• Applied Science and Convergence Technology
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• v.24 no.4
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• pp.117-124
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• 2015

A direct growth method of graphene on insulating substrate without catalyst etching and transfer process was developed using Au/Ni/a-C catalyst system. During the growth process, behavior of the Au/Ni catalyst was investigated using EDX, XPS, SEM, and Raman spectroscopy. The Au/Ni catalyst layer was evaporated during growth process of graphene. The graphene film was composed mono-layer flakes. The transmittance of the graphene film was ~80.6%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.212-217
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• 2000

Bi$_2$Sr$_2$CuO$_{x}$(Bi-2201) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering(IBS) process. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of 5.0$\times$10$^{-5}$ Torr is supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi-2201 is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.n.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.41-41
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• 2009

We utilized atomic layer deposition (ALD) for the growth of the ZnO channel layers in the oxide thin-film-transistors (TFTs) with a bottom-gate structure using a $SiO_2/p-Si$ substrate. For fundamental study, the effect of the channel thickness and thermal treatment on the TFT performance was investigated. The growth modes for the ALD grown ZnO layer changed from island growth to layer-by-layer growth at thicknesses of > 7.5 nm with highly resistive properties. A channel thickness of 17 nm resulted in the good TFT behavior with an onloff current ratio of > $10^6$ and a field effect mobility of 2.9 without the need for thermal annealing. However, further increases in the channel thickness resulted in a deterioration of the TFT performance or no saturation. The ALD grown ZnO layers showed reduced electrical resistivity and carrier density after thermal treatment in oxygen.

• Proceedings of the Korea Society of Environmental Biology Conference
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• 2004.05a
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• pp.25-25
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• 2004

We studied algal growth-related water quality of the Dongbok lake which is the drinking water reservoir for the Gwangju municipality. Peridinium cinctum and several diatomic algal species frequently caused water bloom throughout the lake from early spring to late autumn. With the heaviest predominance of Peridinium cintum in May 2003, COD was 13.7 mg/I in the surface layer. Highly turbid surface water with 46.8 mg/I of SS was also caused by Perdinium bloom. Peridinium bloom decisively eliminated cyanobacterial growth in the lake, otherwise cyanobacterial bloom resulted. Dense algal layer was confined in the upper several meters of the water column above the thermocline, which gives relatively algae-free water in deeper layer suitable for drinking source water supply. Upon collapse of thermocline, water quality of the surface layer was improved while deeper layer was deteriorated in terms of water quality. This paper deals with some details of water quality changes with algal growth in the Dongbok lake past two years.

• Journal of the Korean institute of surface engineering
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• v.30 no.2
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• pp.111-120
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• 1997

The growth kinetion of $CuCl_x$ layer on Cu was investigated using $Cl_2$ gas with/without plasma. The etching kinetics ofit was also studied, in which PEt3 gas as well as $Cl_2$ gas were used. when plasma and DC bias were applied, not only the growth rate of $CuCl_x$ layer but also the surface concentration of Cl in $CuCl_x$ layer drastically increased. The growth mode is divided into three regimes, where the thinkness $CuCl_x$ layer ise proportional to t, lo9g $T^{1/2}$ , respectively, whether plasma, is applied or not. These three regime. It is also identified that the eath rate of Cu is drastically increased as the $Cl_2$ pressure is increased. However, when plasma and DC bias were applied, the etching rate is decreased, and ClCu-P-U layer is formed. in addition, as the etching time is increased, the surface concentration of Cl is increased and $CuCl_2$ formed partially.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.11-14
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• 2012

The AlGaN layer has direct wide bandgaps ranging from 3.4 to 6.2 eV. Nowadays, it is becoming more important to fabricate optical devices in an UV region for the many applications. The high quality AlGaN layer is necessary to establish the UV optical devices. However, the growth of AlGaN layer on GaN layer is difficult due to the lattice mismatch and difference thermal expansion coefficient between GaN layer and AlGaN layer. In this paper, we attempted to grow the LED structure on GaN template by mixed-source HVPE method with multi-sliding boat system. We tried to find the optical and lattice transition of active layer by control the Al content in mixed-source. For the growth of epi layer, the HCl and $NH_3$ gas were flowed over the mixed-source and the carrier gas was $N_2$. The temperature of source zone and growth zone was stabled at 900 and $1090^{\circ}C$, respectively. After the growth, we performed the x-ray diffraction (XRD) and electro luminescence (EL) measurement.

• Journal of Powder Materials
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• v.23 no.4
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• pp.270-275
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• 2016

We report on an all-solution-processed hydrothermal method to control the morphology of ZnO nanostructures on Si substrates from three-dimensional hemispherical structures to two-dimensional thin film layers, by controlling the seed layer and the molar contents of surfactants during their primary growth. The size and the density of the seed layer, which is composed of ZnO nanodots, change with variation in the solute concentration. The ZnO nanodots act as heterogeneous nucleation sites for the main ZnO nanostructures. When the seed layer concentration is increased, the ZnO nanostructures change from a hemispherical shape to a thin film structure, formed by densely packed ZnO hemispheres. In addition, the morphology of the ZnO layer is systematically controlled by using trisodium citrate, which acts as a surfactant to enhance the lateral growth of ZnO crystals rather than a preferential one-dimensional growth along the c-direction. X-ray diffraction and energy dispersive X-ray spectroscopy results reveal that the ZnO structure is wurtzite and did not incorporate any impurities from the surfactants used in this study.

• Journal of Welding and Joining
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• v.20 no.1
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• pp.97-102
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• 2002

The growth kinetics of intermetallic compound layers formed between the eutectic Sn-3.5Ag solder and the Cu and Ni/Cu pad by solid stateisothermal aging were examined. The interfacial reaction between the eutectic Sn-3.5Ag solder and the Cu and Ni/Cu pad was investigated at 70, 120, 150, $170^{\circ}C$ for various times. The intermetallic compound layer was composed of two phase: $Cu_6Sn_5$(${\varepsilon}-phase$) adjacent to the solder and $Cu_6Sn_5$(${\varepsilon}-phase$) adjacent to the copper and on solder/Ni pad the intermetallic compound layer was $Ni_3Sn_4$. Because the values of time exponent(n) have approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range studied. The apparent activation energy for layer growth of total Cu-Sn($Cu_6Sn_5 + Cu_6Sn$), $Cu_6Sn_5$, $Cu_3Sn$ and $Ni_3Sn_4$ intermetallic compound were 64.82kJ/mol, 48.53kJ/mol, 89.06kJ/mol and 71.08kJ/mol, respectively.

• Journal of the Korean Society of Industry Convergence
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• v.7 no.4
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• pp.349-354
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• 2004

The growth mode of the Si layers which were grown on Si(111) by using Ag as surfactant were investigated by intensity oscillations of the RHEED specular spot at the different temperatures. we found that the introduction of Ag as the surfactant alters the growth mode from a three-dimensional clustering mechanism to a two-dimensional layer-by-layer growth. In the growth of Si layers on Si(111) with a surfactant Ag, At $450^{\circ}C$, RHEED intensity oscillation was very stable and periodic from early stage of deposition to 32 ML. RHEED patterns during homoepitaxial growth at $450^{\circ}C$ was changed from $7{\times}7$ structure into ${\sqrt{3}}{\times}{\sqrt{3}}$ structures. Since the ${\sqrt{3}}{\times}{\sqrt{3}}$ structure include no stacking fault, the stacking fault layer seems to be reconstructed into normal stacking one at transition from the $7{\times}7$ structure to a ${\sqrt{3}}{\times}{\sqrt{3}}$ one. We also found that the number of the intensity oscillation of the specular spot for Si growth with a surfactant Ag was more than for Si growth without a surfactant. This result may be explained that the activation energy decrease for the surface diffusion of Si atoms due to segregation of the surfactant toward the growing surface.

• Carbon letters
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• v.14 no.4
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• pp.228-233
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• 2013

In this work, we report in-situ observations of changes in catalyst morphology, and of growth termination of individual carbon nanotubes (CNTs), by complete loss of the catalyst particle attached to it. The observations strongly support the growth-termination mechanism of CNT forests or carpets by dynamic morphological evolution of catalyst particles induced by Ostwald ripening, and sub-surface diffusion. We show that in the tip-growth mode, as well as in the base-growth mode, the growth termination of CNT by dissolution of catalyst particles is plausible. This may allow the growth termination mechanism by evolution of catalyst morphology to be applicable to not only CNT forest growth, but also to other growth methods (for example, floating-catalyst chemical vapor deposition), which do not use any supporting layer or substrate beneath a catalyst layer.