The Development of Fertical type LPE System for Single Crystal Growth

단결정 성장을 위한 수직형 LPE 장치의 제작

In this study, the vertical type LPE system has been developed by fully hand-made. The temperature fluctuation and minimum cooling rate of this LPE system are within $\pm$0.05$^{\circ}C$ and 0.15$^{\circ}C$/min, respectively. It is considered that these properties are enough to grow III-V semiconductor compounds single crystals by liquid phase epitaxy method. Futhermore in this study. 1.3${\mu}{\textrm}{m}$ GaInAsP/InP single crystal growing has been carried out by this system. It has been obtained that the growing rate was about 0.72${\mu}{\textrm}{m}$/min for InP binary layer and 0.36${\mu}{\textrm}{m}$/min for GaInAsP quarternary layer under 0.6$^{\circ}C$/min cooling rate condition.