• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.77.2-77
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• 2000

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.146.1-146
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• 2003

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.6
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• pp.260-262
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• 2005

Thickness optimization of heavily doped p-type seeding layer was studied to improve performance of thin film silicon solar cell. We used liquid phase epitaxy (LPE) to grow active layer of $25{\mu}m$ thickness on $p^+$ seeding layer. The cells with $p^+$ seeding layer of $10{\mu}m\;to\;50{\mu}m$ thickness were fabricated. The highest efficiency of a cell is 12.95%, with $V_{oc}=633mV,\;J_{sc}=26.5mA/cm^2$, FF = 77.15%. The $p^+$ seeding layer of the cell is $20{\mu}m$ thick. As thicker seeding layer than $20{\mu}m$, the performance of the cell was degraded. The results demonstrate that the part of the recombination current is due to the heavily doped seeding layer. Thickness of heavily doped p-type seeding layer was optimized to $20{\mu}m$. The performance of solar cell is expected to improve with the incorporation of light trapping as texturing and AR coating.

• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.201-205
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• 1989

In this study, the vertical type LPE system has been developed by fully hand-made. The temperature fluctuation and minimum cooling rate of this LPE system are within $\pm$0.05$^{\circ}C$ and 0.15$^{\circ}C$/min, respectively. It is considered that these properties are enough to grow III-V semiconductor compounds single crystals by liquid phase epitaxy method. Futhermore in this study. 1.3${\mu}{\textrm}{m}$ GaInAsP/InP single crystal growing has been carried out by this system. It has been obtained that the growing rate was about 0.72${\mu}{\textrm}{m}$/min for InP binary layer and 0.36${\mu}{\textrm}{m}$/min for GaInAsP quarternary layer under 0.6$^{\circ}C$/min cooling rate condition.

• Korean Journal of Optics and Photonics
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• v.7 no.3
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• pp.266-271
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• 1996

In this study the evaluation of RWG MQW-LD fabricated with our vertical LPE system has been carried out with measuring its optical characteristics. This laser diode operated in lateral single mode as designed, and it showed 77% of internal quantum efficiency, 18cm of internal loss and 5.5$\AA$/$^{\circ}C$ of the thermal characterictic of the lasing wavelength. From these results we conclude that the vertical LPE system are fairly good and it might he useful to fabricate MQW wafer for laser diode.

• Journal of the Korean Ceramic Society
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• v.39 no.6
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• pp.589-593
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• 2002

The single crystalline thick fi1ms of Bi:Y$_3$Fe$_{5}$ $O_{12}$(Bi:YIG) were grown on (GdCa)$_3$(GaMgZr)$_{5}$ $O_{12}$(SGGG) by Liquid Phase Epitaxy (LPE). The changes of lattice mismatch and Bi concentration were investigated in the thick film growth as a function of PO/Bi$_2$ $O_3$ molar ratio, with keeping constant of substrate rotation speed, supercooling and growth time. It was grown that the lattice constant of the garnet single crystalline thick films and Bi content increased with decreasing of PO/Bi$_2$ $O_3$ molar ratio. Bi concentration decreased with increasing of the film thickness.

• Journal of the Korean Ceramic Society
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• v.40 no.7
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• pp.672-676
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• 2003

The single crystalline thick films of Y$_3$Fe$\sub$5/O$\sub$12/(YIG), Y$_3$Fe$\sub$5/O$\sub$12/(Bi:YIG), (TbBi)$_3$(FeAlGa)$\sub$5/O$\sub$12/ (TbBi:YIG) were grown on (GdCa)$_3$(GaMgZr)$\sub$5/O$\sub$12/ (SGGG) by Liquid Phase Epitaxy (LPE). The change of lattice mismatch, Bi concentration, characteristic of magnetic and surface morphology were investigated in the thick film growth as a function of species and amount of chemical element, while substrate rotation speed, supercooling and growth time were kept constant. It was observed that the lattice constant of garnet single crystalline thick films of TbBi:YIG (12.500 ${\AA}$) is closed to the one of the substrate (12.496 ${\AA}$). Besides magnetic field of saturation exhibits excellent results (150 Oe).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.288-291
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• 2002

We developed a new RF indirect-heating LPE furnace. The thermal gradient of our newly developed furnace is less than that of direct heating, and is as gentle as that of the resistance-heating LPE furnace. With this new furnace, the heating and/or cooling is faster than that of the resistance-heating furnace. Impurity-doped YIG film was grown from a $PbO-B_{2}O_{3}$, based flux on a (111) GGG substrate. To study the effect of the impurities on the MSSW threshold power and the saturation response time, we used two microstrip lines to excite and propagate the MSSW at 1.9 GHz. The MSSW threshold power and saturation response time was found to be related to the $\Delta$H.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.5
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• pp.193-198
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• 2004

Using the $PbO-B_2O_3-Bi_2O_3$ flux system, $(TbBi)_3(FeAIGa)_5O_{12}(TbIG)$, $(EuBi)_3(FeAIGa)_5O_{12}(EuIG)$ and $(EuTbBi)_3(FeAIGa)_5O_{12}(EuTbIG)$ films were grown on $(GdCa)_3(GaMgZr)_5O_{12}(SGGG)$ substrates by the liquid phase epitaxy (LPE). The saturation magnetization of the grown TbIG, EuIG and EuTbIG films was about 150, 950 and 125 Oe, respectively. The TbIG films resulted in the single magnetic domain while the EuIG and EuTbIG films were observed to be the multi magnetic domains by magnetic force microscope (MFM).

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.687-694
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• 1994

Heteroepitaxial InP/GaAs layers were grown using the selective liquid phase epitaxy (SLPE) technique. It was observed that the optimum LPE conditions were $660^{\circ}C$ growth temperature, $5^{\circ}C$ supercooling, and $0.4^{\circ}C$/min cooling rate. Maximum expitaxial layer overgrowth (ELO) of 110-160$\mu \textrm{m}$ was obtained when the seed was aligned along (112) orientation. Initial melt-back of the substrate was observed but limited to the seed region so that flat In-Ga-As-P layers were grpwn throughout the GaAs substrates. The InP/GaAs heteroepitaxial structure could be obtained by growing an additional InP layer on top of the In-Ga-As-P layer.