Proceedings of the KSME Conference (대한기계학회:학술대회논문집)
- 2003.11a
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- Pages.67-72
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- 2003
Effect of inlet configuration on the growth rate of GaN layer in a MOCVD reactor
MOCVD 반응로내 GaN 성장에 미치는 입구형상의 영향
Abstract
Numerical calculation has been performed to investigate the effect of inlet configuration on the growth rate of GaN layer on the heated susceptor. The conventional single inlet, where the gas is mixed by force in the inlet, is compared with separated flow inlet. Two-parallel gas flow