• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.490-493
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• 2003

We have carried out two-beam interference experiment to form holographic grating on amorphous $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double-layer. In this study holographic grating formed using He-Ne laser(632.8nm) under non-polarization state and p-polarization state and we confirm that the diffraction efficiency depend on thickness of Ag. The diffraction efficiency was obtained by first order intensity. We got the maximum diffraction efficiency that thickness of Ag was $600{\AA}$. The maximum diffraction efficiency was 13.5% in (P:P) polarization state.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.8
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• pp.387-391
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• 2006

The Ag photodoping effect in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin films for holographic recording has been investigated using a He-Ne laser (${\lambda}$=632.8 nm). The chalcogenide films thickness prepared in the present work were thinner in comparison with the penetration depth of recording light ($d_p=1.66{\mu}m$). It exhibits a tendency of the variation of the diffraction efficiency (${\eta}$) in amorphous chalcogende films, independently of the Ag photodoping. That is, ${\eta}$ increases rapidly at the beginning of the recording process and reaches the maximum (${\eta}_{max}$) and slowly decreases slowly with the exposed time. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its maximum peak among the films with d = 40, 80, 150, 300, and 633 nm is observed 0.083% at d = 150 nm (approximately 1/2 ${\Delta}n$), where ${\Delta}$n is the refractive index of chalcogenide thin film (${\Delta}n=2.0$). The ${\eta}$ is largely enhanced by Ag photodoping into the chakogenides. In particular, the value of ${\eta}_{max}$ in a bilayer of 10-nm-thick Ag/150-nm-thick $As_{40}Ge_{10}Se_{15}S_{35}$ film is about 1.6%, which corresponds to ${\sim}20$ times larger than that of the single-layer $As_{40}Ge_{10}Se_{15}S_{35}$ thin film (without Ag). And we obtained the diffraction pattern according to the formation of (P:P) polarization holographic grating using Mask pattern and SLM.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.5
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• pp.132-141
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• 1996

The pixelated phase grating has been studied as a kind of diffraction gratings splitting and input beam into multiple spots. It consists of regular size cells which produce phase delays, and each cell provokes the phase delay up to sixteen levels. We have compared and analyzed the characteristics of multi-level phase gratings, laying streess on efficiency and resulted pattern. Experimental resutls obtained form fabricated grating have been presented, and the real-time method using a liquid-crystal spatial light modulator has been demonstrated through experiments. Gratings making meams with specific intensities have been designed and optical images have been generated by them. In order to specific intensities have been designed and optical images have been genrated by them. In order to decide the phase delay of each cell, optimization conditon consists of diffraction efficiency and target values. One period of phase gratings fabricated with surface relief was less than 256${\mu}m{\times}256{\mu}m$ and size of each cell was 1${\mu}m{\times}1{\mu}m$ surface relief grating has been made by coating photoresist on the glass plate, writing information pattern by Ar laser and developing it. in the experiment for real-tiem processing liquid-crystal display of epson video projector has been used.

• Korean Journal of Optics and Photonics
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• v.21 no.1
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• pp.6-11
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• 2010

Fluorescent photopolymer film was prepared with composition containing acrylate monomer, binder, a visible light sensitive photo initiator, and fluorescent anthracene polymer. A fluorescent grating pattern was inscribed on the photopolymer film using a 2-beam coupling method. A 514 nm laser was coupled to generate a beam-interference pattern. A highly fluorescent diffractive line pattern was formed on the fluorescent photopolymer within 30 sec. of exposure. The fluorescence intensity was highly enhanced in the patterned area, possibly due to the change in the environment of the fluorescent polymers by the photo-polymerization of monomers. Under a photo-mask, a gap electrode pattern was formed of fluorescent gratings with a sub-micron scale, which was matched well to the calculated value ($2.5\;{\mu}m$ and $0.6\;{\mu}m$) based on the refractive index of the photopolymer and beam incident angle ($3.4^{\circ}$, $15^{\circ}$) to the photopolymer surface.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.1
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• pp.6-10
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• 2001

In this study, we investigated the optical properties of sub-wavelength a-Si thin film transmission gratings, especially the polarization effect, the phase difference and the birefringence by using linearly polarized He-Ne laser beam (632.8nm). The a-Si transmission grating of the thickness $of < 0.1 \mum$ with four-type period($\Lambda = 0.4 \mum and 0.6 \mum$ for sub-wavelength and $\Lambda = 1.0 \mum and 1.4 \mum$ for above-wavelength) on quartz substrates have been fabricated using 50 KeV Ga+ Focused-Ion-Beam(FIB) Milling and $CF_4$Reactive-Ion-Etching(RIE) method. Finally, we obtained the trating array of a-Si thin film with a period $0.4 \mum, 0.6 \mum, 1.0 \mum, 1.4 \mum$ which have nearly equal finger spacing and width, sucessfully. Especially, for gratings with $\Lambda = 0.6 \mum(linewidth=0.25 \mum, linespace=0.35\mum), the \etamax at \theta_в=17.0^{\circ}$ is estimated to be 96%. As the results, we believe that the sub-wavelength grating arrayed a-Si thin film has the applicability as the optical device and components.

• Korean Journal of Optics and Photonics
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• v.22 no.5
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• pp.207-213
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• 2011

We propose a new method to measure the phase errors of an AWG(arrayed waveguide grating) through Monte-Carlo analysis. In the frequency domain method, we used the Monte-Carlo method to fit the theory to the experimental results. The phase and amplitude values are obtained from the fitted theory. To verify our method, we carried out a simulation. Some phase errors were included to make a virtual interferogram and we measured the actual AWG phase errors from it by our method. The results show that our method gives good results if the laser tuning range is larger than 1.7 times of the AWG FSR(free spectral range) and if the phase errors are within ${\pm}50^{\circ}$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.10
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• pp.1980-1986
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• 2016

In this study, we studied the gamma-radiation effect of fiber Bragg gratings (FBGs) on the high temperature annealing condition after grating inscription using a KrF UV laser (248 nm). The FBGs were fabricated in a different annealing temperature using the same commercial Ge-doped silica core fiber (SMF-28e) and exposed to gamma-radiation up to a dose of 31 kGy at the dose rate of 115 Gy/min. The high temperature annealing procedure for grating stabilization was applied to change the radiation sensitivity of the FBGs. According to the experimental data and analysis results, the gratings that were stabilized at different temperatures at 100, 150 and $200^{\circ}C$ have clearly shown that exposure to higher temperatures increases their radiation sensitivity. The radiation-induced Bragg wavelength shift (BWS) was shown a difference of up to about a factor of two depending on the annealing temperature conditions of the gratings.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.10
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• pp.461-466
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• 2006

In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolutioniphotodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film and $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, $E_g\;_{opt}$ of the film, i. e., an exposure of sub-bandgap light $(h{\upsilon} under P-polarization. As the results, we found that the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film was more higher than that on single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Also, we obtained that the maximum diffraction efficiency was 0.27 %, 1,000 sec on $As_{40}Ge_{10}Se_{15}S_{35}\;(1{\mu}m)/Ag$ (10 nm) double layer structure thin film by (P: P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.3
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• pp.145-152
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• 1989

Volume phase diffraction grating is formed in 5${mu}m$ Agfa 8E75 photographic emulsion film using He-Ne laser. It is dependent on the chemical processing rather than materials themselves that high diffraction efficiency can obtained in silver halide emulsions. With potassium dichromate bleach and alcohol drying, overall efficiency of 71% (81% after allowing for reflection at the two surfaces) has been achieved at an exposure of 180${mu}J/cm^2.$ Dichromate cross-linkage and air void by rapid dehydration increase refractive index modulation depth. The grating is swollen, which is newly identified by Scanning Electronic Microscope(SEM) photography, and it causes on-Bragg at larger angle than the recording angle. It is pointed out that controlling the emulsion thickness has an important role as a potential source for high diffraction efficiency.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.46 no.1
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• pp.43-48
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• 2009

We constructed a simple wavelength readout system for a tunable fiber laser which was used for a fiber Bragg grating sensor array system. A quadrature sampling method was used to demodulate wavelength variations of the tunable laser which consisted of a SOA(semi-conductor optical amplifier) and a fiber-optic Fabry-Perot filter. Internal triggers, which have a 90 degree phase period, have been generated by using a double-pass Mach-Zehnder interferometer. From Lissajous plots with quadrature sampled data, a mean phase error of ${\sim}2.51$ mrad was obtained. From the wavelength readout experiments, an accurate and fast linear wavelength demodulation has been confirmed.