• 제목/요약/키워드: LN2O

검색결과 161건 처리시간 0.029초

N2O/PE 하이브리드 로켓의 스케일 변화에 따른 연소특성 연구 (Scale Effect on Combustion Characteristics of N2O/PE Hybrid Rocket)

  • 한승주;문근환;김진곤;문희장
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2017년도 제48회 춘계학술대회논문집
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    • pp.797-802
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    • 2017
  • 본 연구에서는 하이브리드 추진기관 설계에 중요한 변수인 스케일에 따른 연소특성을 분석하였다. Blow-down 시스템을 사용하는 $LN_2O$/PE 추진제 조합에 대하여 분석을 수행하였으며 현존하는 스케일 관계식을 이용한 스케일 변화에 따른 평균 후퇴율의 변화는 크지 않음을 확인하였다. 특성배기속도 효율은 스케일이 커짐에 따라 증가함을 확인하였다. 그러나 특성배기속도 효율은 후방연소실의 형상 등 복잡한 변수가 포함되어 있어 단순한 스케일의 변화에 따른 영향이라고 단정할 수 없다고 판단된다. 이에 특성속도효율 및 국부적인 후퇴율 예측에 관한 하이브리드 로켓 스케일 관계식에 관해서는 확정적인 결론을 도출하기 어려울 것으로 판단된다.

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Phase Stability and Electronic Properties of $Bi_2BaLnCuO_{6+δ}$ Cuprates with Structure 2201 Type

  • V. E. Fedorov;N. G. Naumov;P. P. Samoilov;N. F. Zakharchuk;N. I. Matskevich;백우현
    • Bulletin of the Korean Chemical Society
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    • 제16권6호
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    • pp.484-489
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    • 1995
  • The synthesis of new bismuth-barium containing members of layered cuprates with 2201 type structure was reported. By solution calorimetry the formation enthalpies for Bi2MLaCuO6.5 (M=Ba, Ba0.5Sr0.5, Sr) were obtained. Crucial influence of partial oxygen pressure and size of lanthanoid on stability of layered cuprates was shown. Electronic states of variable valence atoms were studied by voltammetry of solids.

졸-겔 코팅에 의한 저온형 고체산화물 연료저지용 전해질막의 합성 및 특성 (Synthesis of Electrolyte Films for Low-Temperature Solid Oxide Fuel Cells by Sol-Gel Coating and Their Characteristics)

  • 현상훈;김승구;장운석
    • 한국세라믹학회지
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    • 제36권4호
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    • pp.391-402
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    • 1999
  • Characteristics of composite electrolytes which were prepared by coating a thin film of YSZ (yttria sta-bilized zirconia : (ZrO2)0.92 (Y2O3)0.08) on YDC (yttria doped ceria : Ce0.8Y0.2O1.9) with mixed conductivity have been investigated in order to develop the low-temperature solid oxide fuel cell. The thickness (t) of spin-coated YSZ thin films after the heat-treatment at 600$^{\circ}C$ was increased proportionally to the sol con-centrations (C) while the decrease in its thickness with the spin rate ($\omega$) could be expressed in the e-quation of ln t=9.49-0.53 ln $\omega$(0.99mol//s sol conc.) When the sol concentration and the spin rate being less than 0.99 mol/l and higher than 1000 rpm respectively reliable YSZ/YDC composite electrolytes could be obtained by multi-coating although several micro-cracks were observed in singly coated YSZ film surfaces. The dense YSZ film with a 1$\mu\textrm{m}$ thickness was prepared by coating of 0.99 mol/l YSZ sol five-times at 2000 rpm followed by heat-treatment at 1400$^{\circ}C$ for 2h, The adhesion between YSZ film and YDC substrate was found to be very good. The open circuit voltages of H2/O2 single cell with YSZ/YDC composite electrolytes were 0.79∼0.82 V at 800$^{\circ}C$ and 0.75∼0.77V at 900$^{\circ}C$ The open circuit voltage was inversely proportioned to the thickness ratio of YSZ thin film (1$\mu\textrm{m}$) to YDC substrate(0.28-2.22 mm)

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Effects of Lanthanides-Substitution on the Ferroelectric Properties of Bismuth Titanate Thin Films Prepared by MOCVD Process

  • Kim, Byong-Ho;Kang, Dong-Kyun
    • 한국세라믹학회지
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    • 제43권11호
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    • pp.688-692
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    • 2006
  • Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.

추력 650 kgf 급 하이브리드 로켓 모터의 연소시험 (Firing Test for Hybrid Rocket Motor with 650 kgf Thrust Level)

  • 이정표;김수종;김기훈;조정태;김학철;우경진;도규성;소정수;오정수;조민경;문희장;성홍계;김진곤
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2009년도 제33회 추계학술대회논문집
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    • pp.503-506
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    • 2009
  • 본 연구에서는 추력 650 kgf 급의 PE/N2O 하이브리드 로켓 모터의 지상 연소시험을 수행하였다. 초기 실험에서 산화제 유량이 작게 유입됨으로 인해 연소실 압력 및 추력이 설계치 만큼 확보되지 못함을 확인 하였다. 이를 보완하기 위해 노즐목 감소 및 산화제 유량을 증대하여 실험을 수행하였고, 실험에서 발생하는 연소현상을 분석하였다. 또한 sub-scale과 lab-scale의 실험결과를 통해 scale에 따른 연소특성 변화를 비교 분석 하였고, 동일 산화제 유속에서 sub-scale의 후퇴율이 lab-scale의 후퇴율보다 차이는 작지만 낮게 나타남을 확인했다. 본 연구의 결과를 통해 실제 하이브리드 사운딩 로켓 개발을 위해 고려되어야 할 사항을 파악할 수 있었다.

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Structural and Magnetic Studies on Electrochemically Lithiated $PrBa_2Cu_3O_y$

  • Choy, Jin-Ho;Chun, Sung-Ho;Kang, Seong-Gu
    • Bulletin of the Korean Chemical Society
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    • 제11권6호
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    • pp.564-567
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    • 1990
  • A lithiated compound $Li_{0.1}Pr^{3+}Ba_2Cu_3O_y$ has been successfully prepared by electrochemical method, which is achieved with a two electrode cell of the type: Metal(Li)/($Li^+\;,\;ClO_4^-$) + propylene carbonate/$PrBa_2Cu_3O_y$. All Pr ions in the lithiated compound are stabilized with a trivalent state as the other rare earths (Ⅲ) substituted in the 90K superconductor lattice ($Y_{1-x}Ln_x^-Ba_2Cu_3O_{7-{\delta}}$). Powder X-ray diffraction analysis shows that both compounds, $PrBa_2Cu_3O_y$ and $Li_{0.1}PrBa_2Cu_3O_y$ are isostructural with the 90 K superconductor, ($YBa_2Cu_3O_{7-{\delta}}$), nevertheless both of them are non-metallic and also non-superconducting down to 10 K. Magnetic susceptibility ${\chi}$ vs. temperature data indicate that Curie contribution from the magnetic ions (Pr and Cu) is weakened on the one hand, but on the other hand temperature-independent part of susceptibility ${\chi}_o$ increases depending upon the rate of lithium intercalation in $PrBa_2Cu_3O_y$ lattice.

산처리한 γ-알루미나의 표면 산량과 표면 전하밀도 (A Study on the Surface Acid Amount and Surface Charge Density of Acid Treated γ-Alumina)

  • 홍영호;이창우;함영민
    • 공업화학
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    • 제9권3호
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    • pp.377-382
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    • 1998
  • 본 연구는 낮은 활성으로 활용성이 제한된 ${\gamma$-알루미나의 이용을 높이기 위하여 표면을 처리한 알루미나의 계면전기적 특성과 표면활성간의 상관성을 규명하기 위하여 수행되었다. 질산알루미늄을 출발 물질로 하고 암모니아수를 침전제로 사용하여 제조한 알루미나와 황산, 질산, 염산으로 표면 처리한 알루미나를 질량이동법과 site-binding theory를 이용하여 영점전하점을 측정하였다. Amine Titration법과 Hammett 지시약법으로 표면활성점을 구하였다. 전해질에 분산된 알루미나의 계면특성은 전위차적정방법에 의하여 측정된 표면 전하밀도값을 이용하여 분석하였다. 표면전하밀도와 산량의 결과를 이용하여 얻은 ${\gamma$-알루미나의 표면특성과 계면전기적 특성의 상관성은 다음과 같다. 표면을 처리하지 않은 알루미나는 $H_o{\leq}+9.3$인 조건에서 소성온도가 증가함에 따라 산도는 감소한다. 표면처리한 알루미나는 표면을 처리하는 데 사용한 음이온의 농도가 증가하면 표면 이온화상수와 영점전하점은 감소한다. 표면을 처리한 알루미나의 표면전하밀도와 산량은 $H_o{\leq}+4.8$인 조건에서 다음과 같은 상관관계를 갖는다. $SO_4^2-/Al_2O_3:Q_A=-0.172ln(0.0418{\sigma}+1.448)$ $NO_3^-/Al_2O_3:Q_A=-0.024{\sigma}-0.0189$ $Cl^-/Al_2O_3:Q_A=-0.01{\sigma}-0.2006$.

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BaO-Pr$_2$O$_3$-TiO$_2$계 및 BaO-(Nd,Pr)$_2$O$_3$-TiO$_2$계 마이크로파 유전체의 합성 및 특성에 관한 연구 (A Study of the Synthesis and the Properties on Microwave Dielectric Material of BaO-Pr$_2$O$_3$-TiO$_2$ and BaO-(Nd,Pr)$_2$O$_3$-TiO$_2$ System)

  • 이용석;이재원;성학제;김준수;이병하
    • 한국세라믹학회지
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    • 제35권8호
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    • pp.775-782
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    • 1998
  • This experiment is third study concerning BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} (Ln=Sm, Nd, Pr, La..) system which is known to show a high dielectric constant and Q value in microwave dielectric materials. The process of cry-stallization and the microwave dielectric properties of the specimens sintered at 1220-140$0^{\circ}C$ for 2 hr was investigated in the BaO-(Na,{{{{ { { Pr})_{2 }O }_{3 } }}-{{{{ { TiO}_{2 } }} as well as BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} system. The single phase BaPr2Ti5O14 and Ba(Nd,{{{{ { { Pr})_{2 }O }_{3 } }}Ti5O14 was finally formed from the Pr2Ti2O7 (Nd, Pr)2Ti2O7 as a secondary phase in the BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} and BaO-(Nd, {{{{ { { Pr})_{2 }O }_{3 } }}-{{{{ { TiO}_{2 } }} system respectively The dielectric constant of the specimens sint-ered at 1280~131$0^{\circ}C$ showed the maximum value as 105(BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} system) and 88 (BaO-(Nd,{{{{ { { Pr})_{2 }O }_{3 } }}-{{{{ { TiO}_{2 } }} system) and the Q values of them showed higher value than 1800 which are due to the maximum den-sity. However the dielectric properties of the specimens sintered at higher temperature than 131$0^{\circ}C$ were reduced due to the increases of pore which were resulted from the sudden grain growth.

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MOS구조에서의 원자층 증착 방법에 의한 $Ta_2O_{5}$ 박막의 전기적 특성에 관한 연구 (A Study on the Electrical Properties of $Ta_2O_{5}$ Thin Films by Atomic Layer Deposition Method in MOS Structure)

  • 이형석;장진민;임장권;하만효;김양수;송정면;문병무
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제52권4호
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    • pp.159-163
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    • 2003
  • ln this work, we studied electrical characteristics and leakage current mechanism of $Ta_2O_{5}$ MOS(Metal-Oxide-Semiconductor) devices. $Ta_2O_{5}$ thin film (63 nm) was deposited by ALD(Atomic Layer Deposition) method at temperature of 235 $^{\circ}C$. The structures of the $Ta_2O_{5}$ thin films were examined by XRD(X-Ray Diffraction). From XRD, it is found that the structure of $Ta_2O_{5}$ is single phase and orthorhombic. From capacitance-voltage (C-V) anaysis, the dielectric constant was 19.4. The temperature dependence of current density-electric field (J-E) characteristics of $Ta_2O_{5}$ thin film was studied at temperature range of 300 - 423 K. In ohmic region (<0.5 MV/cm), the resistivity was 2.456${\times}10^{14}$ ($\omega{\cdot}cm$ at 348 K. The Schottky emission is dominant at lower temperature range from 300 to 323 K and Poole-Frenkel emission is dominant at higher temperature range from 348 to 423 K.