Zr,\;Ti)O_3$ 후막의 제작과 전기적 특성)

  • Park, Sang-Man;Lee, Sung-Gap
    • The Transactions of the Korean Institute of Electrical Engineers C
    • /
    • v.55 no.9
    • /
    • pp.429-433
    • /
    • 2006
  • PZT(80/0) powder was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The coating and drying procedure was repeated 4 times. And then the PZT(20/80) precusor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5mol/L and the number of coating was varied from 0 to 6. The porosity decreased and the grain size increased with increasing the number of coatings. The thickness of the PZT-6(6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PZT(20/80) sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 275 and 3.5%, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $19.8{\mu}C/cm^2$, 13.7kV/cm and 130kV/cm, respectively.

Vibration Control of Hvbrid Smart Structure Using PZT Patches and ER Fluids (PZT와 ER유체를 적용한 복합지능구조물의 진동제어)

  • Yun, Shin-Il;Park, Keun-Hyo;Han, Sang-Bo
    • Proceedings of the KSME Conference
    • /
    • 2003.04a
    • /
    • pp.734-739
    • /
    • 2003
  • Many types of smart materials and control laws are available to actively adjust the structure from various external disturbances. Usually, a certain type of control laws to activate a specific smart material is well established, but the effectiveness of the control scheme is limited by the choice of the smart materials and the responses of the structure. ER fluid is adequate to provide relatively large control force, on the other hand, the PZT patches are suitable to provide small but arbitrary control forces at any point along the structure. It was found that active vibration control mechanism using ER fluid failed to suppress the excitation off the resonant frequency with changed structural characteristics along the frequency response function of the closed loop of the control system. To compensate this additional peak of the closed loop system, PPF control using PZT as an actuator is added to construct a hybrid controller.

  • PDF

System identification of a building structure using wireless MEMS and PZT sensors

  • Kim, Hongjin;Kim, Whajung;Kim, Boung-Yong;Hwang, Jae-Seung
    • Structural Engineering and Mechanics
    • /
    • v.30 no.2
    • /
    • pp.191-209
    • /
    • 2008
  • A structural monitoring system based on cheap and wireless monitoring system is investigated in this paper. Due to low-cost and low power consumption, micro-electro-mechanical system (MEMS) is suitable for wireless monitoring and the use of MEMS and wireless communication can reduce system cost and simplify the installation for structural health monitoring. For system identification using wireless MEMS, a finite element (FE) model updating method through correlation with the initial analytical model of the structure to the measured one is used. The system identification using wireless MEMS is evaluated experimentally using a three storey frame model. Identification results are compared to ones using data measured from traditional accelerometers and results indicate that the system identification using wireless MEMS estimates system parameters with reasonable accuracy. Another smart sensor considered in this paper for structural health monitoring is Lead Zirconate Titanate (PZT) which is a type of piezoelectric material. PZT patches have been applied for the health monitoring of structures owing to their simultaneous sensing/actuating capability. In this paper, the system identification for building structures by using PZT patches functioning as sensor only is presented. The FE model updating method is applied with the experimental data obtained using PZT patches, and the results are compared to ones obtained using wireless MEMS system. Results indicate that sensing by PZT patches yields reliable system identification results even though limited information is available.

Interaction of Laser Beam with PZT - Target and Observation of Laser - Induced Plume and Particle Ejection (Laser와 PZT - Target간의 반응과 그에 따른 Plume 형성 및 입자 방출에 관한 연구)

  • Lee, Byeong-U
    • Journal of Advanced Marine Engineering and Technology
    • /
    • v.20 no.5
    • /
    • pp.93-102
    • /
    • 1996
  • Laser-induced plume and laser-target interaction during pulsed laser deposition are demonstrated for a lead zirconate titanate (PZT). A KrF excimer laser (wavelength 248nm) was used and the laser was pulsed at 20Hz, with nominal pulse width of 20ns. The laser fluence was~$16J/cm^2,$ with 100mJ per pulse. The laser-induced plasma plume for nanosecond laser irradiation on PZT target has been investigated by optical emission spectra using an optical multichannel analyzer(OMA) and by direct observation of the plume using an ICCD high speed photography. OMA analysis showed two distinct ionic species with different expansion velocities of fast or slow according to their ionization states. The ion velocity of the front surface of the developing plume was about $10^7$cm/sec and corresponding kinetic energy was about 100eV. ICCD photograph showed another kind of even slower moving particles ejected from the target. These particles considered expelled molten parts of the target. SEM morphologies of the laser irradiated targets showed drastic melting and material removal by the laser pulse, and also showed the evidence of the molten particle ejection. The physics of the plasma(plume) formation and particle ejection has been discussed.

  • PDF

Ferroelectric Properties of Tb-doped PZT Thin films Prepared by Sol-gel Process (졸겔법으로 제조된 Tb-doped PZT 박막의 강유전 특성)

  • 손영훈;김경태;김창일
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.17 no.9
    • /
    • pp.947-952
    • /
    • 2004
  • Tb-doped lead zirconate titanate(Pb(Zr$\_$0.6/,Ti$\_$0.4/)O$_3$; PZT) thin films on Pt(111)/Ti/SiO$_2$/Si(100) substrates were fabricated by the sol-gel method. The effect on the structural and electrical properties of films measured according to Tb content. The dielectric and ferroelectric properties of Tb-doped PZT thin films were altered significantly by Tb-doping. The PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol% Tb. The relative dielectric constant and the dielectric loss of the 0.3 mol% Tb-doped PZT thin film were 1611 and 0.024, respectively. Typical value of the swichable remanent poaraization(2Pr) and the coercive filed of the PZT film capacitor for 0.3 mol% Tb-doped were 61.4 ${\mu}$C/cm$^2$ and 61.9 kV/cm, respectively. Tb-doped PZT thin films showed improved fatigue characteristics comparing to the undoped PZT thin film.

Effect of Process Parameter on Piezoelectric Properties of PZT Thin films (PZT 박막의 압전특성에 미치는 공정변수의 효과)

  • 김동국;지정범
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.15 no.12
    • /
    • pp.1060-1064
    • /
    • 2002
  • We have studied the effect of crystallization temperature, composition and film thickness, which are the fundamental processing parameters of lead zirconate titanate(PZT) thin film fabrication, in the respect of the piezoelectric properties by our pneumatic loading method(PLM). A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. Even though the piezoelectric properties of thin films are very critical factors in the micro-electro mechanical system(MEMS) and thin film sensor devices, a few reports for the piezoelectric characterization are provided for the last decade unlikely the bulk piezoelectric devices. We have found that the piezoelectric properties of thin films are improved as the increase of crystallization temperature up to 750$\^{C}$ and this behavior can be also explained by the analysis of dielectric polarization hysteresis loop, X-ray diffraction and scanning electron microscopy. The effect of Zr/Ti composition has been also studied. This gives us the fact that the maximum piezoelectricity is found near Morphotropic Phase Boundary(MPB) as bulk PZT system does.

Processing and Characterization of Piezoelecteric Geramics Depending on Ball Milling Time (입자분쇄 시간변화에 따른 압전세라믹스 제작공정과 특성 분석)

  • Park, Jung-Ho;Bae, Suk-Hui;Kim, Chul-Su;Song, Seok-Cheon;Heo, Chang-Hoe;Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
    • /
    • 2000.11c
    • /
    • pp.413-415
    • /
    • 2000
  • Piezoelectric ceramics of PZT have been developed to apply for transformers in notebook. Use of piezoelectric ceramics in applications like piezoelectric transformers was made possible by the development of new materials with high electromechanical coupling coefficients and high mechanical quality factor. "Hard" ferroelectiric ceramics of complex composition based on lead zirconate titanate with Mn additive have been prepared. The perovskitic phase reaction of the oxides. The crucial role played by the intermediate mixing and grinding procedures in the assessment of the final properties of the material was investigated. Densification up to approximately the theoretical density value was achieved. The polarization was obtained by subjecting the samples at $30kVcm^{-1}$ poling electric field, in a silicon oil bath heated at $110^{\circ}C$. Their microstructural and morphological properties were checked by X-ray diffraction analysis and scanning electron microscopy. The optimized samples presented very high qualify and electromechanical coupling factors, together with small dielectric loss.

  • PDF

Electrical Properties of Sol-Gel Drived Ferroelectric PZT Thin Films dependent on Dry Temperature and Heat Treatment (Sol-gel법으로 제조된 강유전성 PZT박막의 건조온도 및 열처리에 따른 전기적 특성 평가)

  • 배민호;임민수;김명녕;김동규;임기조;김현후
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1999.05a
    • /
    • pp.665-668
    • /
    • 1999
  • Thin films of Pb(Zr,Ti)O$_3$ were fabricated by means of the sol-gel spin-coating method and the multi-coating of eight coating numbers. The thin films were dried on the temperature range of 250 ~ 400($^{\circ}C$), whenever the specimens were dried after each coating Processing. The fabricated ferroelectric thin films of lead zirconate titanate(PZT) were treated with the rapid thermal annealing(RTA) at 650($^{\circ}C$),or 3(min), and direct insertion thermal annealing(DITA) at 650($^{\circ}C$), for 30(min). The measured properties of dielectric thin films were following: The good results of dielectric properties were shown by the RTA specimen. The saturation polarization(Ps), remanent polarization(Pr), coercive field (Ec), dielectric constant and dielectric loss factor of the RTA specimen were estimated to be about 27.1[ $\mu$ C/$\textrm{cm}^2$], 13.7[ $\mu$ C/$\textrm{cm}^2$], 55.6(kV/cm), 786 and 6.4(%) respectively.

  • PDF

Fabrication of $Pb(Zr,Ti)O_3$ Thin Film Capacitors by Damascene Process (Damascene 공정을 이용한 $Pb(Zr,Ti)O_3$ 캐패시터 제조 연구)

  • Ko, Pil-Ju;Lee, Woo-Sun
    • Proceedings of the KIEE Conference
    • /
    • 2006.10a
    • /
    • pp.105-106
    • /
    • 2006
  • The ferroelectric materials of the PZT, SBT attracted much attention for application to ferroelectric random access memory (FRAM) devices. Through the last decade, the lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for the ferroelectric products due to its higher remanant polarization and the ability to withstand higher coercive fields. FRAM has been currently receiving increasing attention for one of future memory devices due to its ideal memory properties such as non-volatility, high charge storage, and faster switching operations. In this study, we first applied the damascene process using chemical mechanical polishing (CMP) to the fabricate the $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitor in order to solve the problems of plasma etching such as low etching profile and ion charging. The structural characteristics were compared with specimens before and after CMP process of PZT films. The scanning electron microscopy (SEM) analysis was performed to compare the morphology surface characteristics of $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ capacitors. The densification by the vertical sidewall patterning and charging-free ferroelectric capacitor could be obtained by the damascene process without remarkable difference of the characteristics.

  • PDF