• Journal of Magnetics
• /
• 제19권3호
• /
• pp.210-214
• /
• 2014

The effects of manganese substitution on the crystallographic and magnetic properties of Li-Zn-Cu ferrite, $Li_{0.5}Zn_{0.2}Cu_{0.4}Mn_xFe_{2.1-x}O_4$ ($0.0{\leq}x{\leq}0.8$), were investigated. Ferrites were synthesized via a conventional ceramic method. We confirmed the formation of crystallized particles using X-ray diffraction, field emission scanning electron microscopy and $M{\ddot{o}}ssbauer$ spectroscopy. All of the samples showed a single phase with a spinel structure, and the lattice constants linearly decreased as the substituted manganese content increased, and the particle size of the samples also somewhat decreased as the doped manganese content increased. All the $M{\ddot{o}}ssbauer$ spectra can be fitted with two Zeeman sextets, which are the typical spinel ferrite spectra of $Fe^{3+}$ with A- and B-sites, and one doublet. The cation distribution was determined from the variation of the $M{\ddot{o}}ssbauer$ parameters and of the absorption area ratio. The magnetic behavior of the samples showed that an increase in manganese content led to a decrease in the saturation magnetization, whereas the coercivity was nearly constant throughout. The maximum saturation magnetization was 73.35 emu/g at x = 0.0 in $Li_{0.5}Zn_{0.2}Cu_{0.4}Mn_xFe_{2.1-x}O_4$.

• 한국세라믹학회지
• /
• 제43권6호
• /
• pp.362-368
• /
• 2006

Epitaxial $Ba_{0.5}Sr_{0.5}TiO_3$ (BSTO) thin films have been grown on TiN buffered Si (001) substrates by Pulsed Laser Deposition (PLD) method and the effects of substrate temperature and oxygen partial pressure during the deposition on their dielectric properties and crystallinity were investigated. The crystal orientation, epitaxy nature, and microstructure of oxide thin films were investigated using X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). Thin films were prepared with laser fluence of $4.2\;J/cm^2\;and\;3\;J/cm^2$, repetition rate of 8 Hz and 10 Hz, substrate temperatures of $700^{\circ}C$ and ranging from $350^{\circ}C\;to\;700^{\circ}C$ for TiN and oxide respectively. BSTO thin-films were grown on TiN-buffered Si substrates at various oxygen partial pressure ranging from $1{\times}10^{-4}$ torr to $1{\times}10^{-5}$ torr. The TiN buffer layer and BSTO thin films were grown with cube-on-cube epitaxial orientation relationship of $[110](001)_{BSTO}{\parallel}[110](001)_{TiN}{\parallel}[110](001)_{Si}$. The crystallinity of BSTO thin films was improved with increasing substrate temperature. C-axis lattice parameters of BSTO thin films, calculated from XRD ${\theta}-2{\theta}$ scans, decreased from 0.408 m to 0.404 nm and the dielectric constants of BSTO epitaxial thin films increased from 440 to 938 with increasing processing oxygen partial pressure.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
• /
• pp.56-59
• /
• 2004

The stochiometric composition of $AgGaS_2$ polycrystal source materials for the $AgGaS_2/GaAs$ epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$ has tetragonal structure of which lattice constant $a_0$ and $c_0$ were 5.756 ${\AA}$ and 10.305 ${\AA}$, respectively. $AgGaS_2/GaAs$ epilayer was deposited on throughly etched GaAs (100) substrate from mixed crystal $AgGaS_2$ by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2/GaAs$ epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2/GaAs$ epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by ${\alpha}=8.695{\times}10^{-4}eV/K$, and $\beta$=332 K. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2/GaAs$ epilayer, we have found that crystal field splitting $\Delta$ Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.425.1-425.1
• /
• 2014

Thermal transport in nanomaterials is not only scientifically interesting but also technological important for various future electronic, bio, and energy device applications. Among the various computation approaches to investigate lattice thermal transport phenomena in nanoscale, the atomistic nonequilibrium Green's function approach based on first-principles density functional theory calculations appeared as a promising method given the continued miniaturization of devices and the difficulty of developing classical force constants for novel nanoscale interfaces. Among the nanometerials, carbon atomic chains, namely the cumulene (all-doulble bonds, ${\cdots}C=C=C=C{\cdots}$) and polyyne (alternation of single and triple bonds, ${\cdots}C{\equiv}C-C{\equiv}C{\cdots}$) can be considered as the extream cases of interconnction materials for nanodevices. After the discovery and realization of carbon atomic chains, their electronic transport properties have been widely studied. For the thermal transport properties, however, there have been few literatures for this simple linear chain system. In this work, we first report on the development of a non-equilibrium Green's function theory-based computational tool for atomistic thermal transport calculations of nanojunctions. Using the developed tool, we investigated phonon dispersion and transmission properties of polyethylene (${\cdots}CH2-CH2-CH2-CH2{\cdots}$) and polyene (${\cdots}CH-CH-CH-CH{\cdots}$) structures as well as the cumulene and polyyne. The resulting phonon dispersion from polyethylene and polyene showed agreement with previous results. Compared to the cumulene, the gap was found near the ${\Gamma}$ point of the phonon dispersion of polyyne as the prediction of Peierls distortion, and this feature was reflected in the phonon transmission of polyyne. We also investigated the range of interatomic force interactions with increase in the size of the simulation system to check the convergence criteria. Compared to polyethylene and polyene, polyyne and cumulene showed spatially long-ranged force interactions. This is reflected on the differences in phonon transport caused by the delicate differences in electronic structure.

• 한국진공학회지
• /
• 제2권2호
• /
• pp.220-226
• /
• 1993

Bridgman 방법으로 성장된 $TlGa_xIn_{1-x}Se_2$ 단결정의 격자상수와 energy gap의 성분의존성을 조사하였다. $TlGa_xIn_{1-x}Se_2$ solid solution의 불연속 특성이 tetragonal과 monoclinic 구조를 가진 0.25$0.0{\leq}X{\leq}0.25$)로부터 monoclinic 구조($0.65{\leq}X{\leq}1.0$)로 변하는 구조적 상전이가 이 성분영역에서 관측되었다. $TlGaSe_2$ 단결정의 energy gap과 유전상수의 온도의존성으로부터 각각 1차 및 2차 상전이에 상당하는 107 K와 120 K에서 변칙특성을 발견하였다.

• 한국자기학회지
• /
• 제10권1호
• /
• pp.16-21
• /
• 2000

Spin-Peierls(SP) 전이 현상을 나타내는 $Cu_{0.95}Ge_{0.95}Fe_{0.1}O_3$를 제조하여 자기적 특성과 결정학적 특성을 알기 위하여 x선 회절, 자기감수율과 Mossbauer 스펙트럼을 측정 분석하였다. 결정구조는 직방정계(orthorhombic)였고 격자 상수는 a = 4.795 $\AA$, b = 8.472 $\AA$, c = 2.932 $\AA$이며, SP 전이 온도($T_{sp}$)는 13 K임을 알아냈다. 상온에서 Mossbauer 스펙트럼은 $Fe^{3+}$ 이온에 의한 두 개의 Zeeman선과 한 개의 이중선이 중첩되어 나타났다. Ge 이온만을 Fe 이온으로 치환시켜 만든 시료의 Mossbauer스펙트럼은 Zeeman 선을 나타내고, Cu 이온만을 Fe 이온으로 치환시켜 만든 시료의 Mossbuer 스펙트럼은 이중선을 나타내는 것으로 보아 각각의 선이 Ge와 Cu 자리로 치환되어 들어간 Fe 이온에 의한 것으로 생각된다. 또한 $T_{sp}$ 이하에서 Mossbauer 변수들의 불연속을 이중체가 형성되면서 나타나는 이온들의 위치 이동에 관련시켜 해석하였다. 본 시료외 N el온도는 715 K이고, Debye온도는 팔면체 자리가 540 K, 사면체 자리가 380 K임을 알아냈다.

• Bulletin of the Korean Chemical Society
• /
• 제34권4호
• /
• pp.1205-1211
• /
• 2013

The structural and optical properties of the ZnO, Al-doped ZnO, Ga-doped ZnO, and In-doped ZnO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction, photoluminescence (PL) and ultraviolet-visible spectroscopy. All the nanorods grew with good alignment on the ZnO seed layers and the ZnO nanorod dimensions could be controlled by the addition of the various dopants. For instance, the diameter of the nanorods decreased with increasing atomic number of the dopants. The ratio between the near-band-edge emission (NBE) and the deep-level emission (DLE) intensities ($I_{NBE}/I_{DLE}$) obtained by PL gradually decreased because the DLE intensity from the nanorods gradually increased with increase in the atomic number of the dopants. We found that the dopants affected the structural and optical properties of the ZnO nanorods including their dimensions, lattice constants, residual stresses, bond lengths, PL properties, transmittance values, optical band gaps, and Urbach energies.

• 한국정보통신학회:학술대회논문집
• /
• 한국해양정보통신학회 2001년도 추계종합학술대회
• /
• pp.660-664
• /
• 2001

$Zn_xSr_{1-x}S$ 박막을 sputtering법에 의해 제작하여 결정구조, 결합상태, 광학적 특성 등의 분석에 의해 고용체 유무를 판단하고 유전체 이론과 비교.검토하였다. 실험결과 $0.86~0.93{\leq}x{\leq}1$에서 zincblende 구조, $0{\leq}x{\leq}0.29$범위에서 rocksalt구조의 고용체로 되었으며, 이들 영역에서는 격자정수, 결합에너지 및 흡수단은 조성에 따라 거의 직선적으로 변화했다. 상분리 영역을 포함한 miscibility gap은 $0.3{\leq}x{\leq}0.86~0.91$범위에서 존재하고 이 영역에서의 격자정수, 결합에너지 및 흡수단은 경계 조성의 값으로 일정했다. 상전이에 관한 실험결과는 Phillips의 유전이론에 기초한 이온성과 일치하였다.

• Bulletin of the Korean Chemical Society
• /
• 제30권11호
• /
• pp.2603-2607
• /
• 2009

$LiNi_{0.5-x}Co_{2x}Mn_{0.5-x}O_{2}$ (x = 0, 0.1, 1/6, 1.2, 0.3) were synthesized by the solid-state reaction method. The crystal structure was analyzed by X-ray powder diffraction and Rietveld refinement. $LiNi_{0.5-x}Co_{2x}Mn_{0.5-x}O_{2}$ samples give single phases of hexagonal layered structures with a space group of R-3m for x = 0.1, 1/6, 0.2, and 0.3. The lattice constants of a and c-axis were decreased with the increase in Co contents in samples. The thickness of MO2 slab was decreased and inter-slab distance was increased with the increase in Co contents in $LiNi_{0.5-x}Co_{2x}Mn_{0.5-x}O_{2}$. According to XPS analysis, the valence states of Mn, Co, and Ni in the sample are mainly +4, +3, and +3, respectively. The discharge capacity of 202 mAh/g at 0.1C-rate in the potential range of 4.7 - 3.0 V was obtained in $LiNi_{0.3}Co_{0.4}Mn_{0.3}O_2$ sample, and $LiNi_{0.4}Co_{0.2}Mn_{0.4}O_2$ gives excellent cycle performance in the same potential range.

• 한국전기전자재료학회논문지
• /
• 제15권1호
• /
• pp.67-74
• /
• 2002

A phosphor for Plasma Display Panel, BaMgAl$_{10}$ O$_{17}$ :Eu$^{2+}$, showing a blue emission band at about 450nm was prepared by a solid-state reaction using BaCO$_3$, $Al_2$O$_3$, MgO, Eu$_2$O$_3$ as starting materials wish flux AlF$_3$. The study of the behaviour of Eu in BAM phosphor was carried out by the photoluminescence spectra and the Rietveld method with X-ray and neutron powder diffraction data to refine the structural parameters such as lattice constants, the valence state of Eu, the preferential site of Mg atom and the site fraction of each atom. The phenomenon of the concentration quenching was abound 2.25~2.3wt% of Eu due to a decrease in the critical distance for energy transfer of inter-atomic Eu. Through the combined Rietveld refinement, R-factor, R$_{wp}$, was 8.11%, and the occupancy of Eu and Mg was 0.0882 and 0.526 at critical concentration. The critical distance of Eu$^{2+}$ in BAM was 18.8$\AA$ at 2.25% Eu of the concentration quenching. Furthermore, c/a ratio was decreased to 3.0wt% and no more change was observed over that concentration. The maximum entropy electron density was found that the modeling of $\beta$-alumina structure in BaMgAl$_{10}$ O$_{17}$ :Eu$^{2+}$correct coincided showing Ba, Eu, O atoms of z= 1/4 mirror plane.e.ane.e.