• Korean Journal of Materials Research
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• v.10 no.8
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• pp.564-568
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• 2000

Langmuir-Blodgett(LB) 법은 미래의 분자전자소자를 위한 가장 유력한 수단이며, 이러한 분자박막 소자는 그 성질이 분자는 배향에 영향을 박데 되므로 현재 새로운 물질을 이용하여 분자전자소자의 제작에 있어 관심을 모으고 있다. 본 연구에서는 (N-docosyl quinolinium)-TCNQ(1:2) 전하 이동 착물 LB 막의 분자 배향을 UV/vis 편광흡수 스펙트럼과 FT-IR transmission 및 reflection-absorption 스펙트럼의 흡수강도를 비교하여 정량적으로 평가하였다. 그 결과 TCNQ의 transition dipole moment의 각은 약 56~58。 였으며, 알킬 고리의 경사각은 약 11.1~13。였다. 제작된 Z-형 LB 막의 표면은 고압에서 중앙 높이 차가 3~4$\AA$으로 평탄하였다.

• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.72-76
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• 2020

The author demonstrated organic ferroelectric thin-film transistors with ferroelectric materials of P(VDF-TrFE) and an amorphous oxide semiconducting In-Ga-Zn-O channel on the silicon substrates. The organic ferroelectric layers were deposited on an oxide semiconductor layer by Langmuir-Blodgett method and then annealed at 128℃ for 30min. The carrier mobility and current on/off ratio of the memory transistors showed 9 ㎠V^-1s^-1 and 6 orders of magnitude, respectively. We can conclude from the obtained results that proposed memory transistors were quite suitable to realize flexible and werable electronic applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.143-146
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• 1999

In this study, Ultra-thin films of (N-ducosyl quinolinium)-TCNQ(1:2) complex were prepared on the hydrophilic substrate by Langmuir-Blodgett(LB) technique. By measure of UV-vis spectra and capacitance, deposition status was confirmed together with the thickness of natural oxidized aluminum film inside a device and dielectric constant of (N-docosyl quinolinium)-TCNQ(1:2) complex. The electrical properties of (N-docosyl 7uin7linium)-TCNQ(1:2) complex were investigated at room temperature. The conductivity of this film measured by the direction uf either vertical or horizontal axis is results in a quite different value.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.190-190
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.189-189
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.148-148
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.54-54
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.05a
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• pp.136-137
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• 1994

• Journal of the Korean Applied Science and Technology
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• v.29 no.3
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• pp.421-428
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• 2012

We investigated an electrochemical properties for Langmuir-Blodgett (LB) nano-films of polyimide and phospholipid mixture. LB films of polyamic acid and phospholipid monolayer were deposited by the Langmuir-Blodgett method on the indium tin oxide(ITO) glass. The electrochemical properties measured by cyclic voltammetry with three-electrode system(an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode) in $KClO_4$ solution. The current of reduction and oxidation range was measured from 1650 mV to -1350 mV, continuously. The scan rates were 50, 100, 150, 200 and 250 mV/s, respectively. As a result, monolayer LB films of polyamic acid and phospholipid mixture was appeared on irreversible process caused by the reduction current from the cyclic voltammogram. Diffusion coefficient (D) effect in the polyamic acid and phospholipid mixture was used in the LAPC with LLPC fewer than the diffusion coefficient values.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.147-151
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• 1996

Brewster angle microscopy(BAM) makes it possible to observe the monolayer states on the water subphase and the phase transitions from a gaseous phase via a expanded phase to a condensed phase. Also BAM can be used to observe the films on the solid substrate such as Langmuir-Blodgett(LB) films. In this Paper Polyamic Acid Alkylamine Salts(PAAS) was used for forming L films and LB films and $\pi$-A isotherm showed pressure of each phase. We obtained BAM images as surface pressure increased. Images of LB films were compared with data from ellipsometry which was used to measure the film thickness. Images of both L films and LB films were analyzed with computer in the point of brightness.