• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.1056-1060
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• 2005

We investigated the fabrication and characteristics of the nitride-based spin-polarized LEDs with room-temperature ferromagnetic (Ga,Mn)N layer as a spin injection source. The (Ga,Mn)N thin films having room-temperature ferromagnetic ordering were found to exhibit the negative MR and anomalous Hall resistance up to room temperature, revealing the existence of spin-polarized electrons in (Ga,Mn)N films at room temperature. The electrical characteristics in the spin LEDs did not degraded in spite of the insertion of the (Ga,Mn)N layer into the LED structure. In EL spectra of the spin LEDs, it is confirmed that the devices produce intense EL emission at 7 K as well as room temperature. These results are expected to open up new opportunities to realize room-temperature operating semiconductor spintronic devices.

• Journal of the Optical Society of Korea
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• 제2권1호
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• pp.13-21
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• 1998

Based on the escape cone concepts, high-brightness light-emitting diodes (LEDs) have been analyzed. In AlGaAs or InGaAlP LEDs, photon absorption in the ohmic region under the electrode is known to be significant. Thus, ins general, a thick window layer (WL) and a transparent substrate (TS) would minimize photon shielding by the electrodes and considerably improve photon output coupling efficiency. However, the schemes do not seem to be necessary in InGaN system. Photon absorption in ohmic contact to a wide bandgap semiconductor such as GaN may be negligible and, as a result, the significant photon shielding by the electrodes will not degrade the photon output coupling efficiency so much. The photon output coupling efficiency estimated in InGaN LEDs is about 2.5 - 2.8 times that of the conventional high-brightness LED structures based on both WL and TS schemes. As a result, the extenal quantum efficiency in InGaN LEDs is as high as 9% despite the presumably very low internal quantum efficiency.

• Current Optics and Photonics
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• 제4권3호
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• pp.247-252
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• 2020

Important determinants for selecting outdoor lighting are the color-rendering index (CRI) and scotopic-to-photopic (S/P) ratio of the lighting units. The higher the S/P ratio, the better energy savings and visual performance. In this study, CCT-tunable LED lighting units were optimized and fabricated by spectral combination of red, green, blue, and yellow LEDs. The measured results for RGB LEDs provided S/P ratios of 1.55~2.58 and those of RGBY LEDs gave 1.46~2.46 to the correlated color temperatures (CCTs) ranging from 2700 K to 6500 K, with CRI values of over 80 at the same time.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.575-576
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• 2006

It was analyzed qualitatively the light extraction in GaN-on-sapphire LEDs based on a simple model. The light extraction efficiency in the LEDs is simulated numerically by using ray tracing method. In the present study, the extraction efficiency was simulated on three different types of LEDs, which a have a different pattered sapphire substrate. And, the role of the patterned sapphire substrate are analyzed and discussed. Based on the analysis, the improvements of extraction efficiency in the LED structures were discussed and these analyses are helpful in the design of high brightness GaN LEDs.

• Transactions on Electrical and Electronic Materials
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• 제9권3호
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• pp.116-119
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• 2008

The purpose of this study is to develop the Photodynamic Therapy Equipment for medical treatment. We developed the equipment which was helpful in palpating wound healing by using 525 nm LEDs. The equipment was assembled with a micro-controller and green color LEDs, and designed to enable us to control light irradiation time, intensity and so on. In this study, the designed device was used to find out how 525 nm LEDs light affected the skin wound of SD-Rat(Sprague-Dawley Rat). We divided the participants into two groups; irradiation group which was irradiated one hour a day for 9 consecutive days, and none irradiation group. The results showed that the study group had lower incidence of inflammation and faster recovery, compared with the control group.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 B
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• pp.1342-1344
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• 2000

This paper presents a microcontroller-based control circuit for color variation of high brightness RGB LEDs in $8{\times}8$ matrix array. The control circuit is comprised of an AT89C52 chip, D Flip-flops, and transistors for switching, and is used to adjust the number of LEDs operated for color variation. For a stable operation, it is required that the input current to each LED should be maintained to a normal value irrespective of the number of LEDs operated.

• 한국전기전자재료학회논문지
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• 제27권3호
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• pp.151-155
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• 2014

We have developed quantum dot light emitting diodes (QD-LEDs) using a InP/ZnSe/ZnS multi-shell QD emission layer. The hybrid structure of organic hole transport layer/QD/organic electron transport layer was used for fabricating QD-LEDs. Poly(4-butylphenyl-diphenyl-amine) (poly-TPD) and tris[2,4,6-trimethyl-3-(pyridin-3-yl)phenyl]borane (3TPYMB) molecules were used as hole-transporting and electron-transporting layers, respectively. The emission, current efficiency, and driving characteristics of QD-LEDs with 50, 65 nm thick 3TPYMB layers were investigated. The QD-LED with a 50 nm thick 3TPYMB layer exhibited a maximum current efficiency of 1.3 cd/A.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2007년도 하계학술대회 논문집
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• pp.244-246
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• 2007

The LCD backlight technique using light-emitting diode(LED) has been studied in the recent backlight market. The white light is need for LCD backlight and it is generally implemented by combining the RGB-LEDs to obtain the high brightness. However, RGB-LEDs have different color characteristics for the current and temperature variations, which results in the color shift problem. The color shift characteristics of RGB-LEDs for the current and temperature variations are investigated in this paper. This result can be used to control the color of backlight system using RGB-LEDs.

• Journal of the Optical Society of Korea
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• 제18권3호
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• pp.283-287
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• 2014

Square lattice nano-hole arrays with diameters and periodicities of 200 and 500 nm, respectively, are fabricated on InGaN/GaN blue light emitting diodes (LEDs) using electron-beam lithography and inductively coupled plasma reactive ion etching processes. Cathodoluminescence (CL) investigations show that light emission intensity from the LEDs with the nano-hole arrays is enhanced compared to that from the planar sample. The CL intensity enhancement factor decreases when the nano-holes penetrate into the multiple quantum wells (MQWs) due to the plasma-induced damage and the residues. Wet chemical treatment using KOH solution is found to be an effective method for light extraction from the nano-patterned LEDs, especially, when the nano-holes penetrate into the MQWs. About 4-fold CL intensity enhancement factor is achieved by the KOH treatments after the dry etching for the sample with a 250-nm deep nano-hole array.

• 한국전기전자재료학회논문지
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• 제34권4호
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• pp.221-228
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• 2021

With the advent of the IoT (internet of things) era, there has been discussion on how to efficiently use various information from daily life. In academic and industrial society, various smart devices such as smart watches, smart phones, and smart glasses have been developed and commercialized for narrowing the physical/psychological distance with user information. According to recent developments of smart devices, the contemporary people have desired to check their body information and treat disease by themselves. According to the needs of the time, biological researches by phototherapy/monitoring have been actively conducted. Among various light sources, microLEDs have been spotlighted due to their superior optoelectric properties and stability. In this paper, we would like to review the state-of-the research results on the next-generation biological therapy devices via microLEDs.