• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.281-283
• /
• 2001

$Bi_{2}Sr_{2}CuO_{x}$(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion bearn sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition. two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit. then three dimensional growth takes place. Since Cu element is the most difficult to oxidize. only Sr and Bi react with each other predominantly. and forms a buffer layer on the substrate in an amorphous-like structure. which is changed to $SrBi_{2}O_{4}$ by in-situ anneal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.5
• /
• pp.497-501
• /
• 2004

The crystal structure of the GaN film on the AIN buffer layer grown by R. F sputtering with different thickness has been studied using X-ray scattering and transmission electron microscopy(TEM). The interface roughness between the AIN buffer layer and the epitaxial GaN film, due to crossover from planar to island grains, produced edge dislocations. The strain, coming from lattice mismatch between the AIN buffer layer and the epitaxial GaN film, produced screw dislocations. The density of the edge and screw dislocation propagating from the interface between the GaN film and the AIN buffer layer affected the electric resistance of GaN film.

• Korean Journal of Computational Design and Engineering
• /
• v.2 no.2
• /
• pp.71-76
• /
• 1997

The deformations of polycrystalline materials are modelled by linking a constitutive equation for the crystallographic slip of a single crystal to the macroscopic behavior of the aggregate. In this study, anisotropic elasticity (lattice stretching) of a cubic crystal is incoporated into the anisotropic plasticity from crystallographic slip. The constitutive description for the aggregate, derived from a crystal plasticity theory, is used to formulate a Consistent Penalty Finite Element Method for the anisotropic elasto-viscoplastic deformation of polycrystalline materials. As an application, a plane-strain forging process is simulated and the effects of the initial textures on the deformation behavior of the workpiece are examined.

• ETRI Journal
• /
• v.13 no.4
• /
• pp.42-51
• /
• 1991

MBE 성장시 기판 표면에서의 성장과정을 운동론적 지배과정과 열역학적 지배과정으로 나누어 성장모델을 제시하였으며, 화학적 평형상태에서의 열역학이 III-V compound의 성장속도와 composition 에 미치는 영향을 기존의 보고된 결과 데이터와 비교 분석하였다. 특히 miscibility gap 내에 존재하는 III-V ternary compound의 경우 박막의 성질 및 소자의 특성에 영향을 미치는 alloy clustering은 저온 성장시 surface kinetics에 의해, 고온성장시에는 열역학적 spinodal decomposition에 의해 결정됨을 알수 있었다. 열역학적 모델에서는 기판과 layer사이의 lattice mismatch와 재료의 elastic coefficient의 함수인 additive strain Gibbs free energy, 그리고 ternary solid solution의 regular behavior를 가정하여 ternary alloy의 mixing에 기인한 excess Gibbs free energy를 고려하였다.

• The Korean Journal of Ceramics
• /
• v.6 no.4
• /
• pp.385-389
• /
• 2000

Residual stresses in epitaxial films were measured by X-ray diffraction method. Lattice strains of the (hkl) planes measured along particular Ψ-angles were converted to the in-plane stress according to the equation of stress-strain tensor conversion. Residual tensile stresses were observed in epitaxial PbTiO$_3$ films deposited on (100) SrTiO$_3$ substrate. Tensile stresses approximately 0.9 GPa were measured in Pb-rich films, while it increased to approximately 2.0 GPa with the decreasing of Pb content in the case of Pb-poor films, which ascribed to the formation of lead and oxygen vacancies (expressed as x in Pb$_1-x$TiO$_3-x$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.281-283
• /
• 2001

Bi$_2$Sr$_2$CuO$\_$x/(Bi-2201) thin films were fabricated layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to SrBi$_2$O$_4$ by in-situ anneal.

• Applied Microscopy
• /
• v.36 no.spc1
• /
• pp.47-56
• /
• 2006

Improvements are made to existing primitive cell volume measurement method to provide a real-time analysis capability for the phase analysis of nanocrystalline materials. Simplification is introduced in the primitive cell volume calculation leading to fast and reliable method for nano-phase identification and is applied to the phase analysis of Mo-Si-N nanocoating layer. In addition, comparison is made between real-time and film measurements for their accuracy of calculated primitive cell volume values and factors governing the accuracy of the method are determined. About 5% accuracy in primitive cell determination is obtained from camera length calibration and this technique is used to investigate the cell volume variation in WC-TiC core-shell microstructure. In addition to chemical compositional variation in core-shell type structure, primitive cell volume variation reveals additional information on lattice coherency strain across the interface.

• Proceedings of the KIEE Conference
• /
• 2002.11a
• /
• pp.119-121
• /
• 2002

$Bi_2Sr_2CuO_x$ thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method, 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.

• Transactions of the Society of Information Storage Systems
• /
• v.9 no.2
• /
• pp.48-50
• /
• 2013

In this work, we investigated the diffraction of inverse-hemisphere shaped polymer grating. The grating was fabricated by using soft lithography of hexagonally close-packed PS nanospheres. The periodicity of the grating was tuned by swelling in acetone and the diffraction wavelength shift induced from lattice change was measured. This device can be used as a strain gauge or a chemical sensor.

• Coupled systems mechanics
• /
• v.4 no.2
• /
• pp.137-155
• /
• 2015

This paper presents a simple procedure to obtain a substitute, homogenized mechanical response of single layer graphene sheet. The procedure is based on the judicious combination of molecular mechanics simulation results and homogenization method. Moreover, a series of virtual experiments are performed on the representative graphene lattice. Following these results, the constitutive model development is based on the well-established continuum mechanics framework, that is, the non-linear membrane theory which includes the hyperelastic model in terms of principal stretches. A proof-of-concept and performance is shown on a simple model problem where the hyperelastic strain energy density function is chosen in polynomial form.