• Journal of Life Science
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• v.13 no.5
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• pp.576-581
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• 2003

Recombinant Arabidopsis non-specific lipid transfer proteins (nsLTPs) was purified from yeast. In order to determine the effect of nsLTPs for an production of anthocyanin in perilla leaves, ‘Manchudlggae’ cultivar was grown at pots that had been applied with different concentration of nsLTPs. The anthocyanin content in AtnsLTP treated leaves increased above two-fold higher than that in control. Also chlorophyll content was increased 16%. It was presumed that AtnsLTPs could be applied to increase high quality of perilla leaves.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.417-420
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• 2007

A 12k-bit SRAM has been developed for line memory of system-on-glass (SoG) with lowtemperature poly-silicon (LTPS) thin film transistor (TFT). For accurate sensing even with the large variation and mismatches in the characteristics of LTPS TFT, mismatch immune sense amplifier is developed. The SRAM shows 30ns read access time with 7V supply voltage while dissipating 4.05mW and 1.75mW for write and read operation, respectively

• Journal of Information Display
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• v.4 no.4
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• pp.4-7
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• 2003

The world largest 21.3" LTPS LCD has been successfully developed using SLS crystallization technology. Integration of gate circuit, transmission gate and level shifter was successfully performed in a large area display. Uniform and high performance of high quality grains of SLS technology make it possible to realize a uniform large size LTPS TFT-LCD with half the number of data driver IC's that is typically used in a-Si LCD. High aperture ratio of 65 % was achieved using an organic inter insulating method which lead to a high brightness of 500 cd/$cm^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.151-151
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• 2010

In this paper, the electrically properties of nonvolatile memory (NVM) using multi-stacks gate insulators of oxide-nitride-oxynitride (ONOn) and active layer of the low temperature polycrystalline silicon (LTPS) were investigated. From hydrogenated amorphous silicon (a-Si:H), the LTPS thin films with high crystalline fraction of 96% and low surface's roughness of 1.28 nm were fabricated by the metal induced crystallization (MIC) with annealing conditions of $650^{\circ}C$ for 5 hours on glass substrates. The LTPS thin film transistor (TFT) or the NVM obtains a field effect mobility of ($\mu_{FE}$) $10\;cm^2/V{\cdot}s$, threshold voltage ($V_{TH}$) of -3.5V. The results demonstrated that the NVM has a memory window of 1.6 V with a programming and erasing (P/E) voltage of -14 V and 14 V in 1 ms. Moreover, retention properties of the memory was determined exceed 80% after 10 years. Therefore, the LTPS fabricated by the MIC became a potential material for NVM application which employed for the system integration of the panel display.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.179-184
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• 2023

We propose the modeling methodology of CMOS inverter made of LTPO TFT using a machine learning. LTPO can achieve advantages of LTPS TFT with high electron mobility as a driving TFT and IGZO TFT with low off-current as a switching TFT. However, since the unified model of both LTPS and IGZO TFTs is still lacking, it is necessary to develop a SPICE-compatible compact model to simulate the LTPO current-voltage characteristics. In this work, a generic framework for combining the existing formula of I-V characteristics with artificial neural network is presented. The weight and bias values of ANN for LTPS and IGZO TFTs is obtained and implemented into PSPICE circuit simulator to predict CMOS inverter. This methodology enables efficient modeling for predicting LTPO TFT circuit characteristics.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.10
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• pp.34-41
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• 2010

We proposed the new pixel compensation circuit with high aperture ratio and the driving method for the large-area, low-power AMOLED applications in this study. We designed with the low-temperature poly-silicon(LTPS) thin film transistors(TFTs) that has poor uniformity but good mobility and stability. To lower the error rate of the pixel circuit and to improve the aperture ratio for bottom emission method, we simplified the pixel compensation circuit. Because the proposed pixel compensation circuit with high aperture ratio has very low contrast ratio for conventional driving methods, we proposed the new driving method and circuit for high contrast ratio. Black data insertion was introduced to improve the characteristics for moving images. The pixel circuit was designed for 19.6" WXGA bottom-emission AMOLED panel, and the average aperture ratio of the pixel circuit is improved from 33.0% to 41.9%. For the TFT's $V_{TH}$ variation of ${\pm}0.2\;V$, the non-uniformity and contrast ratio of the designed panel was estimated under 6% and over 100000:1 respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.528-531
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• 2007

This paper presents development of a 4-inch WVCA OCB (Optical Compensated Bend)-mode display panel. The developed panel has a built-in circuit of the LTPS (low temperature poly-Si)-integrated gate driver circuit with the function of black data insertion. The function of black data insertion makes it possible to realize rapid response time of 4ms and wide viewing angle of $160^{\circ}$. We also applied the RGBW pixel structure for the brighter image with relatively low power consumption. The developed panel showed improved optical efficiency and driving capability of stable image quality for OCB mode. We developed high efficiency OCB-mode panel with built-in integrated gate driver circuit using LTPS on panel without any external driver IC.

• Journal of Information Display
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• v.10 no.1
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• pp.33-36
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• 2009

A new hybrid silicon thin-film transistor (TFT) fabrication process using the DPSS laser crystallization technique was developed in this study to realize low-temperature poly-Si (LTPS) and a-Si:H TFTs on the same substrate as a backplane of the active-matrix liquid crystal flat-panel display (AMLCD). LTPS TFTs were integrated into the peripheral area of the activematrix LCD panel for the gate driver circuit, and a-Si:H TFTs were used as a switching device of the pixel electrode in the active area. The technology was developed based on the current a-Si:H TFT fabrication process in the bottom-gate, back-channel etch-type configuration. The ion-doping and activation processes, which are required in the conventional LTPS technology, were thus not introduced, and the field effect mobility values of $4\sim5cm^2/V{\cdot}s$ and $0.5cm^2/V{\cdot}s$ for the LTPS and a-Si:H TFTs, respectively, were obtained. The application of this technology was demonstrated on the 14.1" WXGA+(1440$\times$900) AMLCD panel, and a smaller area, lower power consumption, higher reliability, and lower photosensitivity were realized in the gate driver circuit that was fabricated in this process compared with the a-Si:H TFT gate driver integration circuit

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.4
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• pp.45-52
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• 2009

We proposed a new pixel circuit and driving method for the large-area, high-luminance AMOLED applications in this study. We designed with the low-temperature poly-silicon(LTPS) thin film transistors(TFTs) that has poor uniformity but stable characteristic. To improve the uniformity of an image, the threshold voltage($V_{TH}$) and the mobility of the TFTs can be compensated together. The proposed method overcomes the previous methods for mobility compensation, and that is profitable for large-area applications. Black data insertion was introduced to improve the characteristics for moving images. AMOLED panel can operate in two compensation mode, so the luminance degradation by mobility compensation can be released. The scan driver for controlling the pixel circuits were optimized, and the compensation mode can be controlled simply by that. Final driving signal has large timing margin, and the panel operates stably. The pixel circuit was designed for 14.1" WXGA top-emission ANGLED panel. The non-uniformity of the designed panel was estimated under 5% for the mobility compensation time of 1us.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.302-305
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• 2008

We present a new touch screen method, which utilizes the variation of liquid crystal capacitance according to the touch event on the screen. It is integrated in the AMLCD with the conventional LTPS process. Its resolution is same as the display resolution as well as performs the multi-touch sensing function basically. The design concept and the operation are verified with the SPICE simulation.