• Journal of the Optical Society of Korea
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• v.17 no.3
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• pp.262-268
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• 2013

We study the focusing properties of a two-dimensional square-lattice photonic crystal (PC) comprising silica and germanium partitioned cylinders in air background. The finite difference time domain (FDTD) method with periodic boundary condition is utilized to calculate the dispersion band diagram and the FDTD method incorporating the perfectly matched layer boundary condition is employed to simulate the image formation. In contrast to the common square PCs in which the negative refraction effect occurs in the first photonic band without negative phase propagation, in our suggested model system, the frequency with negative refraction exists in the second band and in near-infrared region. In this case, the wave propagates with a negative phase velocity and the evanescent waves can be supported. We also discuss the dependency of the image resolution and its location on surface termination, source location, and slab thickness. According to the simulation results, spatial resolution of the proposed PC lens is below the radiation wavelength.

• The Journal of the Korean dental association
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• v.54 no.12
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• pp.985-995
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• 2016

Titanium (Ti) has been widely used for dental implant due to great biocompatibility and bonding ability against natural alveolar bone. A lot of titanium surface modification has been introduced in dentistry and, among them, methods to introduce micro/nano-roughened surface were considered as clinically approved strategy for accelerating osseointegration of Ti dental implant. To have synergetic effect with topography oriented favors in cell attachment, chair-side surface treatment with reproducibility of micro/nano-topography is introduced as next strategy to further enhance cellular functionalities. Extensive research has been investigated to study the potential of micro/nano-topography preserved chair-side surface treatment for Ti dental implant. This review will discuss ultraviolet, low level of laser therapy and non-thermal atmospheric pressure plasma on Ti dental implant with micro/nano-topography as next generation of surface treatment due to its abilities to induce super-hydrophilicity or biofunctionality without change of topographical cues.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.89-92
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• 2011

Hydrogenated amorphous carbon (a-C:H) films were deposited by plasma enhanced chemical vapor deposition on silicon substrates. a-C:H thin film was irradiated to a typical He-Cd laser to study its emitting properties. The photoluminescence (PL) intensity during the irradiation achieved a maximum value when 2,000 seconds elapsed. Fourier transform infrared measurement revealed a-C:H thin film suffered transformation from a polymer-like to graphite-like phase during laser irradiation. Thermal annealing was done at various temperatures, ranging from room temperature to $400^{\circ}C$ in the atmosphere, to investigate structural changes in a-C:H film by heat generation during the emission. PL intensity of a-C:H thin film increased 1.5 times without apparent structural change, as annealing temperature increased up to $200^{\circ}C$. However, a-C:H film above $200^{\circ}C$ exhibited significant decrease of PL accompanying dehydrogenation. This led to a red shift of the PL peak.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.71-72
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• 2006

플라스틱 기판 위에 유도 결합 플라즈마 화학적 기상 증착장치 (Inductively Coupled Plasma Chemicai Vapor Deposition, ICP-CVD) 를 사용하여 실리콘 산화막 ($SiO_2$)을 증착하고, 엑시머레이저 어널링 (Excimer Laser Annealing, ELA) 과 $N_{2}O$ 플라즈마 전처리를 통해, 전기용량-전압(Capacitance-Voltage, C-V) 특성과 항복 전압장 (Breakdown Voltage Field) 과 같은 전기적 특성을 개선시켰다. 에너지 밀도 $250\;mJ/cm^2$ 의 엑시머 레이저 어닐링은 실리콘 산화막의 평탄 전압 (Flat Band Voltage) 을 0V에 가까이 이동시키고, 유효 산화 전하밀도 (Effective Oxide Charge Density)를 크게 감소시킨다. $N_{2}O$ 플라즈마 전처리를 통해 항복 전압장은 6MV/cm 에서 9 MV/cm 으로 향상된다. 엑시머 레이저 어닐링과 $N_{2}O$ 플라즈마 전처리를 통해 평탄 전압은 -9V 에서 -1.8V 로 향상되고, 유효 전하 밀도 (Effective Charge Density) 는 $400^{\circ}C$에서 TEOS 실리콘 산화막을 증착하는 경우의 유효 전하 밀도 수준까지 감소한다.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.7
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• pp.71-76
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• 2019

The diffusion of the drug component of the inflammatory patch into the living tissue was analyzed by laser induced plasma spectroscopy (LIBS). Calcium element, which is a diffusion catalyst of the drug in the inflammatory analgesic patch, is transferred into the body through the diffusion process of the substance. The test pieces used in the experiment are pig skin tissues which are similar to human skin. As a result, the diffusion coefficient D of the calcium element was found to be average $8.24{\times}10^{-2}({\mu}m^2/s)$. Experimental results showed that the most influential factors on the diffusion of materials were temperature variables.

• Clean Technology
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• v.18 no.3
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• pp.287-294
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• 2012

In this study, performances of two cleaning methods were analyzed and a cleaning system was designed to develop a cleaning process of electronic components to remanufacture old laser copy machine. First, plasma cleaning as a dry cleaning method was executed to test cleaning ability. In cleaning of printed circuit board (PCB) by plasma, some damages were found near the metal parts, and considering the productivity, this method was not adequate for the cleaning of electronic components. With 4 different cleaning agents, ultrasonic cleaning tests were executed to select an optimal cleaning agent, aqueous agents showed superior cleaning performance compared to semi-aqueous and non-aqueous agents. Cleaning with aqueous cleaning agent A and 28 kHz ultrasonic frequency can be completed in 30 sec to 1 min. Finally, an ultrasonic cleaning system was constructed based on the pre-test results. Optimal cleaning conditions of 40 kHz and $50^{\circ}C$ were found in the field test. The productivity and economic efficiency in remanufacturing of laser copy machine are expected to increase by adapting developed ultrasonic cleaning system.

• Analytical Science and Technology
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• v.26 no.4
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• pp.235-244
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• 2013

Detection of halogens using laser-induced breakdown spectroscopy (LIBS) in open air is very difficult since their strong atomic emission lines are located in VUV region. In NIR region, there are other emission lines of halogens through electronic transitions between excited states. However, these lines undergo Stark broadening severely. We report the observation of the emission lines of halogens in laser-induced plasma (LIP) spectra in NIR region using a helium gas flow. Particularly, the emission lines of iodine at 804.374 and 905.833 nm from LIPs have been observed for the first time. In the helium ambient gas, Stark broadening of the emission lines and background continuum emission could be suppressed significantly. Variations of the line intensity, plasma temperature, and electron density with the helium flow rate was investigated. Detection of chlorine and bromine in flame retardant of rubbers was demonstrated using this method. Finally, we suggest a pulsed helium gas jet as a practical and ecomonical helium gas source for the LIBS analysis of halogens in open air.

• Korean Journal of Materials Research
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• v.27 no.4
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• pp.211-215
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• 2017

Reactive Ion Etching (RIE) and wet etching are employed in existing texturing processes to fabricate solar cells. Laser etching is used for particular purposes such as selective etching for grooves. However, such processes require a higher level of cost and longer processing time and those factors affect the unit cost of each process of fabricating solar cells. As a way to reduce the unit cost of this process of making solar cells, an atmospheric plasma source will be employed in this study for the texturing of crystalline silicon wafers. In this study, we produced the atmospheric plasma source and examined its basic properties. Then, using the prepared atmospheric plasma source, we performed the texturing process of crystalline silicon wafers. The results obtained from texturing processes employing the atmospheric plasma source and employing RIE were examined and compared with each other. The average reflectance of the specimens obtained from the atmospheric plasma texturing process was 7.88 %, while that of specimens obtained from the texturing process employing RIE was 8.04 %. Surface morphologies of textured wafers were examined and measured through Scanning Electron Microscopy (SEM) and similar shapes of reactive ion etched wafers were found. The Power Conversion Efficiencies (PCE) of the solar cells manufactured through each process were 16.97 % (atmospheric plasma texturing) and 16.29 % (RIE texturing).

• Nuclear Engineering and Technology
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• v.41 no.5
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• pp.709-714
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• 2009

An ion implanter, which can serve as a metal-ion supply, has been constructed and performance tested. Copper ions are generated and extracted from a Bernas ion source with a heating crucible that provides feed gases to sustain the plasma. Sable arc plasmas can be sustained in the ion source for a crucible temperature in excess of $350^{\circ}C$. Stable extraction of the ions is possible for arc Currents less than 0.3 A. Arc currents increase with the induced power of a block cathode and the transverse field in the ion source. $Cu^+$ ions in the extracted beam are separated using a dipole magnet. A $20{\mu}A$ $Cu^+$ ion current can be extracted with a 0.2 A arc current. The ion current can support a dose of $10^{16}ions/cm^2$ over an area of $15\;cm^2$ within a few hours.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.1
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• pp.19-26
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• 2006

The ccrf-discharge has in comparison with the hollow-cathode discharge and DC-discharge some advantages: Simple design of the tube and homogeneous plasma. The ccrf-discharge was researched with the goal, to use on the excitation of the gas laser. In this work a rf-exciting system was planned and developed. With it a homogeneous discharge was produced in the cw operation. To supply the rf-power with the frequency 13.56[MHz] effectively in the discharge, laser tube were used with inner diameter of 5[mm] and the specially developed rf-electrodes. A matching circuit was composed also. Thereby the impedance of the discharge tube was adjusted to the 50[$\Omega$] output resistance of the rf-source.