• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.1B
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• pp.62-67
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• 2010

Our research group has investigated that RFID tag packaging development and RFID tag flip chip bonding method influences on the industry-environmental customized RFID tag development that has applications to various industry environmental conditions. RFID tag flip chip bonding is consisting with wire bonding, ultrasonic bonding, heat plate bonding, and laser bonding and those methods are also depending on the different RFID tag development. Our research data shows that, among the various industrial environments such as an extremely high temperature, cryogenic, high-humidity, flexible, high-durable, development of RFID tag in an extremely high temperature is inappropriate for laser bonding method, converting of heat energy as absorbing light energy or heat plate bonding method of straight heat transferring manner, on the other hand, is suitable for wire bonding method which directly connect bump to pattern using wire.

• Electronics and Telecommunications Trends
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• v.33 no.6
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• pp.50-57
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• 2018

As devices have evolved, traditional flip chip bonding and recently commercialized thermocompression bonding techniques have been limited. Laser-assisted bonding is attracting attention as a technology that satisfies both the requirements of mass production and the yield enhancement of advanced packaging interconnections, which are weak points of these bonding technologies. The laser-assisted bonding technique can be applied not only to a two-dimensional bonding but also to a three-dimensional stacked structure, and can be applied to various types of device bonding such as electronic devices; display devices, e.g., LEDs; and sensors.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2006.11a
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• pp.85-89
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• 2006

• Proceedings of the Korean Society of Laser Processing Conference
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• 2006.11a
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• pp.53-81
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• 2006

A COG(Chip on Glass) bonding process that is one of display packaging technology and bonds between driver IC chip and a glass panel using ACF(Anisotropic Conductive Film)has been investigated by using diode laser. This method is possible to raise cure temperature of ACF within one second and can reduce the total process time for COG bonding by a conventional method such as a hot plate. Also we can get good pressure mark on the surface of electrodes and higher bonding strength than that by convention method. Results show that laser COG bonding can give low pressure bonding and decrease a warpage of panel. We believe that it can be applied to fine pitch module.

• ETRI Journal
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• v.41 no.3
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• pp.396-407
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• 2019

Laser-assisted bonding (LAB) is an advanced technology in which a homogenized laser beam is selectively applied to a chip. Previous researches have demonstrated the feasibility of using a single-tier LAB process for 3D through-silicon via (TSV) integration with nonconductive paste (NCP), where each TSV die is bonded one at a time. A collective LAB process, where several TSV dies can be stacked simultaneously, is developed to improve the productivity while maintaining the reliability of the solder joints. A single-tier LAB process for 3D TSV integration with NCP is introduced for two different values of laser power, namely 100 W and 150 W. For the 100 W case, a maximum of three dies can be collectively stacked, whereas for the 150 W case, a total of six tiers can be simultaneously bonded. For the 100 W case, the intermetallic compound microstructure is a typical Cu-Sn phase system, whereas for the 150 W case, it is asymmetrical owing to a thermogradient across the solder joint. The collective LAB process can be realized through proper design of the bonding parameters such as laser power, time, and number of stacked dies.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.23-33
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• 2021

Two main technologies of III-V/Si laser diode for optical communication, direct epitaxial growth, and wafer bonding were studied. Until now, the wafer bonding has been vigorously studied and seems promising for the ideal III-V/Si laser. However, the wafer bonding process is still complicated and has a limit of mass production. The development of a concise and innovative integration method for silicon photonics is urgent. In the future, the demand for high-speed data processing and energy saving, as well as ultra-high density integration, will increase. Therefore, the study for the hetero-junction, which is that the III-V compound semiconductor is directly grown on Si semiconductor can overcome the current limitations and may be the goal for the ideal III-V/Si laser diode.

• The korean journal of orthodontics
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• v.42 no.1
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• pp.32-38
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• 2012

Objective: The aim of this study was to compare the effects of different enamel conditioning techniques for bracket bonding. Methods: Ninety-one human premolars were randomly divided in six groups of 15 specimens each. The enamel surfaces of the teeth were etched with 35% orthophosphoric acid in Group 1, with a self-etching primer in Group 2, sandblasted in Group 3, sandblasted and etched with 35% orthophosphoric acid in Group 4, conditioned by Er:YAG laser in Group 5 and conditioned by Er:YAG laser and etched with 35% phosphoric acid gel respectively in Group 6. After enamel conditioning procedures, brackets were bonded and shear bonding test was performed. After debonding, adhesive remnant index scores were calculated for all groups. One tooth from each group were inspected by scanning electron microscope for evaluating the enamel surface characteristics. Results: The laser and acid etched group showed the highest mean shear bond strength (SBS) value ($13.61{\pm}1.14$ MPa) while sandblasted group yielded the lowest value ($3.12{\pm}0.61$ MPa). Conclusions: Although the SBS values were higher, the teeth in laser conditioned groups were highly damaged. Therefore, acid etching and self-etching techniques were found to be safer for orthodontic bracket bonding. Sandblasting method was found to generate inadequate bonding strength.

• Composites Research
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• v.33 no.6
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• pp.371-376
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• 2020

The adhesive strength can be improved through surface treatment. The most common method is to improve physical bonding by varying the surface conditions. This study presents the effect of laser surface treatment on the adhesive strength of CFRP. The surface roughness was patterned using a 1064 nm laser. The effects of the number of laser shots and the direction and length of the pattern on the adhesion of the CFRP/CFRP single joint were investigated through tensile tests. Tests according to ASTM D5868 were performed, and the bonding mechanism was determined by analyzing the damaged surface after a fracture. The optimized number of the laser shots and the optimized depth of the roughness should be required to increase the bonding strength on the CFRP surface. When considering the shear stress in the tensile direction, the roughness pattern in the direction of 45° that increases the length of the fracture path in the adhesive layer resulted in an increase of the adhesive strength. The surface treatment of the bonding surface using a laser is a suitable method to acquire a mechanical bonding mechanism and improve the bonding strength of the CFRP bonding joint. The study on the optimized laser process parameters is required for utilizing the benefits of laser surface processing.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.293-294
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• 2010

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.177-178
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• 2007