• Title/Summary/Keyword: Large area lithography

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Single-step UV nanoimprint lithography on a 4" Si wafer (4" Si 웨이퍼에 대한 single-step UV 나노임프린트 리소그래피)

  • 정준호;손현기;심영석;신영재;이응숙;최성욱;김재호
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.199-202
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    • 2003
  • Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a 5$\times$5$\times$0.09 in. quartz stamp whose critical dimension is 377 nm was fabricated using the etch process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply tile fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer Experiments have shown that the multi-dispensing method can enable UV-NIL rising a large-area stamp.

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Development of Induction Heating Apparatus for Rapid Heating of Metallic Mold (미세 임프린팅용 금속몰드의 급속가열을 위한 유도가열기구 개발)

  • Hong, S.K.;Lee, S.H.;Heo, Y.M.;Kang, J.J.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2007.05a
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    • pp.199-204
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    • 2007
  • Hot embossing, one of Nanoimprint Lithography(NIL) techniques, has been getting attention as an alternative candidate of next generation patterning technologies by the advantages of simplicity and low cost compared to conventional photolithographies. A typical hot embossing usually, however, takes more than ten minutes for one cycle of the process because of a long thermal cycling. Over the last few years a number of studies have been made to reduce the cycle time for hot embossing or similar patterning processes. The target of this research is to develop an induction heating apparatus for heating a metallic micro patterning mold at very high speed with the large-area uniformity of temperature distribution. It was found that a 0.5 mm-thick nickel mold can be heated from $25^{\circ}C$ to $150^{\circ}C$ within 1.5 seconds with the temperature variation of ${\pm}5^{\circ}C$ in 4-inch diameter area, using the induction heating apparatus.

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Fabrication of Master Replication by Nanoimprint Lithography (나노 임프린트 리소그라피에 의한 마스터 복제 공정)

  • Jeong, Myung-Yung
    • Proceedings of the KSME Conference
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    • 2003.04a
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    • pp.1078-1082
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    • 2003
  • A feasibility study for the fabrication of master replication with nanostructures by Nanoimprint Lithography (NIL) was investigated for application of polymer Photonic Bandgap (PBG) devices used in photonic IC. Large area gratings of $9{\times}15(mm^2)$ with p = 400 nm was successfully embossed on PMMA on silicon wafer and the embossing parameters (temperature, pressure, time) were established. A precise control of $O_2$ plasma Reactive Ion Etching (RIE) process time allowed window opening over the whole area despite the presence of wafer bending. Master replication with aspect ratio 1 was successfully fabricated, but master replication with aspect ratio 3 needs to optimize parameters. All replications were done in a NIL process.

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Facile Fabrication Process for Graphene Nanoribbon Using Nano-Imprint Lithography(NIL) and Application of Graphene Pattern on Flexible Substrate by Transfer Printing of Silicon Membrane (나노임프린트 리소그래피 기술을 이용한 그래핀 나노리본 트랜지스터 제조 및 그래핀 전극을 활용한 실리콘 트랜지스터 응용)

  • Eom, Seong Un;Kang, Seok Hee;Hong, Suck Won
    • Korean Journal of Materials Research
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    • v.26 no.11
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    • pp.635-643
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    • 2016
  • Graphene has shown exceptional properties for high performance devices due to its high carrier mobility. Of particular interest is the potential use of graphene nanoribbons as field-effect transistors. Herein, we introduce a facile approach to the fabrication of graphene nanoribbon (GNR) arrays with ~200 nm width using nanoimprint lithography (NIL), which is a simple and robust method for patterning with high fidelity over a large area. To realize a 2D material-based device, we integrated the graphene nanoribbon arrays in field effect transistors (GNR-FETs) using conventional lithography and metallization on highly-doped $Si/SiO_2$ substrate. Consequently, we observed an enhancement of the performance of the GNR-transistors compared to that of the micro-ribbon graphene transistors. Besides this, using a transfer printing process on a flexible polymeric substrate, we demonstrated graphene-silicon junction structures that use CVD grown graphene as flexible electrodes for Si based transistors.

Improvement of Temperature Uniformity in a Hot Plate for Thermal Nanoimprint Lithography by Installing Heat Pipes (히트 파이프를 이용한 열경화성 나노임프린트 장비용 열판의 온도 균일도 향상)

  • Park, Gyu Jin;Yang, Jin Oh;Lee, Jae Joong;Kwak, Ho Sang
    • Journal of the Semiconductor & Display Technology
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    • v.15 no.2
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    • pp.74-80
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    • 2016
  • This study presents a thermal device specially designed for thermal nanoimprint lithography equipments, which requires the capability of rapid heating and cooling, high temperature uniformity and the material strength to endure high stamping pressure. The proposal to meet these requirements is a planar-type hot plate extensible to a large area, in which long circular cartridge heaters and heat pipes are installed inside in parallel. The heat pipes are connected to the outside water cooling chamber. A hot plate made of stainless steel is fabricated with a dimension $240mm{\times}240mm{\times}20mm$. Laboratory experiments are conducted to examine the thermal performance of the hot plate. The results illustrate that the employment of heat pipes leads to a notable enhancement of temperature uniformity in the device and provides an efficient heat delivery from the hot plate to outside. It is verified that the suggested hot plate could be a feasible thermal tool for thermal nanoimprint lithography, satisfying the major design requirements.

Taguchi method-optimized roll nanoimprinted polarizer integration in high-brightness display

  • Lee, Dae-Young;Nam, Jung-Gun;Han, Kang-Soo;Yeo, Yun-Jong;Lee, Useung;Cho, Sang-Hwan;Ok, Jong G.
    • Advances in nano research
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    • v.13 no.2
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    • pp.199-206
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    • 2022
  • We present the high-brightness large-area 10.1" in-cell polarizer display panel integrated with a wire grid polarizer (WGP) and metal reflector, from the initial design to final system development in a commercially feasible level. We have modeled and developed the WGP architecture integrated with the metal reflector in a single in-cell layer, to achieve excellent polarization efficiency as well as brightness enhancement through the light recycling effect. After the optimization of key experimental parameters via Taguchi method, the roll nanoimprint lithography employing a flexible large-area tiled mold has been utilized to create the 90 nm-pitch polymer resist pattern with the 54.1 nm linewidth and 5.1 nm residual layer thickness. The 90 nm-pitch Al gratings with the 51.4 nm linewidth and 2150 Å height have been successfully fabricated after subsequent etch process, providing the in-cell WGPs with high optical performance in the entire visible light regime. Finally we have integrated the WGP in a commercial 10.1" display device and demonstrated its actual operation, exhibiting 1.24 times enhancement of brightness compared to a conventional film polarizer-based one, with the contrast ratio of 1,004:1. Polarization efficiency and transmittance of the developed WGPs in an in-cell polarizer panel achieve 99.995 % and 42.3 %, respectively.

Contact Print Lithography for Precise Transplantation of Three-dimensional Microstructures into a Microsystem (표면접촉 인쇄방식을 이용한 극미세 3차원 형상의 이식공정에 관한 연구)

  • Park, Sang-Hu;Jeong, Jun-Ho;Choi, Dae-Geun;Kim, Ki-Don;Altun, Ali Ozhan;Lee, Eung-Sug;Yang, Dong-Yol;Kong, Hong-Jin;Lee, Kwang-Sup
    • Journal of the Korean Society for Precision Engineering
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    • v.24 no.12
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    • pp.136-142
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    • 2007
  • Precise fabrication of three-dimensional (3D) self-standing microstructures on thin glass plates via two-photon induced polymerization (TPP) has been an important issue for innovative 3D nanodevices and microdevices. However, there are still issues remaining to be solved, such as building 3D microstructures on opaque materials via TPP and being able to implant them as functional parts onto practical systems. To settle these issues simply and effectively, we propose a contact print lithography (CPL) method using an ultraviolet (UV)-curable polymer layer. We report some of the possibilities and potential of CPL by presenting our results for transplanting 3D microstructures onto large-area substrates and also our examination of some of the effects of the process parameters on successful transplantation.

5-3: [Invited] Roll-to-Roll Manufacturing of Electronics on Flexible Substrates Using Self-Aligned Imprint Lithography (SAIL)

  • Kim, Han-Jun;Almanza-Workman, Marcia;Chaiken, Alison;Elder, Richard;Garcia, Bob;Jackson, Warren;Jeans, Albert;Kwon, Oh-Seung;Luo, Hao;Mei, Ping;Perlov, Craig;Taussig, Carl;Jeffrey, Frank;Beacom, Kelly;Braymen, Steve;Hauschildt, Jason;Larson, Don
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.82-85
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    • 2008
  • We are working towards large-area arrays of thin film transistors on polymer substrates using roll-to-roll (R2R) processes exclusively. Self-aligned imprint lithography (SAIL) is an enabler to pattern and align submicron features on meter-scaled flexible substrates in the R2R environment. The progress, current status and remaining issues of this new fabrication technology are presented.

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Analysis of Nonniformity of Residual Layer Thickness on UV-Nanoimprint Using an EPS(Elementwise Patterned Stamp) (EPS(Elementwise Patterned Stamp)를 이용한 UV 나노임프린트 공정에서 웨이퍼 변형에 따른 잔류층 분석)

  • Kim Ki-Don;Sim Young-Suk;Sohn Hyonkee;Lee Eung-Sug;Lee Sang-Chan;Fang Lingmei;Jeong Jun-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.29 no.9 s.240
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    • pp.1169-1174
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    • 2005
  • Imprint lithography is a promising method for high-resolution and high-throughput lithography using low-cost equipment. In particular, ultraviolet-nanoimprint lithography (UV-NIL) is applicable to large area imprint easily. We have proposed a new UV-NIL process using an elementwise patterned stamp (EPS), which consists of a number of elements, each of which is separated by channel. Experiments on UV-NIL are performed on an EVG620-NIL using the EPS with 3mm channel width. The replication of uniform sub 70 nm lines using the EPS is demonstrated. We investigate the nonuniformity of residual layer caused by wafer deformation in experiment with varying wafer thickness. Severely deformed wafer works as an obstacle in spreading of dropped resin, which causes nonuniformity of thickness of residual layer. Numerical simulations are conducted to analyze aforementioned phenomenon. Wafer deformation in the process is simulated by using a simplified model, which is a good agreement with experiments.

Size Tunable Nano Patterns Using Nanosphere Lithography with Ashing and Annealing Effect (나노 구체 리소그라피법에 Ashing과 Annealing 효과를 적용하여 크기조절 가능한 나노패턴의 제조)

  • Lee, Yu-Rim;Alam, Mahbub;Kim, Jin-Yeol;Jung, Woo-Gwang;Kim, Sung-Dai
    • Korean Journal of Materials Research
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    • v.20 no.10
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    • pp.550-554
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    • 2010
  • This work presents a fabrication procedure to make large-area, size-tunable, periodically different shape metal arrays using nanosphere lithography (NSL) combined with ashing and annealing. A polystyrene (PS, 580 ${\mu}m$) monolayer, which was used as a mask, was obtained with a mixed solution of PS in methanol by multi-step spin coating. The mask morphology was changed by oxygen RIE (Reactive Ion Etching) ashing and temperature processing by microwave heating. The Au or Pt deposition resulted in size tunable nano patterns with different morphologies such as hole and dots. These processes allow outstanding control of the size and morphology of the particles. Various sizes of hole patterns were obtained by reducing the size of the PS sphere through the ashing process, and by increasing the size of the PS sphere through annealing treatment, which resulted in tcontrolling the size of the metallic nanoparticles from 30 nm to 230 nm.