• 한국염색가공학회지
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• 제18권1호
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• pp.28-32
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• 2006

A multi-layer of the dye, natural colorant Berberine, was successfully developed by the self-assembly deposition from water-soluble cationic dye(Berberine chloride) and anionic polyelectrolyte PSS(Polysodium 4-styrenesulfonate) in aqueous solution via electrostatic attraction. The corresponding results on multi-layer were characterized by UV-Vis absorbance measurements. The growth of multi-layer formed by the sequential interaction was also determined. The findings measured by UV-Vis spectrophotometer showed that the bilayer deposition characteristic was linear and highly reproducible from layer to layer.

• 정보처리학회논문지A
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• 제15A권4호
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• pp.199-210
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• 2008

무선 인터넷 프록시 서버 클러스터링에서 저장공간을 최소화하기 위해서는 URL 해싱기법을 가진 Layer 7 부하분산기가 필요하다. 서버 클러스터 앞단에 위치한 Layer 4 부하분산기는 TCP 또는 UDP와 같은 트랜스포트 계층에서 컨텐츠 내용을 확인하지 않고 사용자 요청들을 똑같은 컨텐츠를 가진 서버들에게 분배한다. 서버 클러스터 앞단에 위치한 Layer 7 부하분산기는 응용계층에서 사용자 요청을 분석하여 요청 컨텐츠 유형에 따라 해당되는 서버들에게 분배한다. Layer 7 부하분산기를 이용하면 서버들이 배타적으로 각기 다른 컨텐츠를 가지게 할 수 있어서 서버들 저장공간을 최소화할 수 있으며 전체 클러스터 성능을 향상할 수 있다. 그러나 Layer 7 부하분산기는 응용계층에서 사용자 요청을 분석하는데 요구되는 큰 처리 부담으로 인해 Layer 4 부하분산기와 다르게 확장성이 제한된다. 본 논문에서는 그 확장성 제한을 극복하기 위해서 분산형 Layer 7 부하분산기를 제안한다. 종래의 방법에서는 한 대의 Layer 7 부하분산기 를 사용하는데 본 논문에서 제안한 방법에서는 서버 클러스터 앞에 한 대의 Layer 4 부하분산기를 설치하고 서버들에게 Layer 7 부하분산기들을 각각 설치한다. 클러스터 기반의 무선 인터넷 프록시 서버에서 종래의 방법을 리눅스기반의 Layer 7 부하분산기인 KTCPVS를 이용하여 구현하였다. 본 논문에서 제안한 방법에서는 리눅스기반의 Layer 4 부하분산기인 IPVS를 사용하고 각 서버들에게 Layer 7 부하분산기인 KTCPVS를 설치하여 같이 동작하게 구현하였다. 실험은 16대의 컴퓨터를 사용하여 수행되었고, 실험 결과에 의하면 제안 방법이 종래 방법에 비해 서버 대수가 증가함에 따라 확장성 및 높은 성능 향상률을 가짐을 확인하였다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2010년도 춘계학술대회
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• pp.277-280
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• 2010

네트워크에서 OSI 7 Layer를 기반으로 통신 프로토콜이 구현되고 있고, 인터넷은 TCP/IP Layer를 중심으로 취약성이 발견되고 공격을 당하고 있다. 본 논문은 Scanning 프로그램들을 사용하여 네트워크에 Layer별로 Scanning을 실시하고 그에 따른 취약성을 각 Layer별로 분석한다. 각 Layer별 취약점과 Scanning 프로그램에서 분석 결과들에 대한 차이점을 분석 연구한다. 분석된 결과들에 대한 Scanning 프로그램에 대한 특성을 반영한 Scanning방법에 대한 특장점을 연구하고, 각 Layer별로 보안 대응 방안을 제시한다. 본 연구의 결과는 해커의 공격에 대한 취약성을 분석과 방어를 위한 보안정책 수립에 대한 자료로 활용되어 네트워크의 보안을 강화하는데 기여 할 것이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 제2회 학술대회 논문집 일렉트렛트 및 응용기술전문연구회
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• pp.40-44
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• 2000

$Bi_2Sr_2Ca_nCu_{n+1}O_y$($n{\geq}0$; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.796-800
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• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO) thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.230-234
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• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-law growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.

• International Journal of Precision Engineering and Manufacturing
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• 제7권2호
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• pp.52-55
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• 2006

The OLEDs(Organic Light-Emitting Diodes) structure organizes the bottom layer using glass, ITO(indium thin oxide), hole injection layer, hole transport layer, emitting material layer, electron transport layer, electron injection layer and cathode using metal. OLED has various advantages. OLEDs research has been divided into structural side and emitting material side. The amount of emitting light and luminescence efficiency has been improved by continuing effort for emitting material layer. The emitting light mechanism of OLEDs consists of electrons and holes injected from cathode and anode recombination in emitting material layer. The mobilities of injected electrons and holes are different. The mobility of holes is faster than that of electrons. In order to get high luminescence efficiency by recombine electrons and holes, the balance of their mobility must be set. The more complex thin film structure of OLED becomes, the more understanding about physical phenomenon in each interface is needed. This paper observed what the thickness change of hole transport layer has an affection through the below experiments. Moreover, this paper uses numerical analysis about carrier transport layer thickness change on the basis of these experimental results that agree with simulation results.

• Journal of the Korean Wood Science and Technology
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• 제15권3호
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• pp.44-55
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• 1987

In order to study the effect of sawdustboard combined with plastic chips, 0.5mm($T_1$), 1mm($T_2$), 1.4mm($T_3$) thick nylon fiber. polypropylene rope fiber(RP), and 0.23mm thick moth-proof polypropylene net fiber(NP) were cut into 0.5, 1, 2cm long plastic chips. Thereafter, sawdustboard combined with plastic chips prepared as the above and plastic non-combined sawdustboard(control) were manufactured into 3 types of one-, two-, and three layer with 5 or 10% combination level. By the discussions and results at this study, the significant conclusions of mechanical and physical properties were summarized as follows: 1. The MORs were shown in the order of 3 layer> 2 layer> 1 layer among plastic non-combined boards, and $T_3$ < $T_2$ < $T_1$ < RP (NP(5%) < NP(l0%) among plastic combined boards. In 2cm long plastic chip in 1 layer board, the highest strength through all the composition was recognized. 1 layer board showing the lower strength with 0.5cm plastic chip rendered to the bending strength improvement by 2 or 3 layer board composition. On the other hand, 2 or 3 layer combined with 1, 2cm long polypropylene net fiber chips incurred MOR's conspicuous decrease requiring optimum plastic chip combined level and consideration to combined type. 2. MOE in plastic non-combined 3 layer board exhibited sandwich construction effect by higher resin content application to surface layer in the order of 3layer>1layer>2layer with the highest stiffness of the board combined with polypropylene chip, while nylon chip-combined board had little difference from plastic non-combined board. In relevant to length and layer effect, 3 layer board combined with the 0.5cm long polypropylene net fiber chip in 5% and 10% combined level presented 34-43% and 44-76% stiffness increase against plastic non-combined board(control), respectively. Moreover, in 1 layer board, 30% stiffness increase with 10% against 5% combined level in the 1 and 2cm long polypropylene net fiber chip was obtained. 3. Stress at proportional limit(Spl) showing the fiber relationship (r: 0.81-0.97) between MOR presented in the order of 1 layer<2 layer<3 layer in plastic non-combined board. Correspondingly, combined effect by layer and plastic chip length was similar to MOR's. 4. Differently from previous properties(MOR, MOE, Spl). work to maximum load(Wml) of 2 layer board approached to that of 3 layer board. Conforming the above phenomenon. 2 layer combined with 0.5cm long polypropylene net fiber chip kept the greater work than 1 layer. The polypropylene combined board superior to nylon -and plastic non - combined board seemed to have greater anti - failing capacity. 5. Internal bond strength(IB), in contrast to MOR's tendency. showed in the order of T1

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.45-48
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• 2003

BiSrCaCuO thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.281-283
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• 2001

$Bi_{2}Sr_{2}CuO_{x}$(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion bearn sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition. two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit. then three dimensional growth takes place. Since Cu element is the most difficult to oxidize. only Sr and Bi react with each other predominantly. and forms a buffer layer on the substrate in an amorphous-like structure. which is changed to $SrBi_{2}O_{4}$ by in-situ anneal.