• Journal of the Microelectronics and Packaging Society
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• v.22 no.2
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• pp.61-68
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• 2015

Warpage analysis has been performed for top and bottom packages of thin package-on-packages processed with different epoxy molding compounds (EMCs). Warpage deviation was measured for packages molded with the same EMCs and also the warpage deviations of top and bottom substrates themselves were characterized in order to identify the major factor causing the package warpage. For the top and bottom packages processed with thin substrates, the warpage deviation of the substrates was large, which made it difficult to figure out the effect of EMC properties on the package warpage. Top packages, where the molding area of $13mm{\times}13mm$ covered the most of the substrate area ($14mm{\times}14mm$), exhibited similar warpage behavior with changing the temperature. On the other hand, bottom packages, where the molding area was only $8mm{\times}8mm$, exhibited the complex warpage behavior due to simultaneous occurrence of (+) and (-) warpages on the same package. Accordingly, the bottom packages showed dissimilar temperature-warpage behavior even being processed with the same EMCs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.111-114
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• 1999

Electroluminescence(EL) devices based on organic thin films have been attracted lots of interests in large-area light-emitting display. In this stuffy, an emissive layer was fabricated using Langmuir-Blodgett(LB) technique in organic light-emitting (OLEDs). This emissive organic material was synthesized and named PECCP[poly(3.6-N-2-ethylhexyl carbazolyl cyanoterephthalidene)] which has a strong electron donor group and an electron acceptor group in main chain repeated unit. This material has good solubility in common organic solvents such as chloroform. THF, etc, and has a good stability in air. The Langmuir-Blodgett(LB) technique has the advantage of precise control of the thickness down to the molecular scale, In particular, by varying the film thickness it is possible to investigate the metal/polymer interface. Optimum conditions for the LB film deposition are usually determined by investigating a relationship between a surface pressure $\pi$ and an effective are A occupied by one molecule on the subphase. The LB films were deposited on an indium-tin-oxide(ITO) glass at a surface pressure of 10 mN/m and dipping speed of 12 mm/min after spreading PECCP solution on distilled water surphase at room temperature, Cell structure was ITO/PECCP LB film/Alq$_3$/Al. We considered PECCP as a hole -transport layer inserted between the emissive layer and ITO. We also used Alq$_3$ as an emissive layer and an electron transport layer. We measured current-voltage(I-V) characteristics, UV/visible absorption, PL spectrum and EL spectrum of the OLEDs.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.4
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• pp.45-52
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• 2009

We proposed a new pixel circuit and driving method for the large-area, high-luminance AMOLED applications in this study. We designed with the low-temperature poly-silicon(LTPS) thin film transistors(TFTs) that has poor uniformity but stable characteristic. To improve the uniformity of an image, the threshold voltage($V_{TH}$) and the mobility of the TFTs can be compensated together. The proposed method overcomes the previous methods for mobility compensation, and that is profitable for large-area applications. Black data insertion was introduced to improve the characteristics for moving images. AMOLED panel can operate in two compensation mode, so the luminance degradation by mobility compensation can be released. The scan driver for controlling the pixel circuits were optimized, and the compensation mode can be controlled simply by that. Final driving signal has large timing margin, and the panel operates stably. The pixel circuit was designed for 14.1" WXGA top-emission ANGLED panel. The non-uniformity of the designed panel was estimated under 5% for the mobility compensation time of 1us.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.881-884
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• 2004

The robust and large-area applicable metal shadow masks with a high aspect ratio more than 20 are fabricated by a combination of micro-electro-discharge machining (${\mu}$-EDM) and electro chemical etching (ECE). After defining S/D contacts using a 100 ${\mu}m$ thick stainless steel shadow mask, the top-contact pentacene TFTs with channel length of 5 ${\mu}m$ showed routinely the results of mobility of 0.498 ${\pm}$ 0.05 $cm^2$/Vsec, current on/off ratio of 1.6 ${times}$ $10^5$, and threshold voltage of 0 V. The straightly defined atomic force microscopy (AFM) images of channel area demonstrated that shadow effects caused by the S/D electrode deposition were negligible. The fabricated pentacene TFTs have an average channel length of 5 ${\pm}$ 0.25 ${\mu}m$.

• Korean Journal of Materials Research
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• v.14 no.7
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• pp.477-481
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• 2004

High quality polycrystalline silicon is very critical part of the high quality thin film transistor(TFT) for display devices. Metal induced lateral crystallization(MILC) is one of the most successful technologies to crystallize the amorphous silicon at low temperature(below $550^{\circ}C$) and uses conventional and large glass substrate. In this study, we observed that the MILC behavior changed with abrupt variation of the amorphous silicon active pattern width. We explained these phenomena with the novel MILC mechanism model. The 10 nm thick Ni layers were deposited on the glass substrate having various amorphous silicon patterns. Then, we annealed the sample at $550^{\circ}C$ with rapid thermal annealing(RTA) apparatus and measured the crystallized length by optical microscope. When MILC progress from narrow-width-area(the width was $w_2$) to wide-width-area(the width was $w_1$), the MILC rate decreased dramatically and was not changed for several hours(incubation time). Also the incubation time increased as the ratio, $w_1/w_2$, get larger. We can explain these phenomena with the tensile stress that was caused by volume shrinkage due to the phase transformation from amorphous silicon to crystalline silicon.

• Journal of Sensor Science and Technology
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• v.27 no.1
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• pp.13-20
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• 2018

Gas sensors based on metal oxide semiconductors are used in numerous applications including monitoring indoor air quality and detecting harmful substances like volatile organic compounds. Nanostructures, for example, nanoparticles, nanotubes, nanodomes, and nanofibers have been widely utilized to improve gas sensing properties of metal oxide semiconductors, and this increases the effective surface area, resulting in participation of more target gas molecules in the surface reaction. In the recent times, 1-dimensional (1D) metal oxide nanostructures fabricated using anodic oxidation have attracted great attention due to their high surface-to-volume ratio with large-area uniformity, reproducibility, and capability of synthesis under ambient air and pressure, leading to cost-effectiveness. Here, we provide a brief overview of 1D metal oxide nanostructures fabricated by anodic oxidation and their gas sensing properties. In addition, recent progress on thin film-based anodic oxidation for application in gas sensors is introduced.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.166-169
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• 2006

We fabricated hexagonal copper sulfide $Cu_2S$ nanowires to obtain a larger contact area of $Cu_2S/CdS$ solar cell. Copper sulfide nanowires were grown on Cu foil at room temperature by gas-sol id reaction. The size, density and shape of nanowires seemed to be affected by the change or reaction time temperature, crystallographic orientation of Cu foil, and molar ratio of the mixed gas. We controled the length and the diameter of the nanowires and we obtained suitable nanowire arrays which has fitting size for uniform deposition with n-type CdS. CdS layer was deposited on the nanowire array by electrodeposition and it seemed to be uniform. The $Cu_2S/CdS$ nanowires/CdS junction showed diode characteristics, A large contact area is expected with the $Cu_2S/CdS$ nanowire structure as compared with the $Cu_2S/CdS$ thin film.

• Journal of the Korean Ceramic Society
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• v.48 no.1
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• pp.94-98
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• 2011

A Sn-doped $In_2O_3$ (ITO) nanowire photoelectrode was produced using a simple metal evaporation method at low synthesis temperature (< $540^{\circ}C$). The nanowire electrodes have large surface area compared with that of flat ITO thin film, and show low electrical resistivity of $5.6{\times}10^{-3}{\Omega}cm$ at room temperature. In order to apply ITO nanowires to the photoelectrodes of dye-sensitized solar cell (DSSC), those surfaces were modified by $TiO_2$ nanoparticles using a chemical bath deposition (CBD) method. The conversion efficiency of the fabricated $TiO_2$/ITO nanostructure-based DSSC was obtained at 1.4%, which was increased value by a factor of 6 than one without ITO nanowires photoelectrode. This result is attributed to the large surface area and superior electrical property of the ITO nanowires photoelectrode, as well as the structural advantages, including short diffusion length of photo-induced electrons, of the fabricated $TiO_2$/ITO nanostructure-based DSSC.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.527-532
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• 2001

Dry etching of copper film using $O_2$ plasma and H(hfac) has been investigated. A one-step process consisting of copper film oxidation with an $O_2$ plasma and the removal of surface copper oxide by the reaction with H(hfac) to form volatile Cu(hfac)$_2$ and $H_2O$ was carried but. The etching rate of Cu in the range from 50 to 700 /min was obtained depending on the substrate temperature, the H(hfac)/O$_2$ flow rate ratio, and the plasma power. The copper film etch rate increased with increasing RF power at the temperatures higher than 215$^{\circ}C$. The optimum H(hfac)/O$_2$ flow rate ratio was 1:1, suggesting that the oxidation process and the reaction with H(hfac) should be in balance. Cu patterning using a Ti mask was performed at a flow rate ratio of 1:1 on 25$0^{\circ}C$\ulcorner and an isotropic etching profile with a taper slope of 30$^{\circ}$was obtained. Cu dry patterning with a tapered angle which is necessary for the advanced high resolution large area thin film transistor liquid-crystal displays was thus successfully obtained from one step process by manipulating the substrate temperature, RF power, and flow rate ratio.

• Journal of Magnetics
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• v.6 no.2
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• pp.47-52
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• 2001

We present the magnetisation reversal dynamics of epitaxial Fe thin films grown on GaAs(001) and InAs(001) studied as a function of field sweep rate in the range 0.01-160 kOe/s using magneto-optic Kerr effect (MOKE). For 55 and 250 ${\AA}$ Fe/GaAs(001), we find that the hysteresis loop area A follows the scaling relation $A\propto H_{\alpha} \;with\; \alpha=0.03\sim0.05$ at low sweep rates and 0.33~0.40 at high sweep rates. For the 150${\AA}$ Fe/InAs(001) film, $\alpha$is found to be ~0.02 at low sweep rates and ~0.17 at high sweep rates. The differing values of $\alpha$ are attributed to a change of the magnetisation reversal process with increasing sweep rate. Domain wall motion dominates the magnetisation reversal at low sweep rates, but becomes less significant with increasing sweep rate. At high sweep rates, the variation of the dynamic coercivity $H_c{^*}$ is attributed to domain nucleation dominating the reversal process. The results of magnetic relaxation studies for easy-axis reversal are consistent with the sweeping of one or more walls through the entire probed region (~100$\mu m$). Domain images obtained by scanning Kerr microscopy during the easy cubic axis reversal process reveal large area domains separated by zigzag walls.