• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.4
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• pp.568-573
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• 1996

The amorphous silicon films deposited by low pressure chemical vapor deposition are crystallized by the various annealing techniques including low-temperature furnace annealing and two-step annealing. Two-step annealing is the combination of furnace annealing at 600 [.deg. C] for 24 h and the sequential furnace annealing at 950 [.deg. C] 1h or the excimer laser annealing. It s found that two-step annealings reduce the in-grain defects significantly without changing the grain boundary structure. The performance of the poly-Si thin film transistors (TFTs) produced by employing the tow-step annealing has been improved significantly compared with those of one-step annealing. (author). 13 refs., 6 figs., 1 tab.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.598-601
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• 2000

We investigated the fabrication of Si nanoparticle and $C_{60}$ thin films by pulsed laser ablation. As a result, we observed visible green photoluminescence spectra in the Si/C$_{60}$ multilayer films after laser annealing. It is considered that this green photoluminescence is occurred from SiC particles, which is produced reaction of Si nanoparticles with $C_{60}$ via laser annealing.ing.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1061-1064
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• 2007

Thin Beam Excimer Laser Annealing is investigated as one possible process enabled by the variable concept of Thin Beam LTPS processing. The structure of the resulting p-Si material is analyzed in terms of grain size distribution, scaling with energy density and overlap, as well as average surface roughness. This process provides similar control and latitude as conventional excimer laser annealing, but reduced average surface roughness and the potential to be scaled to significant productivity levels.

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.2
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• pp.43-47
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• 2003

Lead zirconate titanate (PZT) thin films were fabricated by the pulsed laser ablation deposition (PLAD) method onto Pt/Ti/SiO$_2$/Si substrates. Crystalline phases as well as preferred orientations in PZT films were investigated by X-ray diffraction analysis (XRD). The well-crystallized perovskite phase and the (101) preferred orientation were obtained by two-step annealing at the conditions of $650^{\circ}C$, 1 hour. It was found that the temperature for the pulsed laser ablated PZT films annealed via a two-step annealing process can be reduced 20$0^{\circ}C$ compared to that of the conventional three-step annealing temperature profile for enhancing the transformation of the perovskite phase. The remanent polarization and the coercive field of this film were about 20 $\mu$C/$\textrm{cm}^2$ and 46 kV/cm, while the dielectric constant and loss values measured at 1 KHz were approximately 860 and 0.04, respectively. The interesting phenomena of this film, such as vertical shift in hysteresis curve, are also discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.51-52
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• 2005

Phosphorus doped ZnO thin films on (001) $Al_2O_3$ substrate have been prepared by a pulsed laser deposition (PLD) technique using a Nd:YAG laser. After deposition, phosphorus doped ZnO thin films have been annealed in vacuum, air, nitrogen, and oxygen ambients using pulsed Nd:YAG laser. We report the electrical properties of phosphorus doped ZnO thin films with the variation of the laser annealing conditions for the applications of optoelectronic devices.

• Journal of the Korean Magnetics Society
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• v.14 no.6
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• pp.224-227
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• 2004

We have studied local magnetization reversal by laser annealing in exchange biased NiFe/FeMn bilayer. Local magnetization reversal was performed by using the DPSS laser under external magnetic field of 600G. When the laser illuminated the patterned film with the power of above 300 mW during 15 min, a magnetoresistance (MR) curve with symmetric peaks at the opposite field was obtained due to the local reversal of exchange biasing. The direction of exchange anisotropy in the locally reversed region can be restored by local laser annealing under alternating magnetic field, even if its MR peak was reduced by the damage and interdiffusion. The magnetic domain structure of the locally reversed region was measured by MFM. The new domains were generated by laser annealing near the exposed area.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.70-71
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• 2003

• Journal of the Korean Society for Precision Engineering
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• v.27 no.6
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• pp.32-38
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• 2010

Laser material processing technology is adopted in several industry as alternative process which could overcome weakness and problems of present adopted process, especially semiconductor and display industry. In semiconductor industry, laser photo lithography is doing at front-end level, and cutting, drilling, and marking technology for both wafer and EMC mold package is adopted. Laser cleaning and de-flashing are new rising technology. There are 3 kinds of main display industry which use laser technology - TFT LCD, AMOLED, Touch screen. Laser glass cutting, laser marking, laser direct patterning, laser annealing, laser repairing, laser frit sealing are major application in display industry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.1
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• pp.50-54
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• 2018

In this study, a femtosecond laser pre-annealing technology based on indium zinc oxide (IZO) thin-film transistors (TFTs) was investigated. We demonstrated a stable pre-annealing process to analyze the change in the surface structures of thin-films, and we improved the electrical performance. Furthermore, static and dynamic electrical characteristics of IZO TFTs with n-channel inverters were observed. To investigate the static and dynamic responses of our solution-processed IZO TFTs, simple resistor-load-type inverters were fabricated by connecting a $1-M{\Omega}$ resistor. The femtosecond laser pre-annealing process based on IZO TFTs showed good performance: a field-effect mobility of $3.75cm_2/Vs$, an $I_{on}/I_{off}$ ratio of $1.8{\times}10^5$, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. Our IZO-TFT-based N-MOS inverter performed well at operating voltage, and therefore, is a good candidate for advanced logic circuits and display backplane.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.528-531
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• 2000

Deposition of PZT with UV laser ablatio was applied for realization of thin film sensors and actuators. Deposition rate of more than 20nm/min was attained by pulsed KrF excimer laser deposition, which is fairly better than those obtained by the other methods. Perovskite phase was obtained at room temperature deposition with Fast Atom Beam(FAB) treatment and annealing. Smart MEMS(Micro electro-mechanical system) is now a suject of interest in the field of micro optical devices, micro pumps, AFM cantilever devices etc. It can be fabricated by deposition of PZT thin films and micromachining. PZT films of more than 1 micron thickness is difficult to obtain by conventional methods. This is the reason why we applied excimer laser ablation for thin film deposition. The remanent polarization Pr of 700nm PZT thin film was measured, and the relative dielectric constant was determined to about 900 and the dielectric loss tangent was also measured to be about 0.04. XRD analysis shows that, after annealing at 650 degrees C in 1 hour, the perovskite structure would be formed with some amount of pyrochlore phase, as is the case of the annealing at 750 degrees C in 1 hour.