• Title/Summary/Keyword: Layer Channel

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Study on Effect of the printing direction and layer thickness for micro-fluidic chip fabrication via SLA 3D printing (적층 방식 3차원 프린팅에 의한 미세유로 칩 제작 공정에서 프린팅 방향 및 적층 두께의 영향에 관한 연구)

  • Jin, Jae-Ho;Kwon, Da-in;Oh, Jae-Hwan;Kang, Do-Hyun;Kim, Kwanoh;Yoon, Jae-Sung;Yoo, Yeong-Eun
    • Design & Manufacturing
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    • v.16 no.3
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    • pp.58-65
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    • 2022
  • Micro-fluidic chip has been fabricated by lithography process on silicon or glass wafer, casting using PDMS, injection molding of thermoplastics or 3D printing, etc. Among these processes, 3D printing can fabricate micro-fluidic chip directly from the design without master or template for fluidic channel fabricated previously. Due to this direct printing, 3D printing provides very fast and economical method for prototyping micro-fluidic chip comparing to conventional fabrication process such as lithography, PDMS casting or injection molding. Although 3D printing is now used more extensively due to this fast and cheap process done automatically by single printing machine, there are some issues on accuracy or surface characteristics, etc. The accuracy of the shape and size of the micro-channel is limited by the resolution of the printing and printing direction or layering direction in case of SLM type of 3D printing using UV curable resin. In this study, the printing direction and thickness of each printing layer are investigated to see the effect on the size, shape and surface of the micro-channel. A set of micro-channels with different size was designed and arrayed orthogonal. Micro-fluidic chips are 3D printed in different directions to the micro-channel, orthogonal, parallel, or skewed. The shape of the cross-section of the micro-channel and the surface of the micro-channel are photographed using optical microscopy. From a series of experiments, an optimal printing direction and process conditions are investigated for 3D printing of micro-fluidic chip.

Overall Conversion Efficiency for Dimethylsulfide to Sulfur Dioxide in the Marine Boundary Layer-An Overview

  • Shon, Zang-Ho
    • Journal of Korean Society for Atmospheric Environment
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    • v.18 no.E2
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    • pp.107-120
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    • 2002
  • Dimethyl sulfide (DMS) is the major sulfur gas released from the ocean. The atmospheric DMS released from the ocean is oxidized mainly by hydroxyl (OH) radical during the day and nitrate (NO$_3$) radical at night to form sulfur dioxide (SO$_2$) as well as other stable products. The oxidation mechanism of DMS via OH has been known to proceed by two channels; abstraction and addition channels. The major intermediate product of the addition channel has been known to be dimethylsulfoxide (DMSO) based on laboratory chamber studies and field experiments. However, a branching ratio for DMSO formation is still uncertain. The reaction of DMSO with OH ultimately produces SO$_2$and dimethylsulfone. The major product of the abstraction channel has known to be SO$_2$from laboratory chamber studies. But overall conversion efficiency for DMS to SO$_2$from DMS oxidation is still inconsistent in the literature. Based on laboratory and field studies, the conversion efficiency from the abstraction channel is likely to be greater than 0.5, while that from the addition channel is likely to be greater than 0.6. Overall conversion efficiency from DMS to SO$_2$might be greater than 0.5 based on the above two values in the remote marine boundary layer (MBL). This high efficiency in the remote MBL is supported by strong coupling between DMS and SO$_2$measurements with high temporal resolution.

Exploiting Correlation Characteristics to Detect Covert digital communication

  • Huang, Shuhua;Liu, Weiwei;Liu, Guangjie;Dai, Yuewei;Tian, Wen
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.14 no.8
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    • pp.3550-3566
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    • 2020
  • As a widely used way to exfiltrate information, wireless covert channel (WCC) brings a serious threat to communication security, which enables the wireless communication process to bypass the authorized access control mechanism to disclose information. Unlike the covert channel on the network layer, wireless covert channels on the physical layer (WCC-P) is a new covert communication mode to implement and improve covert wireless communication. Existing WCC-P scheme modulates the secret message bits into the Gaussian noise, which is also called covert digital communication system based on the joint normal distribution (CJND). Finding the existence of this type of covert channel remains a challenging work due to its high undetectability. In this paper, we exploit the square autocorrelation coefficient (SAC) characteristic of the CJND signal to distinguish the covert communication from legitimate communication. We study the sharp increase of the SAC value when the offset is equal to the symbol length, which is caused by embedding secret information. Then, the SAC value of the measured sample is compared with the threshold value to determine whether the measured sample is CJND sample. When the signal-to-noise ratio reaches 20db, the detection accuracy can reach more than 90%.

A New Two-Dimensional Model for the Drain-Induced Barrier Lowering of Fully Depleted Short-Channel SOI-MESFET's

  • Jit, S.;Pandey, Prashant;Pal, B.B.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.3 no.4
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    • pp.217-222
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    • 2003
  • A new two-dimensional analytical model for the potential distribution and drain-induced barrier lowering (DIBL) effect of fully depleted short-channel Silicon-on-insulator (SOI)-MESFET's has been presented in this paper. The two dimensional potential distribution functions in the active layer of the device is approximated as a simple parabolic function and the two-dimensional Poisson's equation has been solved with suitable boundary conditions to obtain the bottom potential at the Si/oxide layer interface. It is observed that for the SOI-MESFET's, as the gate-length is decreased below a certain limit, the bottom potential is increased and thus the channel barrier between the drain and source is reduced. The similar effect may also be observed by increasing the drain-source voltage if the device is operated in the near threshold or sub-threshold region. This is an electrostatic effect known as the drain-induced barrier lowering (DIBL) in the short-gate SOI-MESFET's. The model has been verified by comparing the results with that of the simulated one obtained by solving the 2-D Poisson's equation numerically by using the pde toolbox of the widely used software MATLAB.

A Practical Physical-Layer Network Coding for Fading Channels

  • Jung, Bang-Chul
    • Journal of information and communication convergence engineering
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    • v.8 no.6
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    • pp.655-659
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    • 2010
  • In the conventional PNC scheme, the relay node requires simultaneous transmission of two source nodes with strict power control and carrier-phase matching between two received symbols. However, this pre-equalization process at source nodes is not practical in fading channels. In this letter, we propose a novel physical-layer network coding (PNC) scheme with log-likelihood ratio (LLR) conversion for fading channels, which utilizes not pre-equalizer at transmitters (source nodes) but joint detector at receiver (relay node). The proposed PNC requires only channel side information at the receiver (CSIR), which is far more practical assumption in fading channels. In addition, the proposed PNC scheme can use the conventional modulation scheme like M-QAM regardless of modulation order, while the conventional PNC scheme requires reconfiguration of modulation scheme at the source nodes for detection of the received signal at relay node. We consider the combination of the proposed PNC and channel coding, and find that the proposed PNC scheme is easily combined the linear channel codes such as turbo codes, LDPC, and convolutional codes.

Strained-SiGe Complementary MOSFETs Adopting Different Thicknesses of Silicon Cap Layers for Low Power and High Performance Applications

  • Mheen, Bong-Ki;Song, Young-Joo;Kang, Jin-Young;Hong, Song-Cheol
    • ETRI Journal
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    • v.27 no.4
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    • pp.439-445
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    • 2005
  • We introduce a strained-SiGe technology adopting different thicknesses of Si cap layers towards low power and high performance CMOS applications. By simply adopting 3 and 7 nm thick Si-cap layers in n-channel and p-channel MOSFETs, respectively, the transconductances and driving currents of both devices were enhanced by 7 to 37% and 6 to 72%. These improvements seemed responsible for the formation of a lightly doped retrograde high-electron-mobility Si surface channel in nMOSFETs and a compressively strained high-hole-mobility $Si_{0.8}Ge_{0.2}$ buried channel in pMOSFETs. In addition, the nMOSFET exhibited greatly reduced subthreshold swing values (that is, reduced standby power consumption), and the pMOSFET revealed greatly suppressed 1/f noise and gate-leakage levels. Unlike the conventional strained-Si CMOS employing a relatively thick (typically > 2 ${\mu}m$) $Si_xGe_{1-x}$ relaxed buffer layer, the strained-SiGe CMOS with a very thin (20 nm) $Si_{0.8}Ge_{0.2}$ layer in this study showed a negligible self-heating problem. Consequently, the proposed strained-SiGe CMOS design structure should be a good candidate for low power and high performance digital/analog applications.

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Visualization of Water Droplets in the Simple Flow Channel and Rib Geometry for Polymer Electrolyte Membrane Fuel Cells (PEMFCs) (고분자전해질형 연료전지의 단순 채널 리브 형상에서의 물방울 가시화 연구)

  • Choi, Min Wook;Kim, Han-Sang
    • Transactions of the Korean hydrogen and new energy society
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    • v.25 no.4
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    • pp.386-392
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    • 2014
  • The effective water management in a polymer electrolyte membrane fuel cell (PEMFC) is one of the key strategies for improving cell performance and durability. In this work, an ex situ measurement was carried out to understand the water droplet behavior on the surface of gas diffusion layer (GDL) as a fundamental study for establishing novel water management. For that purpose, simplified cell including one rib and two flow channels was designed and fabricated. Using this ex situ device, the water droplet emergence through the GDL of the PEMFC was emulated to understand liquid water transport through the porous diffusion medium. Through the visualization experiment, the emergence and growth of water droplets at the channel/GDL interface are mainly observed with the surface characteristics of GDL (SGL 10BA, 24BA) and rib when the liquid water passes through the GDL and is expelled to the flow channel. It is expected that the results obtained from this study can contribute to the better understanding on the water droplet behavior (emergence and removal) in the flow channels of PEMFC.

Study on New LIGBT with Multi Gate for High Speed and Improving Latch up Effect (래치 업 특성의 개선과 고속 스위칭 특성을 위한 다중 게이트 구조의 새로운 LIGBT)

  • 강이구;성만영
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.5
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    • pp.371-375
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    • 2000
  • In this paper a new conductivity modulated power transistor called the Lateral Insulated Gated Bipolar Transistor which included n+ ring and p-channel gate is presented. A new lateral IGBT structure is proposed to suppress latch-up and to improve turn off time by imploying n+ ring and p-channel gate and verified by MEDICI. The simulated I-V characteristics at $V_{G}$=15V show that the latch up occurs at $V_{A}$=18V and 6.9$\times$10$^{-5}$ A/${\mu}{\textrm}{m}$ for the proposed LIGBT while the conventional LIGBT latches at $V_{A}$=1.3V and 1.96${\mu}{\textrm}{m}$10$^{-5A}$${\mu}{\textrm}{m}$. It is shown that turn off characteristic of new LIGBT is 8 times than that of conventional LIGBT. And noble LIGBT is not n+ buffer layer because that It includes p channel gate and n+ ring. Therefore Mask for the buffer layer isn’t needed. The concentration of n+ ring is and the numbers of n+ ring and p channel gate are three for the optimal design.n.n.n.n.

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A Practical TCP-friendly Rate Control Scheme for SVC Video Transport (SVC 비디오 전송을 위한 실용적인 TCP 친화적 전송률 제어 기법)

  • Seo, Kwang-Deok
    • Journal of KIISE:Computing Practices and Letters
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    • v.15 no.2
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    • pp.114-124
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    • 2009
  • In this paper, we propose a practical TCP friendly rate control scheme that considers the minimum channel bandwidth of the network when transporting SVC (scalable video coding) video over IP netowrks such as Internet. RTP and RTCP is mainly designed for use with UDP (User Datagram Protocol) for real-time video transport over the Internet. TCP-friendly rate control was proposed to satisfy the demands of multimedia applications while being reasonably fair when competing for bandwidth with conventional TCP applications. However the rate control model of the conventional TCP-friendly rate control scheme does not consider the minimum channel bandwidth of the network. Thus the estimated channel bandwidth by the conventional rate control model might be quite different from the real channel bandwidth when the packet loss ratio of the network is very large. In this paper, we propose a modified TCP-friendly rate control scheme that considers the minimum channel bandwidth of the network. Based on the modified TCP-friendly rate control, we assign the minimum channel bandwidth to the base layer bitstream of SVC video, and remaining available bandwidth is allocated to the enhancement layer of SVC video for the TCP friendly scalable video transmission. It is shown by simulations that the modified TCP-friendly rate control scheme can be effectively used for a wider range of controlled bit rates depending on the packet loss ratio than the conventional TCP-friendly control scheme. Furthermore, the effectiveness of the proposed scheme in terms of objective video quality is proved by comparing PSNR performance with the conventional scheme.

A Study on the propagation channel modeling for Korean joint tactical Data Link (한국형 합동전술데이터링크 구축을 위한 관한 전파환경 채널 모델링)

  • Lee, Sung-Gu
    • Proceedings of the Korea Information Processing Society Conference
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    • 2012.11a
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    • pp.814-817
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    • 2012
  • It has to secure the reliability for the propagation performance in the physical layer of the products for comprising system in order to satisfy the service quality. The radiowave environment under the actual service circumstance is measured. By using the channel model which models and which it obtains, the performance about the access device tries to be tested under the laboratory environment and there is the object of channel modeling.