• Title/Summary/Keyword: Lasing

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Nonlinear Absorption in Dithienothiophene-based Chromophores (유기 색소 분자의 비선형 흡수)

  • Park, H.;Kim, H.;E. Kang;Lee, J.;Lee, K.;M. Cha
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.08a
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    • pp.164-165
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    • 2000
  • There has recently been a considerable amount of interest in two-photon(TP) processes because of their applications to 3-D optical data storage and imaging, up-conversion lasing, and optical power limiting. Recently, the role of Dithienothlophene(DTT) as $\pi$-center of two-photon absorption(TPA) molecules was reported to give a large enhancement of TPA, compared with the benzeniods counterparts.$^{[1]}$ In this report, we carried out two experiments to investigate nonlinear optical absorption of the molecules in which central DTT is attached through conjugation to either a D/D or a D/A pair at the ends, forming a D-$\pi$-D(1 and 3) or D-$\pi$-A(2 and 4) sequence(Fig.1). All the samples were prepared in solutions with the same molar concentration. (omitted)

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연속 파장 가변시 현상론적인 비 선형 이득 포화 효과가 다전극 DBR 레이저의 변조 특성에 미치는 영향

  • Lee, S.;Park, N.;Park, H. L.;Choi, W. J.;Han, I. K.;Lee, J. I.;Kang, K. N.
    • Korean Journal of Optics and Photonics
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    • v.4 no.3
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    • pp.301-308
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    • 1993
  • Phenomenological nonlinear gain saturation effect on the modulation characteristics in a multi-electrode DBR laser, when the lasing wavelength changes, continuously is analized theoretically. FM efficiency, 3 dB bandwidth, and resonance frequency decrease with increasing bias current to the passive section, except increasing the flat FM response. It is found that the nonlinear gain saturation effect severely affects the modulation characteristics such as FM/IM response, 3 dB bandwidth, resonance frequency and CPR, but hardly affects the behavior of continuous frequency tuning.

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Nanotextured Si Solar Cells on Microtextured Pyramidal Surfaces by Silver-assisted Chemical Etching Process

  • Parida, Bhaskar;Choi, Jaeho;Palei, Srikanta;Kim, Keunjoo;Kwak, Seung Jong
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.4
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    • pp.212-220
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    • 2015
  • We investigated nanotextured Si solar cells using the silver-assisted chemical etching process. The nanotexturing process is very sensitive to the concentration of chemical etching solution. The high concentration process results in a nanowire formation for the nanosurfaces and causes severe surface damage to the top region of the micropyramids. These nanowires show excellent light absorption in photoreflectance spectra and radiative light emission in photoluminescence spectra. However, the low concentration process forms a nano-roughened surface and provides high minority carrier lifetimes. The nano-roughened surfaces of the samples show the improved electrical cell properties of quantum efficiency, conversion efficiency, and cell fill factor due to the reduction in the formation of the over-doped dead layer.

Magnetic Properties of Polycrystalline ${BaFe_{12}{O_{19}$ Films Grown by a Pulsed Laser Ablation Technique

  • Sang Won Kim;Choong Jin Yang
    • Journal of Magnetics
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    • v.1 no.1
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    • pp.46-50
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    • 1996
  • Highly oriented ${BaFe_{12}{O_{19}$ films were obtained by a KrF excimer laser ablation technique using (110)$(012){Al_2}{O_3}$(001)$(012){Al_2}{O_3}$ and $(012){Al_2}{O_3}$ substrates, respectively.The degree of alignment of more than 95% were achieved for (100) on (110)$(012){Al_2}{O_3}$ and (001)$(001){Al_2}{O_3}$ planes, and heteroepitaxial films of (114) on (012)$(012){Al_2}{O_3}$were possible to be grown with a lasing energy density of 6.67 J/$cm^2$ at an oxygen partial pressure ${PO_2}$ of 900 mTorr. The best magnetic properties were obtained from the as-deposited films at the substrate temperature of $700^{\circ}C$, and post annealing treatment was not needed to enhance the magnetic properties. Experimentally saturated magnetization ($4_pi M_S$) of 3600~3800 Gauss and coercivities $(H_c)$ of 3050~3080 Oe, which approach 85% of those of Ba-ferrite bulk composed of single domain particles, were obtained in this study.

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The CW lasing characteristics of a Cr:LiSAF laser pumped by semiconductor lasers (반도체 레이저에 의해 펌핑되는 Cr:LiSAF 레이저의 연속 발진 특성)

  • 윤장한;박종대;조창호;이재형;장준성
    • Korean Journal of Optics and Photonics
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    • v.8 no.1
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    • pp.47-51
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    • 1997
  • A Cr:LiSAF laser pumped by semiconductor lasers was constructed. The pumping laser was a high-power semiconductor laser (SDL 7432-H1) of wavelength 674 nm and maximum power of 500 mW. The laser crystal was a Cr:LiSAF of plano-Brewster shape with 3% Cr3+ion concentration and 3 mm in length. The plane facet of the crystal was coated to get the maximum transmittance of pupmping laser and maximu reflection over the 800 - 880 nm bandwidth. V-shaped resonator was used to compensate the astigmatism induced by the crystal. The output power of the Cr:LiSAF laser was 19.4 mW at the pumping power of 290 mW. The wavelength was tuned by a steep dive-angled birefringent filter from 840 nm to 880 nm and the characteristics of the filter were agreed well with a theory.

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The output characteristics of Ti:Sapphire laser pumped by dense plasma light (고밀도 플라즈마 광에 의한 Ti:SAPPHIRE 레이저의 동작)

  • 허서구;양호근;김명환;손연규;윤지홍
    • Korean Journal of Optics and Photonics
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    • v.10 no.2
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    • pp.157-161
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    • 1999
  • A Ti:Sapphire laser pumped by the HCP has been designed and fabricated to study the optimal pumping conditions for lasing. The fluorescence energy converter LD-490 has been used. The result showed that the threshold energy of Ti:Sapphire laser is 1.39 KJ and the best efficiency is $7.13{\times}10^{-3}$% at the concentration $1.0{times}10^{-3}$ Mol/l of LD-490 dye. However, the efficiencies were decreased with the decrease of dye concentrations. The maximum output energy was obtained at 50 Torr Ar pressure, when the input voltage was 15 kV. As a convert dye, BBQ, was added to LD-490 with the rate of 1:1, the output energy was increased, whereas the thereshold energy was decreased as 1.17 kJ.

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Fabrication process and device characterization of distributed feedback InGaAsP/InP laser diodes for optical fiber communication module (광통신 모듈용 분포 귀환형 InGaAsP/InP 레이저 다이오드 제작 및 소자 특성평가)

  • Jeon, Kyung-Nam;Kim, Keun-Joo
    • Journal of the Semiconductor & Display Technology
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    • v.10 no.4
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    • pp.131-138
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    • 2011
  • We fabricated distributed feedback InGaAsP/InP laser diodes for optical fiber communication module and characterized the lasing properties in continuous wave operation. The active layer of 7-period InGaAsP(1.127 eV)/InGaAsP(0.954 eV) multi-quantum well structure was grown by the metal-organic chemical vapor deposition. The grating for waveguide was also fabricated by the implementation of the Mach-Zehender holographic method of two laser beams interference of He- Cd laser and the fabricated laser diode has the dimension of the laser length of $400{\mu}m$ and the ridge width of $1.2{\mu}m$. The laser diode shows the threshold current of 3.59 mA, the threshold voltage of 1.059 V. For the room-temperature operation with the current of 13.54 mA and the voltage of 1.12 V, the peak wavelength is about 1309.70 nm and optical power is 13.254 mW.

Impact of Booster Section Length on the Performance of Linear Cavity Brillouin-Erbium Fiber Laser

  • Al-Mashhadani, Thamer Fahad;Jamaludin, Md. Zaini;Al-Mansoori, Mohammed Hayder;Abdullah, Fairuz;Abbas, Abdulla Khudair
    • Journal of the Optical Society of Korea
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    • v.18 no.2
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    • pp.162-166
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    • 2014
  • The impact of booster section length made from passive erbium-doped fiber (EDF) on the L-band multiwavelength Brillouin-Erbium fiber laser (MBEFL) is studied experimentally in this paper. The influence on the performance of MBEFL in term of number of generated Stokes lines, tuning range and lasing threshold were investigated. A comparison was made between MBEFL without a booster section and with booster sections of different lengths. Through comparative study and at fixed BP power and 100mW of 1480 pump power, longer passive EDF length of 5m exhibits the highest average number of Stokes lines of 23 with tuning range of 14nm. In contrast, shorter passive EDF length of 1m shows the highest tuning range of 17nm and an average number of 21 Stokes lines.

Temperature Dependence of the Gain Spectrum of a Quantum Well Laser (양자우물 레이저의 이득 곡선의 온도 의존성)

  • 김동철;유건호;박종대;김태환
    • Korean Journal of Optics and Photonics
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    • v.6 no.4
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    • pp.302-309
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    • 1995
  • We desinged a lattice-matched InGaAs/lnGaAsP quantum well laser that lases at $1.55{\mu}m$ at room temperature, and calculated the gain spectrum as a function of injected carrier density and temperature. For the calculation of band structures and momentum matrix elements, we used a transfer JIlatrix method based on a block-diagonalized 8x8 second-order Ii$.$ P Hamiltonian. This lattice-matched quantum well lases in transverse electric mode. As the temperature increases, the lasing wavelength gets longer, the transparency carrier density increases, and the differential gain is reduced. The temperature dependence of the gain spectrum comes from the temperature dependence of the band structure and that of the Fermi function, and the latter contributes dominantly.nantly.

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Development of an Ejector System for Operating of Chemical Lasers (III) - Development and Performance Validation of a Full-Scale Ejector System for High Power Chemical Lasers - (화학레이저 구동용 이젝터 시스템 개발 (III) - 고출력 화학레이저용 실물 크기의 이젝터 시스템 개발 및 성능 검증 -)

  • Kim, Se-Hoon;Jin, Jung-kun;Kwon, Se-Jin
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.29 no.1 s.232
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    • pp.9-15
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    • 2005
  • From the geometric parameter study, an optimal ejector design procedure of pressure recovery system for chemical lasers was acquired. For given primary flow reservoir conditions, an up-scaled ejector was designed and manufactured. In the performance test, secondary mass flow rate of 100g/s air was entrained satisfying the design secondary pressure, $40{\sim}50torr$. Performance validation of a supersonic ejector system along with an investigation of effects of supersonic diffuser was conducted. Placement of the diffuser at the secondary inlet further reduced diffuser upstream pressure to 7torr. Lastly, the duplicate of apparatus (air 500g/s secondary mass flow rate each) was built and connected in parallel to assess proportionality behavior on a system to handle larger mass flow rate. Test and comparison of the parallel unit demonstrated the secondary mass flow rate was proportional to the number of individual units that were brought together maintaining the lasing pressure.