• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.23.1-23.1
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• 2009

ZnO is of great interest for various technological applications ranging from optoelectronics to chemical sensors because of its superior emission, electronic, and chemical properties. In addition, vertically well-aligned ZnO nanorods on large areas with good optical and structural properties are of special interest for the fabrication of electronic and optical nanodevices. To date, several approaches have been proposed for the growth of one-dimensional (1D) ZnO nanostructunres. Several groups have been reported the MOCVD growth of ZnO nanorods with no metal catalysts at $400^{\circ}C$, and fabricated a well-aligned ZnO nanorod array on a PLD prepared ZnO film by using a catalyst-free method. It has been suggested that the synthesis of ZnO nanowires using a template-less/surfactant-free aqueous method. However, despite being a well-established and cost-effective method of thin film deposition, the use of magnetrons puttering to grow ZnO nanorods has not been reported yet. Additionally,magnetron sputtering has the dvantage of producing highly oriented ZnO film sat a relatively low process temperature. Currently, more effort has been concentrated on the synthesis of 1D ZnO nanostructures doped with various metal elements (Al, In, Ga, etc.) to obtain nanostructures with high quality,improved emission properties, and high conductance in functional oxide semiconductors. Among these dopants, Ga-doped ZnO has demonstrated substantial advantages over Al-doped ZnO, including greater resistant to oxidation. Since the covalent bond length of Ga-O ($1.92\;{\AA}$) is nearly equal to that of Zn-O ($1.97\;{\AA}$), high electron mobility and low electrical resistivity are also expected in the Ga-doped ZnO. In this article, we report the successful growth of Ga-doped ZnO nanorods on c-Sapphire substrate without metal catalysts by magnetrons puttering and our investigations of their structural, optical, and field emission properties.

• Aerospace Engineering and Technology
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• v.4 no.2
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• pp.107-116
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• 2005

As a unique payload of Komsat-2, MSC, comprising EOS(Electro-Optical Sub-system), PMU(Payload Management Unit) and PDTS(Payload Data Transmission Sub-system), is supposed to take pictures of one panchromatic and 4 multi-spectral image between wavelength 450mm~900mm, and is being under final Satellite I&T. It will perform the earth remote sensing with applications such as acquisition of high resolution images, surveillance of large scale disasters and its countermeasure, survey of natural resources, etc.. Under the hostile influence of the extreme space environmental conditions due to deep space and direct solar flux, the thermal design is especially of major importance in designing a payload. There are tight temperature range restrictions for electro-optical elements while on the other hand there are low power consumption requirements due to the limited energy source on the spacecraft. This paper describes details of thermal control system for MSC.

• Current Optics and Photonics
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• v.5 no.3
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• pp.322-328
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• 2021

In this paper, a pretreatment method for a matrix in convex optimization is proposed to optimize the spectral reconstruction process of a disordered dispersion spectrometer. Unlike the reconstruction process of traditional spectrometers using Fourier transforms, the reconstruction process of disordered dispersion spectrometers involves solving a large-scale matrix equation. However, since the matrices in the matrix equation are obtained through measurement, they contain uncertainties due to out of band signals, background noise, rounding errors, temperature variations and so on. It is difficult to solve such a matrix equation by using ordinary nonstationary iterative methods, owing to instability problems. Although the smoothing Tikhonov regularization approach has the ability to approximatively solve the matrix equation and reconstruct most simple spectral shapes, it still suffers the limitations of reconstructing complex and irregular spectral shapes that are commonly used to distinguish different elements of detected targets with mixed substances by characteristic spectral peaks. Therefore, we propose a special pretreatment method for a matrix in convex optimization, which has been proved to be useful for reducing the condition number of matrices in the equation. In comparison with the reconstructed spectra gotten by the previous ordinary iterative method, the spectra obtained by the pretreatment method show obvious accuracy.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.35.1-35.1
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• 2011

New photovoltaic (PV) materials and manufacturing approaches are needed for meeting the demand for lower-cost solar cells. The prototypal thin-film photovoltaic absorbers (CdTe and $Cu(In,Ga)Se_2$) can achieve solar conversion efficiencies of up to 20% and are now commercially available, but the presence of toxic (Cd,Se) and expensive elemental components (In, Te) is a real issue as the demand for photovoltaics rapidly increases. To overcome these limitations, there has been substantial interest in developing viable alternative materials, such as $Cu_2ZnSnS_4$ (CZTS) is an emerging solar absorber that is structurally similar to CIGS, but contains only earth abundant, non-toxic elements and has a near optimal direct band gap energy of 1.4~1.6 ev and a large absorption coefficient of ${\sim}10^4\;cm^{-1}$. The CZTS absorber layers are grown and investigated by various fabrication methods, such as thermal evaporation, e-beam evaporation with a post sulfurization, sputtering, non-vacuum sol-gel, pulsed laser, spray-pyrolysis method and electrodeposition technique. In the present work, we report an alternative method for large area deposition of CZTS thin films that is potentially high throughput and inexpensive when used to produce monolithically integrated solar panel modules. Specifically, we have developed an aqueous chemical approach based on chemical bath deposition (CBD) with a subsequent sulfurization heat treatment. Samples produced by our method were analyzed by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, absorbance and photoluminescence. The results show that this inexpensive and relatively benign process produces thin films of CZTS exhibiting uniform composition, kesterite crystal structure, and good optical properties. A preliminary solar cell device was fabricated to demonstrate rectifying and photovoltaic behavior.

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.160-163
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• 2013

We investigated the effect of light intensity and wavelength of a solar cell device by using photoconductive atomic force microscopy (PC-AFM). The $POCl_3$ diffusion doping process was used to produce a p-n junction solar cell device based on a Poly-Si wafer and the electrical properties of prepared solar cells were measured using a solar cell simulator system. The measured open circuit voltage ($V_{oc}$) is 0.59 V and the short circuit current ($I_{sc}$) is 48.5 mA. Also, the values of the fill factors and efficiencies of the devices are 0.7% and approximately 13.6%, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, was used for direct measurements of photoelectric characteristics in local instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics were observed. Results obtained through PC-AFM were compared with the electric/optical characteristics data obtained through a solar simulator. The voltage ($V_{PC-AFM}$) at which the current was 0 A in the I-V characteristic curves increased sharply up to 1.8 $mW/cm^2$, peaking and slowly falling as light intensity increased. Here, $V_{PC-AFM}$ at 1.8 $mW/cm^2$ was 0.29 V, which corresponds to 59% of the average $V_{oc}$ value, as measured with the solar simulator. Also, while light wavelength was increased from 300 nm to 1,100 nm, the external quantum efficiency (EQE) and results from PC-AFM showed similar trends at the macro scale, but returned different results in several sections, indicating the need for detailed analysis and improvement in the future.

• Journal of Powder Materials
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• v.23 no.3
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• pp.207-212
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• 2016

In this study, Fe-Cu-Ni-Mo-C low alloy steel powder is consolidated by spark plasma sintering (SPS) process. The internal structure and the surface fracture behavior are studied using field-emission scanning electron microscopy and optical microscopy techniques. The bulk samples are polished and etched in order to observe the internal structure. The sample sintered at $900^{\circ}C$ with holding time of 10 minutes achieves nearly full density of 98.9% while the density of the as-received conventionally sintered product is 90.3%. The fracture microstructures indicate that the sample prepared at $900^{\circ}C$ by the SPS process is hard to break out because of the presence of both grain boundaries and internal particle fractures. Moreover, the lamellar pearlite structure is also observed in this sample. The samples sintered at 1000 and $1100^{\circ}C$ exhibit a large number of tiny particles and pores due to the melting of Cu and aggregation of the alloy elements during the SPS process. The highest hardness value of 296.52 HV is observed for the sample sintered at $900^{\circ}C$ with holding time of 10 minutes.

• Proceedings of the KSRS Conference
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• 2007.10a
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• pp.22-24
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• 2007

Waterline extraction is the one of widely used methods for studying changes in tidal flat environment and coastlines using multi-temporal optical images such as Landsat TM and Landsat ETM+. High dynamics of tidal currents and land reclamation which accelerate sedimentation and/or erosion cause waterline change in tidal flats. The amount of sediment deposited or eroded can be evaluated by precisely estimating waterline changes in tidal flats. The objective of this study is to detect the change of waterlines during 17 years and analyze the trends of erosion and sedimentation in the study areas. The Ganghwado tidal flat on the west coast of the Korean Peninsula was selected. The study area is famous for high dynamics of tidal currents and vast tidal flats. Land reclamation which has been carried out on a large scale is also considered as one of elements that have accelerated the environmental changes in this tidal flat. In this study, we acquired 26 waterlines from Landsat TM and Landsat ETM+ images. We extracted the waterline from each satellite image to generate a digital elevation map (DEM) which was used for reference and to compare with the other waterline which was extracted from DEM having a same tide. The result of comparison well depicted the areas of dominant sedimentation and erosion, and general trends of sedimentation and erosion according to sub-regions are also revealed during the investigation time. Results showed that erosion during a decade was dominant at the west of the Southern Ganghwado tidal flat, while sedimentation was dominant at the wide channel between the Southern Ganghwado tidal flat and the Yeongjongdo tidal flat. This area has been commonly affected by high currents and sedimentation energy. Although we were not able to verify the accuracy of the waterline changes, this result clearly showed the waterline change and therefore, the waterline extraction method used in this study has proven as an effective tool for long term tidal change estimation.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.334-334
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• 2012

Transparent oxide semiconductors have recently attracted much attention as channel layer materials due to advantageous electrical and optical characteristics such as high mobility, high stability, and good transparency. In addition, transparent oxide semiconductor can be fabricated at low temperature with a low production cost and it permits highly uniform devices such as large area displays. A variety of thin film transistors (TFTs) have been studied including ZnO, InZnO, and InGaZnO as the channel layer. Recently, there are many studies for substitution of Ga in InGaZnO TFTs due to their problem, such as stability of devices. In this work, new quaternary compound materials, tantalum-indium-tin oxide (TaInSnO) thin films were fabricated by using co-sputtering and used for the active channel layer in thin film transistors (TFTs). We deposited TaInSnO films in a mixed gas (O2+Ar) atmosphere by co-sputtering from Ta and ITO targets, respectively. The electric characteristics of TaInSnO TFTs and thin films were investigated according to the RF power applied to the $Ta_2O_5$ target. The addition of Ta elements could suppress the formation of oxygen vacancies because of the stronger oxidation tendency of Ta relative to that of In or Sn. Therefore the free carrier density decreased with increasing RF power of $Ta_2O_5$ in TaInSnO thin film. The optimized characteristics of TaInSnO TFT showed an on/off current ratio of $1.4{\times}108$, a threshold voltage of 2.91 V, a field-effect mobility of 2.37 cm2/Vs, and a subthreshold swing of 0.48 V/dec.

• Korean Journal of Materials Research
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• v.28 no.11
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• pp.680-684
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• 2018

We investigate the effect of light intensity and wavelength of a solar cell device using photoconductive atomic force microscopy(PC-AFM). A $POCl_3$ diffusion doping process is used to produce a p-n junction solar cell device based on a polySi wafer, and the electrical properties of prepared solar cells are measured using a solar cell simulator system. The measured open circuit voltage($V_{oc}$) is 0.59 V and the short circuit current($I_{sc}$) is 48.5 mA. Moreover, the values of the fill factors and efficiencies of the devices are 0.7 and approximately 13.6 %, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, is used for direct measurements of photoelectric characteristics in limited areas instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics are observed. Results obtained through PC-AFM are compared with the electric/optical characteristics data obtained through a solar simulator. The voltage($V_{PC-AFM}$) at which the current is 0 A in the I-V characteristic curves increases sharply up to $18W/m^2$, peaking and slowly falling as light intensity increases. Here, $V_{PC-AFM}$ at $18W/m^2$ is 0.29 V, which corresponds to 59 % of the average $V_{oc}$ value, as measured with the solar simulator. Furthermore, while the light wavelength increases from 300 nm to 1,100 nm, the external quantum efficiency(EQE) and results from PC-AFM show similar trends at the macro scale but reveal different results in several sections, indicating the need for detailed analysis and improvement in the future.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.371-375
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• 2019

Developing a thin-film transistor with characteristics such as a large area, high mobility, and high reliability are key elements required for the next generation on displays. In this paper, we have investigated the research trends related to improving the reliability of oxide-semiconductor-based thin-film transistors, which are the primary focus of study in the field of optical displays. It has been reported that thermal treatment in a high-pressure oxygen atmosphere reduces the threshold voltage shift from -7.1 V to -1.9 V under NBIS. Additionally, a device with a $SiO_2/Si_3N_4$ dual-structure has a lower threshold voltage (-0.82 V) under NBIS than a single-gate-insulator-based device (-11.6 V). The dual channel structure with different oxygen partial pressures was also confirmed to have a stable threshold voltage under NBIS. These can be considered for further study to improve the NBIS problem.