• Macromolecular Research
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• v.10 no.5
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• pp.286-290
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• 2002

The FT-Raman spectra of trans-polyacetylene films doped lightly with iodine were obtained with the 1320-nm laser line. The observed Raman bands are attributed to positively charged domains created by acceptor doping. The observed Raman wavenumbers of the V$_2$, (CC stretch), V$_3$, and V$_4$ bands (mixed of CC stretch and CH in-plan bending) of iodine-doped form are slightly higher than those of the corresponding bands of pristine trans-polyacetylene, whereas the contrary is the case for V$_1$, and (C=C stretch) of iodine-doped form. In particular, these upshifts of the V$_2$ and V$_3$ bands are distinguished from the downshifts of these bands in donor doping. The origin of doping induced Raman bands is discussed in terms of solitons and polarons.

• Journal of Information Display
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• v.5 no.1
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• pp.1-6
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• 2004

Ion shower doping with a main ion source of $P_2H_x$ using a source gas mixture of $PH_3/H_2$ was conducted on excimer-laser- annealed (ELA) poly-Si. The crystallinity of the as-implanted samples was measured using a UV-transmittance. The measured value of as-implanted damage was found to correlate well with the one calculated through/obtained from TRIM-code simulation. The sheet resistance was found to decrease as the acceleration voltage increased from 1 kV to 15 kV at a doping time of 1 min. However, it increases as the acceleration voltage increases under severe doping conditions. Uncured damage after furnace annealing is responsible for the rise in sheet resistance.

• Journal of Sensor Science and Technology
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• v.18 no.3
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• pp.207-209
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• 2009

This paper describes the characteristics of poly 3C-SiC micro resonators with $3{\times}10^{17}{\sim}1{\times}10^{19}cm^{-3}$ doping concentrations. The 1.2 ${\mu}m$ thick cantilever and the 0.4 ${\mu}m$ thick doubly clamped beam resonators with different lengths were fabricated using poly 3C-SiC thin films. The characteristics of poly 3C-SiC micro resonators were evaluated by quartz and a laser vibrometer in vacuum at room temperature. The resonant frequencies of micro resonators decreased with doping concentrations owing to reduction in the Young's modulus of poly 3C-SiC thin films. It was confirmed that the resonant frequencies of poly 3C-SiC resonators are controllable by doping concentrations. Therefore, poly 3C-SiC resonators could be applied to MEMS devices and bio/chemical sensor applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.262-263
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• 2007

Effect of co-doping on optical and electrical properties of $SnO_2$ based thin films were studied. $SnO_2$ ceramic targets with up to 50mol% $CuSb_2O_6$ were prepared by sintering mixed-oxide compact in the temperature range of $1100^{\circ}C{\sim}1300^{\circ}C$ in air. Thin films were then deposited onto glass substrates by pulsed laser deposition where substrate temperature was maintained in the range of $500{\sim}650^{\circ}C$ with oxygen pressure of 3m~7.5mTorr and energy density of $1Jcm^{-2}$. It was found that with the increase amount of dopant, the electrical properties of thin films tended to improve with the smallest resistivity value obtained at about 8mol% doping, further increase, however, usually impaired the optical transmission in the visible range.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.357-357
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• 2012

The doping process of the solar cell has been used by furnace or laser. But these equipment are so expensive as well as those need high maintenance costs and production costs. The atmospheric pressure plasma doping process can enable to the cost reduction. Moreover the atmospheric pressure plasma can do the selective doping, this means is that the atmospheric pressure plasma regulates the junction depth and doping concentration. In this study, we analysis the atmospheric pressure plasma doping compared to the conventional furnace doping. the single crystal silicon wafer doped with dopant forms a P-N junction by using the atmospheric pressure plasma. We use a P type wafer and it is doped by controlling the plasma process time and concentration of dopant and plasma intensity. We measure the wafer's doping concentration and depth by using Secondary Ion Mass Spectrometry (SIMS), and we use the Hall measurement because of investigating the carrier concentration and sheet resistance. We also analysis the composed element of the surface structure by using X-ray photoelectron spectroscopy (XPS), and we confirm the structure of the doped section by using Scanning electron microscope (SEM), we also generally grasp the carrier life time through using microwave detected photoconductive decay (u-PCD). As the result of experiment, we confirm that the electrical character of the atmospheric pressure plasma doping is similar with the electrical character of the conventional furnace doping.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1131-1134
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• 2003

A low temperature doping technique has been studied for application in poly-Si TFT's on plastic substrates. Heavily-doped amorphous silicon layers were deposited on poly-Si and the dopant atoms were driven in by subsequent excimer laser annealing. The entire process was carried out under a substrate temperature of $120^{\circ}C$, and a sheet resistance as low as $300 {\Omega}/sq$. was obtained.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.10-17
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• 1998

The characteristics of the lithium niobate single ($LiNbO_3$) crystals grown doped with $Mg^{2+}$ or $Zn^{2+}$ ions, which are well-known as the ions improving the photorefractive resistance of $LiNbO_3$, have been analysed in comparision with those of undoped $LiNbO_3$ crystal. In particular, $Zn^{2+}$ doping was estimated to increase the photorefractive resistance indirectly from the optical and electrical properties. Therefore, the $LiNbO_3$ crystals doped with ZnO could be used for high intensive laser device application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.3
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• pp.203-213
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• 2023

Owing to carbon materials' diverse functionalization and versatility, the design and synthesis of carbon-based three-dimensional porous structures have become important foundational research topics across various fields. Among the various methods for producing porous carbon structures, laser-induced graphene (LIG) has garnered attention because of its large surface area, controllable structure, excellent electrical conductivity, scalability, and eco-friendly synthesis process. In addition, recent research results have reported more novel functionalities by advancing further from the unique characteristics of LIG through functionalization or compounding of LIG, making it an attractive material for various applications in electronic devices, sensing, catalysis, and energy storage. This review aims to update the research trends in LIG and its functionalization, providing insights to inspire more interesting studies on functional LIG to expand its potential applications ultimately. Starting with the synthesis method and material characteristics of LIG, we introduce the functionalization of LIG, which is classified into surface modification, heteroatom doping, and hybridization based on the interaction mechanism. Finally, we summarize and discuss the prospects of LIG and its functionalization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.131-131
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• 2009

This paper describes the fabrication and characteristics of polycrystalline (poly) 3C-SiC microresonators with $3{\times}10^{17}{\sim}1{\times}10^{19}cm^{-3}$ in-situ N-doping concentrations. In this work, the crystallinity, carrier concentration and surface morphology of the grown thin films were evaluated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The 1.2 ${\mu}m$ thick cantilvers and the 0.4 ${\mu}m$ thick doubly-clamped beam microresonators with various lengths were implemented using in-situ doping poly 3C-SiC thin films. The characteristics of the poly 3C-SiC microresonators were evaluated using quartz and a laser vibrometer under vacuum at room temperature. The resonant frequencies of the SiC microresonators decreased with doping concentrations owing to the reduction of the Young's modulus of the poly 3C-SiC thin films. It was confirmed that the resonant frequencies of the poly 3C-SiC microresonators are controllable by adjusting the doping concentrations.

• Textile Coloration and Finishing
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• v.35 no.2
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• pp.121-127
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• 2023

In this study, a comprehensive investigation was conducted on the morphological and property changes of laser-induced nanocarbon (LINC) as a function of laser process parameters. LINC was formed on the surfaces of polyimide films with different backbone structures under various process conditions, including laser power, scan speed, and resolution. Three different forms of LINC electrodes (i.e., continuous 3D porous graphene, wooly nanocarbon fibers, line cut) were formed depending on the laser power and scan speed. Furthermore, heteroatom doping induced from the chemical structure of the polyimide during laser patterning was found to be effective in modifying the electrical properties of LINC electrodes. The LINC surfaces exhibited different microstructures depending on the laser beam resolution under constant laser power and scan speed, allowing for controllable surface wettability. The correlation between the chemical structure of the polymer substrate, laser process parameters, and carbonized surface properties in this study is expected to be utilized as fundamental understanding for the manufacturing of next-generation carbon-based electronic devices.