• 한국진공학회지
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• 제16권2호
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• pp.79-90
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• 2007

저에너지 초고속 표면 처기 이온원, 4개의 마그네트론 스퍼터 캐소드가 부착된 300 mm 폭 다목적 연성 기판 제작을 위한 부피 800 L 용량의 진공 웹코터 원형 (prototype) 장비를 설계 제작하였고, 무접착제 2층 연성 동박 적층 필림을 제작하여 성능을 평가하였다. 2 개의 터보 펌프 및 폴리콜드를 장착한 비코팅 부분인 상실부와 각각 1개씩의 터보 펌프를 사용한 표면 처리 및 코팅 부분인 하실부의 진공 배기 특성을 측정하였다. 패러데이 컵을 사용하여 대면적 이온원의 이온 전류 밀도 및 균일도를 측정하고, 스퍼터 캐소드의 자기장 분포 및 타겟 사용 효율을 조사하였다. 진공 웹코터의 성능 및 각 구성 요소의 특성 조사를 위하여 연성 기판으로는 폴리이미드 (Kapton-E) $38{\mu}m$을 사용하여 여러 가지 가스 이온에 대한표면 처리 조건에 따른 증류수의 접촉각 변화와 화학 성분의 변화를 x-선 분광학을 사용하여 조사하였다. 고밀도 2층 연성 동박 적층 필림 기판을 스퍼터-전기 도금법으로 제작하기 위하여 스퍼터 타겟으로는 Ni-Cr 및 Cu 금속을 사용하여, 각각의 증착율을 직류 전력의 변화 및 롤의 속도에 따라 조사하였고, 전기 도금으로 $9{mu}m$ 까지 동박 적층 필림을 제작한 후 접착력 및 내열성, 내화학성을 측정하여 소형 진공 웹 코터의 특성을 조사하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• 전자공학회논문지D
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• 제36D권7호
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• pp.17-25
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• 1999

PECVD 법을 이용하여 Tungsten Nitride($WN_x$) 박막을 $WSi_3N_4$ 기판위에 형성하였다. $WN_x$ 박막은 기관온도, 가스의 유량, rf power 등의 공정변수를 변화시키면서 형성되었고, 서로 다른 질소원으로 $NH_3$와 $N_2$를 각각 사용하여 박막의 특성을 조사하였다. $WN_x$ 막 내의 질소함량은 $NH_3$와 $N_2$의 유량에 따라 0~45% 정도로 변화하였으며, $NH_3$를 사용하였을 때, 최고 160nm/min의 높은 성장률을 나타내었다. $WSi_3N_4$ 기판 위에서는 TiN이나 Si 위에서보다 높은 성장률을 나타내었다. $WN_x$ 박막의 순도를 AES로 측정해 본 결과 $NH_3$를 사용했을 때 고순도의 박막을 얻을 수 있었다. XRD 분석으로 순수한 다결정의 W가 비정질의 $WN_x$로 변화되는 것을 알 수 있었으며, 이것은 $WN_x$가 식각 공정시 미세 패턴 형성이 W보다 유리할 것이라는 것을 보여준다. TiN, NiCr, Al 등의 다양한 기판 위에 형성해 본 결과 Al 위에서 최대 $1.6 {\mu}m$의 두꺼운 막이 형성되었다.

• 한국산학기술학회논문지
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• 제15권9호
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• pp.5758-5762
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• 2014

정전기적으로 구동되는 마이크로 소자는 센서 및 엑츄에이터 산업 분야에서 널리 활용되고 있다. 정전기적으로 구동되는 마이크로 소자 구조체는 수 마이크로미터 이하의 전극 사이 간격으로서 정전기적인 부착 현상에 의한 고장이 발생 한다. 본 연구에서는 마이크로 소자의 부착 현상을 개선하기위하여 전극의 길이와 면적을 달리한 마이크로 소자의 구조체를 제작하고, 원자 층 증착방법에 의한 알루미나 코팅 전과 후의 마이크로 소자의 풀인 전압(pull-in voltage)을 측정 비교 분석 하였다. 마이크로 소자의 상부 전극 길이 변화에서는 알루미나 코팅 후에 풀인 전압의 상승이 관찰되었고 전극면적이 클수록 풀인 전압 상승이 관찰되었다. 정전기적으로 구동되는 마이크로 소자의 부착 현상을 개선하기위한 방안으로 본 연구에서 적용된 알루미나 코팅 방법은 효과적인 방법이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.7-7
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• 2009

Lead telluride (PbTe) is a very promising thermoelectric material due to its narrow band gap (0.31 eV at 300 K), face-centered cubic structure and large average excitonic Bohr radius (46 nm) allowing for strong quantum confinement within a large range of size. In this work, we present the thermoelectric properties of individual single-crystalline PbTe nanowires grown by a vapor transport method. A combination of electron beam lithography and a lift-off process was utilized to fabricate inner micron-scaled Cr (5 nm)/Au (130 nm) electrodes of Rn (resistance of a near electrode), Rf (resistance of a far electrode) and a microheater connecting a PbTe nanowire on the grid of points. A plasma etching system was used to remove an oxide layer from the outer surface of the nanowires before the deposition of inner electrodes. The carrier concentration of the nanowire was estimated to be as high as $3.5{\times}10^{19}\;cm^{-3}$. The Seebeck coefficient of an individual PbTe nanowire with a radius of 68 nm was measured to be $S=-72{\mu}V/K$ at room temperature, which is about three times that of bulk PbTe at the same carrier concentration. Our results suggest that PbTe nanowires can be used for high-efficiency thermoelectric devices.

• 멤브레인
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• 제22권6호
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• pp.424-434
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• 2012

본 연구에서는 CVD법으로 세라믹 막을 제조하였다. 튜브의 ${\alpha}-Al_2O_3$ 지지체 위에 Ga 염이 첨가된 ${\gamma}-Al_2O_3$를 코팅하였고, 실란화합물인 tetramethylorthosilane (TMOS) 를 $650^{\circ}C$에서 화학적 기상 증착법으로 막에 증착하였다. 제조된 세라믹 막을 사용하여 수소, 질소, 이산화탄소, 메탄의 단일조성 기체투과 실험을 $600^{\circ}C$에서 시행하였다. Ga 염 비첨가 시, $600^{\circ}C$ 수분 처리 실험의 $H_2/N_2$ 선택도가 926에서 829로 감소한 반면, Ga 염 첨가 시에는 910에서 904로 안정하였다. 이 결과를 통해, 막에 금속염을 첨가하여 제조한 막이 수분 안정성을 향상시킴을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.176-176
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• 2007

Flat-panel direct conversion detectors used in compound substance of semiconductor are being studied for digital x-ray imaging. Recently, such detectors are deposited by physical vapor deposition(PVD) generally. But, most of materials (HgI2, PbI2, TlBr, PbO) deposited by PVD have shown difficult fabrication and instability for large area x-ray imaging. Consequently, in this paper, we propose applicable potentialities for screen printing method that is coated on a substrate easily. It is compared to electrical properties among semiconductors such as $HgI_2$, $PbI_2$, PbO, HgBrI, InI, and $TlPbI_3$ under investigation for direct conversion detectors. Each film detector consists of an ~25 to $35\;{\mu}m$ thick layer of semiconductor and was coated onto the substrate. Substrates of $2cm{\times}2cm$ have been used to evaluate performance of semiconductor radiation detectors. Dark current, sensitivity and physics properties were measured. Leakage current of $HgI_2$ as low as $9pA/mm^2$ at the operation bias voltage of ${\sim}1V/{\mu}m$ was observed. Such a value is not better than PVD process, but it is easy to be fabricated in high quality for large area x-ray Imaging. Our future efforts will concentrate on optimization of growth of film thickness that is coated onto a-Si TFT array.

• 한국재료학회지
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• 제29권8호
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• pp.463-468
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• 2019

The electrical and interfacial properties of $HfO_2/Al_2O_3$ and $Al_2O_3/HfO_2$ dielectrics on AlN/p-Ge interface prepared by thermal atomic layer deposition are investigated by capacitance-voltage(C-V) and current-voltage(I-V) measurements. In the C-V measurements, humps related to mid-gap states are observed when the ac frequency is below 100 kHz, revealing lower mid-gap states for the $HfO_2/Al_2O_3$ sample. Higher frequency dispersion in the inversion region is observed for the $Al_2O_3/HfO_2$ sample, indicating the presence of slow interface states A higher interface trap density calculated from the high-low frequency method is observed for the $Al_2O_3/HfO_2$ sample. The parallel conductance method, applied to the accumulation region, shows border traps at 0.3~0.32 eV for the $Al_2O_3/HfO_2$ sample, which are not observed for the $Al_2O_3/HfO_2$ sample. I-V measurements show a reduction of leakage current of about three orders of magnitude for the $HfO_2/Al_2O_3$ sample. Using the Fowler-Nordheim emission, the barrier height is calculated and found to be about 1.08 eV for the $HfO_2/Al_2O_3$ sample. Based on these results, it is suggested that $HfO_2/Al_2O_3$ is a better dielectric stack than $Al_2O_3/HfO_2$ on AlN/p-Ge interface.

• Current Photovoltaic Research
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• 제7권4호
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• pp.97-102
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• 2019

Bifacial and semitransparent hydrogenated amorphous silicon (a-Si:H) thin-film solar cells in p-i-n configuration were prepared with front and rear transparent conducting oxide (TCO) electrodes using plasma-enhanced chemical vapor deposition method. Fluorine-doped tin oxide and tin-doped indium oxide films were used as front and rear TCO contacts, respectively. Film thickness of intrinsic a-Si:H absorber layers were controlled from 150 nm to 450 nm by changing deposition time. The dependence of performance characteristics of solar cells on the front and rear illumination direction were investigated. For front illumination, gradual increase in the short-circuit current density (J_SC) from 10.59 mA/㎠ to 14.19 mA/㎠ was obtained, whereas slight decreases from 0.83 V to 0.81 V for the open-circuit voltage (V_OC) and from 68.43% to 65.75% for fill factor (FF) were observed. The average optical transmittance in the wavelength region of 380 ~ 780 nm of the solar cells decreased gradually from 22.76% to 15.67% as the absorber thickness was changed from 150 nm to 450 nm. In case of the solar cells under rear illumination condition, the J_SC increased from 10.81 to 12.64 mA/㎠ and the FF deceased from 66.63% to 61.85%, while the V_OC values were maintained at 0.80 V with increasing the absorber thickness from 150 nm to 450 nm. By optimizing the deposition parameters, a high-quality bifacial and semitransparent a-Si:H solar cell with 350 nm-thick i-a-Si:H absorber layer exhibited the conversion efficiencies of 7.69% for front illumination and 6.40% for rear illumination, and average visible optical transmittance of 17.20%.

• 한국재료학회지
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• 제33권12호
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• pp.525-529
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• 2023

β-Ga₂O₃ has become the focus of considerable attention as an ultra-wide bandgap semiconductor following the successful development of bulk single crystals using the melt growth method. Accordingly, homoepitaxy studies, where the interface between the substrate and the epilayer is not problematic, have become mainstream and many results have been published. However, because the cost of homo-substrates is high, research is still mainly at the laboratory level and has not yet been scaled up to commercialization. To overcome this problem, many researchers are trying to grow high quality Ga₂O₃ epilayers on hetero-substrates. We used diluted SiH4 gas to control the doping concentration during the heteroepitaxial growth of β-Ga₂O₃ on c-plane sapphire using metal organic chemical vapor deposition (MOCVD). Despite the high level of defect density inside the grown β-Ga₂O₃ epilayer due to the aggregation of random rotated domains, the carrier concentration could be controlled from 1 × 10¹⁹ to 1 × 10¹⁶ cm^-3 by diluting the SiH4 gas concentration. This study indicates that β-Ga₂O₃ hetero-epitaxy has similar potential to homo-epitaxy and is expected to accelerate the commercialization of β-Ga₂O₃ applications with the advantage of low substrate cost.