• 제목/요약/키워드: Lattice constants

검색결과 183건 처리시간 0.023초

Nickel의 Embedded Atom Method 해석 (The Embedded Atom Method Analysis of the Nickel)

  • 정영관;김경훈;이근진;김종수
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 1997년도 추계학술대회 논문집
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    • pp.572-575
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    • 1997
  • The embedded atom method based on density functional theory was developed as a new means for calculating ground state properties of realistic metal system by Murray S. Daw, Stephen M. Foiles and Michael I. Baskes. In the paper, we had corrected constitutive formulae and parameters on the nickel for the purpose of doing Embedded Atom Method analysis. And then we have computed the properties of the nickel on the fundamental scale of the atomic structure. In result, simulated ground state properties, such as the lattice constant, elastics constants and sublimation energy, show good agreement with Daw's simulation data and with experimental data.

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TSSG-pulling of sillenite $Bi_{12}TiO_{20}$ for EOS application

  • Miyazawa, Shintaro
    • 한국결정성장학회지
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    • 제9권4호
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    • pp.424-431
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    • 1999
  • The reproducibility of successive growth of $Bi_{12}TiO_{20}$ (BTO) single crystlas using a top-seeded solution growth (TSSG) pulling method was evalutated by measuring the lattice constants and their standard deviations. A substantial phase diagram in the region close to the stoichiometric BTO was established expermentally for this purpose, and the existence of a retrograde solid solution close to a BTO was clarified. It was emphasized that a starting solution, with a 10.0~10.1 mol% $TiO_{2}$ concentration, results in large single crystals with a highly homogeneous lattice constant of within ${\pm}1{\times}10^{-4}\AA$, when the solidified fraction of the grown crystal is less than about 45 %. A wavelength dispersion of refractive index was measrued for the first time, and it was verified that the refractive index of BTO is larger than that of BSO($Bi_{12}TiO_{20}$), allowing the voltage sensitivity of EOS higher than the case with BSO as a probe head.

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MOLECULAR DYNAMICS SIMULATION OF INDENTATION ON SILVER COATED COPPER NANOSTRUCTURE

  • Kim, Am-Kee;Trandinh, Long;Kim, Il-Hyun
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2008년도 추계학술대회A
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    • pp.1794-1799
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    • 2008
  • The effect of misfit on the indentation behaviour of silver coated copper multilayer was studied by molecular dynamics simulation. It was found that the misfit bands on interface formed by the mismatch of lattice structure between copper and silver in slip direction [110] and the dislocation band width depended on the mismatched lattice constants of materials. More dislocations were created and glided by indentation, which created a "four-wing flower" structure consisting of pile. up of dislocation at the interface. The size of "flower" depended on the thickness of silver layer. The critical thickness for "flower" was approximately 4nm above which the "flower" disappeared. As the result, deformation mechanisms such as dislocation pile-up, dislocation cross-slip and movement of misfit dislocation were revealed. Only silver atoms in the dislocation pile-up were involved in the creation of the "flower" while the dislocations in copper were glided in slip direction on interface.

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$^{13}C$ Spin-Lattice Relaxation Study of Segmental Motions in n-alkanes: n-Undecane and n-Dodecane

  • Min, Buem-Chan;Lee, Jo-Woong
    • 한국자기공명학회논문지
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    • 제2권1호
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    • pp.1-23
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    • 1998
  • The motions of carbon-chain backbone in n-undecance and n-dodecane dissolved in CDCl3 are investigated by 13C NMR relaxation study. For this purpose a model of C - C backbone motions for these molecules is introduced that takes into account the cooperativities between rotations about two $\beta$-coupled C - C bonds. In this model it is assumed that the major conformational interconversions occurring in the inner part of the chain involve the type II jumps only, although at terminal part of the chain both type II and type III motions are assumed to take place. Information of the rate constants of these conformational transitions could be extracted by comparing the T1's calculated on the basis of the assumed model with those observed over the temperature range of 248 - 308 K. The calculations were performed according to the method proposed by Wittebort and Szabo. The activation energies, ranging from ca 12 to 20 kJ/mol, could be obtained from the Arrhenius plots of these calculated rate constants.

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Synthesis, Optical and Electrical Studies of Nonlinear Optical Crystal: L-Arginine Semi-oxalate

  • Vasudevan, P.;Sankar, S.;Jayaraman, D.
    • Bulletin of the Korean Chemical Society
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    • 제34권1호
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    • pp.128-132
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    • 2013
  • L-Arginine semi-oxalate (LASO) single crystal has been grown by solution growth technique at room temperature. The crystal structure and lattice parameters were determined for the grown crystal by single crystal X-ray diffraction studies. Photoluminescence studies confirm the violet fluorescence emission peak at 395 nm. Optical constants like band gap, refractive index, reflectance, extinction coefficient and electric susceptibility were determined from UV-VIS-NIR spectrum. The dielectric constant, dielectric loss and ac conductivity of the compound were calculated at different temperatures and frequencies to analyze the electrical properties. The solid state parameters such as plasma energy, Penn gap, Fermi energy and polarizability were calculated to analyze second harmonic generation (SHG). Nonlinear optical property was discussed to confirm the SHG efficiency of the grown crystal.

The recombination velocity at III-V compound heterojunctions with applications to Al/$_x$/Ga/$_1-x$/As-GaAs/$_1-y$/Sb/$_y$/ solar cells

  • 김정순
    • 전기의세계
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    • 제28권4호
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    • pp.53-63
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    • 1979
  • Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

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분무열분해법에 의한 ZnO:In 박막의 구조와 전기적 특성 (Structural and electrical properties of ZnO:In films deposited on glass substrates by a spray Pyrolysis method)

  • 서동주;박선흠
    • 한국진공학회지
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    • 제10권2호
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    • pp.213-218
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    • 2001
  • 분무열분해법으로 유리기판 위에 ZnO와 ZnO:In 박막을 성장시켰다. 성장된 ZnO 박막은 hexagonal 구조를 이루고, 격자상수 a=3.242 $\AA$, c=5.237 $\AA$였고, (002) 방향으로 선택 성장되었다. In을 0~6.03 at. % 불순물로 첨가하여 성장시킨 ZnO:In박막은 ZnO 박막의 결정구조와 같고 격자상수가 약간 증가하였다. ZnO:In 박막의 금속 이온의 비는 분무용액의 금속 이온의 비와 거의 일치하였다. ZnO:In 박막의 최소 비저항과 최대 운반자 농도는 In를 2.76 at % 불순물로 첨가하여 성장시킨 경우였는데, 그 값은 각각 19.1 $\Omega\cdot\textrm{cm}$, $2.11\times10^{19}\textrm{cm}^{-3]$이었다. In를 3.93 at. % 불순물로 첨가하여 성장시킨 ZnO:In 박막 경우 400~800 nm 영역에서의 광투과율은 95% 이상이었다.

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Synthesis and Comparative Analysis of Crystallite Size and Lattice Strain of Pb2Ba1.7Sr0.3Ca2Cu3O10+δ Superconductor

  • Hasan, Maher Abd Ali;Jasim, Kareem Ali;Miran, Hussein Ali Jan
    • 한국재료학회지
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    • 제32권2호
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    • pp.66-71
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    • 2022
  • In this article, Pb2Ba1.7Sr0.3Ca2Cu3O10+δ superconductor material was synthesized using conventional solid-state reaction method. X-ray diffraction (XRD) analysis demonstrated one dominant phase 2223 and some impurities in the product powder. The strongest peaks in the XRD pattern were successfully indexed assuming a pseudo-tetragonal cell with lattice constants of a = 3.732, b = 3.733 and c = 14.75 Å for a Pb-Based compound. The crystallite size and lattice strain between the layers of the studied compound were estimated using several methods, namely the Scherrer, Williamson-Hall (W.H), size-strain plot (SSP) and Halder Wagner (H.W) approach. The values of crystallite size, calculated by Scherrer, W.H, SSP and H.W methods, were 89.4540774, 86.658638, 87.7555823 and 85.470086 Å, respectively. Moreover, the lattice strain values obtained by W.H, SSP and H.W methods were 0.0063240, 0.006325 and 0.006, respectively. It was noted that all crystallite size results are consistent; however, the best method is the size-strain plot because it gave a value of R2 approaching one. Furthermore, degree of crystallites was calculated and found to be 59.003321%. Resistivity analysis suggests zero-resistance, which is typical of superconducting materials at critical temperature. Four-probe technique was utilized to measure the critical temperature at onset Tc(onset), zero resistivity Tc(off set), and transition (width ΔT), corresponding to temperatures of 128 K, 116 K, and 12 K, respectively.

GROSSBERG-KARSHON TWISTED CUBES AND BASEPOINT-FREE DIVISORS

  • HARADA, MEGUMI;YANG, JIHYEON JESSIE
    • 대한수학회지
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    • 제52권4호
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    • pp.853-868
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    • 2015
  • Let G be a complex semisimple simply connected linear algebraic group. The main result of this note is to give several equivalent criteria for the untwistedness of the twisted cubes introduced by Grossberg and Karshon. In certain cases arising from representation theory, Grossberg and Karshon obtained a Demazure-type character formula for irreducible G-representations as a sum over lattice points (counted with sign according to a density function) of these twisted cubes. A twisted cube is untwisted when it is a "true" (i.e., closed, convex) polytope; in this case, Grossberg and Karshon's character formula becomes a purely positive formula with no multiplicities, i.e., each lattice point appears precisely once in the formula, with coefficient +1. One of our equivalent conditions for untwistedness is that a certain divisor on the special fiber of a toric degeneration of a Bott-Samelson variety, as constructed by Pasquier, is basepoint-free. We also show that the strict positivity of some of the defining constants for the twisted cube, together with convexity (of its support), is enough to guarantee untwistedness. Finally, in the special case when the twisted cube arises from the representation-theoretic data of $\lambda$ an integral weight and $\underline{w}$ a choice of word decomposition of a Weyl group element, we give two simple necessary conditions for untwistedness which is stated in terms of $\lambda$ and $\underline{w}$.