• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.141-141
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• 2009

Blue light-emitting diodes (LEDs), violet laser diodes 같은 광전소자들은 질화물 c-plane 기판위에 소자로 응용되어 이미 상품화 되어 왔다. 그러나 2족-질화물 재료들은 wurtzite 구조를 가지므로 c-plane에 평행한 자연적인 극성을 띌 뿐만 아니라 결정 내부 stress로 인한 압전현상 또한 나타나 큰 내부 전기장을 형성하게 된다. 이렇게 생성된 내부 전기장은 전자와 홀의 재결합 효율을 감소시키고 소자 응용 시 red-shift의 원인이 되곤 한다. 따라서 최근 들어 m-plane(1-100), a-plane (11-20)같은 무극성을 뛰는 기판 위에 소자를 만드는 방법이 각광을 받고 있는 추세다. 그러나 무극성 기판을 소자에 응용 시 Chemical Mechanical Planarization (CMP)에 의한 가공은 반도체 기판으로써 이용하기 위한 필수 불가결의 공정이다. c면(0001) SiC wafer에 대한 연구는 현재 많이 발표가 되어 있으나 무극성면 SiC wafer에 대한 CMP 공정에 대한 연구사례는 없는 실정이다. 본 연구에서는 C면 (0001)으로 성장된 잉곳을 a면(11-20)과 m(1-100)면으로 절단 후, slurry type (KOH-based colloidal silica slurry, NaOCl), 산화제, 연마제등을 변화하여 CMP 공정을 거침으로서 일어나는 기계 화학적 가공 양상에 대하여 알아보았다. 그 후 표면 형상 분석 하기위해 Atomic Force Microscope(AFM)을 사용하였고, 표면 스크레치를 SEM을 이용해서 알아보았다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.236.1-236.1
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• 2014

Compounds of Ga, such as gallium oxide (Ga2O3) and gallium nitride (GaN), are of interest due to its unique properties in semiconductor application. In particular, GaN has the potentially application for optoelectronic device such as light-emitting diodes (LEDs) and laser diodes (LDs) [1]. Nanoparticle is an interesting material due to its unique properties compared to the bulk equivalents. In this report, we develop a synthesizing method for gallium nitride nanoparticle using non-thermal plasma. For gallium source, the gallium is heated by thermal conduction of tungsten boat which is heated by eddy current induced from RF current in antenna. Nitrogen source for nanoparticle synthesis are from inductively coupled plasma with N2 gas. The synthesized nano particles are analyzed using field-emission scanning microscope (FESEM), transmission electron microscope (TEM) and x-ray photoelectron spectroscopy (XPS). The synthesized particles are investigated and discussed in wide range of experiment conditions such as flow rate, pressure and RF power.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.185-185
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• 2011

ZnTe semiconductor is very attractive materials for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. Another application to photovoltaics proved that ZnTe is useful for the production of high-efficiency multi-junction solar cells [2,3]. By using the pulse laser deposition system, ZnTe thin films were deposited on ZnO thin layer, which is grown on (0001) Al2O3substrates. To produce the plasma plume from an ablated ZnO and ZnTe target, a pulsed (10 Hz) YGA:Nd laser with energy density of 95 mJ/$cm^2$ and wavelength of 266 nm by a nonlinear fourth harmonic generator was used. The laser spot focused on the surface of the ZnO and ZnTe target by using an optical lens was approximately 1 mm2. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen gas flow was controlled around 3 sccm by using a mass flow controller system. During the ZnTe deposition, the substrate temperature was $400^{\circ}C$ and the ambient gas pressure was $10^{-2}$ Torr. The structural properties of the samples were analyzed by XRD measurement. The optical properties were investigated by using the photoluminescence spectra obtained with a 325 nm wavelength He-Cd laser. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system.

• 한국광학회지
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• 제32권4호
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• pp.147-152
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• 2021

본 논문에서는 최고 출력 3.0 kW 발진 단일 모드 이터븀(ytterbium, Yb) 첨가 광섬유 레이저에 대해 보고한다. 고출력 광섬유 레이저의 출력을 제한하는 주된 요소인 유도 라만 산란 문턱 값과 광섬유 내 온도 분포를 계산하고 이를 바탕으로 양방향 펌핑 구조의 단일 공진기 Yb 광섬유 레이저 시스템을 제작하였다. 그 결과 4.1 kW의 펌프 출력에서 최고 출력 3.0 kW의 레이저 빔을 얻을 수 있었고, 그때의 기울기 효율은 81.5%로 계산되었다. 최고 출력에서 측정된 출력 빔의 빔질(M²)은 1.26으로 단일 공간 모드 빔 출력 특성을 가지고 있음을 확인하였고, 유도 라만 산란 및 횡모드 불안정 현상은 관측되지 않았다. 본 연구에서 얻은 광섬유 레이저 출력 결과는 지금까지 국내에서 보고된 다이오드 레이저로 펌핑한 광섬유 레이저 출력 중 가장 높은 출력이며, 향후 더 높은 출력을 얻기 위한 방법에 대해 논의하고자 한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.306.1-306.1
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• 2016

ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately $2{\times}10^{-6}Torr$. ZnO thin films were grown on p-Si (100) substrate at oxygen partial pressure from 5mTorr to 40mTorr. Growth temperature of ZnO thin films was set to 773K. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnO target, whose density of laser energy was $10J/cm^2$. Thickness of all the thin films of ZnO was about 300nm. The optical property was characterized by photoluminescence and crystallinity of ZnO was analyzed by X-ray diffraction. For fabrication ZnO/Si heterojunction diodes, indium metal and Al grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. Finally, current-voltage characteristics of the ZnO/Si structure were studied by using Keithly 2600. Under Air Mass 1.5 Global solar simulator with an irradiation intensity of $100mW/cm^2$, the electrical properties of ZnO/Si heterojunction photovoltaic devices were analyzed.

• Current Optics and Photonics
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• 제3권6호
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• pp.583-589
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• 2019

We report experimental results on 940-nm 350-mW AlGaAs/InGaAs transverse single-mode laser diodes (LDs) adopting graded-index separate confinement heterostructures (GRIN-SCH) and p,n-clad asymmetric structures, with improved temperature and small-divergence beam characteristics under high-output-power operation, for a three-dimensional (3D) motion-recognition sensor. The GRIN-SCH design provides good carrier confinement and prevents current leakage by adding a grading layer between cladding and waveguide layers. The asymmetric design, which differs in refractive-index distribution of p-n cladding layers, reduces the divergence angle at high-power operation and widens the transverse mode distribution to decrease the power density around emission facets. At an optical power of 350 mW under continuous-wave (CW) operation, Gaussian narrow far-field patterns (FFP) are measured with the full width at half maximum vertical divergence angle to be 18 degrees. A threshold current (I_th) of 65 mA, slope efficiency (SE) of 0.98 mW/mA, and operating current (I_op) of 400 mA are obtained at room temperature. Also, we could achieve catastrophic optical damage (COD) of 850 mW and long-term reliability of 60℃ with a TO-56 package.

• 한국광학회지
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• 제21권2호
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• pp.74-81
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• 2010

WDM-PON 용 저가형 광원으로 유망한 주입 잠금 패브리-페롯 레이저 다이오드의 특성 해석을 위한 모델링 방법을 제시하였다. 해석 방법으로는 시영역 대신호 모델을 이용하였으며, 계산 결과는 기존의 실험 결과와 유사한 경향을 보임을 확인하였다. 이를 토대로 특정한 파라미터를 가지는 레이저 다이오드 구조에서의 단면 반사율에 따른 동작 특성과 디튜닝, 아이 다이어그램등을 모델링 하였다. 특히 단면 반사율의 값에 따른 부모드 억제율 특성 및 디튜닝의 영향을 살펴보았으며, 주입되는 단면의 반사율이 1% 미만으로 유지되어야 안정된 특성을 얻을 수 있음을 확인하였다. 아이 다이어그램의 경우 155 Mbps 급에서는 손쉽게 아이 열림을 얻을 수 있지만, 1.25 Gbps 급에서는 레이저 다이오드의 활성층 두께 등의 파라미터를 적정화해야 적정한 아이특성을 얻을 수 있음을 보였다.

• 한국근적외분광분석학회:학술대회논문집
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• 한국근적외분광분석학회 2001년도 NIR-2001
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• pp.3123-3123
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• 2001

Near infrared (NIR) spectroscopy has become a widely used method in food and beverage analysis because of its speed, accuracy and the simplicity of sample preparation. One of the basic requirements of NIR instruments is a wide dynamic range if weak, or small, absorption changes or concentrations are to be measured. Thus the instrument must be sufficiently luminous, and efficient, to enable measurements to be made in a reasonably short time, as for some applications (e.g. sorting) short response times are essential. Diode lasers function the same way as lasers but linewidths are not as narrow as typical lasers. In this work an array of seven laser diodes (in the range of 750-1100 nm) with energy outputs of around hundred milliwatts each were combined with a fast diode array spectrometer (400-1100 nm, 1024 pixels, integration time from 3 ms) as detector. Measurements in transmission mode were performed in solutions of sugars in aqueous solutions and in deuteriumoxide. The feasibility of non-destructive measurements in transmission mode was investigated for different fruits and vegetables.

• 대한의용생체공학회:학술대회논문집
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• 대한의용생체공학회 1997년도 춘계학술대회
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• pp.64-67
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• 1997

In the total artificial heart(TAH), a transcutaneous information transmission system(TITS) is vely important to monitor the TAH status and detect the device failure, and repair the possible problems. First of all, the communication channel(skin) and method were simulated in terms of transmittance, scattering, reflection and absorption, then the system was designed with size reduction including low power consumption and reliability compared to the previous one. The informations are transmitted through the skin(approximately 1cm in depth) by frequency modulated near infrared(NIR) pulses using 780nm laser diodes as transmitters and photodiode as receiver with high speed and high spectral sensitivity. The logic high and low frequencies are 3MHz, 1MHz respectively. The system is a bidirectional data link for more than 38.4Kbps data rate, full-duplex with a bit error rate of less than $10^{-5}$.

• 전자공학회논문지A
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• 제30A권10호
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• pp.27-32
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• 1993

Separate-confinement hetero-structure (SCH) broad area Laser Diodes (LD's) were fabricated from $Al_{0.07}$Ga$_{0.93}$/. As single-quantum-well (SQW) grown by metal organic chemical vapor deposition (MOCVD). Under pulsed operation, we obtained maximum output powers of about 0.8watt/facet and 1.83watt/facet from LD's with 60$\mu$m and 160$\mu$m channel width, respectively, without facet coatings. The differential quantum efficiency of the 60$\mu$m wide LD was about 21.7%/facet and its threshold current density was about 1k [A/cm$^{2}$]. The differential quantum efficiency of the 160$\mu$m wide LD was about 25.6%/facet and its threshold current density was about 1k[A/cm$^{2}$]. The minimum threshold current density of 60$\mu$m wide LD's was 620[A/cm$^{2}$] when the cavity length was 603$\mu$m and the minimum threshold current density of 160$\mu$m wide Ld's was 675[A/cm$^{2}$] when the cavity length was 752$\mu$m. The internal quantum efficienty and the internal loss of both LD's were 92.3% and 18.1cm$^{1}$, respectively.