• 한국전기전자재료학회논문지
• /
• 제27권10호
• /
• pp.642-647
• /
• 2014

For feasible study of opto-electrical application regarding to oxide semiconductor, we implemented the N doped ZnO growth using a atomic layer deposition technique. The p-type ZnO deposition, necessary for ZnO-based optoelectronics, has considered to be very difficulty due to sufficiently deep acceptor location and self-compensating process on doping. Various sources of N such as $N_2$, $NH_3$, NO, and $NO_2$ and deposition techniques have been used to fabricate p-type ZnO. Hall measurement showed that p-type ZnO was prepared in condition with low deposition temperature and dopant concentration. From the evaluation of photoluminescence spectroscopy, we could observe defect formation formed by N dopant. In this paper, we exhibited the electrical and optical properties of N-doped ZnO thin films grown by atomic layer deposition with $NH_3OH$ doping source.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.280.2-280.2
• /
• 2016

The graphene, a single atomic sheet of graphite, has attracted tremendous interest owing to its novel properties including high intrinsic mobility, optical transparency and flexibility. However, for more diverse application of graphene devices, it is essential to tune its transport behavior by shifting Dirac Point (DP) of graphene. So, in the following context, we suggest a method to tune structural and electronic properties of graphene using atomic layer deposition. By atomic layer deposition of zinc oxide (ZnO) on graphene using 4-mercaptophenol as linker, we can fabricate n-doped graphene. Through ${\pi}-{\pi}$ stacking between chemically inert graphene and 4-mercaptophenol, conformal deposition of ZnO on graphene was enabled. The electron mobility of graphene TFT increased more than 3 times without considerably decreasing the hole mobility, compared to the pristine graphene. Also, it has high air stability. This ZnO doping method by atomic layer deposition can be applicable to large scale array of CVD graphene TFT.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2007년도 추계학술발표대회 및
• /
• pp.32.1-32.1
• /
• 2007

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2011년도 추계학술대회 초록집
• /
• pp.84.2-84.2
• /
• 2011

In this research, two thin film deposition techniques, Atomic Layer Deposition and Sputtering are carried out for the fabrication of Yittria Stabilized Zirconia electrolyte for thin film Solid Oxide Fuel Cell. Zirconium to Yittrium ratio for both cases is about 1/8. Scanning Electron Microscope(SEM) image shows that the growth rate per hour for Atomic Layer Deposition is faster than for sputtering. X-ray Photo-electron Spectroscopy(XPS) shows that the peaks of both Zirconia and Yittria shift towards higher bending energy for the case of Atomic Layer deposition and thus are more strongly attached to the substrate. Later, Nyquist plot was used to compare the conductivity of Yittria Stabilized Electrolyte for both cases. The conductivity at $300^{\circ}C$ for Atomic Layer Deposited Yittria Stabilized Zirconia is found to be $5{\times}10^{-4}S/cm$ while that for sputtered Yittria Stabilized Zirconia is $2{\times}10^{-5}S/cm$ at the same temperature. The reason for better performance for Atomic Layered YSZ is believed to be the Nano-structured layer fabrication that aids in along the plane conduction as compared to the columnarly structured Sputtered YSZ.

• 반도체디스플레이기술학회지
• /
• 제20권3호
• /
• pp.22-26
• /
• 2021

Thin-film encapsulation (TFE) technology is most effective in preventing water vapor and oxygen permeation in the organic light emitting diodes (OLED). Of those, a laminated structure of Al₂O₃ and MgO were applied to provide efficient barrier performance for increasing the stability of devices in air. Atomic layer deposition (ALD) method is known as the most promising technology for making the laminated Al₂O₃/MgO and is used to realize a thin film encapsulation technology in organic light-emitting diodes. Atomic layer deposited inorganic films have superior barrier performance and have advantages of excellent uniformity over large scales at relatively low deposition temperatures. In this study, the control system of the MgCP₂ precursor for the atomic layer deposition of MgO was established in order to deposit the MgO layer stably by the injection time of second level and the stable heating temperature. The deposition rate was obtained stably to be from 4 to 10 Å/cycle using the injection pulse times ranging from 3 to 12 sec and a substrate temperature ranging from 80 to 150 ℃.

• 한국원자력학회:학술대회논문집
• /
• 한국원자력학회 1997년도 춘계학술발표회논문집(2)
• /
• pp.159-164
• /
• 1997

Pyrolytic carbon layer was coated on A1203 balls by fluidized bed type chemical vapour deposition unit to develop the coating technology for the preparation of coated nuclear fuel. The deposition was carried out at the temperature ranges between 110$0^{\circ}C$ and 130$0^{\circ}C$ with various gas contents and flow rates. Source and carrier gas were propane and argon, respectively. X-ray analysis shows that the deposition layer was typical carbon spectra. The growth rate of carbon layer depended on the amount of source gas and the deposition temperature. For the alumina balls with 2mm in diameter, the deposition rate was 11${\mu}{\textrm}{m}$/hr in the flow gases containing 30% source gas at 130$0^{\circ}C$ with a total flow rate of 2.0$\ell$/min. Microstructural observation of the deposits with scanning electron microscope revealed that the deposits had relatively dense and isotropic structure. Chemical analysis by energy dispersive spectroscopy showed that the layer was pure carbon.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.259-260
• /
• 2006

$Bi_2Sr_2Ca_{n-1}Cu_nO_x$ superconducting thin films have been fabricated by atomic layer-by-layer deposition using IBS(Ion Beam Sputtering) method During the deposition, 90 mol% ozone gas of typical pressure of $1{\sim}9{\times}10^{-5}$ T orr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

• 한국세라믹학회지
• /
• 제26권3호
• /
• pp.323-330
• /
• 1989

Wear restance titanium carbonitride (TiCN) films were deposited on the SKH9 tool steels and WC-Co cutting tools by plasma assisted chemical vapor deposition (PACVD) using a gaseous mixture of TiCl4, CH4, N2, H2 and Ar. The effects of the deposition temperature and RF(Radio Frequency) power on the deposition rate, chlorine content and crystallinity of the deposited layer were studied. The experimental results showed that the stable and adherent films could be obtained above the deposition temperature of 47$0^{\circ}C$ and maximum deposition rate was obtained at 485$^{\circ}C$. The deposition rate was much affected by RF power and maximum at 40W. The crystallinity of the deposited layer was improved with increasing the deposition temperature and RF power. The TiCN films deposited by PACVD contained much chlorine. The chlorine content in the TiCN films was affected by deposition conditions and decreased with improving the crystallinity of the deposited layer. The deposited TiCN films deposited at the deposition temperature of 52$0^{\circ}C$ and RF power of 40W had an uniform surface with very fine grains of about 500$\AA$ size. The microhardness of the deposited layer was 2,300Kg/$\textrm{mm}^2$.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.312.1-312.1
• /
• 2016

We have deposited ZnO thin films by ultraviolet (UV) enhanced atomic layer deposition using diethylznic (DEZ) and water (H2O) as precursors with UV light. The atomic layer deposition relies on alternating dose of the precursor on the surface and subsequent chemisorption of the precursors with self-limiting growth mechanism. Though ALD is useful to deposition conformal and precise thin film, the surface reactions of the atomic layer deposition are not completed at low temperature in many cases. In this experiment, we focused on the effects of UV radiation during the ALD process on the properties of the inorganic thin films. The surface reactions were found to be complementary enough to yield uniform inorganic thin films and fully react between DEZ and H2O at the low temperature by using UV irradiation. The UV light was effective to obtain conductive ZnO film. And the stability of TFT with UV-enhanced ZnO was improved than ZnO by thermal ALD method. High conductive UV-enhanced ZnO film have the potential to applicability of the transparent electrode.

• 한국분말재료학회지
• /
• 제21권6호
• /
• pp.434-440
• /
• 2014

Silicon carbide(SiC) layer is particularly important tri-isotropic (TRISO) coating layers because it acts as a miniature pressure vessel and a diffusion barrier to gaseous and metallic fission products in the TRISO coated particle. The high temperature deposition of SiC layer normally performed at $1500-1650^{\circ}C$ has a negative effect on the property of IPyC layer by increasing its anisotropy. To investigate the feasibility of lower temperature SiC deposition, the influence of deposition temperature on the property of SiC layer are examined in this study. While the SiC layer coated at $1500^{\circ}C$ obtains nearly stoichiometric composition, the composition of the SiC layer coated at $1300-1400^{\circ}C$ shows discrepancy from stoichiometric ratio(1:1). $3-7{\mu}m$ grain size of SiC layer coated at $1500^{\circ}C$ is decreased to sub-micrometer (< $1{\mu}m$) $-2{\mu}m$ grain size when coated at $1400^{\circ}C$, and further decreased to nano grain size when coated at $1300-1350^{\circ}C$. Moreover, the high density of SiC layer (${\geq}3.19g/cm^3$) which is easily obtained at $1500^{\circ}C$ coating is difficult to achieve at lower temperature owing to nano size pores. the density is remarkably decreased with decreasing SiC deposition temperature.