• 전기학회논문지P
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• 제53권1호
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• pp.28-31
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• 2004

The results of investigations of Ag2Se single crystal are presented. $Ag_2Se$ crystal was grown by the Bridgman method. The $Ag_2Se$ single crystal was an orthorhombic structure with lattice constance $a=4.333{\AA}$, $b=7.062{\AA}$, $c=7.764{\AA}$. Hall effect shows a n-type conductivity in the $Ag_2Se$ single crystal. The electrical resistivity was $1.25{\times}10^3ohm^{-1}^cm{-1}$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).

• 열처리공학회지
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• 제9권2호
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• pp.91-102
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• 1996

Microstructural control to produce multiphase structure has received much attention to improve the high temperature strength as well as low temperature ductility of intermetallics. Transmission electron microscopic investigation has been carried out concerning the effect of Cr-precipitation on the mechanical properties of B2-ordered NiAl containing 4 to 8 mol% of Cr. By aging at temperatures around 973 K after solution annealing, fine spherical precipitates took place homogeneously in the NiAl matrix and the alloys hardened appreciably. Selected area electron diffraction (SAED) patterns have not revealed any additional extra-spots during aging, because the Cr-particles show cube-cube orientation relationship and keep a perfect coherency with the ordered matrix lattice. Dislocations were confirmed to bypass the particles during deformation. Although the dispersion of Cr-particles increased the yield strength of NiAl at intermediate temperature, the strength decreased appreciably at higher temperatures.

• Progress in Superconductivity
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• 제11권2호
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• pp.92-95
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• 2010

$SrPd_2Ge_2$ single crystals were grown by self-flux method. Several shiny plate-like single crystals were obtained. The crystal structure and lattice parameters were characterized using the x-ray diffractometor, which indicates the crystals are in a single phase of $ThCr_2Si_2$-type. We confirmed superconducting transition temperature at 2.7 K by measuring magnetization and electrical resistivity.

• Journal of Magnetics
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• 제16권4호
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• pp.337-341
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• 2011

The magnetic and magnetocaloric properties of $Gd_{1-x}Ce_xAl_2$ (x = 0, 0.25, 0.5, 0.75) intermetallic compounds alloys have been investigated in detail for the first time. XRD patterns indicated that all the samples were crystallized in a single phase with $MgCu_2$-type structure (Laves phase). Ce substitution for Gd increased the lattice parameters and decreased the Curie temperature from 163 K for x = 0 to 37 K for x = 0.75. A maximum entropy change of 3.82 J/kg K was observed when a 2 T magnetic field was applied to the x = 0 sample. This entropy change decreased with increasing Ce content to 2.04 J/kg K for the x = 0.75 sample.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.981-982
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• 2006

In this study, the synthesis and semiconducting properties of cation and defect-doped KTaO3 film is reported. KTaO3is an important material for optoelectronic and tunable microwave applications. It is an incipient ferroelectric with a cubic structure that becomes ferroelectric when doped with Nb. the films were grown on (001) MgO single crystal substrates using pulsed-laser deposition. Semiconducting behavior is achieved by inducing oxygen vacancies in the KTaO3 lattice via growth in a hydrogen atmosphere. The resistivity of semiconducting KTaO3:Ca films was as low as 10cm, and n-type semiconducting behavior was indicated. Hall mobility and carrier concentration were 0.27 cm2/Vs and 3.21018cm-3.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1407-1409
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• 2003

The results of investigations of $Ag_2Te$ crystal is presented. $Ag_2Te$ crystal was grown by the Bridgman method. The $Ag_2Te$ crystal was an monoclinic structure with lattice constance a = 8.1686, b=9.0425, c=8.0065. Hall effect shows a n-type conductivity in the $Ag_2Te$ crystal. The electrical resistivity values was $1.080e^{-3}cm$ and electron mobility was $-5.4810^{3}cm^{2}$/Vsec at room temperature(RT).

• Applied Microscopy
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• 제36권spc1호
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• pp.47-56
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• 2006

Improvements are made to existing primitive cell volume measurement method to provide a real-time analysis capability for the phase analysis of nanocrystalline materials. Simplification is introduced in the primitive cell volume calculation leading to fast and reliable method for nano-phase identification and is applied to the phase analysis of Mo-Si-N nanocoating layer. In addition, comparison is made between real-time and film measurements for their accuracy of calculated primitive cell volume values and factors governing the accuracy of the method are determined. About 5% accuracy in primitive cell determination is obtained from camera length calibration and this technique is used to investigate the cell volume variation in WC-TiC core-shell microstructure. In addition to chemical compositional variation in core-shell type structure, primitive cell volume variation reveals additional information on lattice coherency strain across the interface.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.170-173
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• 2006

[ $CuInS_2$ ] filims were appeared from 0.84 to 1.27 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated, Also when Cu/In composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). And lattice constant (a) of and grain size of the film tin s ambient were appeared a little larger than those in only Vacuum The films in S ambient were p-type with resistive of around $10^{-1}{\Omega}cm$ and optical energy band gaps of the films in S ambient were appeared a little larger than those in only Vacuum. Analysis of the optical energy band gap of $CuInS_2$ thin films a value of 1.53eV.

• 전기학회논문지
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• 제56권5호
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• pp.915-920
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• 2007

AIN-based film bulk acoustic resonator (FBAR) devices which adopt a membrane-type configuration such as Mo/AIN/bottom-metal/Si are fabricated by employing a novel process. The proposed resonator structure does not require any supporting layer above the substrate, which leads to the reduction in energy loss of the resonators. For all the FBAR devices, the frequency response characteristics are measured and the device parameters, such as return loss and input impedance, are extracted from the frequency responses, and analyzed in terms of the various metals such as Al. Cu, Mo, W used in the bottom-electrode. The mass-loading effect caused by the used bottom-electrode metals is found to be the main reason for the difference revealed in the measured characteristics of the fabricated FBAH devices. The results obtained in this study also show that the degree of match in lattice constant and thermal expansion coefficient hetween piezoelectric layers and electrode metals is crucial to determine the device performance of FEAR.

• 한국재료학회지
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• 제11권10호
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• pp.859-862
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• 2001

The crystal structure and magnetic properties of the $Ni_{1-x} Cd_xFeAlO_4$(0$\leq$x$\leq$0.5) have been investigated by means of X-ray diffractometry and Mossbauer spectroscopy. The samples($0\leq$x$\leq$0.5) have been prepared by the ceramic sintering method. The X-ray diffraction pattern shows that the crystal structure of the samples is a cubic spinel type. The lattice constant has been found by extrapolation using the Nelson- Riley function and it increases slightly from $8.321{\AA}$ to $8.410{\AA}$ with Cd concentration. The Mossbauer spectra for x<0.4 show a superposition of two sextets and a paramagnetic doublet at room temperature. The cation distribution for x=0 was determined to be $[Fe_{0.75}Al_{0.25}]^A[NiFe_{0.25}Al_{0.75}^BO_4$. The superparamagnetic doublet for x< 0.4 seems to be due to A1 ion in tetrahedral site by the superparamagnetic clustering effect.