대한기계학회:학술대회논문집 (Proceedings of the KSME Conference)

대한기계학회 (The Korean Society of Mechanical Engineers)
권호 표지

MOCVD 반응로내 GaN 성장에 미치는 입구형상의 영향

Effect of inlet configuration on the growth rate of GaN layer in a MOCVD reactor

  • 윤성규 (전북대학교 대학원 정밀기계공학과) ;
  • 백병준 (전북대학교 기계항공 시스템공학부 자동차 신기술 연구센터) ;
  • 박복춘 (전북대학교 기계항공 시스템공학부 자동차 신기술 연구센터)
  • 발행 : 2003.11.05
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Numerical calculation has been performed to investigate the effect of inlet configuration on the growth rate of GaN layer on the heated susceptor. The conventional single inlet, where the gas is mixed by force in the inlet, is compared with separated flow inlet. Two-parallel gas flow $H_{2}$ and $NH_{3}$ are separated by a plate with finite length which are also parallel to the susceptor. The effect of separated plate length, carrier gas and flow rate of each precursor on the mixing of reactant gases and growth rate were investigated. Furthermore the three dimensional model is employed to predict the transverse variation of growth rate.

키워드