• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.9
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• pp.64-71
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• 1997

A new etching technique of meltback was investigated for GaAs lensed optical devices with selective windows opending in the LPE (liquid phase epitaxy) system. In the meltback process, the etch depth and the etch shape were controlled by the degree of under-saturation, etch time and other parameters. A GaAs/AlGaAs DH layer was grown on the selectively etched hemispherical well for optical device application such as lensed surface emitting LED. The regrowth process were related with the coolin grate and the well to well spacing. A novel surface emitting LED with hemispherical AlGaAs lens was fabricated using the meltbakc and regrowth as the key process for AlaAs lens array. The light emitting efficiency of the LED was upto three times higher than the similar structure LED without lens. The meltback and regrowth technique was applicable to manufacture the optical device in LPE.

• Journal of Information Display
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• v.13 no.1
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• pp.37-42
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• 2012

An empirical functional form was suggested for the analysis of the emission spectrum of high-power light-emitting diode (LED) consisting of a sharp blue peak from the LED chips and a broad yellow peak from the phosphor layer. The peak positions, half widths, shape parameters, and amplitudes of these two peaks were reliably obtained as a function of the temperature, and the results were discussed qualitatively in relation with the junction temperature. The adoption of an inert liquid was found to have significantly reduced the LED temperature and the color shift of the emitted light. The phenomenological approach used in this study may be helpful in the simulation of the LED spectrum under various thermal conditions, and may thus be helpful in the improvement of the device performance.

• Journal of the Optical Society of Korea
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• v.16 no.4
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• pp.349-353
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• 2012

Uniform spreading of injection current in light-emitting diodes (LEDs) is one of the crucial requirements for better device performances. It is reported that non-uniform current spreading leads to low output power, high current crowding, heating, and reliability degradation of the LED device. This paper reports on the effects of different surface and electrode geometries in the LEDs. To increase the output power of LEDs and reduce the series resistance, a rectangular-type LED (RT-LED) with a centered island cathode has been fabricated and investigated by comparison with a conventional LED (CV-LED). The performances of RT-LEDs were prominently enhanced via uniform current spreading and low current crowding. Performances in terms of increased output power and lower forward voltage of simulated RT-LEDs are much superior to those of CV-LEDs. Based on these results, we investigated the correlation between device geometries and optical characteristics through the fabricated CV and RT-LEDs. The measured output power and forward voltage of the RT-LEDs at 100 mA are 64.7% higher and 8% smaller compared with those of the CV-LEDs.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1358-1360
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• 1998

In this paper, organic thin film LED(light emitting diode) having ITO glass/$Alq_3$/Al structure using an $Alq_3$ was fabricated by the vacuum evaporation and the absorbance, wave length, 1-V characteristics were investigated. Electroluminescence of green and wavelength of 510[nm] were observed in this device. We observed absorbance form 320[nm] to 430[nm] and knew unstability of $Alq_3$ material as light emitting device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.439-442
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• 1998

In this paper, organic thin film LED(light emitting diode) having ITO glass/Alq$_3$/Al structure using an Alq$_3$ was fabricated by the vacuum evaporation and the absorbance, wave length, I-V characteristics were investigated, Electroluminescence of green and wavelength of 510[nm] were observed in this device. We observed absorbance form 320[nm] to 430[nm] and knew unstability of Alq$_3$ material as light emitting device.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.7
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• pp.1-8
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• 2012

In this paper, we improved the light extraction efficiency by structural change of LEDs on conventional LEDs. We simulated the LEDs light emission as functions of LED side wall angle, various refractive indices the geometrical structures and analyzed the condition improved the light efficiency. We present the results of experimerns and simulations for light output power from LEDs for various refractive indices and the geometrical structures of the LED encapsulants. When the side wall angle range was from 40[$^{\circ}$] to 30[$^{\circ}$], the LED emission increased. LED side wall angle onto LED using the simulation system with a fine tuning of the structure of the LEDs side wall angle is fabricated. Additionally, we changed the side wall angle of LED package with spherical structure and flat structure. The result of spherical structure ray tracting is higher compared with flat structure about 14[%].

• Journal of the Korean Society for Precision Engineering
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• v.30 no.3
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• pp.340-348
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• 2013

In Projection Stereolithography Apparatus (PSLA), Digital Micromirror Device (DMD) and Liquid Crystal Display (LCD) are used as a beam pattern generator. The DMD shows high resolution, but it is mostly applied in micro stereolithography due to high cost and fabricable area. In LCD, the size of pattern beam is freely controlled due to various panel sizes. The LCD, however, has some limitations such as short life time by the high power light source, non-uniform light intensity of pattern beam and low transmittance of UV-light. To solve these problems in LCD-based PSLA, a Scanbeam-SLA with LCD of 19 inches and visible LED-array is developed. In this system, the light module works like a scanner for uniform illumination. The system configuration, working principle and fabrication examples are addressed in this study.

• Journal of information and communication convergence engineering
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• v.13 no.1
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• pp.50-55
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• 2015

We report design and simulation of a two-dimensional (2D) silicon-based nanophotonic crystal as an optical insulator to enhance the light emission efficiency of light-emitting diodes (LEDs). The device was designed in a manner that a triangular array silicon photonic crystal light insulator has a square trench in the middle where LED can be placed. By varying the normalized radius in the range of 0.3-0.5 using plane wave expansion method (PWEM), we found that the normalized radius of 0.45 creates a large band gap for transverse electric (TE) polarization. Subsequently a series of light propagation simulation were carried out using 2D and three-dimensional (3D) finite-difference time-domain (FDTD). The designed silicon-based light insulator device shows optical characteristics of a region in which light propagation was forbidden in the horizontal plane for TE light with most of the visible light spectrum in the wavelength range of 450 nm to 600 nm.

• Journal of the Korean Ceramic Society
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• v.54 no.6
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• pp.449-469
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• 2017

The development of quantum dots (QDs) has had a significant impact on various applications, such as solar cells, field-effect transistors, and light-emitting diodes (LEDs). Through successful engineering of the core/shell heterostructure of QDs, their photoluminescence (PL) quantum yield (QY) and stability have been dramatically enhanced. Such high-quality QDs have been regarded as key fluorescent materials in realizing next-generation display devices. Particularly, electrically driven (or electroluminescent, EL) QD light-emitting diodes (QLED) have been highlighted as an alternative to organic light-emitting diodes (OLED), mostly owing to their unbeatably high color purity. Structural optimizations in QD material as well as QLED architecture have led to substantial improvements of device performance, especially during the past decade. In this review article, we discuss QDs with various semiconductor compositions and describe the mechanisms behind the operation of QDs and QLEDs and the primary strategies for improving their PL and EL performances.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.108-111
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• 2001

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique for light emitting device applications. We have controlled the emission intensity of UV and visible light, depending on film thickness and various post-annealing time. UV emission became strong as the thickness of ZnO thin films increased. The intensity of visible light was strong as post-annealing temperature increased. The optical properties of the ZnO thin films were characterized by PL(photoluminescence) and the structural properties of the ZnO were characterized by XRD for the application of ZnO light emission device.