• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.283-285
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• 2001

In this paper, a new lateral insulated gate bipolar transistor (LIGBT) is proposed to improve the latch-up performance without current path underneath the n+ cathode region. The improvement of latch-up performance is verified using the two-dimensional simulator MEDICI and the simulation results on the latch-up current density are 3.12${\times}$10$\^$-4/ A/$\mu\textrm{m}$ for the proposed LIGBT and 0.94${\times}$10$\^$-4/ A/$\mu\textrm{m}$ for the conventional LIGBT. The proposed SOI LIGBT exhibits 3 times larger latch-up capability than the conventional SOI LIGBT.

• Transactions on Electrical and Electronic Materials
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• v.2 no.4
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• pp.30-32
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• 2001

In this paper, a new silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) is proposed to improve the latch-up performance without current path underneath the n$^{+}$ cathode region. The improvement of latch-up performance is verified using the two- dimensional simulator MEDICI and the simulation results on the latch-up current density are 4468 A/cm2 for the proposed LIGBT and 1343 A/$\textrm{cm}^2$ for the conventional LIGBT. The proposed SOI LIGBT exhibits 3 times larger latch-up capability than the conventional SOI LIGBT.T.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.3
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• pp.161-166
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• 1999

We investigate the device characteristics of the separated shorted-anode LIGBT (SSA-LIGBT), which suppresses effectively the negative differential resistance regime, by 2-dimensional numerical simulation. The SSA-LIGBT increases the pinch resistance by employing the highly resistive n-drift region as an electron conduction path instead of the lowly resistive n buffer region of the conventional SA-LIGBT. The negative differential resistance regime of the SSA-LIGBT is significantly suppressed as compared with that of the conventional SA-LIGBT. The SSA-LIGBT shows the lower forward voltage drop than that of the conventional SA-LIGBT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.371-375
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• 2000

In this paper a new conductivity modulated power transistor called the Lateral Insulated Gated Bipolar Transistor which included n+ ring and p-channel gate is presented. A new lateral IGBT structure is proposed to suppress latch-up and to improve turn off time by imploying n+ ring and p-channel gate and verified by MEDICI. The simulated I-V characteristics at $V_{G}$=15V show that the latch up occurs at $V_{A}$=18V and 6.9$\times$10$^{-5}$ A/${\mu}{\textrm}{m}$ for the proposed LIGBT while the conventional LIGBT latches at $V_{A}$=1.3V and 1.96${\mu}{\textrm}{m}$10$^{-5A}$${\mu}{\textrm}{m}$. It is shown that turn off characteristic of new LIGBT is 8 times than that of conventional LIGBT. And noble LIGBT is not n+ buffer layer because that It includes p channel gate and n+ ring. Therefore Mask for the buffer layer isn’t needed. The concentration of n+ ring is and the numbers of n+ ring and p channel gate are three for the optimal design.n.n.n.n.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.113-115
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• 2000

The gradual hole injection LIGBT (GI-LIGBT) which employs the dual gate and the p+ injector, was fabricated for eliminating a negative resistance regime and reducing a forward voltage drop in SA-LIGBT. The elimination of the negative resistance regime is successfully achieved by initiating the hole injection gradually. Furthermore, the experimental results show that the forward voltage drop of GI-LIGBT decreases by lV at the current density of 200 $A/cm^2$, when compared with that of the conventional SA-LIGBT. It is also found that the improvement in the on-state characteristics can be obtained without sacrificing the inherent fast switching characteristics of SA-LIGBT.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.73-77
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• 2000

A dual-gate SOI SA-LIGBT (shorted-anode lateral insulated gate bipolar transistor) which eliminates the snapback effectively is proposed and verified by numerical simulation. The elimination of the snapback in I-V characteristics is obtained by initiating the hole injection at low anode voltage by employing a dual gate and a floating electrode in the proposed device. For the proposed device, the snapback phenomenon is completely eliminate, while snapback of conventional SA-LIGBT occurs at anode voltage of 11 V. Also, the drive signals of two gates have same polarity by employing the floating electrode, thereby requiring no additional power supply.

• Transactions on Electrical and Electronic Materials
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• v.2 no.1
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• pp.32-38
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• 2001

A new small sized Lateral Trench electrode Insulated Gate Bipolar Transistor(LTEIGBT) was proposed to improve the characteristics of conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire electrode of LTEIGBT was replace with trench-type electrode. The LTEIGBT was designed so that the width of device was no more than 19 ㎛. The Latch-up current densities of LIGBT, LTIGBT and the proposed LTEIGBT were 120A/㎠, 540A/㎠, and 1230A/㎠, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ cathode layer underneath n+ cathode layer. The forward blocking voltage of the LTEIGBT is 130V. Conventional LIGBT and LTIGBT of the same size were no more than 60V and 100V, respectively. Because the the proposed device was constructed of trench-type electrodes, the electric field moved toward trench-oxide layer, and punch through breakdown of LTEIGBT is occurred, lately.

• Journal of IKEEE
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• v.23 no.4
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• pp.1309-1313
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• 2019

In this paper, the electrical characteristics of Gate grounded NMOS(GGNMOS), Lateral insulated gate bipolar transistor(LIGBT), Silicon Controlled Rectifier(SCR), and Proposed ESD protection device were compared and analyzed. First, the trigger voltage and holding voltage were verified by simulating the I-V characteristic curve for each device. After that, the robustness was confirmed by HBM 4k simulation for each device. As a result of HBM 4k simulation, the maximum temperature of the proposed ESD protection device is lower than that of GGNMOS and GGLIGBT and SCR, which means that the robustness is improved, which means that the ESD protection device is excellent in terms of reliability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.120-124
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• 2000

In this paper, the effects of trap distribution on switching characteristis of a lateral insulated gate bipolar transistor (LIGBT) are investigated. The simulations are performed in order to to analyze the effect of the positon, width and concentration of trap distribution model with a reduced minority carrier lifetime using 2D device simulator MEDICI. The turn off time for the proposed LIGBT model A with the trap injection is 0.8$mutextrm{s}$. These results indicate the improvement of about 2 times compared with the conventional LIGBT. It is shown that the trap distribution model is very effective to reduce the turn-off time with a little increasing of on-state voltage drop.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.163-166
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• 2003

The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with $SiO_2\;and\;Al_2O_3$ at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with $Al_2O_3$ insulator had good thermal conductivity and reliability