• Title/Summary/Keyword: Laser irradiation

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Clinical Application of Endoscopic Laser Assisted Supraglottic Partial Laryngectomy in Early Supraglottic Cancer (초기 상후두암종에서 레이저를 이용한 내시경하 상후두부분절제술의 적용)

  • Choi Jong-Duck;Kwon Kee-Hwan;Oh Joon-Hwan;Han Seung-Hoon;Lee Seung-Hoon;Choi Geon
    • Korean Journal of Head & Neck Oncology
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    • v.14 no.2
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    • pp.164-168
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    • 1998
  • Background: Supraglottis and glottis have a different embryologic origin. Supraglottic cancer is characterized by high incidence of cervical lymph node metastasis at initial diagnosis, and favored surgical management of the early supraglottic cancer was partial supraglottic laryngectomy, however the procedure resulted in frequent incidences of postsurgical aspiration and voice disabilities. Objectives: We retrospectively analyzed the problems and the advantages of the endoscopic laser assisted supraglottic partial laryngectomy as a part of surgical management for early supraglottic cancer. Materials and Methods: During the past nine years 25 cases of supraglottic cancer(Tl 10 cases, T2 15 cases) were treated by tracheotomy and laser assisted supraglottic partial laryngectomy(KTP532, 15 Watt, continuous type) and in 10 cases with cervical lymph node metastasis, they were additionally managed by neck dissection one week later, and all cases received postoperative irradiation therapy. Results: At present, 19 cases are alive with no evidence of disease. During the follow up period total of six cases(primary failure: three cases, nodal failure: three cases) were recurred. In relation to tumor staging, One of the 10 Tl cases and two of the 15 T2 cases recurred showing 88% locoregional recurrence rate for early supraglottic cancer. Postoperative com-plication included bleeding in three cases who were controlled by electrocautery under general anesthsia, one case of longstanding aspiration and two cases of laryngeal stenosis as a delayed complication. Conclusion: High control rate suggests that the endoscopic laser assisted supraglottic partial laryngectomy may be a good initial management method for early supraglottic cancer, however it is difficult to determine the resection margin, therefore, accurate tumor staging must be done prior to surgery. In order to prepare for postoperative bleeding, edema and aspiration, the tracheotomy must be performed prior to surgery.

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The photoinduced anisotropy(PA) by Ag polarized-photodoping in amorphous chalcogenide thin films (Ag 편광 광도핑에 의한 칼코게나이드 박막의 광유기 이방성(PA))

  • 장선주;여철호;박정일;정홍배
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.6
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    • pp.533-537
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    • 2000
  • It was known that chalcogenide glasses have the superior property of the photoinduced anisotropy(PA). In this study we observed the phenomenon of Ag polarized-photodoping in chalcogenide As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ and the double-layer of Ag doped As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ thin film using the irradiation with the polarized He-Ne laser light. The Ag polarized-photodoping results in reducing the time of saturation anisotorpy and increasing the sensitivity of linearly anisotropy intensity up to maximum 220% The Ag polrized-photodoping shows improvement of the photoinduced anisotropy property in polarized photodoping of the chalcogenide thin film. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.in film.ilm.

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Analysis of Level Characteristics of 630nm Light Emitting Diode Module (630nm Light Emitting Diode 모듈의 레벨 특성 평가)

  • Kim, Tae-Gon;Cheon, Min-Woo;Park, Yong-Pil;Kim, Seong-Hwan;Song, Chang-Hun;Kim, Young-Su
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.347-348
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    • 2006
  • This paper performed the basic study for developing the Photodynamic Therapy Equipment for medical treatment. The equipment have been manufactured by using the High Bright Light Emitting Diode and TLC5941 integrated circuit. As a result, 630nm Light Emitting Diode Module was made for the optimization of irradiation condition. And we confirmed the current change according to increase of the level of Light Emitting Diode Module.

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Characteristics of Surface Roughness as a Film Thickness and Planarization of SLS Poly-Si Films

  • Sohn, Choong-Yong;Kim, Yong-Hae;Ko, Young-Wook;Chung, Choong-Heui;Hwang, Chi-Sun;Song, Yoon-Song;Lee, Jin-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.683-685
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    • 2003
  • We report on a surface planarization process that produces more planar surface than previous sequential lateral solidification crystallized poly silicon films. By applying the single shot laser irradiation with optimum energy density ($(817mJ/cm^{2})$ on the ridge area after SLS crystallization, the ridge height can be decreased.

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Effects of Low Incident Energy Levels of Infrared Laser Irradiation on Healing of Infected Open Skin Wounds in Rats (백서 연조직의 감염창상에 대한 저출력레이저조사시 치유효과에 관한 실험적 연구)

  • Phil-Yeon Lee;Ki-Suk Kim
    • Journal of Oral Medicine and Pain
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    • v.17 no.2
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    • pp.109-117
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    • 1992
  • 저출력레이저는 인체조직에 biostimulation effects를 가지므로 구강주위에 발생하는 여려가지 질병에 대한 저출력레이저광의 효과에 관하여 많은 연구가 시도되고 있으며 또한 치료에 응용되고 있다. 감염창상에 저출력레이저 조사시 조직치유의 기전이 세균 성장에 의한 조직손상보다 주위 정상조직의 biostimulation effects가 우세하기 때문이라는 가설을 확인하고저 본 연구를 시행하였다. 백서 7마리를 레이저 조사군과 대조군으로 나누어 감염창상의 면적차이를 비교하여 다음고 같은 결론을 얻었다. 1. 저출력레이저 조사군에서 창상수축율이 현저히 높았다. 2. 부종의 빈도는 저출력레이저 조사시 뚜렷하게 감소하였다. 위의 사실로 보아 저출력레이저 조사시 감염창상의 치유촉진은 주위 정상조직의 biostimulation effect가 세균증식에 의한 조직의 손상보다 우세하기 때문이라는 가설을 확인할 수 있었다.

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Characteristics of the photoinduced anisotropy(PA) in Ag/AsGeSeS multilayer thin films (Ag/AsGeSeS 다층박막의 광유기 이방성(PA) 특성)

  • Park, Jong-Hwa;Na, Sun-Woong;Yeo, Cheol-Ho;Park, Jeong-Il;Lee, Young-Jong;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.362-365
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    • 2001
  • The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layer. Mutilayer structures formed by alternating metal(Ag) a chalcogenide$(As_{40}Ge_{10}Se_{15}S_{35})$. Such multilayer structures have a greater sensitivity to illumination am larger dichroism in comparison the conventional double layer structure. Also new phenomena are discovered. These results will be show a capability of new method that suggested more improvement of photoinduced anisotropy property.

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Lateral Diffusion of Boron Ions Implanted in The Amorphous Si Film On Silicon Oxide Film During Excimer Laser Irradiation (비정질 실리콘 박막에서 엑시머 레이저에 의한 붕소이온의 수평확산)

  • Park, Soo-Jeong;Lee, Min-Cheol;Kang, Su-Hyuk;Han, Min-Koo
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1612-1614
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    • 2002
  • 본 논문에서는 엑시머 레이저 조사에 의한 이온 농도의 분포 변화를 알아보기 위해 붕소 이온이 선택적으로 주입된 비정질 실리콘 박막 위에 XeCl (${\lambda}$=308nm) 엑시머 레이저를 조사하여 붕소이온의 수평 확산 현상을 관찰하였다. 도핑 농도의 분포를 알아보기 위해 불산/질산 용액에 의한 고농도 도핑 영역의 습식 식각을 이용하여 약 $10^{18}/cm^3$ 이하의 붕소이온을 가지는 실리콘 박막의 형태를 전자주사 현미경을 이용해서 관찰하였다. 실험 결과, $200mJ/cm^2$의 레이저 에너지가 조사될 경우, 약 100nm의 수평 확산이 일어났음을 확인 할 수 있었다.

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Radiotherapy in Kimura's Disesse -Case Report and Review of Literatures- (Kimura's Disease의 방사선치료 -증례보고 및 문헌고찰-)

  • Huh, Gil-Cha;Kang, Seung-Hee;Suh, Hyun-Suk
    • Radiation Oncology Journal
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    • v.12 no.1
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    • pp.67-71
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    • 1994
  • Kimura's disease is a rare disorder which predominantly involves the head and neck region can cause eosinophilia in peripheral blood. It has been treated with steroids, surgical excision, irradiation, cryotherapy, and laser. The lesions have a tendency to recur after steroid and surgery. We reviewed 2 patients with Kimura's disease who recurred. because they were resistant steroid therapy and surgery, and treated succesfully conventional radiation therapy.

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Photovoltaic characteristics of Si quantum dots solar cells

  • Ko, Won-Bae;Lee, Jun-Seok;Lee, Sang-Hyo;Cha, Seung-Nam;Hong, Jin-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.489-489
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    • 2011
  • The effect of Si quantum dots for solar cell appications was investigated. The 5 ~ 10 nm Si nanoparticle was fabricated on p-type single and poly crystalline wafer by magnetron sputtering and laser irradiation process. Scanning electron microscopy (SEM), atomic force measurement (AFM) and transmission electron microscopy (TEM) images showed that the Si QDs array were clearly embedded in insulating layer ($SiO_2$). Photoluminesence (PL) measurements reliably exhibited bandgap transitions with every size of Si QDs. The photo-current measurements were showed different result with size of QD and number of superlattice.

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