• Proceedings of the KIEE Conference
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• 2000.07e
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• pp.35-39
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• 2000

$ZnIn_2S_4$ and $ZnGaInS_4:Er^{3+}$ single crystals crystallized in the rhombohedral (hexagonal) space group $C_{3v}^5(R3m)$, with lattice constants $a=3.852{\AA},\;c=37.215{\AA}$ for $ZnIn_2S_4$, and $a=3.823{\AA}$, and $c=35.975{\AA}$ for $ZnIn_2S_4:Er^{3+}$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of there compounds had a direct and indirect band gap, the direct and indirect energy gaps are found to be 2.778 and 2.682 eV for $ZnIn_2S_4$, and 2.725 and 2.651eV for $ZnIn_2S_4:Er^{3+}$ at 293 K. The photoluminescence spectra of $ZnIn_2S_4:Er^{3+}$ measured in the wavelength ranges of $500nm{\sim}900nm$ at 10 K. Eight sharp emission peaks due to $Er^{3+}$ ion are observed in the regions of $549.5{\sim}550.0nm,\;661.3{\sim}676.5nm$, and $811.1{\sim}834.1nm$, and $1528.2{\sim}1556.0nm$ in $CdGaInS_4:Er^{3+}$ single crystal. These PL peaks were attributed to the radiative transitions between the split electron energy levels of the $Er^{3+}$ ions occupied at $C_{2v}$, symmetry of the $ZnIn_2S_4$ single crystals host lattice.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.40 no.2
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• pp.129-138
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• 2012

A MDO study of a midium-sized solar powered High Altitude Long Endurance (HALE) UAV has been performed, focused on energy balance. In the MDO process, Vortex Lattice Method(VLM) is employed for the aerodynamic modeling of the vehicle, of which structural weight is estimated with the modeling proposed by Cruz. Tail volume ratios have been set as constants, while the location of tail surfaces is determined from longitudinal static stability criterion. By balancing the available energy from solar cells, battery, and altitude, with the energy-requirement of the vehicle, the possibility of continuous flight over 24-hours has been investigated. The solar radiation level is set as that of summer at the latitude of $36^{\circ}$ north. During the daytime, the aircraft climbs using solar energy, accumulating potential energy, which supplements energy balance during the night. Optimizations have been sought in size of the vehicle, its weight distribution, and flight strategy.

• Journal of Magnetics
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• v.7 no.2
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• pp.25-28
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• 2002

Slowly cooled $Cu_xFe_{3-x}O_4$ ($\chi$=0.1, 0.2) have been investigated over a temperature range from 82 to 700 K using the M$\ddot{o}$ssbauer technique. X-ray diffraction shows that these have a single-phase cubic spinel structure of lattice parameters $\alpha$=8.396 and 8.398${\AA}$, respectively. Since Cu ions prefer B (octahedral) sites to A (tetrahedral) sites, the ionic distribution is $(Fe)_A[Fe_{2-x}Cu_x]_BO_4$. M$\ddot{o}$ssbauer spectra consisted of two sets of 6-line pattern from. A site in ferric state and B site in ferrous-ferric state. Intensity ratio of B to A subspectra is 1.0 at 82 K and increases to 2.0 at 700 K with increasing temperature. After annealing the samples under vacuum at $450^circ{C}$ for a half hour, x-ray diffraction patterns have the peaks of magnetite- and hematite-phase. Lattice constants of magnetite-phase are 8.395 and 8.392 ${\AA}$ smaller than 8.396 and 8.398 ${\AA}$ before annealing, respectively. M$\ddot{o}$ssbauer spectra reveal the conventional magnetite pattern with the additional hematite pattern. Intensity ratios of B to A subspectra fur magnetite-phase become 1.9-2.0 over all temperature ranges and Cu ions are distributed over A and B sites randomly. Ratios of hematite to total intensity in M$\ddot{o}$ssbauer spectra for $\chi$= 0.1 and $\chi$= 0.2 are 10 and 21%, respectively. These hematite ratios may be due to annealing under vacuum at $450^circ{C}$, which transforms $Cu^{2+}$ ionic states into $Cu^{1+}$. Verwey temperatures far $\chi$= 0.1 and $\chi$= 0.2 are $123\pm2$ K and $128\pm2$ K.

• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.13-16
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• 2003

Mn-doped $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film phosphors have been grown using a pulsed laser deposition technique under various growth conditions. The structural characterization carr~ed out on a series of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) films grown on MgO(l00) substrates usmg Zn-rich ceramic targets. Oxygen pressure was varied from 50 to 200 mTorr and Zn/Ga ratio was the function of oxygen pressure. XRD patterns showed that the lattice constants of the $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film decrease with the substitution of sulfur and selenium for the oxygen in the $ZnGa_2O_4$. Measurements of photoluminescence (PL) properties of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin films have indicated that MgO(100) is one of the most promised substrates for the growth of high quality $ZnGa_2O_{4-x}M_{x}$:$Mn^{2+}$ (M=S, Se) thin films. In particular, the incorporation of Sulfur or Selenium into $ZnGa_2O_4$ lattice could induce a remarkable increase in the intensity of PL. The increasing of green emission intensity was observed with $ZnGa_2O_{3.925}Se_{0.075}:$Mn^{2+}$ and $ZnGa_2O_{3.925}S_{0.05}$:$Mn^{2+}$ films, whose brightness was increased by a factor of 3.1 and 1.4 in comparison with that of $ZnGa_{2}O_{4}$:$Mn^{2+}$ films, respectively. These phosphors may promise for application to the flat panel displays.

• Journal of the Korean Magnetics Society
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• v.9 no.3
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• pp.143-148
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• 1999

Magnetic properties and crystallographic properties of $Cu_{1-x}Ge_{1-y}Fe_{x+y}O_3$ system were studied by using x-ray diffraction, superconducting quantum interference device (SQUID) and Mossbauer spectroscopy. All the samples have orthorhombic structure and the lattice constants some decreased as the substituted iron contents increasing. The spin-Peierls (SP) transition temperature of our samples are about 12.5 K and these temperatures lowered as increasing substituted iron contents. The Mossbauer spectra consisted with two Zeeman sextets and one doublet due to $Fe^{3+}$ ions. The jump up of magnetic hyperfine field of 2nd Zeeman sextet and the increasing of the values of quadrapole splitting and isomer shift of doublet below SP transition temperature could be interpreted with the variation of the superexchange interaction, the symmetry of lattice sites and the covalency of bonds due to the atomic displacements.

• Bulletin of the Korean Chemical Society
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• v.9 no.6
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• pp.345-349
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• 1988

The polycrystalline powder of (CaLa) (MgMo)$O_6$ has been prepared at $1350^{\circ}C$ in $H_2/H_2O$ and $N_2$ flowing atmosphere. The powder X-ray diffraction pattern indicates that (CaLa) (MgMo)$O_6$ has a monoclinic perovskite structure with the lattice constants $a_0=b_0=7.901(1){\AA}$, $c =7.875(1){\AA}\;and\;{\gamma}=89^{\circ}$16'(1'), which can be reduced to orthorhombic unit cell, a = 5.551(1) ${\AA}$, b = 5.622(1) ${\AA}$ and c = 7.875(1) ${\AA}$. The infrared spectrum shows two strong absorption bands with their maxima at 590($ν_3$) and 380($ν_4$) cm, which are attributed to $2T_{1u}$ modes indicating the existence of highly charged molybdenum octahedron $MoO_6$ in the crystal lattice. According to the magnetic susceptibility measurement, the compound follows the Curie-Weiss law below room temperature with the effective magnetic moment 1.83(1)$_{{\mu}B}$, which is well consistent with that of spin only value (1.73 $_{\mu}_B$) for $Mo^{5+}$ with $4d^1$-electronic configuration within the limit of experimental error. From the thermogravimetric analysis, it has been confirmed that (CaLa) (MgMo)$O_6$ decomposes gradually into $CaMoO_4,\;MoO_3,\;MgO,\;La_2O_3$ and unidentified phases due to the oxidation of $Mo^{5+}$ to $Mo^{6+}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.237-238
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• 2006

The electrical properties such as dielectric constants and dielectric losses in the spinel samples of $LiGaTiO_4$, Li(Ga,Eu)$TiO_4$, $Li(Ga.Yb)TiO_4$ have been characterized by varying measuring temperature and frequency. The long range order structures are analyzed by rietveld refinement method. and local atomic disorder structures are analyzed by MEM (maximum entropy method). The relation between the crystal structure and dielectric properties are discussed. $LiGaTiO_4$ spinel has the IMMA with lattice constant, a = 5.86333, b=17.5872. c = 8.28375 ${\AA}$, Li-sites are partially substituted by Ga or Ti. Two crystallographic oxygen sites are partially occupied(40~50%). The dielectric constants of $LiGaTiO_4$, $LiYbTiO_4$, and $LiGa_{2/6}Eu_{1/6}Ti_{1.5}O_4$ ceramics were 127, 75 and 272, respectively at 100 kHz. The dielectric relaxation were observed in the $LiGaTiO_3$ ceramics and the temperature where dielectric loss shows maximum was $390^{\circ}C$ at 1 kHz and increased with increasing the measuring frequency.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.327.1-327.1
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• 2014

Nitrides-on-silicon structures are considered to be an excellent candidate for unique design architectures and creating devices for high-power applications. Therefore, a lot of effort has been concentrating on growing high-quality III-nitrides on Si substrates, mostly Si(111) and Si(001) substrates. However, there are several fundamental problems in the growth of nitride compound semiconductors on silicon. First, the large difference in lattice constants and thermal expansion coefficients will lead to misfit dislocation and stress in the epitaxial films. Second, the growth of polar compounds on a non-polar substrate can lead to antiphase domains or other defective structures. Even though the lattice mismatches are reached to 16.9 % to GaN and 19 % to AlN and a number of dislocations are originated, Si(111) has been selected as the substrate for the epitaxial growth of nitrides because it is always favored due to its three-fold symmetry at the surface, which gives a good rotational matching for the six-fold symmetry of the wurtzite structure of nitrides. Also, Si(001) has been used for the growth of nitrides due to a possible integration of nitride devices with silicon technology despite a four-fold symmetry and a surface reconstruction. Moreover, Si(110), one of surface orientations used in the silicon technology, begins to attract attention as a substrate for the epitaxial growth of nitrides due to an interesting interface structure. In this system, the close lattice match along the [-1100]AlN/[001]Si direction promotes the faster growth along a particular crystal orientation. However, there are insufficient until now on the studies for the growth of nitride compound semiconductors on Si(110) substrate from a microstructural point of view. In this work, the microstructural properties of nitride thin layers grown on Si(110) have been characterized using various TEM techniques. The main purpose of this study was to understand the atomic structure and the strain behavior of III-nitrides grown on Si(110) substrate by molecular beam epitaxy (MBE). Insight gained at the microscopic level regarding how thin layer grows at the interface is essential for the growth of high quality thin films for various applications.

• Journal of the Korean Magnetics Society
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• v.23 no.1
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• pp.1-6
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• 2013

Spin-orbit coupling (SOC) effect is known to be the physical origin for various exotic magnetic phenomena in the low-dimensional systems. Recently, SOC also draws lots of attention in the study on magnetically doped thermoelectric alloys to determine their properties as the thermoelectric application as well as the topological insulator via the exact electronic structures determination near the Fermi level. In this research, aiming to investigate the spin-orbit coupling effect on the structural properties such as the lattice constants and the bulk modulus of the most widely investigated thermoelectric host material, $Bi_2Te_3$, we carried out the first-principles electronic structure calculation using the all-electron FLAPW (full-potential linearized augmented plane-wave) method. Employing both the local density approximation (LDA) and the generalized gradient approximation (GGA), the structural optimization is achieved by varying the in-plane lattice constant fixing the perpendicular lattice constant and vice versa, to find that the SOC effect increases the equilibrium lattices slightly in both directions while it markedly reduces the bulk modulus value implying the strong orientational dependence, which are attributed to the material's intrinsic structural anisotropy.

• Polymer(Korea)
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• v.32 no.2
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• pp.150-156
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• 2008

Two different polyacrylonitrile samples (PANs, triad tacticity fraction is 0.25 and 0.64) were synthesized and used to study the kinetics of cyclization. Polymers were treated at different temperatures between 250 to $300^{\circ}C$ under air atmosphere, and analyzed by X-ray diffractometer. The sharp and strong peak at $2{\theta}=16.5^{\circ}$ corresponds to a lateral repeat distance that is the (100) diffraction in hexagonal lattice, while the peak at $2{\theta}=25.5^{\circ}$ reflects the (101) diffraction. In comparing their areas of different heat treated samples, the cyclization of both PANs was identified as a first-order reaction. The rate constants of cyclization reaction at different temperatures and the active energy parameter were obtained. This results might provide an important effect on pre-oxidation of polyacrylonitrile fiber.