• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2019.05a
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• pp.475-476
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• 2019

L-shaped tunneling field-effect-transistor (LTFET) is considered a superior device over conventional TFETs. However, experimentally demonstrated LTFET demonstrated poor subthreshold characteristics which was attributed to trap-assisted-tunneling (TAT) caused by presence of trap states. In this paper, TAT mechanism in the experimentally demonstrated LTFET is investigated with the help of band diagram and TAT recombination rate (GTAT).

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.10a
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• pp.241-242
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• 2017

Part of the channel in L-shaped tunnel field-effect transistor (LTFET) is very thin and suffers from quantum confinement effect. Role of quantum confinement effect on band-to-band-tunneling (BTBT) of LTFET was investigated using numerical simulation and band diagram analysis. It was found that quantum confinement effect significantly affects the BTBT mechanism of LTFET devices.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.05a
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• pp.171-172
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• 2018

Dual gate L-shaped tunnel field-effect-transistor (DG-LTFET) is presented in this study. DG-LTFET achieves near vertical subthreshold slope (SS) and its ON current is also found to be higher then both conventional TFET and LTFET. This device could serve as a potential replacement for conventional complimentary metal-oxide-semiconductor (CMOS) technology.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.10a
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• pp.512-513
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• 2018

Trap-assisted-tunneling (TAT) degrades subthreshold slope of real-world tunneling field-effect-transistors (TFET) and it should be considered in the simulation. However, its mechanism is not very well understood in line tunneling type L-shaped TFET (LTFET). This study investigates TAT mechanism in LTFETs using dynamic nonlcoal Schenk model. Both phonon assisted and direct band to trap tunneling events are considered in this study.

• Journal of information and communication convergence engineering
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• v.19 no.4
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• pp.263-268
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• 2021

Although the compact capacitance model of point tunneling types of tunneling field-effect transistors (TFET) has been proposed, those of line tunneling types of TFETs have not been reported. In this study, a compact capacitance model of an L-shaped TFET (LTFET), a line tunneling type of TFET, is proposed using the previously developed surface potentials and current models of P- and L-type LTFETs. The Verilog-A LTFET model for simulation program with integrated circuit emphasis (SPICE) was also developed to verify the validation of the compact LTFET model including the capacitance model. The SPICE simulation results using the Verilog-A LTFET were compared to those obtained using a technology computer-aided-design (TCAD) device simulator. The current-voltage characteristics and capacitance-voltage characteristics of N and P-LTFETs were consistent for all operational bias. The voltage transfer characteristics and transient response of the inverter circuit comprising N and P-LTFETs in series were verified with the TCAD mixed-mode simulation results.