• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.647-655
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• 2003

Commonly used SAW duplexers have a difficulty on manufacture so that a transmission line is printed on the package or an LTCC multi-layer is needed because a quarter-wave transmission line which is a kind of an isolation network is applied to the SAW duplexers. In this study, new structures of one chip type SAW duplexers are proposed. In the proposed structure, Tx and Rx SAW ladder filters and isolation networks are located on a single 36LiTaO$_3$ piezoelectric substrate. The manufacture process is very simple than commonly used product. It is possible to improve tile performance by means of optimizing the micro-strip line lumped elements. It is easy to integrate and modulate with other surrounding components. The optimal design techniques can be applied to other kind of multi-port devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.269-272
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• 2003

Nowadays, the study on the ceramic components and modules using LTCC is being performed and on the passives included in modules is being done also. But the characteristics of passives changes in ceramic module due to the coupling between patterns, so each block in module must be analyzed in the state of module including coupling factors. In our research each block of VCO, resonator part, oscillator part, output part is measured and analyzed and that allows the prediction of behavior of VCO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.259-259
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• 2007

The low temperature sintering of dolomite type borates, $CaZr(BO_3)_2$[CZB] ceramics and their microwave dielectric properties were investigated The sintering temperature of CZB ceramics could be reduced from $1150^{\circ}C$ to $925^{\circ}C$ by the addition of sintering additive. $CaZrO_3$, $ZrO_2$ and $CaB_2O_4$ second phases were found in the CZB ceramics. The syntheses, sintering properties, microstructures, and dielectricnproperties of dolomite-type borates were examined by XRD, thermal analysis, electron microscopy, network analyzer, and the results are discussed intensively. The compatibility with silver electrode was also explored.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.176-176
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• 2009

Influences of dose and particle size of $Al_2O_3$ filler and sintering time on the dielectric properties of $Al_2O_3$ filler/CaO-$Al_2O_3-SiO_2$ (CAS) glass composites were investigated with a view to applying the composites to the substrate material in low temperature co-firing ceramic (LTCC) technology. The increased addition of $Al_2O_3$ filler with the particle size of 1 ${\mu}m$ monotonically decreased the density of the sintered specimen at a given temperature, while sintering of the 10 wt% $Al_2O_3$ added specimen at $925^{\circ}C$ for 2 h demonstrated 96.0 % of the relative density, dielectric constant of 6.34, and quality factor of 2,760 GHz. As for the influence of the particle size of the $Al_2O_3$ filler, there existed an optimum particle size (30 ${\mu}m$) to ensure successful densification (96.5 %) of the 10 wt% $Al_2O_3$/CAS composites at $925^{\circ}C$ for 2 h, at which condition the specimen demonstrated dielectric constant of 5.45 and quality factor of 3,740 GHz. When the influence of the sintering time of the 10 wt% $Al_2O_3$) (30 ${\mu}m$) added specimen was investigated at the sintering temperature of $925^{\circ}C$, an overly long sintering time degraded dielectric properties due to the over-sintering and the significant growth of the second phase such as anorthite, while the sintering for 4 h demonstrated 96.58 % of the relative density, dielectric constant of 5.4, and quality factor of 4,050 GHz. These results demonstrate the feasibility of the investigated material as the substrate material in LTCC technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.135-138
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• 2002

VCO(Voltage Controlled Oscillator) is one of the main components governing the size, performance and power consumption of telecommunication devices. As the devices become much smaller, VCO need to have much smaller size with better characteristics. Buried type passive components of L,C,R were developed previously and the structure of these components are good for minimizing the size of VCO. Our own library of passive components is used in simulation and fabrication of VCO circuit, and surface mounted components like varactor diode are analysed using the measurement circuit designed by ourselves. Two-Dimensional simulation of VCO circuit and local three-Dimensional structure simulation are performed and their relation is obtained. In structure of multi-layered VCO, some components governing the characteristics of VCO are selected and placed on the top of oscillator for the good tuning process. In resonator part, the stripline structure and low loss glass/ceramic material are used to get higher Q value. In our research, a VCO oscillates in the 2.3∼2.36 GHz band is developed.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1046-1054
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• 2001

Effects of B$_2$O$_3$and CuO addition on the microwave dielectric properties of the PbWO$_4$-TiO$_2$ceramics were investigated in order to use this material as an LTCC material for fabrication of a multilayered RF passive components module. We found that PbWO$_4$could be used as an LTCC material because of its low sintering temperature (8$50^{\circ}C$) and fairy good microwave dielectric properties($\varepsilon$$_{r}$=21.5, Q$\times$f$_{0}$=37200 GHz and $\tau$$_{f}$ =-31 ppm/$^{\circ}C$). In order to stabilize $\tau$$_{f}$ of PbWO$_4$, TiO$_2$was added to the PbWO$_4$and the mixture was sintered at 8$50^{\circ}C$. A near zero $\tau$$_{f}$ value (+0.2 ppm/$^{\circ}C$) was obtained with 8.7 mol% TiO$_2$addition. $\varepsilon$r and Q$\times$f$_{0}$ values were 22.3 and 21400 GHz, respectively. It was believed that the decrement of Q$\times$f$_{0}$ value with TiO$_2$addition was resulted from increasing grain boundary. In order to improve Q$\times$f$_{0}$, various amounts of B$_2$O$_3$and CuO were added to the 0.913PbWO$_4$-0.087TiO$_2$mixture. The optimum amount of CuO was 0.05 wt%. At this addition, the 0.913PbWO$_4$-0.087TiO$_2$ceramic showed $\varepsilon$$_{r}$=23.5, $\tau$$_{f}$ =-2.2ppm/$^{\circ}C$, and Q$\times$f$_{0}$=32900 GHz after sintered at 8$50^{\circ}C$. In case of B$_2$O$_3$addition, the optimum amount range was 1.0~2.5 wt% at which we could obtain following results; $\varepsilon$$_{r}$=20.3~22.1, Q$\times$f$_{0}$=48700~54700 GHz, and $\tau$$_{f}$ =+2.4~+8.2ppm/$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.81-81
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• 2009

Non-sintered Alumina films were fabricated via inkjet printing processes without a high temperature sintering process. The packing density of these inkjet-printed alumina films measured around 60%. Polymer resin was infiltrated thru these non-sintered films in order to fill out the 40% of voids constituting the rest of the inkjet-printed films. The concept of inkjet-printed Alumina-Resin hybrid materials was designed in order to be applicable to the ceramic package substrates for 3D-system module integration which may possibly substitute LTCC-based 3D module integration. So, the dielectric properties of these inkjet-printed $Al_2O_3$ hybridmaterialsareofourgreatinterest. We have measured dielectric constant and dissipation factor of the inkjet-printed $Al_2O_3$-resinhybridfilmsbyvaryingtheamountofresininfiltratedthruthe$Al_2O_3$films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.492-498
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• 2002

In this paper, we present the simulation results of multi-layer VCO(voltage controlled oscillator), which is composed of resonator, oscillator, and buffer circuit, using EM simulator and nonlinear RF circuit simulator. EM simulator is used for obtaining the EM(Electromagnetic) characteristics of conductor pattern as well as designing the multi-layer VCO. Obtained EM characteristics were used as real components in nonlinear RF circuit simulation. Finally the overall VCO was simulated by the nonlinear RF circuit simulator. The material for the circuit pattern was Ag and the dielectric was Dupont 951AT, which will be applied for LTCC process. The structure of multi-layer VCO is constructed with 4 conducting layer. Simulated results showed that the output level was about 4.5 [dBm], the phase noise was -104 [dBc/Hz] at 30 [kHz] offset frequency, the harmonics -8 dBc, and the control voltage sensitivity of 30 [MHz/V] with a DC current consumption of 9.5 [mA]. The size of VCO is $6{\times}9{\times}2 mm$(0.11 [cc]).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.653-656
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• 2002

In this paper, we present the simulation results of multi-layer VCO(voltage controlled oscillator), which is composed of resonator, oscillator, and buffer circuit, using EM simulator and nonlinear RF circuit simulator. EM simulator is used for obtaining the EM(Electromagnetic) characteristics of conductor pattern as well as designing the multi-layer VCO. Obtained EM characteristics were used as real components in nonlinear RF circuit simulation. Finally the overall VCO was simulated by the nonlinear RF circuit simulator. The material for the circuit pattern was Ag and the dielectric was DuPont 951AT, which will be applied for LTCC process. The structure of multi-layer VCO is constructed with 4 conducting layer. Simulated results showed that the output level was about 4.5 [dBm], the phase noise was -104 [dBc/Hz] at 30 [kHz] offset frequency, the harmonics -8 dBc, and the control voltage sensitivity of 30 [MHz/V] with a DC current consumption of 9.5 [mA]. The size of VCO is $6{\times}9{\times}2$ mm(0.11[cc]).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.541-544
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• 2002

In this study, a new LTCC material using $ZnWO_4$-LiF system was attempted with respect to use as a capacitor layer in Front-End Module. Pure $ZnWO_4$ must be sintered above $1050^{\circ}C$ in order to obtain up to 98% of full density. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and $-70ppm/^{\circ}C$, respectively. LiF addition resulted in an liquid phase formation at $810^{\circ}C$ due to interaction between $ZnWO_4$ and LiF. Therefore $ZnWO_4$ with 0.5~1.5wt% LiF could be densified at $850^{\circ}C$. Addition of LiF slightly lowered the dielectric constant from 15.5 to 14.2~15. In the given LiF addition range, the sintering shrinkage increased with increasing LiF content. $Q{\times}fo$ value, however, decreased with increasing LiF content(or increasing densification). This is originated from the interaction between the liquid phase and $ZnWO_4$ and inhomogeneity of grain morphology.