• Proceedings of the KSME Conference
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• 2003.11a
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• pp.67-72
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• 2003

Numerical calculation has been performed to investigate the effect of inlet configuration on the growth rate of GaN layer on the heated susceptor. The conventional single inlet, where the gas is mixed by force in the inlet, is compared with separated flow inlet. Two-parallel gas flow $H_{2}$ and $NH_{3}$ are separated by a plate with finite length which are also parallel to the susceptor. The effect of separated plate length, carrier gas and flow rate of each precursor on the mixing of reactant gases and growth rate were investigated. Furthermore the three dimensional model is employed to predict the transverse variation of growth rate.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.21-26
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• 2004

Deposition condition of YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) films on moving IBAD templates (CeO$_2$/IBAD-YSZ/SS) was studied in a hot-wall type metal organic chemical vapor deposition (MOCVD) process using single liquid source. The reel velocity was 40 cm/hr and the source mole ratios of Y(tmhd)$_3$:Ba(tmhd)$_2$:Cu(tmhd)$_2$ were 1:2.3:3.1 and 1:2.1:2,9, Two different types of IBAD templates with thin CeO$_2$ and thick CeO$_2$ layers were used, The YBCO films were successfully deposited at the deposition temperatures of 780~89$0^{\circ}C$ ; the a-axis growth was observed together with the c-axis growth up to 83$0^{\circ}C$. while the c-axis growth became dominant above 83$0^{\circ}C$. The top surface of the c-axis film was fairly dense and included a small amount of the a-axis growth, although the peaks of the a-axis grains were not observed in XRD pattern, The YBCO film deposited on IBAD template with thin CeO$_2$ layer showed low critical current of 2.5 A/cm-width. while the YBCO film deposited on IBAD template with thick CeO$_2$ layer showed higher critical current of 50 A/cm-width. This result indicates that thick CeO$_2$ layer is thermally more stable than thin CeO$_2$ layer at the high deposition temperature of the MOCVD process.s.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.4
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• pp.151-157
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• 2014

The degradation mechanisms of thermal barrier coatings (TBCs) were investigated in different thermal fatigue condition in terms of microstructural analyses. The isothermal and cyclic oxidation tests were conducted to atmospheric plasma sprayed-TBCs on NIMONIC 263 substrates. The delamination occurred by the oxide layer formation at the interface, the Ni/Cr-based oxide was formed after Al-based oxide layer grew up to ${\sim}10{\mu}m$ in the isothermal condition. In the cyclic oxidation with dwell time, the failure occurred earlier (500 hr) than in the isothermal oxidation (900 hr) at same temperature. The thickness of Al-based oxide layer of the delaminated specimen in the cyclic condition was ${\sim}4{\mu}m$ and the interfacial cracks were observed. The acoustic emission method revealed that the cracks generated during the cooling step. It was considered that the specimens were prevented from the formation of the Al-based oxide by cooling treatment, and the degradation mode in the cyclic test was dominantly interfacial cracking by the difference of thermal expansion coefficients of the coating layers.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.2067_2068
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• 2009

Resistivity changes and intermetallic growth after thermal aging of Matter tin-plated copper sheet for current collector in fuel cell were investigated to survey the diffusion of Cu into Sn in interface and surface. The results show that the intermetallic growth and resistivity depended on thermal aging temperature and dwell time. In Sn plate on a Cu substrate, $Cu_6Sn_5({\mu})$ and $Cu_3Sn({\varepsilon})$ intermetallics layer were formed at plate/substrate interface. $Cu_6Sn_5({\mu})$ intermetallics layer gradually changed $Cu_3Sn({\varepsilon})$. Moreover Cu get through Sn layer and it was diffused in the surface at $200^{\circ}C$. On the other hand, only $Cu_3Sn({\varepsilon})$ intermetallics layer were formed at plate/substrate interface at $300^{\circ}C$. Consequently, the intermetallics formation, thermal condition and oxidation of surface, causes increase in the resistivity of Tin-plated copper sheet.

• Journal of The Korean Society of Agricultural Engineers
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• v.52 no.2
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• pp.35-42
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• 2010

In this paper, we propose a ubiquitous Farming Diary System which can support the easy and reliable recording of a farming diary for the certificate on environment-friendly agricultural products by using the USN(Ubiquitous Sensor Network) technologies. By using growth-related data, the system can also control farming facilities remotely and automatically. To achieve this goal, the UFDS(Ubiquitous Farming Diary System) is consisted with 3 layers. The first 'physical layer' can collect data from sensors, cameras and facilities then controls the growth environment based on the analyzed information. The second 'Middle layer' can process and store the data from 'physical layer' to sensor manager, image manager, control manager and diary manager separately. The third 'application layer' can provide growth-related services to users through various applications. The UFDS can recording grow history information automatically and Easily. Besides, the system can make an accurate and reliable farming diary with multimedia information such as motion and sound. Furthermore, environmental information such as temperature, humidity, luminance and soil conditions (soil temperature, soil humidity, soil EC) can be monitored in real-time and the facilities managed in remote sites.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.232-232
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• 2006

SiC single crystal Ingots were prepared onto different seed material using sublimation PVT techniques and then their crystal quality was systematically compared. In this study, the conventional SiC seed material and the new SiC seed material with an inserted SiC epitaxial layer on a seed surface were used as a seed for SiC bulk growth. The inserted epitaxial layer was grown by a sublimation epitaxy method called the CST with a low growth rate of $2{\mu}m/h$ N-type 2"-SIC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated and carrier concentration levels of below $10^{17}/cm^3$ were determined from the absorption spectrum and Hall measurements. The slightly higher growth rate and carrier concentration were obtained in SiC single crystal Ingot grown on new SiC Seed materials with the inserted epitaxial layer on the seed surface, maintaining the high quality.

• Nuclear Engineering and Technology
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• v.40 no.5
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• pp.409-418
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• 2008

Because the interaction layers that form between U-Mo particles and the Al matrix degrade the thermal properties of U-Mo/Al dispersion fuel, an investigation was undertaken of the undesirable feedback effect between an interaction layer growth and a centerline temperature increase for dispersion fuel. The radial temperature distribution due to interaction layer growth during irradiation was calculated iteratively in relation to changes in the volume fractions, the thermal conductivities of the constituents, and the oxide thickness with the burnup. The interaction layer growth, which is estimated on the basis of the temperature calculations, showed a reasonable agreement with the post-irradiation examination results of the U-Mo/Al dispersion fuel rods irradiated at the HANARO reactor. The U-Mo particle size was found to be a dominant factor that determined the fuel temperature during irradiation. Dispersion fuel with larger U-Mo particles revealed lower levels of both the interaction layer formation and the fuel temperature increase. The results confirm that the use of large U-Mo particles appears to be an effective way of mitigating the thermal degradation of U-Mo/Al dispersion fuel.

• Korean Journal of Materials Research
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• v.15 no.11
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• pp.741-744
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• 2005

Atomic layer deposition (ALD) is a very promising deposition technique for ZnO thin films. However, there have been very few reports on ZnO grown by ALD. Effects of substrate temperature in both ALD and post annealing on the microstructure and PL properties of ZnO thin films were investigated using X-ray diffraction, photoluminescence, and scanning electron microscopy. The temperature window of ALD is found to be between $130-180^{\circ}C$. The growth rate of ZnO thin film increases as the substrate temperature increases in the temperature range except the temperature window. The crystal quality depends most strongly on the substrate temperature among all the growth parameters of ALD. The crystallinity of the film is improved by increasing the growth thine per ALD cycle or doing post-annealing treatment. The grain size of the film tends to increase and the grain shape tends to change from a worm-like longish shape to a round one as the annealing temperature increases from $600^{\circ}C\;to\;1,000^{\circ}C$.

• Journal of the Korean Institute of Landscape Architecture
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• v.38 no.3
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• pp.107-114
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• 2010

This study was undertaken to suggest a Pinus densiflora community planting model in the central cool temperate zone of Korea and nearby areas. For the purpose of this study, we surveyed various DBH classes of the P. densiflora community in Dangjin-gun, Choongchungnam-do. We surveyed the size of entire individuals in the 92 plots as well as surveyed the location of individuals in each tree layer and sub-tree layer(1/100 scale) of 44 plots using a quadrant method from young to old communities. As a result of analysis, the tree layer was growing well but the basal areas of the subtree layer were less than 10% compared with the tree-layer. This indicates the subtree layer is not in general growing well in the P. densiflora community. There were no significant patterns in the shrub layer. A P. densiflora community planting would consist of a tree layer and a shrub layer and the finding of growth patterns of the tree layer is significant. In order to make a model of the shrub layer, an additionally survey of another shrub layer is needed in a nearby planting area. Both regression models, 1) between tree layer DBHs and individuals per unit area, and 2) between individuals per unit area and shortest distances of individuals, can yield much information through study.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2002.05a
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• pp.203-206
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• 2002

The present study proposes a theoretical model for predicting the matrix crack density growth of each layer in composite laminates subjected to thermo-mechanical loads. Each layer with matrix cracks is treated as an equivalent continuum of degraded elastic stiffnesses which are functions of the matrix crack density in each slyer. The energy release rate as a function of the degraded elastic stiffnesses is then calculated for each layer as functions of thermo-mechanical loads externally applied to the laminate. The matrix crack densities of each layer in general laminates are predicted as functions of the thermo-mechanical loads applied to a number of laminates. Comparisons of the present study with experimental data in the open literatures are also provided.