• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 학술대회 논문집 전문대학교육위원
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• pp.35-39
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• 2000

$ZnIn_2S_4$ and $ZnGaInS_4:Er^{3+}$ single crystals crystallized in the rhombohedral (hexagonal) space group $C_{3v}^5(R3m)$, with lattice constants $a=3.852{\AA},\;c=37.215{\AA}$ for $ZnIn_2S_4$, and $a=3.823{\AA}$, and $c=35.975{\AA}$ for $ZnIn_2S_4:Er^{3+}$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of there compounds had a direct and indirect band gap, the direct and indirect energy gaps are found to be 2.778 and 2.682 eV for $ZnIn_2S_4$, and 2.725 and 2.651eV for $ZnIn_2S_4:Er^{3+}$ at 293 K. The photoluminescence spectra of $ZnIn_2S_4:Er^{3+}$ measured in the wavelength ranges of $500nm{\sim}900nm$ at 10 K. Eight sharp emission peaks due to $Er^{3+}$ ion are observed in the regions of $549.5{\sim}550.0nm,\;661.3{\sim}676.5nm$, and $811.1{\sim}834.1nm$, and $1528.2{\sim}1556.0nm$ in $CdGaInS_4:Er^{3+}$ single crystal. These PL peaks were attributed to the radiative transitions between the split electron energy levels of the $Er^{3+}$ ions occupied at $C_{2v}$, symmetry of the $ZnIn_2S_4$ single crystals host lattice.

• 한국항공우주학회지
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• 제40권2호
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• pp.129-138
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• 2012

에너지 균형조건을 고려하여 중형 태양광 추진 고고도 장기체공 무인기의 다분야 통합 최적설계를 수행하였다. 무인기의 공력 모델로 Vortex Lattice Method (VLM)를 사용하였으며 Cruz가 제안한 중량분석 모델로서 비행체 중량을 추정하였다. 비행체의 세로 정안정성 확보를 위하여 꼬리날개의 부피비를 고정하고 정안정성을 확보할 수 있도록 꼬리날개의 위치를 결정하였다. 태양전지, 축전지, 비행 고도 등 사용가능한 에너지와, 비행체의 필요에너지를 비교하여 24시간 지속비행 가능성을 결정하였다. 태양 입사 에너지는 북위 $36^{\circ}$의 여름을 기준으로 하였으며, 주간비행 중 태양에너지를 이용한 상승비행으로 확보한 위치에너지를 이용하여 야간 비행에 필요한 에너지를 보충하였다. 이를 바탕으로, 무인기의 주요 치수, 중량 분포 최적 설계와 장기체공을 실현할 수 있는 비행전략을 제시하였다.

• Journal of Magnetics
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• 제7권2호
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• pp.25-28
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• 2002

Slowly cooled $Cu_xFe_{3-x}O_4$ ($\chi$=0.1, 0.2) have been investigated over a temperature range from 82 to 700 K using the M$\ddot{o}$ssbauer technique. X-ray diffraction shows that these have a single-phase cubic spinel structure of lattice parameters $\alpha$=8.396 and 8.398${\AA}$, respectively. Since Cu ions prefer B (octahedral) sites to A (tetrahedral) sites, the ionic distribution is $(Fe)_A[Fe_{2-x}Cu_x]_BO_4$. M$\ddot{o}$ssbauer spectra consisted of two sets of 6-line pattern from. A site in ferric state and B site in ferrous-ferric state. Intensity ratio of B to A subspectra is 1.0 at 82 K and increases to 2.0 at 700 K with increasing temperature. After annealing the samples under vacuum at $450^circ{C}$ for a half hour, x-ray diffraction patterns have the peaks of magnetite- and hematite-phase. Lattice constants of magnetite-phase are 8.395 and 8.392 ${\AA}$ smaller than 8.396 and 8.398 ${\AA}$ before annealing, respectively. M$\ddot{o}$ssbauer spectra reveal the conventional magnetite pattern with the additional hematite pattern. Intensity ratios of B to A subspectra fur magnetite-phase become 1.9-2.0 over all temperature ranges and Cu ions are distributed over A and B sites randomly. Ratios of hematite to total intensity in M$\ddot{o}$ssbauer spectra for $\chi$= 0.1 and $\chi$= 0.2 are 10 and 21%, respectively. These hematite ratios may be due to annealing under vacuum at $450^circ{C}$, which transforms $Cu^{2+}$ ionic states into $Cu^{1+}$. Verwey temperatures far $\chi$= 0.1 and $\chi$= 0.2 are $123\pm2$ K and $128\pm2$ K.

• Transactions on Electrical and Electronic Materials
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• 제4권6호
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• pp.13-16
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• 2003

Mn-doped $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film phosphors have been grown using a pulsed laser deposition technique under various growth conditions. The structural characterization carr~ed out on a series of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) films grown on MgO(l00) substrates usmg Zn-rich ceramic targets. Oxygen pressure was varied from 50 to 200 mTorr and Zn/Ga ratio was the function of oxygen pressure. XRD patterns showed that the lattice constants of the $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film decrease with the substitution of sulfur and selenium for the oxygen in the $ZnGa_2O_4$. Measurements of photoluminescence (PL) properties of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin films have indicated that MgO(100) is one of the most promised substrates for the growth of high quality $ZnGa_2O_{4-x}M_{x}$:$Mn^{2+}$ (M=S, Se) thin films. In particular, the incorporation of Sulfur or Selenium into $ZnGa_2O_4$ lattice could induce a remarkable increase in the intensity of PL. The increasing of green emission intensity was observed with $ZnGa_2O_{3.925}Se_{0.075}:$Mn^{2+}$ and $ZnGa_2O_{3.925}S_{0.05}$:$Mn^{2+}$ films, whose brightness was increased by a factor of 3.1 and 1.4 in comparison with that of $ZnGa_{2}O_{4}$:$Mn^{2+}$ films, respectively. These phosphors may promise for application to the flat panel displays.

• 한국자기학회지
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• 제9권3호
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• pp.143-148
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• 1999

Spin-Peierls(SP) 전이를 하는 CuGeO3에서 Cu 이온과 Ge 이온을 자성 이온인 Fe 이온으로 일부 치환시킨 Cu1-xGe1-yFex+yO3계를 제조하여 전이온도 전후에서 자기적 특성과 결정학적 특성의 변화를 밝히기 위하여 자기감수율과 Mossbauer 스펙트럼을 측정 분석하였다. 결정구조는 모든 시료가 직방정계(orthorhombic)였고 격자 상수는 Fe의 치환량이 증가할수록 a축과 c축만 약간 감소하였다. 온도를 내리면서 측정한 자기감수율의 값이 12.5K 근처에서 급격히 감소하는 SP 전이를 나타냈는데 이 온도는 Fe의 치환량이 많아질수록 약간씩 낮아졌다. Mossbauer 스펙트럼은 Fe3+ 이온에 의한 두 개의 Zeeman sextet와 한 개의 이중선이 중첩되어 나타났는데 특히 SP 전이 온도(Tsp)에서 Mossbauer변수들이 불연속이었다. 즉, Tsp이하에서 두 번째 Zeeman선의 자기장이 크게 증가했고 이중선의 사중극자 분열값(QS)과 이성질체 이동값(IS)도 증가했는데, 이를 Tsp에서 이중체 형성에 따른 이온들의 위치 이동 계산 결과와 비교하여 초교한 상호작용, 대칭성 및 공유 결합성 등의 변화와 관련시켜 해석하였다.

• Bulletin of the Korean Chemical Society
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• 제9권6호
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• pp.345-349
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• 1988

The polycrystalline powder of (CaLa) (MgMo)$O_6$ has been prepared at $1350^{\circ}C$ in $H_2/H_2O$ and $N_2$ flowing atmosphere. The powder X-ray diffraction pattern indicates that (CaLa) (MgMo)$O_6$ has a monoclinic perovskite structure with the lattice constants $a_0=b_0=7.901(1){\AA}$, $c =7.875(1){\AA}\;and\;{\gamma}=89^{\circ}$16'(1'), which can be reduced to orthorhombic unit cell, a = 5.551(1) ${\AA}$, b = 5.622(1) ${\AA}$ and c = 7.875(1) ${\AA}$. The infrared spectrum shows two strong absorption bands with their maxima at 590($ν_3$) and 380($ν_4$) cm, which are attributed to $2T_{1u}$ modes indicating the existence of highly charged molybdenum octahedron $MoO_6$ in the crystal lattice. According to the magnetic susceptibility measurement, the compound follows the Curie-Weiss law below room temperature with the effective magnetic moment 1.83(1)$_{{\mu}B}$, which is well consistent with that of spin only value (1.73 $_{\mu}_B$) for $Mo^{5+}$ with $4d^1$-electronic configuration within the limit of experimental error. From the thermogravimetric analysis, it has been confirmed that (CaLa) (MgMo)$O_6$ decomposes gradually into $CaMoO_4,\;MoO_3,\;MgO,\;La_2O_3$ and unidentified phases due to the oxidation of $Mo^{5+}$ to $Mo^{6+}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.237-238
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• 2006

The electrical properties such as dielectric constants and dielectric losses in the spinel samples of $LiGaTiO_4$, Li(Ga,Eu)$TiO_4$, $Li(Ga.Yb)TiO_4$ have been characterized by varying measuring temperature and frequency. The long range order structures are analyzed by rietveld refinement method. and local atomic disorder structures are analyzed by MEM (maximum entropy method). The relation between the crystal structure and dielectric properties are discussed. $LiGaTiO_4$ spinel has the IMMA with lattice constant, a = 5.86333, b=17.5872. c = 8.28375 ${\AA}$, Li-sites are partially substituted by Ga or Ti. Two crystallographic oxygen sites are partially occupied(40~50%). The dielectric constants of $LiGaTiO_4$, $LiYbTiO_4$, and $LiGa_{2/6}Eu_{1/6}Ti_{1.5}O_4$ ceramics were 127, 75 and 272, respectively at 100 kHz. The dielectric relaxation were observed in the $LiGaTiO_3$ ceramics and the temperature where dielectric loss shows maximum was $390^{\circ}C$ at 1 kHz and increased with increasing the measuring frequency.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.327.1-327.1
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• 2014

Nitrides-on-silicon structures are considered to be an excellent candidate for unique design architectures and creating devices for high-power applications. Therefore, a lot of effort has been concentrating on growing high-quality III-nitrides on Si substrates, mostly Si(111) and Si(001) substrates. However, there are several fundamental problems in the growth of nitride compound semiconductors on silicon. First, the large difference in lattice constants and thermal expansion coefficients will lead to misfit dislocation and stress in the epitaxial films. Second, the growth of polar compounds on a non-polar substrate can lead to antiphase domains or other defective structures. Even though the lattice mismatches are reached to 16.9 % to GaN and 19 % to AlN and a number of dislocations are originated, Si(111) has been selected as the substrate for the epitaxial growth of nitrides because it is always favored due to its three-fold symmetry at the surface, which gives a good rotational matching for the six-fold symmetry of the wurtzite structure of nitrides. Also, Si(001) has been used for the growth of nitrides due to a possible integration of nitride devices with silicon technology despite a four-fold symmetry and a surface reconstruction. Moreover, Si(110), one of surface orientations used in the silicon technology, begins to attract attention as a substrate for the epitaxial growth of nitrides due to an interesting interface structure. In this system, the close lattice match along the [-1100]AlN/[001]Si direction promotes the faster growth along a particular crystal orientation. However, there are insufficient until now on the studies for the growth of nitride compound semiconductors on Si(110) substrate from a microstructural point of view. In this work, the microstructural properties of nitride thin layers grown on Si(110) have been characterized using various TEM techniques. The main purpose of this study was to understand the atomic structure and the strain behavior of III-nitrides grown on Si(110) substrate by molecular beam epitaxy (MBE). Insight gained at the microscopic level regarding how thin layer grows at the interface is essential for the growth of high quality thin films for various applications.

• 한국자기학회지
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• 제23권1호
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• pp.1-6
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• 2013

스핀 궤도 각운동량의 상호작용은 저차원계 자성물질에서 나타나는 여러 가지 특이한 현상들의 물리적 원인을 제공하는 것으로 알려져 있다. 최근 들어 자성 도핑을 이용한 열전 물질의 합금에 대한 관심이 높아지면서, 열전 및 위상 절연체(Topological Insulator) 등의 물리적 성질 결정에 중요한 역할을 하는 페르미 에너지 준위 부근에서의 전자구조에 대한 스핀 궤도 각운동량의 효과 연구가 관심을 끌고 있다. 본 연구에서는 가장 일반적인 열전 호스트 물질인 비스무스 텔루라이드의 격자 상수 및 부피 팽창률에 대한 스핀 궤도 각운동량 상호작용의 효과를 연구하기 위하여 모든 전자(all-electron) FLAPW(full-potential linearized augmented plane wave) 방법을 이용하여 전자구조 계산을 수행하였다. 국소밀도 근사법 및 일반 기울기 보정법의 서로 다른 교환상호작용 퍼텐셜을 채용하고, 수평격자 및 수직격자를 분리하여 변화시키는 구조최적화 계산을 통하여, 스핀-궤도 각운동량 상호작용의 효과가 격자상수 평형 값을 약하게 증가시키는 반면, 부피탄성률을 크게 감소시키는 영향을 주며, 그 효과는 구조적 이방성이 뚜렷한 비스무스 텔루라이드의 특성에 의하여 격자방향에 대한 의존성을 보인다는 것을 확인했다.

• 폴리머
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• 제32권2호
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• pp.150-156
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• 2008

Two different polyacrylonitrile samples (PANs, triad tacticity fraction is 0.25 and 0.64) were synthesized and used to study the kinetics of cyclization. Polymers were treated at different temperatures between 250 to $300^{\circ}C$ under air atmosphere, and analyzed by X-ray diffractometer. The sharp and strong peak at $2{\theta}=16.5^{\circ}$ corresponds to a lateral repeat distance that is the (100) diffraction in hexagonal lattice, while the peak at $2{\theta}=25.5^{\circ}$ reflects the (101) diffraction. In comparing their areas of different heat treated samples, the cyclization of both PANs was identified as a first-order reaction. The rate constants of cyclization reaction at different temperatures and the active energy parameter were obtained. This results might provide an important effect on pre-oxidation of polyacrylonitrile fiber.