• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.658-658
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• 2013

Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

• 한국재료학회지
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• 제33권11호
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• pp.491-496
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• 2023

As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 ℃ The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.87-87
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• 2011

Oxide semiconductors are attractive materials for thin-film electronics and optoelectronics due to compatibility with synthesis on large-area, glass and flexible substrate. However, development of thin-film electronics has been hampered by the limited number of semiconducting oxides that are p-type. We report on the effect of the oxygen partial pressure ratio in the gas mixture on the electrical and optical properties of spinel Mg:$ZnCo_2O_4$ thin films deposited at room temperature using RF sputtering, that exhibit p-type conduction. The thin-films are deposited at room temperature in a background of oxygen using a polycrystalline Mg:$ZnCo_2O_4$ ablation target. The p-type conduction is confirmed by positive Seebeck coefficient and positive Hall coefficient. The electrical resistivity and carrier concentration in on dependent Mg:$ZnCo_2O_4$ thin films were found to be dependent on the oxygen partial pressure ratio. As a result, it is revealed that the Mg:$ZnCo_2O_4$ thin-films were greatly influenced on the electrical and optical properties by the oxygen partial pressure condition. The visible region of the spectrum of 36~85%, and hole mobility of 1.1~3.7 $cm^2$/Vs, were obtained.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.11.2-11.2
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• 2010

Photovoltaic devices are promising candidates as affordable and large-area renewable energy sources, which can replace the fossil-fuel-based resources. Especially, thin film solar cells have attracted increasing research attention, since they have a great advantage of low production cost. From the physical point of view, the photovoltaic devices can provide us interesting questions, how to enhance the light absorption and the carrier collection efficiency. A lot of approaches would be possible to address these issues. We have focused on two major topics relevant to photovoltaic device physics; (1) light management using surface plasmons and (2) junction characterizations aiming at proper interface engineering. Regarding the first topic, we have investigated the influences of Ag under-layer morphology on optical properties of ZnO thin films. The experimental results suggested that coupling between the surface plasmon polaritons at the ZnO/Ag interface and excitons in ZnO should play important roles in reflectivity of the ZnO/Ag thin films, which are widely used back reflector structures in thin film solar cells. For the second topic, we have carried out scanning probe microscopy studies of Schottky junctions consisting of photovoltaic materials. Such a research is very helpful to understand the correlation between the defects (e.g., grain boundaries) and local electrical properties. We will introduce some of the recent experimental results and discuss the physical significance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.388-391
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• 2003

The properties of these detectors can be controlled by electronics and exposure conditions. Flat-panel detectors for digital diagnostic imaging convert incident x-ray images to charge images. Flat panel detectors gain more interest real time medical x-ray imaging. Active area of flat panel detector is $14{\times}17$ inch. Detector is based on a $2560{\times}3072$ away of photoconductor and TFT pixels. X-ray conversion layer is deposited upper TFT array flat panel with a 500m by thermal deposition technology. Thickness uniformity of this layer is made of thickness control technology(5%) of thermal deposition system. Each $139m{\times}139m$ pixel is made of thin film transistor technology, a storage capacitor and charge collection electrode having geometrical fill factor of 86%. Using the separate driving system of two dimensional mosaic modules for large area, that is able to 4.2 second per frame. Imaging performance is suited for digital radiography imaging substitute by conventional radiography film system..

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.281.1-281.1
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• 2016

Transition metal dichalcogenides (TMDCs) are promising layered structure materials for next-generation nano electronic devices. Many investigation on the FET device using TMDCs channel material have been performed with some integrated approach. To use TMDCs for channel material of top-gate thin film transistor(TFT), the study on high-k dielectrics on TMDCs is necessary. However, uniform growth of atomic-layer-deposited high-k dielectric film on TMDCs is difficult, owing to the lack of dangling bonds and functional groups on TMDC's basal plane. We demonstrate the effect of remote oxygen plasma pretreatment of large area synthesized few-layer MoSe2 on the growth behavior of Al2O3, which were formed by atomic layer deposition (ALD) using tri-methylaluminum (TMA) metal precursors with water oxidant. We investigated uniformity of Al2O3 by Atomic force microscopy (AFM) and Scanning electron microscopy (SEM). Raman features of MoSe2 with remote plasma pretreatment time were obtained to confirm physical plasma damage. In addition, X-ray photoelectron spectroscopy (XPS) was measured to investigate the reaction between MoSe2 and oxygen atom after the remote O2 plasma pretreatment. Finally, we have uniform Al2O3 thin film on the MoSe2 by remote O2 plasma pretreatment before ALD. This study can provide interfacial engineering process to decrease the leakage current and to improve mobility of top-gate TFT much higher.

• 반도체디스플레이기술학회지
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• 제19권1호
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• pp.79-84
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• 2020

Unlike a printing process, it is difficult to pattern organic thin films in the longitudinal (coating) direction using a coating process. In this paper, we have investigated the feasibility of patterning organic thin films using needles. To this end, we have slot-coated an aqueous poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) solution in the form of a fine stripe or large area and then applied the dual needle; one for discharging the main solvent of the underlying thin film and the other for sucking the dissolved thin film. We have found that the pattern width and depth increase as the moving speed of the plate decreases. However, it is observed that the sidewall slope is very gentle (the length of the slope is of the order of 200 ㎛) due to the fact that the discharged main solvent is widely spread and then isotropic etching occurs. With this scheme, we have also demonstrated that a fine stripe can be obtained by scanning the dual needle closely. To demonstrate its applicability to solution-processable organic light-emitting diodes (OLEDs), we have also fabricated OLED with the patterned PEDOT:PSS stripe and observed the insulation property in the strong light-emitting stripe.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.185-188
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• 2001

In this study, $Al_2$O$_3$films have been deposited with Atomic Layer Deposition(ALD) for gate insulator for MPTMA and $H_2O$ at low temperature below 40$0^{\circ}C$ . Conventional methods of $Al_2$O$_3$thin film deposition have suffered from the poor step coverage due to reduction of device dimension and increasing contact/via hole aspect ratio. ALD is a self-limiting growth process with controlled surface reaction where the growth rate is only dependent on the number of growth cycle and the lattice parameter of materials. ALD growth process has many advantages including accurate thickness control, large area and large batch capability, good uniformity, and pinholes freeness.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.25.2-25.2
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• 2011

Recently, thin film capacitors used for vehicle inverters are small size, high capacitance, fast response, and large capacitance. But its applications were made up of liquid as electrolyte, so its capacitors are limited to low operating temperature range and the polarity. This research proposes using Ni-P alloys by electroless plating as the electrode instead of liquid electrode. Our substrate has a high aspect ratio and complicated shape because of anodic aluminum oxide (AAO). We used AAO because film thickness and effective surface area are depended on for high capacitance. As the metal electrode instead of electrolyte is injected into AAO, the film capacitor has advantages high voltage, wide operating temperature, and excellent frequency property. However, thin film capacitor made by electroless-plated Ni on AAO for full-filling into etched tunnel was limited from optimizing the deposition process so as to prevent open-through pore structures at the electroless plating owing to complicated morphological structure. In this paper, the electroless plating parameters are controlled by temperature in electroless Ni plating for reducing reaction rate. The Electrical properties with I-V and capacitance density were measured. By using nickel electrode, the capacitance density for the etched and Ni electroless plated films was 100 nFcm-2 while that for a film without any etch tunnel was 12.5 nFcm-2. Breakdown voltage and leakage current are improved, as the properties of metal deposition by electroless plating. The synthesized final nanostructures were characterized by scanning electron microscopy (SEM).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.243.2-243.2
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• 2015

We report a high-performing nanoscale NiO thin film grown by thermal oxidation of sputtered Ni film. The structural, physical, optical and electrical properties of nanoscale NiO were comprehensively investigated. A quality transparent heterojunction (NiO/ZnO) was formed by large-area applicable sputtering deposition method that has an extremely low saturation current of 0.1 nA. Considerable large rectification ratio of more than 1000 was obtained for transparent heterojunction device. Mott-Schottky analyses were applied to develop the interface of NiO and ZnO by establishing energy diagrams. Nanoscale NiO has the accepter carrier concentration of the order of 1018 cm-3. Nanoscale NiO Schottky junction device properties were comprehensively studied using room temperature impedance spectroscopy.