• Advances in nano research
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• v.12 no.2
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• pp.213-221
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• 2022

Silicon carbide (SiC) is a binary carbon-silicon compound. In its two-dimensional form, monolayer SiC is composed of a monolayer carbon and silicon atoms constructed as a honeycomb lattice. SiC has recently been receiving increasing attention from researchers owing to its intriguing electronic properties. In this present work, SiC nanoribbons (SiCNRs) are modelled and simulated to obtain accurate electronic properties, which can further guide fabrication processes, through bandgap engineering. The primary objective of this work is to obtain the electronic properties of monolayer SiCNRs by applying numerical computation methods using nearest-neighbour tight-binding models. Hamiltonian operator discretization and approximation of plane wave are assumed for the models and simulation by applying the basis function. The computed electronic properties include the band structures and density of states of monolayer SiCNRs of varying width. Furthermore, the properties are compared with those of graphene nanoribbons. The bandgap of ASiCNR as a function of width are also benchmarked with published DFT-GW and DFT-GGA data. Our nearest neighbour tight-binding (NNTB) model predicted data closer to the calculations based on the standard DFT-GGA and underestimated the bandgap values projected from DFT-GW, which takes in account the exchange-correlation energy of many-body effects.

• Nuclear Engineering and Technology
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• v.55 no.11
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• pp.4019-4025
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• 2023

Recently, a new monkey computational phantom, called Visible Monkey, was developed for non-ionizing radiation studies in animal research. In this study, we extended its applications to ionizing radiation studies by implementing the voxel model of the Visible Monkey into three general-purpose Monte Carlo (MC) codes: MCNP6, PHITS, and Geant4. The implementation work for MCNP and PHITS was conducted using the LATTICE, UNIVERSE, and FILL cards. The G4VNestedParameterisation class was used for Geant4. Then, organ dose coefficients (DCs) for idealized photon beams in the antero-posterior direction were calculated using the three codes and compared, showing excellent agreement (differences <3%). Additionally, organ DCs in other directions (postero-anterior, left-lateral, and right-lateral) were calculated and compared with those of the newborn and 1-year-old reference phantoms. Significant differences were observed (e.g., the stomach DC of the monkey was 5-fold greater than that of the 1-year-old phantom at 0.03 MeV) while the differences tended to decrease with increasing energy (mostly <20% at 10 MeV). The results of this study allows conducting MC simulations using the Visible Monkey to estimate organ-level doses, which should be valuable to support/improve monkey experiments involving ionizing radiation exposures.

• Journal of the Korean Magnetics Society
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• v.14 no.6
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• pp.219-223
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• 2004

L $i_{0.5}$F $e_{2.5-{\chi}}$R $h_{\chi}$ $O_4$ ($\chi$ = 0.25, 0.50, 0.75, 1.00) has been prepared by solid state reaction. Crystallographic and magnetic properties were investigated by Mossbauer spectroscopy, SQUID magnetometry, and x-ray diffraction. The crystal structure is found to be a cubic spinel structure with space group Fd3m for all the samples. The lattice constant $a_{0}$ increases from 8.3365 $\AA$ to 8.3932 $\AA$ with increasing Rh concentration $\chi$. The migration of Li ion has been confirmed by x-ray patterns and the results of applied field Mossbauer analysis. The temperature dependence of the absorption area of each site was analyzed with the Debye model for the recoil-free fraction. The Debye temperature for the octahedral sites is almost as large as for the tetrahedral sites, thereby suggesting similar inter-atomic binding forces for the octahedral and the tetrahedral sites. The saturated magnetic moment and the Mossbauer spectra taken at 4.2 K under the applied field (6 T) show that the spin structure of L $i_{0.5}$F $e_{2.5-{\chi}}$R $h_{\chi}$ $O_4$ is compatible with the collinear Neel Model.

• Journal of Internet Computing and Services
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• v.15 no.3
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• pp.101-107
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• 2014

With the development of online service, recent forms of databases have been changed from static database structures to dynamic stream database structures. Previous data mining techniques have been used as tools of decision making such as establishment of marketing strategies and DNA analyses. However, the capability to analyze real-time data more quickly is necessary in the recent interesting areas such as sensor network, robotics, and artificial intelligence. Landmark window-based frequent pattern mining, one of the stream mining approaches, performs mining operations with respect to parts of databases or each transaction of them, instead of all the data. In this paper, we analyze and evaluate the techniques of the well-known landmark window-based frequent pattern mining algorithms, called Lossy counting and hMiner. When Lossy counting mines frequent patterns from a set of new transactions, it performs union operations between the previous and current mining results. hMiner, which is a state-of-the-art algorithm based on the landmark window model, conducts mining operations whenever a new transaction occurs. Since hMiner extracts frequent patterns as soon as a new transaction is entered, we can obtain the latest mining results reflecting real-time information. For this reason, such algorithms are also called online mining approaches. We evaluate and compare the performance of the primitive algorithm, Lossy counting and the latest one, hMiner. As the criteria of our performance analysis, we first consider algorithms' total runtime and average processing time per transaction. In addition, to compare the efficiency of storage structures between them, their maximum memory usage is also evaluated. Lastly, we show how stably the two algorithms conduct their mining works with respect to the databases that feature gradually increasing items. With respect to the evaluation results of mining time and transaction processing, hMiner has higher speed than that of Lossy counting. Since hMiner stores candidate frequent patterns in a hash method, it can directly access candidate frequent patterns. Meanwhile, Lossy counting stores them in a lattice manner; thus, it has to search for multiple nodes in order to access the candidate frequent patterns. On the other hand, hMiner shows worse performance than that of Lossy counting in terms of maximum memory usage. hMiner should have all of the information for candidate frequent patterns to store them to hash's buckets, while Lossy counting stores them, reducing their information by using the lattice method. Since the storage of Lossy counting can share items concurrently included in multiple patterns, its memory usage is more efficient than that of hMiner. However, hMiner presents better efficiency than that of Lossy counting with respect to scalability evaluation due to the following reasons. If the number of items is increased, shared items are decreased in contrast; thereby, Lossy counting's memory efficiency is weakened. Furthermore, if the number of transactions becomes higher, its pruning effect becomes worse. From the experimental results, we can determine that the landmark window-based frequent pattern mining algorithms are suitable for real-time systems although they require a significant amount of memory. Hence, we need to improve their data structures more efficiently in order to utilize them additionally in resource-constrained environments such as WSN(Wireless sensor network).

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.284-284
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• 2016

Topological insulator (TI) is a bulk-insulating material with topologically protected Dirac surface states in the band gap. In particular, $Bi_2Se_3$ attracted great attention as a model three-dimensional TI due to its simple electronic structure of the surface states in a relatively large band gap (~0.3 eV). However, experimental efforts using $Bi_2Se_3$ have been difficult due to the abundance of structural defects, which frequently results in the bulk conduction being dominant over the surface conduction in transport due to the bulk doping effects of the defect sites. One promising approach in avoiding this problem is to reduce the structural defects by heteroepitaxially grow $Bi_2Se_3$ on a substrate with a compatible lattice structure, while also preventing surface degradation by encapsulating the pristine interface between $Bi_2Se_3$ and the substrate in a clean growth environment. A particularly promising choice of substrate for the heteroepitaxial growth is hexagonal boron nitride (h-BN), which has the same two-dimensional (2D) van der Waals (vdW) layered structure and hexagonal lattice symmetry as $Bi_2Se_3$. Moreover, since h-BN is a dielectric insulator with a large bandgap energy of 5.97 eV and chemically inert surfaces, it is well suited as a substrate for high mobility electronic transport studies of vdW material systems. Here we report the heteroepitaxial growth and characterization of high quality topological insulator $Bi_2Se_3$ thin films prepared on h-BN layers. Especially, we used molecular beam epitaxy to achieve high quality TI thin films with extremely low defect concentrations and an ideal interface between the films and substrates. To optimize the morphology and microstructural quality of the films, a two-step growth was performed on h-BN layers transferred on transmission electron microscopy (TEM) compatible substrates. The resulting $Bi_2Se_3$ thin films were highly crystalline with atomically smooth terraces over a large area, and the $Bi_2Se_3$ and h-BN exhibited a clear heteroepitaxial relationship with an atomically abrupt and clean interface, as examined by high-resolution TEM. Magnetotransport characterizations revealed that this interface supports a high quality topological surface state devoid of bulk contribution, as evidenced by Hall, Shubnikov-de Haas, and weak anti-localization measurements. We believe that the experimental scheme demonstrated in this talk can serve as a promising method for the preparation of high quality TI thin films as well as many other heterostructures based on 2D vdW layered materials.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.258-292
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• 1996

In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.24 no.2
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• pp.208-225
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• 2019

To understand the mean surface circulation and surface currents in the East Sea, trajectories of surface drifters passed through the East Sea from 1991 to 2017 were analyzed. By analyzing the surface drifter trajectory data, the main paths of surface ocean currents were grouped and the variation in each main current path was investigated. The East Korea Warm Current (EKWC) heading northward separates from the coast at $36{\sim}38^{\circ}N$ and flows to the northeast until $131^{\circ}E$. In the middle (from $131^{\circ}E$ to $137^{\circ}E$) of the East Sea, the average latitude of the currents flowing eastward ranges from 36 to $40^{\circ}N$ and the currents meander with large amplitude. When the average latitude of the surface drifter paths was in the north (south) of $37.5^{\circ}N$, the meandering amplitude was about 50 (100) km. The most frequent route of surface drifters in the middle of the East Sea was the path along $37.5-38.5^{\circ}N$. The surface drifters, which were deployed off the coast of Vladivostok in the north of the East Sea, moved to the southwest along the coast and were separated from the coast to flow southeastward along the cyclonic circulation around the Japan Basin. And, then, the drifters moved to the east along $39-40^{\circ}N$. The mean surface current vector and mean speed were calculated in each lattice with $0.25^{\circ}$ grid spacing using the velocity data of surface drifters which passed through each lattice. The current variance ellipses were calculated with $0.5^{\circ}$ grid spacing. Because the path of the EKWC changes every year in the western part of the Ulleung Basin and the current paths in the Yamato Basin keep changing with many eddies, the current variance ellipses are relatively large in these region. We present a schematic map of the East Sea surface current based on the surface drifter data. The significance of this study is that the surface ocean circulation of the East Sea, which has been mainly studied by numerical model simulations and the sea surface height data obtained from satellite altimeters, was analyzed based on in-situ Lagrangian observational current data.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.31 no.6
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• pp.468-477
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• 2019

The numerical model of Boussinesq approximation, which is mainly used for evaluating the port calmness due to the irregular waves, has a limit of applicability of lattice size in ports such as marinas with narrow port openings of around 30m. The SWASH model controls the partial reflection according to the depth, porosity coefficient and structure size when applying the reflected wave incident on the structure and terrain. In this study, the partial reflection evaluation at the front of the structure according to the bottom shape and the shape of the structure are examined. In order to evaluate the reproducibility of the model due to the diffraction waves entering the term, the area of incidence at right angles and inclination of the structure is constructed and compared with the diffraction theory suggested by Goda et al. (1978). The experimental results of the sectional structure reflectances calculated as the depth mean show reflectances similar to the approximate values of the reflectances presented by Stelling and Ahrens (1981). It is considered that the reflected wave is well reproduced according to the control of the reflected wave at the boundary and the shape and topography of the structure. Compared with previous studies to examine the diffraction of the wave incident from the breakwater opening, the wave incidence angle and the shape of the diffraction wave are very similar to the theoretical values, but both oblique and rectangular incidence In the case where the direction concentration is small, the diffraction degree is underestimated in some sections with the crest ratio of 0.5 to 0.6.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.85-90
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• 2012

In this paper, we compared and analyzed 3D silicon-oxide-nitride-oxide-silicon (SONOS) multi layer flash memory devices fabricated on nitride or oxide layer, respectively. The device fabricated on nitride layer has inferior electrical properties than that fabricated on oxide layer. However, the device on nitride layer has faster program / erase speed (P/E speed) than that on the oxide layer, although having inferior electrical performance. Afterwards, to find out the reason why the device on nitride has faster P/E speed, 1/f noise analysis of both devices is investigated. From gate bias dependance, both devices follow the mobility fluctuation model which results from the lattice scattering and defects in the channel layer. In addition, the device on nitride with better memory characteristics has higher normalized drain current noise power spectral density ($S_{ID}/I^2_D$>), which means that it has more traps and defects in the channel layer. The apparent hooge's noise parameter (${\alpha}_{app}$) to represent the grain boundary trap density and the height of grain boundary potential barrier is considered. The device on nitride has higher ${\alpha}_{app}$ values, which can be explained due to more grain boundary traps. Therefore, the reason why the devices on nitride and oxide have a different P/E speed can be explained due to the trapping/de-trapping of free carriers into more grain boundary trap sites in channel layer.

• Journal of the Korean Chemical Society
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• v.35 no.6
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• pp.617-624
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• 1991

Nonstoichiometric solid solutions of $Y_{1-x}A_xFeO_{3-y}$ (A = Ca, Sr) systems with perovskite structure were prepared for x = 0.00, 0.25, 0.50, 0.75 and 1.00 at 1200$^{\circ}C$ under atmospheric pressure, respectively. Crystallographic structures of the solid solutions of all compositions have been determined by the analysis of X-ray diffraction patterns. Reduced lattice volume of the $Y_{1-x}Ca_xFeO_{3-y}$ system was decreased with increasing x value and that of the $Y_{1-x}Sr_xFeO_{3-y}$ system was increased with increasing the x value. The mole ratios of $ Fe^{4+}$ to $ Fe^{3+}$, ${\tau}$, values in the solid solutions have been determined by Mohr salt's method of analysis and then the mixed valency was identified by Mossbauer spectroscopic analysis at 298 K. The y values were calculated from the x and ${\tau}$, and then nonstoichiometric chemical formulas were fixed. The conduction mechanism could be explained by hopping model of the conduction electrons between the mixed valence states.