• Electrical & Electronic Materials
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• v.2 no.1
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• pp.1-13
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• 1989

Langmuir-Boldgett(LB)법에 의해서 두께 1층당 약 4.angs.의 폴리이미드 LB막을 제작된 폴리이미드 LB막을 양전극사이에 sandwich시킨 Al/Al$_{2}$ $O_{3}$ /폴리이미드 LB막/Al(Au)구조의 소자를 이용하여 전기적 특성을 조사하였다. 전기저항이 대단히 큰 폴리이미드 LB막과 전기저항이 작은 $Al_{2}$ $O_{3}$막과의 상호작용에 의해 폴리이미드 LB막의 파괴전계는 약 1*$10^{8}$V/cm이었으며 터널전류는 이론값에 비하여 매우 작은 전류의 값을 나타내었다. 이와같은 현상은 전압의 대부분이 폴리이미드 LB막에 만이 인가되며 터널전류는 $Al_{2}$ $O_{3}$막에 의해 제한되기 때문이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.428-431
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• 2002

Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultrasmall size. The structure of MIM(Metal-Insulator-Metal) device is Cr-Au/ PBLG/ Al. the number of accumulated layers are 1, 3, 5, 7, 9. The I-V characteristic of the device is measured from 0[V] to 2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because PBLG system have a accumulated layers the maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.74-77
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• 1990

In this paper, we study the electrical conduction mechanism in Langmuir-Boldgett(LB) ultra thin films. The LB device has a metal/Lb films/metal sandwich structure, where metal is electrode. In our experiments, the temperature does not depend on the current at below 0$^{\circ}C$. This phenomena show that the electrical conduction current is a tunnel current inherent to LB ultra thin films.

• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.181.3-181
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• 2001

Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultrasmall size. In this paper, to do research for medical artificial organs as well as principal parts living body thin film application, electrical properties of L-$\alpha$-DLPC Langmuir(L) films were investigated a displacement current measuring technique with pressure stimulation. We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 20[mN/m]. LB layers of L-$\alpha$-DLPC deposited by LB method ...

• 전자공학회논문지 IE
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• v.43 no.4
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• pp.99-104
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• 2006

The Langmuir-Blodgett(LB) technique has attracted considerable interest in the fabrication of electrical and electronic devices. Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuir-films. MDC flowing across monolayers is analyzed using a rod-like molecular model. A linear relationship between the monolayer compression speed u and the molecular area Am. Compression speed a was about 30, 40, 50mm/min. Langmuir-Blodgett(LB)layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 9$\sim$21. Also, we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V. The I-V characteristics of the device are measured from -3 to +3[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.166-169
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• 1996

It is well known that the metallo-phthalocyanines (MPcs) are sensitive to toxic gaseous molecules such as NO$_2$ and also chemically and thermally stable and it is recently reported that SnO$_2$ thin films have a selective sensitivity to NO$_2$ and SO$_2$ gas. Therefore, it is interesting to prepare phthalo-cyanine Langmuir-Boldgett(LB) films containing tin as a chemical sensor for NO$_2$ and SO$_2$ gas and test the selectivity with these tin containing LB films. First, in this study, ultra thin films of Octa (2-ethylhexyloxy) tin-phthalocyanine were prepared on various substrates by LB method. $\pi$-A isotherm and transfer characteristics of these films were investigated. The formation of these films was determined by ellipsometry. Intrinsic current-voltage(I-V) characteristics of these films were also measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.351-354
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• 2001

We fabricated organic electroluminescent(EL) devices with mixed emitting layer of poly (N- vinylcarbazole) ( PVK) , 2,5-bis (5-tert-butyl -2- benzoxaBoly) thiophene ( BBOT) , N,N-diphenyl-N,N- (3-methyphenyl) -1,1-biphenyl-4, 4-thiamine(TPD) and poly(3-hexylthiophene) (P3HT) deposited by LB(Langumuir-Boldgett) method. From the AFM(atomic force microscope) images, the monolayer containing 30% of AA(arachidic acid) showed a roughness value of 28$\AA$. In the voltage-current characteristics of ITO/Emitting layer/BBOT/LiF/A1 devices, current density much smaller than that of the spin-coated devices having a same thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.287-290
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• 2000

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 20[mN/m]. LB layers of Arac. acid deposited by LB method were deposited onto y-type silicon wafer as x, y, z-type film. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/arachidic acid/Al, the number of accumulated layers. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V].

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.92-94
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• 2003

Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials, the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultra small size. In this paper, detected displacement current using PBLG and PBDG, deposition and observed the electrical characteristics to each 1, 3, 5, 7, 9 layers by LB method. Maximum value of change ratio of displacement current by the detected speed and temperature appeared almost lineally, could confirm that it are in comparison relation each other speed-temperature and displacement current. The structure of manufactured device is MIM. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

• Polymer(Korea)
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• v.24 no.1
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• pp.90-96
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• 2000

Organic electroluminescent (EL) device was fabricated with Alq$_3$ as an emitting material and PDPMA ultra thin film prepared by Langmuir-Boldgett technique as a polymer hole transport layer. A stable condensed PDPMA monolayer was obtained using arachidic acid as a surface active material. The thickness and absorbance of PDPMA LB film increased line-arly with the layer numbers. The organic multilayered device consisted of ITO/PDPMA LB film (19 layers)/Alq$_3$/Al emitted green light with brightness of 2500 cd/m$^2$ at a DC 14 V Especially, the drive voltage of EL device having PDPMA LB film of 15 layers exhibited the value as low as 4 V. The effects of thickness control and molecular orientation in the PDPMA LB film on EL performance were discussed.