• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.201-205
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• 2015

This paper dealt with the condensing technology of an LED light source that uses a parabolic reflector to replace a searchlight equipped with a xenon lamp. A ray-tracing simulation was conducted to analyze the influence of the diameter of the reflector and the size of the light source on light condensing. The combination of a parabolic reflector with a diameter of 620 mm and a focal distance of 220 mm, and a 9 mm multi-chip package (MCP) with a luminous flux of 7,000 lm showed the narrowest beam angle. The luminous intensity at the center was measured at 7.7×10⁶ cd. The distance between the light source and the point where the illuminance was 1 lx was calculated to be 2.8 km. The power consumption of the system was 95 W, which is only 9.5% of that of the 1 kW xenon searchlight, and the beam angle was 1.03°. In a site experiment, it was confirmed that the light ray reflected from the LED searchlight proceeds forward without any diffusion because of the narrow beam angle.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.10
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• pp.849-856
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• 2012

Chip on board type white light emitting diode on metal core printed circuit board with high thixotropy silicone is fabricated by vacuum printing encapsulation system. Encapsulant is chosen by taking into account experimental results from differential scanning calorimeter, shearing strength, and optical transmittance. We have observed that radiant flux and package efficacy are increased from 336 mW to 450 mW and from 11.9 lm/W to 36.2 lm/W as single dome diameter is varied from 2.2 mm to 2.8 mm, respectively. Double encapsulation structure with 2.8 mm of dome diameter shows further significant enhancement of radiant flux and package efficacy to 667 mW and 52.4 lm/W, which are 417 mW and 34.8 lm/W at single encapsulation structure, respectively.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.2
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• pp.10-18
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• 2011

In order to develop highly-integrated RGBY(Red, Green, Blue, Yellow) LED light, a high thermal radiation ceramic package was manufactured, and the encapsulation process was applied with a vacuum printing encapsulation system(VPES). After the completion of vacuum printing, the shape of the encapsulation layer could be controlled by heat treatment during the curing process, and the optical power became highly increased as the encapsulation layer approached a dome shape. The optical characteristics involved in a Correlated Color Temperature(CCT), a Color Rendering Index (CRI), and the efficiency of RGBY LED light were able to be identified by the experimental designing method. Regarding the characteristics of the white light of RGBY LED light, which were measured on the basis of the aforementioned optical characteristics, CRI posted 88, CCT recorded 5,720[$^{\circ}K$], and efficiency exhibited 52[lm/W]. The chip temperature of RGBY LEDs was below 55[$^{\circ}C$] when the consumption power of LED chips was 0.1[W] for the red, 0.3[W] for the green, 0.08[W] for the blue, and 0.24[W] for the yellow. Also, the thermal resistance of the highly-integrated RGBY LED light measured by T3Ster was 2.3[K/W].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.8
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• pp.614-619
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• 2013

Recently, remote phosphor is reported for white LED enhancing of phosphor efficiency compared with conventional phosphor-based W-LED. In this study, Remote phosphor was produced by screen printing coating on glass substrate with phosphor contents rated paste and heat treatment. The paste consists of phosphor, lowest softening glass frit and organic binders. Remote phosphor can be well controlled by varying the phosphor content rated paste. After mounting remote phosphor on top of blue LED chip, CCT, CRI, and luminance efficiency were measured. The measurement results showed that CCT, CRI, and luminance efficiency were 6,645, 68, and 1,16l m/W in phosphor 80 wt.% remote phosphor sintered at $600^{\circ}C$.

• Korean Journal of Optics and Photonics
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• v.25 no.4
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• pp.221-224
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• 2014

We present a method for manufacturing a TIM used for packaging a high-power LED. In this method a mixture of diamond powder and hydrogen peroxide is used as a filler epoxy. The thermal resistance of the TIM with hydrogen peroxide was improved by about 30% over the thermal resistance of the TIM without hydrogen peroxide. We demonstrate that as a result the heat generated from the chip is easily dissipated through the TIM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.303-304
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• 2005

In this paper, we report a fluxless eutectic die bonding process which uses 80Au-20Sn eutectic alloy. The chip LEDs are picked and placed on silicon substrate wafers. The bonding process temperatures and force are $305\sim345^{\circ}C$ and 10$\sim$100gf, respectively. The bonding process was performed on graphite heater with nitrogen atmosphere. The quality of bonding are evaluated by shear test and thermal resistance. Results of fluxless eutectic die bonding show that shear strength is Max. 3.85kgf at 345$^{\circ}C$ /100gf and thermal resistance of junction to die bonding is Min. 3.09K/W at 325$^{\circ}C$/100gf.

• Journal of Information Management
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• v.42 no.3
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• pp.1-26
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• 2011

The domain of LED is analyzed for describing the current status of Korea's R&D in the domain comparing with those of others quantitatively. Fourteen sub-domains of LED manufacturing technology are selected and the time span for analysis is ten-year: 2001-2010. Bibiliometric analysis is performed by the unit of publication, core researcher, institution and country. Strategical diagram is also produced with devised two indicators: NGI and NPI. As a result, Korea is competitive in the area of Chip Scale Package, but R&D supports in another promising areas, such as large-caliber sapphire wafer, are necessary. It is also revealed that research activities are expanded dominantly in academia, but practical technologies are developed in industrial circle. It is suggested that to support core corporate and to encourage industrial-academic collaboration is essential for systematical technology development and high achievement in prominent areas.

• Journal of the Korean Ceramic Society
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• v.52 no.4
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• pp.229-233
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• 2015

Currently, the majority of commercial white LEDs are phosphor converted LEDs made of a blue-emitting chip and YAG yellow phosphor dispersed in organic silicone. However, silicone in high-power devices results in long-term performance problems such as reacting with water, color transition, and shrinkage by heat. Additionally, yellow phosphor is not applicable to warm white LEDs that require a low CCT and high CRI. To solve these problems, mixing of green phosphor, red phosphor and glass, which are stable in high temperatures, is common a production method for high-power warm white LEDs. In this study, we fabricated conversion lenses with LUAG green phosphor, SCASN red phosphor and low-softening point glass for high-power warm white LEDs. Conversion lenses can be well controlled through the phosphor content and heat treatment temperature. Therefore, when the green phosphor content was increased, the CRI and luminance efficiency gradually intensified. Moreover, using high heat treatment temperatures, the fabricated conversion lenses had a high CRI and low luminance efficiency. Thus, the fabricated conversion lenses with green and red phosphor below 90 wt% and 10 wt% with a sintering temperature of $500^{\circ}C$ had the best optical properties. The measured values for the CCT, CRI and luminance efficiency were 3200 K, 80, and 85 lm/w.

• Korean Journal of Materials Research
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• v.29 no.7
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• pp.437-442
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• 2019

Green $BaSi_2O_2N_2:0.02Eu^{2+}$ phosphor is synthesized through a two-step solid state reaction method. The first firing is for crystallization, and the second firing is for reduction of $Eu^{3+}$ into $Eu^{2+}$ and growth of crystal grains. By thermal analysis, the three-time endothermic reaction is confirmed: pyrolysis reaction of $BaCO_3$ at $900^{\circ}C$ and phase transitions at $1,300^{\circ}C$ and $1,400^{\circ}C$. By structural analysis, it is confirmed that single phase [$BaSi_2O_2N_2$] is obtained with Cmcm space group of orthorhombic structure. After the first firing the morphology is rod-like type and, after the second firing, the morphology becomes round. Our phosphor shows a green emission with a peak position of 495 nm and a peak width of 32 nm due to the $4f^65d^1{\rightarrow}4f^7$ transition of $Eu^{2+}$ ion. An LED package (chip size $5.6{\times}3.0mm$) is fabricated with a mixture of our green $BaSi_2O_2N_2$, and yellow $Y_3Al_5O_{12}$ and red $Sr_2Si_5N_8$ phosphors. The color rendering index (90) is higher than that of the mixture without our green phosphor (82), which indicates that this is an excellent green candidate for white LEDs with a deluxe color rendering index.

• Journal of the Korean Ceramic Society
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• v.44 no.3 s.298
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• pp.147-151
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• 2007

An improvement for the efficiency of the $Sr_{2}SiO_{4}:Eu$ yellow phosphor under the $450{\sim}470\;nm$ excitation range have been achieved by adding the co-doping element ($Mg^{2+}\;and\;Ba^{2+}$) in the host. White LEDs were fabricated through an integration of an blue (InGaN) chip (${\lambda}_{cm}=450\;nm$) and a blend of two phosphors ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) in a single package. The InGaN-based two phosphor blends ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) LEDs showed three bands at 450 nm, 550 nm and 640 nm, respectively. The 450 nm emission band was due to a radiative recombination from an InGaN active layer. This 450 nm emission was used as an optical transition of the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor. As a consequence of a preparation of white LEDs using the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor yellow phosphor and CaS:Eu red phosphor, the highest luminescence efficiency was obtained at the 0.03 mol $Ba^{2+}$ concentration. At this time, the white LEDs showed the CCT (5300 K), CRI (89.9) and luminous efficacy (17.34 lm/W).