• Journal of Sensor Science and Technology
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• v.7 no.4
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• pp.234-242
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• 1998

Changes in transmission and thermoluminescent characteristics were used in order to find out the optimum growth condition of CsI single crystal scintillators which were made relatively defect-free using Czochralski method. Impurity distribution in the crystals and the intensity and number of thermoluminescent glow peaks decreased as the process of crystallization was repeated. The direction of crystal growth turned out to be (110), the crystal structure of grown CsI was bee, and its lattice constant was found to be $4.568{\AA}$. The activation energy (trap depths) of CsI:3rd was 0.45 eV and its frequency factor was $5.18{\times}10^5\;sec^{-1}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.97-98
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• 2007

A stoichiometric. mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}$ and $11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $4.87{\times}10^{17}\;cm^{-3}$ and $129\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;335\;K)$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.56-59
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• 2004

HgTe and HgTe/CdTe core-shell structured nanocrystals(NCs) were synthesized in aqueous solution by colloidal method. HgTe and HgTe/CdTe NCs structure showed very similar XRD patterns because of the same lattice constant and crystal structure of both samples. The absorption and photoluminescence(PL) spectrum of the synthesized HgTe NCs revealed the strong exitonic peak in the IR region. The PL spectrum of HgTe/CdTe NCs have the intense peak in about 700nm shorter than that of HgTe by 400nm. The photocurrent measurement of colloidal NCs are performed using He-Ne laser for light source. The photocurrent of HgTe NCs shows the instant increased current response to light, but HgTe/CdTe NCs revealed a decreased current when lighted to the sample. In the vacuum condition, it shows reverse result that current increased under the illumination of light and it is thought that the molecules like the hydro-oxygen gas in the air give an important effect on the current mechanism.

• Transactions on Electrical and Electronic Materials
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• v.13 no.1
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• pp.39-42
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• 2012

To study the physical and chemical properties, solid solutions of $(Sr_{1-x}Ba_x)NdFe{^{3+}}_{1-\tau}Fe{^{4+}}_{\tau}O_{4-y}$ system with x=0.0(SBN-0), 0.1(SBN-1), 0.2(SBN-2) and 0.3(SBN-3) were synthesized in air at 1,473 K and annealed in air at 1,073 K for 24 h. X-ray powder diffraction assured that the four samples had tetragonal symmetries (I4/mmm). Their lattice volumes increased gradually with x values. Nonstoichiometric chemical formulas were formulated using the data such as $\tau$(amount of $Fe^{4+}$ ion) and y(oxygen deficiency) values using Mohr salt analysis. It was found out that all the four samples had excessive oxygen (4-y>4.0). All the samples started to lose some of their oxygen at around 613K(TG/DTA thermal analysis). They exhibited semiconductivities in the temperature range of around 283-1173K. All the four specimens had sufficient tensile strength to endure the force of 19.6 N (2 kg of weights) and the conductivity values of the ECIAs which were painted on pieces of glass with the area of $150mm^2$ ($10mm{\times}15mm$) and it was in the order of ECIA-0${\rightarrow}$ECIA-1${\rightarrow}$ECIA-2${\rightarrow}$ECIA-3 at a constant temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.167-170
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• 2004

The stochiometric mix of evaporating materials for the $CuGaT_2$ single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuGaTe_2$ polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were 6.025 ${\AA}$ and 11.931 ${\AA}$, respectively. To obtain the single crystal thin films, $CuGaTe_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $670^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is $2.1{\mu}m$. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $CuGaTe_2$ single crystal thin film, we have found that the values of spin orbit coupling ${\Delta}s.o$ and the crystal field splitting ${\Delta}cr$ were $0.079\underline{1}eV$ and $0.246\underline{3}eV$ at 10 K, respectively. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be $0.047\underline{0}eV$ and the dissipation energy of the donor-bound exciton and acceptor-bound exciton to be $0.049\underline{0}eV$, $0.055\underline{8}eV$, respectively.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.778-781
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• 1995

The mixed ferrite $Ni_{x}Co_{1-x}Fe_{2}O_{4}$ have been investigated by X-ray and $M\"{o}ssbauer$ spectoscpy. From the results of X-ray diffraction measurement the structure for this system is spinel, and the lattice constant is in accord with Vegard's law. $M\"{o}ssbauer$ spectra of $Ni_{x}Co_{1-x}Fe_{2}O_{4}$ have been taken at various temperature ranging from 13 to 800 K. The isomer shifts indicate that the valence states of the irons at both A(tetrahedral) and B(octahedral) sithe are found to be in ferric high-spin states. The variation of magnetic hyperfine fields at the A and B sites are explained on the basis on A-B and B-B supertransferred hyperfine interactions. It is found that Debye temperatures for the A and B sites of $CoFe_{2}O_{4}$ and $NiFe_{2}O_{4}$ are found to be ${\theta}_{A}=734{\pm}5K,\;{\theta}_{B}=248{\pm}5K,\;and\;{\theta}_{A}=378{\pm}5K,\;{\theta}_{B}=357{\pm}5K$, respectively. Atomic migration of $Ni_{0.3}Co_{0.7}Fe_{2}O_{4}$ starts near 450 K and increases rapidly with increasing temperature to such a degree that 61 % of the ferric ions at the A site have moved over to the B site by 700 K.

• Korean Journal of Materials Research
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• v.31 no.10
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• pp.552-561
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• 2021

For the purpose of manufacturing a high efficiency TiO₂ photocatalyst, B-doped TiO₂ photocatalysts are synthesized using a plasma electrolytic oxidation method in 0.5 M H₂SO₄ electrolyte with different concentrations of H₃BO₃ as additive. For the B doped TiO₂ layer fabricated from sulfuric electrolyte having a higher concentration of H₃BO₃ additive, the main XRD peaks of (101) and (200) anatase phase shift gradually toward the lower angle direction, indicating volume expansion of the TiO₂ anatase lattice by incorporation of boron, when compared with TiO₂ layers formed in sulfuric acid with lower concentration of additive. Moreover, XPS results indicate that the center of the binding energy peak of B1s increases from 191.45 eV to 191.98 eV, which suggests that most of boron atoms are doped interstitially in the TiO₂ layer rather than substitutionally. The B doped TiO₂ catalyst fabricated in sulfuric electrolyte with 1.0 M H₃BO₃ exhibits enhanced photocurrent response, and high efficiency and rate constant for dye degradation, which is ascribed to the synergistic effect of the new impurity energy band induced by introducing boron to the interstitial site and the improvement of charge transfer reaction.

• Journal of the Korean institute of surface engineering
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• v.54 no.4
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• pp.178-183
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• 2021

The temperature and frequency dependence of the dielectric constant of the BaTiO₃ substituted with two types of donor dopants, Nb⁵⁺ and Ta⁵⁺, respectively, were compared and analyzed. Dielectric specimens of four specific compositions, Ba_0.95Nb_0.05TiO₃, Ba_0.90Nb_0.10TiO₃, Ba_0.95Ta_0.05TiO₃, and Ba_0.90Ta_0.010TiO₃ were prepared by calcining at 1100 ℃ and sintering at 1300 ℃ to have a perovskite structure to measure capacitance. XRD and SEM analysis were used to observe the structure, with particular focus on the integration into the Nb⁵⁺ and Ta⁵⁺ substituted BaTiO₃ crystal lattice. X-ray diffraction peaks in the (200) and (002) planes were observed between 45.10° and 45.45° of the BaTiO₃ solid solution substituted with different fractions of Nb⁵⁺ and Ta⁵⁺. The dielectric properties were analyzed and the relationship between the properties and structure of the substituted BaTiO₃ was established. The fine particles and high density of the substituted BaTiO₃ were maintained like pure BaTiO₃, and in particular, a shift toward the low temperature side of the phase transition temperature range was clearly found, unlike pure BaTiO₃. In addition, the phase transition at a temperature higher than the Curie temperature relatively satisfies the modified Curie-Weiss law.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.11-15
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• 2000

This paper presents a process optimization of antireflection (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a double-layer AR(DLAR) coating of MgFe$_2$/GeO$_2$. We investigated GeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown GeO$_2$ film showed deposition temperature strong dependence. The GeO$_2$ at 400$\^{C}$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgFe$_2$film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04% in the wavelengths ranged from 0.4 ㎛ to 1.1 ㎛. Solar cells with a structure of MgFe$_2$/GeO$_2$/Ag/N$\^$+//p-type Si/P$\^$+//Al were investigated with the without DLAR coatings. We achieved the efficiency of solar cells greater than 15% with 3.12% improvement with DLAR coatings. Further details about MgFe$_2$,GeO$_2$ films, and cell fabrication parameters are presented in this paper.

• International Journal of Internet, Broadcasting and Communication
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• v.16 no.1
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• pp.17-28
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• 2024

As listed as one of the most important requirements for Post-Quantum Cryptography standardization process by National Institute of Standards and Technology, the resistance to various side-channel attacks is considered very critical in deploying cryptosystems in practice. In fact, cryptosystems can easily be broken by side-channel attacks, even though they are considered to be secure in the mathematical point of view. The timing attack(TA) and the simple power analysis attack(SPA) are such side-channel attack methods which can reveal sensitive information by analyzing the timing behavior or the power consumption pattern of cryptographic operations. Thus, appropriate measures against such attacks must carefully be considered in the early stage of cryptosystem's implementation process. The Montgomery multiplier is a commonly used and classical gadget in implementing big-number-based cryptosystems including RSA and ECC. And, as recently proposed as an alternative of building blocks for implementing post quantum cryptography such as lattice-based cryptography, the big-number multiplier including the Montgomery multiplier still plays a role in modern cryptography. However, in spite of its effectiveness and wide-adoption, the multiplier is known to be vulnerable to TA and SPA. And this paper proposes a new countermeasure for the Montgomery multiplier against TA and SPA. Briefly speaking, the new measure first represents a multiplication operand without 0 digits, so the resulting multiplication operation behaves in a very regular manner. Also, the new algorithm removes the extra final reduction (which is intrinsic to the modular multiplication) to make the resulting multiplier more timing-independent. Consequently, the resulting multiplier operates in constant time so that it totally removes any TA and SPA vulnerabilities. Since the proposed method can process multi bits at a time, implementers can also trade-off the performance with the resource usage to get desirable implementation characteristics.