• Proceedings of the Optical Society of Korea Conference
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• 2006.07a
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• pp.123-124
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• 2006

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.5
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• pp.236-240
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• 2004

In this paper we examine the reflection characteristics of dielectric microstrip lines with open-ended termination containing an optically induced plasma region, which are analyzed by the assumption that the plasma is distributed homogeneously in laser illumination. The characteristics impedances resulting from the presence of plasma are evaluated by the transmission line model. To estimate theoretically the characteristic response of identical systems in the time domain, the Fourier transformation method is evaluated. The reflection characteristics of time and frequency response in microwave systems have been calculated using an equivalent circuit model.

• Journal of Sensor Science and Technology
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• v.5 no.2
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• pp.55-60
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• 1996

The growth and microwave plasma assisted nitrogen doping of ZnSe by low pressure organometallic vapor phase epitaxy(OMVPE) has been investigated in a vertical downflow reactor equipped with a laser interferometer for in-situ growth rate measurements. Particular emphasis is placed on understanding growth characteristics of $H_{2}Se$ and the new adduct source dimethylzinc:triethyllamine($DMZn:NEt_{3}$) as compared with those obtained with $H_{2}Se$ and DMZn. At lower temperatures ($<300^{\circ}C$) and pressures(<30Torr), growth rates are higher with the adduct source and the surface morphology is improved relative to films synthesized with DMZn. Hall measurements and photoluminescence spectra of the grown films demonstrate that DMZn and $DMZn:NEt_{3}$ produce material with comparable electronic and optical properties. Microwave plasma decomposition of ammonia is investigated as a possible approach to increasing nitrogen incorporation in ZnSe and photoluminescence spectra are compared to those realized with conventional ammonia doping.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.242-242
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• 1999

상대론적 전자빔 발생장치(300kV, 40kA, 60ns)를 통하여 발생하는 전자빔은 진공 중에서 공간전하한계전류값을 갖게 되어 진행이 어렵다. 이런 전자빔의 전파특성을 향상시키기 위하여 여러 가지 방법들이 실험되어졌다. 본 실험실에서 수행한 실험은 전자빔의 진행해나가는 도파관 속에 국부적인 plasma channel을 형성시키고 이에 따른 전자빔의 전파율의 향상을 유도하였다. 이때 형성되는 높은 에너지의 이온빔을 관찰하고 이온 전류밀도에 따른 전자빔의 수송효율사이의 관계를 관찰하였다. 전류밀도의 증가는 여러 가지로 응용 될 수 있다. 자유전자레이저(Free Electron Laser)는 microwave로부터 가시광선 영역을 포함해 X-ray 영역까지의 coherent radiation을 발생시킬 수 있는 개념의 장치이다. 이 장치에서 전자빔의 전류밀도는 출력되는 전자기파의 power와 직접적으로 관계하여 고출력 microwave 발생장치를 구성할 수 있다. 이번 실험에서는 일정한 국부적으로 형성된 plasma에 따른 강렬한 상대론적 전자빔의 전파효율의 향상을 관찰하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1187-1190
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• 2004

In this paper we analyze the reflection characteristics of a dielectric microstrip line with an open-end termination containing optically induced plasma region, which are analyzed by the assumption that the plasma is distributed homogeneously in the laser illumination. The characteristics impedances resulting from the presence of plasma are evaluated the transmission line model. To estimate theoretically the characteristic response of same systems in the time domain, the Fourier transformation method is evaluated. The reflection characteristics of time response in microwave systems have been calculated.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.1-5
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• 2019

This study has been focused on properties of surface technology for large diameter upper electrode using in high density plasma process as like semi-conductor manufacturing process. The experimental studies have been carried out to get mirror surface for upper electrode. For a formation of high surface quality upper electrode, single crystal silicon upper electrode has been mechanical and chemical machining worked. Mechanical machining work of the upper electrode is carried out with varying mesh type using diamond wheel. In case of chemical machining work, upper electrode surface roughness was observed to be strongly dependent upon the etchant. The different surface roughness characteristics were observed according to etchant. The machining result of the surface roughness and surface morphology have been analyzed by use of surface roughness tester, laser microscope and ICP-MS.

• Medical Lasers
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• v.9 no.2
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• pp.187-189
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• 2020

Cold atmospheric plasma (CAP) is a material that generates free radicals through the ionization of air. Despite the application in various medical fields, the efficacy and safety of CAP on post-inflammatory hyperpigmentation due to atopic dermatitis have not been reported. Herein, we report the improvement in post-inflammatory hyperpigmentation of atopic dermatitis, after CAP treatment of three sessions weekly, 10 minutes per session. We examined the clinical severity indexes before and after treatment, including the Investigator's Global Assessment, modified Atopic Dermatitis Antecubital Severity, Eczema Area and Severity Index, and pruritus visual analogue scores. Our results indicate that CAP alleviates the post-inflammatory hyperpigmentation and clinical severity of atopic dermatitis, and effectively improves the atopic skin lesion without severe safety issues. We believe that the previously reported anti-bacterial effects and production of interleukin-6 after CAP treatment are probably responsible for the underlying mechanisms leading to clinical improvement.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.8-12
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• 2008

For the reduction of fabrication cost and process time of AC plasma display panel (PDP), indium tin oxide (ITO) layer was patterned as bus electrode using Nd:$YVO_4$ laser. In comparison with the chemically wet etched ITO patterns, laser ablated ITO patterns showed the formation of shoulders and ripple-like structures at the edge of the ITO lines. For the reduction of shoulders and ripple-like structures, pulse repetition rate and scan velocity of laser was changed. In addition, we analyzed a discharge characteristic of PDP test panel to observe how the shoulders and ripple-like structures influence on the PDP. Based on experimental results, the pattern etched at the 500 mm/s and 40 kHz was better than any other condition. From this experiment we could see the possibility of the laser direct patterning for the application to the patterning of ITO in AC-PDP.

• Journal of Ceramic Processing Research
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• v.20 no.6
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• pp.589-596
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• 2019

Pigments with minute particle sizes, such as carbon black (CB) and pigment red 48:2 (P.R.48:2), are the most important types of pigment and have been widely used in many industrial applications. However, minute particles have large surface areas, high oil absorption and low surface energy. They therefore tend to be repellent to the vehicle and lose stability, resulting in significant increases in viscosity or reaggregation in the vehicle. Therefore, finding the best way to improve the dispersion properties of minute particle size pigments presents a major technical challenge. In this study, minute particle types of CB and P.R.48:2 were treated with nitrogen gas plasma generated via radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD) to increase the dispersion properties of minute particles in deionized (DI) water. The morphologies and particle sizes of untreated and plasma treated particles were evaluated using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The average distributions of particle size were measured using a laser particle sizer. Fourier transform infrared spectroscopy was carried out on the samples to identify changes in molecular interactions during plasma processing. The results of our analysis indicate that N2 plasma treatment is an effective method for improving the dispersibility of minute particles of pigment in DI water.

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.238-244
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• 2013

Doping process using laser is an important process in fabrication of solar cell for heat treatment. However, the process of using the furnace is difficult to form a selective emitter doping region. The case of using a selective emitter laser doping is required an expensive laser equipment and induce the wafer's structure damage due to high temperature. This study, we fabricated a new costly plasma source. Through this, we research the selective emitter doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (a few tens kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer. Atmospheric plasma treatment time was 15 s and 30 s, and current for making the plasma is 40 mA and 70 mA. We investigated a doping profile by using SIMS (Secondary Ion Mass Spectroscopy) and we grasp the sheet resistance of electrical character by using doping profile. As result of experiment, prolonged doping process time and highly plasma current occur a deeper doping depth, moreover improve sheet resistance. We grasped the wafer's surface damage after atmospheric pressure plasma doping by using SEM (Scanning Electron Microscopy). We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.