• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.3
• /
• pp.200-207
• /
• 2011

Abstract: The effect of lead free glass frit compositions on the properties of thick film conductor and resistor pastes were investigated. Two types lead free frits, HBF-A(without $Bi_2O_3$) and HBF-B(with $Bi_2O_3$) were made from $SiO_2$, $B_2O_3$, $Al_2O_3$, CaO, MgO, $Na_2O$, $K_2O$, ZnO, MnO, $ZrO_2$, $Bi_2O_3$. And Ag based conductor pastes and $RuO_2$ based resistor paste were prepared by mixed with these frits and functional phase(Ag and $RuO_2$), and organic vehicle. The properties of thick film conductor and resistor sintered at $850^{\circ}C$ were studied after printing on $Al_2O_3$ substrate. The morphology of the sintered films surface were SEM and EDS were carried out to analysis the chemical composition on resistor surface and state of Ru atom in frit matrix.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.9
• /
• pp.571-576
• /
• 2015

In this study, we developed a lead-free $P_2O_5-V_2O_5-ZnO$ glass frit for sealing OLED using laser irradiation. The frit satisfied the characteristics required for laser sealing such as low glass transition temperature, low coefficient of thermal expansion (CTE), high water-resistance, and high absorption at the wavelength of the laser beam. Ceramic fillers were added to the glass frit in order to further reduce and match its CTE with that of the commercial glass substrate. The addition of Zirconium Tungsten Phosphate (ZWP) to the frit yielded the most desirable results, reducing the CTE to $45.4{\times}10^{-7}/^{\circ}C$, which is very close to that of the glass substrate ($44.0{\times}10^{-7}/^{\circ}C$). Successful formation of a solid sealing layer was observed by optical and scanning electron microscopy.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.31 no.5
• /
• pp.218-227
• /
• 2021

A thick film NTC thermistor for low temperature co-firing was manufactured by printing and sintering a paste prepared using NTC powder of Mn_1.5Ni_0.4Co_0.9Cu_0.4O₄ composition, lead free frit, and RuO₂ on a 96 % alumina substrate. The effect of frit and RuO₂ on the electrical properties of thick film NTC thermistor was studied. The resistance of the thick film NTC thermistor was higher than that of the bulk phase sintered at the same temperature, but it was found that the negative resistance temperature characteristic appeared more clearly and linearly in the resistance - temperature characteristic. On the other hand, the area resistance decreased as the sintering temperature increased, and the area resistance increased as the amount of frit added increased. The B constant of the thick film NTC thermistor was 3000 K or higher. Among them, it was found that the B constant of the thick film NTC thermistor made of paste with 5 wt% of frit added and sintered at 900℃ showed the highest B constant. Also, it can be seen that the area resistance decreased with the addition of RuO₂, and the change in the area resistance decrease of the thick film NTC thermistor obtained by sintering the paste containing 5 wt% of RuO₂ at 900℃ is the most obvious.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.335-335
• /
• 2010

$SiO_2$, $B_2O_3$, $Al_2O_3$, CaO, MgO, $Na_2O$, $ZrO_2$, $Bi_2O_3$를 이용하여 성질이 다른 두 종류의 무연계 프릿트를 제조하여 특성을 표준화 하였고, 이들 무연계 프릿트를 이용하여 Ag계 도체 및 $RuO_2$계 저항페이스트롤 제조하여 특성에 미치는 프릿트 조성의 영향을 연구하였다. $B_2O_3$를 첨가하여 퍼짐특성이 큰 프릿트의 경우 더 우수한 페이스트 특성을 나타내었다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.373-376
• /
• 2008

New glass compositions for lead free, low temperature sealing glass frit was examined in $ZnO-V_2O_5-P_2O_5$ glass system which can be used sealing material for PDP to be made of soda lime glass substrates. Among many glass compositions, KFS-C glass showed low glass transition point (Tg) and good fluidity and adhesion characteristics when it was tested by flow button method at low temperature of $420^{\circ}C$. Its Tg was $317^{\circ}C$ and thermal expansion coefficient (CTE) was $70{\times}10^{-7}/K$. The glass frit was mixed with an organic vehicle to make a paste and it was dispensed and sealed with soda lime glass substrates at $420^{\circ}C$ for 10min. Sealed glass panels also showed good adhesion strength even sealed at low temperature of $420^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.28 no.1
• /
• pp.28-37
• /
• 2018

In order to study the NTC thermistor that can be fired at low temperature, the influence of the lead free glass frit and $RuO_2$ addition on the electrical properties of the NTC thermistor of $Mn_{1.85}Ni_{0.25}Co_{0.9}O_4$ basic composition was studied. The sintering characteristics of the specimen sintered at $1000^{\circ}C$ with 10 wt% frit added to the basic NTC composition were similar to those of the specimen sintered at $1200^{\circ}C$ without frit. However, as the amount of frit increased, the electrical resistivity and B constant were increased. In order to reduce the resistance, NTC thermistor was prepared by adding 0, 2, and 5 wt% of $RuO_2$ to the composition containing 10 wt% of frit and sintered at $1000{\sim}1200^{\circ}C$, and sintering and electrical properties were measured. The electrical resistivity and the B constant tended to decrease with increasing $RuO_2$ content. However, the resistivity was the lowest at sintering temperature of $1000^{\circ}C$ and the resistance increased with increasing sintering temperature after 5 wt% $RuO_2$ addition. The NTC thermistor sintered at $1000^{\circ}C$ with 10 wt% frit and 5 wt% $RuO_2$ in the composition of NTC showed similar electrical properties and sintering characteristics when sintered at $1200^{\circ}C$ without added frit.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1225-1228
• /
• 2006

In the CNT paste for field emission, PbO frit had a fatal influence on CNTs by accelerating a decomposition of CNTs during firing. In the thermogravimetric analysis on the mixtures of CNTs and other ingredients, it was evident that CNTs began to burn out at ${\sim}350^{\circ}C$ by reacting with PbO. This problem was overcome by replacing the PbO frit by the Pb-free frit such that most of CNTs could survive during firing. Consequently, the emission current of the CNT paste prepared using the lead-free frit was improved as much as 250 %, compared to the PbO-containing one. The CNT paste was further optimized by adding a dispersant, whose dispersibility was assessed by measuring the resistance of the paste. With 10% dispersant added, the emission properties of the paste was greatly enhanced as 50 times higher as those of the paste without a dispersant.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.9
• /
• pp.646-650
• /
• 2013

$(Na,K)NbO_3$-based piezoelectric ceramics were synthesized by a liquid phase sintering method with a selected glass frit. The effects of the content of the glass frit and the sintering temperature on the microstructure and the electrical properties of the samples were investigated. With the 0.1 wt% of glass frit content, $(Na_{0.52}K_{0.44}Li_{0.06})(Nb_{0.84}Ta_{0.10}Sb_{0.06})O_3$ (NKL-NTS) ceramics showed the maximum values of the relative density (99.1%) and the electro-mechanical coupling factor ($k_p$: 0.32) at the sintering temperature of $1,050^{\circ}C$. It might mean that a liquid phase sintering with a suitable glass frit having the lower flow temperature could improve the relative density and the piezoelectric properties.

• Korean Journal of Materials Research
• /
• v.31 no.8
• /
• pp.471-479
• /
• 2021

The electrochemical reaction between lead borate glass frit doped with Sn metal filler and Ni-Cr wire of a J-type resistor during a term of Joule heating is investigated. The fusing behavior in which the Ni-Cr wire is melted is not observed for the control group but measured for the Sn-doped specimen under 30 V and 500 mA. The Sn-doped lead borate glass frit shows a fusing property compared with other metal-doped specimens. Meanwhile, the redox reaction significantly contributes to the fusing behavior due to the release of free electrons of the metal toward the glass. The electrons derived from the glass, which used Joule heat to reach the melting point of Ni-Cr wire, increase with increasing corrosion rate at interface of metal/glass. Finally, the confidence interval is 95 ± 1.95₉ %, and the adjusted regression coefficient, R in the optimal linear graph, is 0.93, reflecting 93% of the data and providing great potential for fusible resistor applications.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.61.2-61.2
• /
• 2010

Ag thick-film has usually been used for the front electrode of Si solar cells with the outstanding electrical properties. Ag paste consists of Ag powers, vehicles, frits and additives. Ag paste has broadly been screen-printed on the front side of Si wafer with the merits of low cost and simplicity. The optimal contact formation between Ag electrodes and Si wafer in the front electrode during a fast firing has been considered as the key factor for high efficiency. Although the content of frit in Ag pastes is less than 5wt%, it can profoundly influence the contact formation between Ag and Si under the fast firing. In this study, the effects of lead-free frits on the contacts between Ag and Si were studied with the thermal properties and compositions of various frits. Our experimental results showed that the electrical properties of cells were related to the interface structures between Ag and Si. It was found that current path of electrons from Si to Ag would be possible through the tunneling mechanism assisted by tens of nano-Ag recrystals on $n^+$ emitter as well as Ag recrystals penetrated into $n^+$ emitter layers. These preliminary studies will be helpful for designing the proper frits for the Ag pastes with considering the properties of various Si wafers.