• Composites Research
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• v.29 no.6
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• pp.401-407
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• 2016

IPMC is composed of thin ion conductive polymer film sandwiched between metallic electrodes plated on both surfaces. Ionic Polymer-Metal Composite (IPMC) generates voltages when bent by mechanical stimuli. IPMC has a potential for the variety of energy harvesting applications due to its soft and hydrophilic characteristics. However, the large-scale implementation is necessary to increase the output power. In this paper, the scale-up of surface area effect on voltage generation characteristics of IPMC was investigated using IPMC samples with different surface areas. Also, a circuit model simulating both the output voltage and its offset variations was designed for estimating the voltages from IPMC samples. The proposed model simulated the output voltages with offsets well corresponding to various frequencies of input bending motion. However, some samples showed that the increase of error between real and simulated voltages with time due to the nonlinear characteristic of offset variations.

• Current Photovoltaic Research
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• v.3 no.2
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• pp.54-60
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• 2015

ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.

• Current Photovoltaic Research
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• v.1 no.2
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• pp.82-89
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• 2013

$Cu_2ZnSnS_4$ thin film have been fabricated by rapid thermal annealing of dc-sputtered metal precursor with Cu/ZnSn/Cu stack in sulfur ambient. A CZTS film with a good uniformity was formed at $560^{\circ}C$ in 6 min. $Cu_2SnS_3$ and $Cu_3SnS_4$ secondary phases were present at $540^{\circ}C$ and a trace amount of $Cu_2SnS_3$ secondary phase was present at $560^{\circ}C$. Single-phase large-grained CZTS film with rough surface was formed at $560^{\circ}C$. Solar cell with best efficiency of 4.7% ($V_{oc}=632mV$, $j_{sc}=15.8mA/cm^2$, FF = 47.13%) for an area of $0.44cm^2$ was obtained for the CZTS absorber grown at $560^{\circ}C$ for 6 min. The existence of second phase at lower-temperature annealing and rough surface at higher-temperature annealing caused the degradation of cell performance. Also poor back contact by void formation deteriorated cell performance. The fill factor was below 0.5; it should be increased by minimizing voids at the CZTS/Mo interface. Our results suggest that CZTS absorbers can be grown by rapid thermal annealing of metallic precursors in sulfur ambient for short process times ranging in minutes.

• Journal of the Semiconductor & Display Technology
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• v.14 no.1
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• pp.61-65
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• 2015

We have fabricated poly(3,4-ethylenedioxythiophene) : poly(4-styrenesulfonate) (PEDOT : PSS) thin films using a slotdie coater for the applications of OLED lightings. It is demonstrated that the properties of slot-die coated PEDOT : PSS films are comparable with those of spin-coated ones. Namely, the average and peak-to-peak roughness of the slot-die coated 50-nm-thick PEDOT : PSS film are measured to be as low as 0.247 nm and 1.3 nm, respectively. Moreover, we have obtained excellent thickness uniformity (~1.91%). With the slot-die coated PEDOT : PSS films, we have fabricated green phosphorescent OLED devices. For comparison, we have also fabricated OLED devices with spin-coated PEDOT : PSS films. Both show almost no discrepancy in device performance. The power efficiency (25.4 lm/W) and emission uniformity (77%) of OLEDs with slot-die coated PEDOT : PSS films are shown to be slightly lower than those (27.3 lm/W, 80%) of OLEDs with spin-coated PEDOT : PSS films at the luminance of 1,000nit, increasing the feasibility of using a slot-die coating process for the fabrication of large-area OLED lighting sources at a competitive price.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.361.2-361.2
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• 2014

Transition metal dichalcogenides (MoS2, WS2, WSe2, MoSe2, NbS2, NbSe2, etc.) are layered materials that can exhibit semiconducting, metallic and even superconducting behavior. In the bulk form, the semiconducting phases (MoS2, WS2, WSe2, MoSe2) have an indirect band gap. Recently, these layered systems have attracted a great deal of attention mainly due to their complementary electronic properties when compared to other two-dimensional materials, such as graphene (a semimetal) and boron nitride (an insulator). However, these bulk properties could be significantly modified when the system becomes mono-layered; the indirect band gap becomes direct. Such changes in the band structure when reducing the thickness of a WS2 film have important implications for the development of novel applications, such as valleytronics. In this work, we report for the controlled synthesis of large-area (~cm2) single-, bi-, and few-layer WS2 using a two-step process. WOx thin films were deposited onto a Si/SiO2 substrate, and these films were then sulfurized under vacuum in a second step occurring at high temperatures ($750^{\circ}C$). Furthermore, we have developed an efficient route to transfer these WS2 films onto different substrates, using concentrated HF. WS2 films of different thicknesses have been analyzed by optical microscopy, Raman spectroscopy, and high-resolution transmission electron microscopy.

• Journal of Adhesion and Interface
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• v.20 no.3
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• pp.110-115
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• 2019

Graphene oxide has been gathering interests as a way to exfoliate graphene. Since the oxidation group of graphene oxide can hydrogen bond with various functional groups, tremendous efforts have been actively conducted to apply various applications. However, graphene oxide alone cannot substantially possess the mechanical properties required for the practical application. Therefore, in this study, polydopamine, which is a bio-mimetic mussel protein-inspired material, was combined with graphene oxide to form a large-area composite membrane at the liquid-gas interface. In addition, the morphology of the polydopamine-graphene oxide composite thin film was also controlled to obtain a composite membrane having a nano-wrinkle structure. It can be expected to be used in the next generation seawater desalination membranes or carbon composites because it can form mechanically superior and sophisticated nanostructures.

• Journal of the Semiconductor & Display Technology
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• v.17 no.3
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• pp.41-45
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• 2018

Two-dimensional (2D) materials have been studied extensively due to their excellent physical, chemical, and electrical properties. Among them, we report the material and device characteristics of tin disulfide ($SnS_2$). To apply $SnS_2$ as a channel layer in a transistor, $SnS_2$ channels were formed by a stripping method and a transfer method. The limitation of this method is that it is difficult to produce uniform device characteristics over a large area. Therefore, we directly deposited $SnS_2$ by atomic layer deposition (ALD) and then performed lithography. This method was able to produce devices with repeatable characteristics over a large area. However, the $SnS_2$ film was damaged by the acetone used as a photoresist (PR) developer during the lithography process, with the electrical properties of mobility of $2.6{\times}10^{-4}cm^2/Vs$, S.S. of 58.1 V/decade, and on/off current ratio of $1.8{\times}10^2$. These results are not suitable for advanced electronic devices. In this study, we analyzed the effect of acetone on $SnS_2$ and studied the device process to prevent such damage. Using polyvinyl alcohol (PVA) as a passivation layer during the lithography process, the electrical characteristics of the $SnS_2$ transistor had $2.11{\times}10^{-3}cm^2/Vs$ of mobility, 11.3 V/decade of S.S, and $2.5{\times}10^3$ of the on/off current ratio, which were 10x improvements to the $SnS_2$ transistor fabricated by the conventional method.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1876-1878
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• 1999

Developed was a 5kW-class polymer electrolyte membrane fuel cell(PEMFC) system comprised of fuel cell stack, fuel processing, thermal and water management subsystems and ancillary equipments. Several large single cells have been fabricated with different gas flow field patterns and paths, and the gas flow field pattern for the stack has been determined based on the single cell performance of thin film membrane electrode assembly (MEA). The PEMFC stack was consisted of 100 cells with an electrode area of $300cm^2$, having serpentine flow pattern. Fuel processing was developed including an autothermal methanol reformer and two preferential CO oxidation reactors. The fuel processing was combined to PEMFC operation system consisted of air compressor and thermal and water management subsystems. The PEMFC stack showed performance of 5kW under the supply of $H_2$ and air, but its performance was lowered to 3.5kW under the supply of reformed gas.

• Journal of the Korean Society for Heat Treatment
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• v.33 no.3
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• pp.124-128
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• 2020

Recently, many studies on growth of single crystal diamond using MPECVD have been conducted. The heteroepitaxial method is one of the methods for growing diamonds on a large-area substrate, and research on synthesis of single crystal diamonds using SrTiO₃, MgO, and sapphire substrates has been attempted. In addition, research is being conducted to reduce the internal stress generated during diamond growth and to improve the crystallinity of the diamond. The compressive stress generated therein causes peeling and bowing from the substrate. This study aimed to synthesize heteroepitaxial single crystal diamonds with high crystallinity by surface modification. A diamond thin film was first grown on a sapphire/Ir substrate by MPECVD, and then etched with H₂ gas to modified the morphology and roughness of the surface. A secondary diamond layer was grown on the surface, and the internal stress, crystallinity of the diamond were investigated. As a result, the fabrication of single crystal diamonds with improved crystallinity was confirmed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.381-386
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• 2012

To study encapsulation method for large-area organic light emitting diodes (OLEDs), red emitting OLEDs were fabricated, on which $Alq_3$ as organic buffer layer and LiF and Al as inorganic protective layers were deposited to protect the damage of OLED by epoxy. And then the OLEDs were attached to flat glass by printing method using epoxy. The basic structure of OLED doped with rubrene of 1 vol.% as emitting layer is ITO(150 nm) / 2-TNATA(50 nm) / ${\alpha}$-NPD(30 nm) / $Alq_3$:Rubrene(30 nm) / $Alq_3$(30 nm) / LiF(0.7 nm) / Al(100 nm). In case of depositing $Alq_3$, LiF and Al and then attaching of flat glass onto OLED, current density, luminance, efficiency and driving voltage were not changed and lifetime was increased according to thickness of Al as inorganic protective layers. The lifetime of OLED/$Alq_3$/LiF/Al_4/glass structure was 139 hours increased by 15.8 times more than bare OLED of 8.8 hours and 1.6 times more than edge sealed OLED of 54.5 hours.